摘要
采用自制的连续定向凝固装置,借助SEM和TEM考察了在较大生长速度范围内,(R=30～2500μm/s)Al-Si共晶的生长过程,着重考察了Sb变质元素的影响。发现加Sb变质后较未加变质剂时,硅相的微观结构特征没有明显变化,但更倾向于等温生长。其生长方式与未变质时相同。
In this paper,it has been investigated that the growth process of Al—si eutectic,the movphology and microstrutute of silion at different growth rates (R=30～2500μm/s)with the help of self—made continuous directional solidication equipment SEM and TEM,especailly the effect of modification elements Sb and the A1—Si eutectic growth mechanism have been studied. It is found that the microstruture characteristics of euteetie silion with Sb modification is similar to that of eutectic silicon with no modification. The growth behavior and mechanism of eutectic silicon with Sb modification is similar to that of eutectic silicon with no modification
出处
《铸造技术》
CAS
北大核心
1993年第5期46-48,共3页
Foundry Technology
关键词
铝硅合金
锑
孕育剂
A1—Si alloy Sb modification
