摘要
本文用SiH_4等离子放电对聚酰亚胺薄膜掺硅,显著提高了光电导性.对掺杂后的薄膜的结构和光电导特征做了x 射线光电子能谱、光吸收谱和光电流谱分析.首次采用光刺激电流法(PSC)分析了聚酰亚胺及其掺硅薄膜的陷阱能级、分布和密度等参数,为分析光电导机理提供了可靠依据.
A novel technique for the incorporation of foreign elements into polyimi-de(PI) film by glow discharge(plasma)of silicane is studied.The photoconductivityof PI implanted with Si is much higher than before.The effect of incorporat_ing Si on its structure and photoelectrical response characteristics is appraisedwith x-ray photoelectron spectroscopy,light absorption spectra and photocurr-ent spectra.The photon stimulated current(PSC)method was used toobtain the trapping parameters,such as the energy level,distribution andconcentration of PI and its Si incorporated films,with these results,areasonabe photoelectrical conduction mechanism is described.
出处
《上海交通大学学报》
EI
CAS
CSCD
北大核心
1989年第5期91-96,共6页
Journal of Shanghai Jiaotong University
关键词
聚酰亚胺
光电导
等离子掺杂
plasma incorpoation
polyimide
photon stimulated current method
photoconduction
energy band structure
