摘要
本文提出采用金属有机化合物气相沉积(MOCVD)技术,用(CH_3)_4Sn(简称 TMT)为锡源,氧和氩的混合气体为载气,PH_3为掺杂源,研究了掺磷 SnO_2多晶膜的制备和性质。给出了制备掺杂 SnO_2多晶膜(1500—3000(?))的最佳条件。通过扫描电镜、X 射线衍射、电子衍射及紫外可见吸收谱的观察测定指出,在最佳条件下成膜,膜层均匀致密,为多晶结构。其 X 射线衍射图中(110)衍射线最强,且有低氧化物 SnO 及 Sn_3O_4的存在。当 PH_3/TMT 摩尔比为0.01时,膜层电阻值最小(方块电阻为30—50Ω/□),其可见光透过率仍可达95%。随PH_3/TMT 摩尔比增加,膜电层电阻值上升,当摩尔增加到0.25时,膜层将由多晶转变为非晶结构。
The growth of P-doped SnO_2 films by MOCVD technique hasbeen studied by using tetramethyhin(CH_3)_4Sn(TMT)as the tin source,anoxygen-argon mixture as the carrier gas and phosphine(PH_3)as the dopantsource.Optimal deposition conditions,some property measurements andcharacterizations of these films are reported,The films are of polycrystallinestructure and are characterized by the strongest(110)line in the X-raydiffraction patterns,which indicates the presence of the lower oxides of tin,i.e.SnO and Sn_3O_4,When the mole fraction PH_3/TMT is equal to 0.01,thedoped film shows a minimum sheet resistance value and a light transmissionup to 95% in the visible region.In addition a rapid transition of the filmfrom polycrystalline state to amorphous state occurs when the mole fractionPH_3/TMT exceeds 0.25.
出处
《人工晶体学报》
EI
CAS
CSCD
1989年第2期144-147,共4页
Journal of Synthetic Crystals
