摘要
运用射频磁控溅射法在硅片上制备了立方氮化硼薄膜 ,并对射频功率、气体分压比及衬底偏压等参数对膜中立方氮化硼 (c -BN)含量的影响进行了研究。采用傅立叶红外光谱 (FTIR)、拉曼光谱、X射线光电子能谱 (XPS)和原子力显微镜 (AFM )对c -BN薄膜进行了表征和分析。结果表明 :30 0W的射频功率是制备c -BN薄膜的最佳条件 ;当气体分压比Ar/N2 =5 1时 ,制备的薄膜中c -BN含量相对最高 ;立方氮化硼的形成存在偏压阈值 (约 80V ) ,低于此偏压c -BN很难形成。拉曼光谱分析进一步确认了BN薄膜的晶相结构。AFM和XPS分析结果表明c -BN薄膜结晶良好 ,晶粒尺寸细小 ,具有很好的化学配比 ,B原子与N原子的含量比为 1l。
Cubic boron nitride (c BN) film was prepared on silicon wafer by radio frequency (RF) magnetron sputtering. The effects of RF frequency, gas partial pressure, and substrate bias voltage on the content of c BN in the film were investigated. The resulting c BN film was characterized by means of Fourier transformation infrared spectroscopy, Raman spectroscopy, X ray photoelectron spectroscopy, and atomic force microscopy. It was found that the optimal RF power for the preparation of the c BN film was 300 W. The c BN film prepared at an Ar/N_2 gas partial pressure ratio of 5∶1 had the highest content of c BN. There existed a threshold bias voltage about 80 V for the formation of the c BN film, and the c BN film was hardly formed at a bias voltage below 80 V. Moreover, the prepared c BN film was of good crystallization and had fine grain size, with the ratio of B atom to N atom to be 1∶1, which indicated that the B and N atoms in the c BN film were well stoichiometrically matched.
出处
《材料保护》
CAS
CSCD
北大核心
2005年第1期9-12,共4页
Materials Protection
基金
国家自然科学基金资助项目 (5 99710 6 5 )
关键词
立方氮化硼薄膜
射频磁控溅射
拉曼光谱分析
cubic boron nitride film
radio frequency magnetron sputtering
Raman spectroscopy analysis
