摘要
本文简述了深能级瞬态谱技术测量界面态分布的基本原理。在大量实验基础上给出典型MOS结构界面态分布的测试曲线与数据,对实验结果进行了有价值的分析。
In this paper the essential principle of interface States distribution measured by deep level transient spectroscopy technology is briefly described. Based on a large number of measurementS, the cruves and data measured on interface states distribution of typical MOS Structure are given. The experimental results are significantly analyzed.
出处
《辽宁大学学报（自然科学版）》
CAS
1993年第2期37-43,共7页
Journal of Liaoning University：Natural Sciences Edition
关键词
深能级瞬态谱
界面态
MOS结构
Deep level lransient spectroscopy, Interface states, Transient electric capacity, Capture section.
