摘要
The sensitivity and selectivity to H_2 of a new In_2O_3-based gas sensor were improvedsignificantly by surface chemical modification. A dense layer of SiO_2 near the surface of the porousIn_2O_3 bead was formed by chemical vapor deposition(CVD)of diethoxydimethysilane(DEMS).The dense layer functioned as a molecular sieve, thereby the diffusion of gases with large moleculardiameters,except for H_2, was effectively controlled, resulting in a prominent selectivity and highsensitivity for H_2. The working mechanism of the sensor was also presented.
The sensitivity and selectivity to H_2 of a new In_2O_3-based gas sensor were improvedsignificantly by surface chemical modification. A dense layer of SiO_2 near the surface of the porousIn_2O_3 bead was formed by chemical vapor deposition(CVD)of diethoxydimethysilane(DEMS).The dense layer functioned as a molecular sieve, thereby the diffusion of gases with large moleculardiameters,except for H_2, was effectively controlled, resulting in a prominent selectivity and highsensitivity for H_2. The working mechanism of the sensor was also presented.
