摘要
综合利用RESURF技术、内场限环技术及双层浮空场板技术,充分降低高压LDMOS的表面电场,使用常规低压工艺,最终实现600伏高压LDMOS。本文介绍了此高压LDMOS的设计方法、器件结构、制造工艺和测试结果。
The 600v blocking capability of LDMOS which is suitable for HVIC(High Voltage Integrated Circuit)has been achieved using RESURF(Reduced Surface Field), Internal Field Ring and Floating Field Plate with conventional low-voltage IC technology. The design, structure, process and testing result are described here.
出处
《微电子学与计算机》
CSCD
北大核心
2004年第11期149-152,共4页
Microelectronics & Computer
