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Ⅱ—Ⅵ族半导体材料散射特性的高次有限元分析

HIGH-ORDER FINITE-ELEMENT ANALYSIS FOR SCATTERING CHARACTERISTICS OF Ⅱ-Ⅵ SEMICONDUCTOR MATERIALS
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摘要 用有限元和场匹配相结合的方法分析了Ⅱ-Ⅵ族半导体材料的散射特性。该方法能一次求出纵向模匹配所需要的所有本征模函数,并避开了多模网络方法中求解复超越方程的困难,简化了求解过程。本方法和多模网络方法计算的结果与多个样品的测试值进行了比较,彼此吻合得很好,表明本文方法不仅通用精确,而且具有很高的解题效率。 The scattering characteristics of the Ⅱ-Ⅵ semiconductor were analyzed by a method which combines the second-order finite-element method with the rigorous mode matching procedure. The method avoids the difficulty of solving the complex transcendental equation, and calculates all the eigenvalues and eigenfunctions simultaneously needed for the mode matching treatment in the longitudinal direction. As a result, the whole solution procedure is significantly simplified. A comparison is given between the experimental data and the calculated results obtained with this analysis and the network method, showing very good agreement. The accuracy and efficiency of the present method are thus verified.
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 1993年第3期177-184,共8页 Journal of Infrared and Millimeter Waves
基金 中国国家自然科学基金(NSFC) 德国研究联合会(DFG)联合资助项目~~
关键词 Ⅱ-Ⅵ族 半导体 散射 有限元 Ⅱ-Ⅵ semiconductor, scattering characteristics, high-order finite-element, mode matching method.
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参考文献4

  • 1徐善驾,Int J Infr Millim Waves,1992年,13卷,4期,560页
  • 2徐善驾,IEEE Trans MTT,1989年,37卷,4期,686页
  • 3徐善驾,J Electron,1989年,6卷,1期,50页
  • 4徐善驾,J Electron

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