摘要
报道用光调制反射谱和光致发光方法对非对称的GaAs/Al_(0.3)Ga_(0.7)As耦合双量子阱研究的实验结果。在300K和77K下测量了光调制反射谱,对实验结果的线形拟合确认了在双量子阱中分别对应子能级11H、11L、13H、22H等的跃迁,并与理论计算结果作了比较。以氩离子激光器488nm激发测量了双量子阱中基态(n=1)荧光峰强度随激发光密度的变化,研究了其非线性效应。用632.8nm激光在弱激发下测量了3.8～300K范围内相应荧光峰随温度的变化,对实验结果作了分析讨论。
The study of the experimental results in asymmetric GaAs/Al_(0.3)Ga_(0.7)As double quantum wells (DQW) structure by using photoreflectance (PR) and photoluminescence (PL) techniques is presented. PR spectra were given at 300 K and 77K, respectively. With a least square fit of a line-shape function, the transition above E_0(GaAs) can clearly be identified as confined 11H, 11L, 13H and 22H in the DQW. The comparison of the experimental intersubband energies with an envelope-function calculation was obtained. An argon-ion laser operating at 488 nm was used for a photoexciting source and the PL peak intensities related to 11H transition measured at 4K were obtained and the nonlinear optical effect was discussed. PL peak intensities as a function of temperature for 11H transition, E_(01) and E_(02) were measured by using a 632.8 nm laser of low excited intensity and the results were analyzed.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1993年第2期115-120,共6页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金资助课题
关键词
双量子阱
光致发光
非线性光学
double quantum wells, photoreflectance, photoluminescence, optical nonlinear effect.
