摘要
首次报道了GaAs/Al_(0.35)Ga_(0.65)As/GaAs(50(?)/40(?)/100(?))非对称耦合双阱P-I-N结构的室温光伏谱,清楚地观察到双阱的轻、重空穴激子峰,这些激子峰的能量位置与光荧光和光电流谱得到的数据吻合得很好,而且光伏谱谱形非常类似于光电流谱,呈现清晰的台阶状结构。此外,还观察到轻、重空穴激子跃迁对激发光偏振态的依赖,并讨论了产生光伏谱的机制。
Photovoltaic spectra of a GaAs/Al_(0.35)Ga_(0.65)As/GaAS (50(?)/40(?)/100(?)) asymmetric coupled quantum well P-I-N structure at room temperature are reported for the first time. The photovoltaic spectra clearly show the 'step-like' shape and distinct excitonic peaks from the two quantum wells. The energy positions of these excitonic peaks are in agreement with that of the photocurrent and photoluminescence spectra. In addition, the polarization of the heavy-and light-holes excitonic transitions in the photovoltaic spectra has been observed. The mechanism yielding photovoltaic spectra is discussed in the paper.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1993年第2期89-94,共6页
Journal of Infrared and Millimeter Waves
关键词
光伏谱
量子阱
P-I-N结构
双阱
photovoltaic spectroscopy, quantum well, GaAs/AlGaAs.
