摘要
采用气体放电活化反应蒸发技术(GDARE),以玻璃为衬底,在较低的温度下沉积纳米ZnO薄膜,用二次蒸镀法克服薄膜生长饱和问题、有效增加膜厚及改善薄膜质量。讨论了GDARE法低温下沉积纳米ZnO薄膜的生长过程及成膜机理。由原子力显微镜(AFM)和X-射线衍射谱(XRD)分析薄膜表面形貌和晶体结构,研究结果表明,二次蒸镀法沉积的双层纳米ZnO薄膜具有更好的结晶质量及长期稳定性,薄膜沿c轴高度取向生长,内应力较小,晶粒尺寸均匀,平均粒径约35nm,表面粗糙度降低。
Nanometer ZnO films grown at low temperature were deposited on glass substrates by gas discharge reaction evaporation.By twice deposited the problem of film growing saturation could be solved, the film thickness effectively increased and film quality be improved. The grown mechanism of ZnO films was discussed. Their surface morphology and crystal structure was studied by atomic force microscopy (AFM) and X-ray diffraction (XRD). The results show that double layer nanometer ZnO films have better crystalline quality and stability. The films growth along the c-axis direction have little stress at grain boundary. The crystal grains size about 35 nm of the films is uniform and roughness of surface is lowered.
出处
《华东理工大学学报（自然科学版）》
CAS
CSCD
北大核心
2004年第5期609-612,共4页
Journal of East China University of Science and Technology
关键词
纳米ZNO薄膜
沉积
表面形貌
晶体结构
应力
nanometer ZnO films
deposited
surface morphology
crystal structure
stress
