摘要
为了制备高性能ZnO陶瓷薄膜低压压敏电阻器 ,利用新型Sol Gel方法研究了Cr2 O3 掺杂对ZnO陶瓷薄膜低压压敏性能的影响 .复合先驱体溶液由Bi2 O3 ,Sb2 O3 ,MnO及Cr2 O3 掺杂的ZnO纳米粉体均匀分散于含有Zn(CH3 COO) 2 ,Bi2 O3 ,Sb2 O3 ,MnO及Cr2 O3 的溶胶中制成 .研究结果表明 :利用新型Sol Gel方法制备的ZnO陶瓷薄膜中 ,ZnCr2 O4相在较低的Cr2 O3 添加量时出现 ,当Cr2 O3 的摩尔分数为 0 .75 %时 ,ZnO陶瓷薄膜的非线性系数α为 7,压敏电压为 6V ,漏电流密度为 0 .7μA/mm2 .
In order to get high-performance varistors with low voltage, ZnO-based ceramic film varistors with different Cr_2O_3 doping quantities were fabricated by a Sol-Gel process. The precursor solution prepared by dispersing the ZnO nano-powers throughout into the sol and stabilized by an organic dispersant consisted of Zn(CH_3COO)_2,Bi_2O_3,Sb_2O_3,MnO and Cr_2O_3. The experiment results showed that ZnCr_2O_4 phase could form in lower quantities of Cr_2O_3 by the novel Sol-Gel process. The ZnO-based ceramic films with nonlinearity coefficient of 7, nonlinear voltage of 6?V and the leakage current density of 0.7?μA/mm^2 could be gained when the doping quantities was 0.75?%.
出处
《华中科技大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2004年第10期72-74,77,共4页
Journal of Huazhong University of Science and Technology(Natural Science Edition)
