摘要
采用AlAs氧化物限制工艺实验制备了衬底出光的高功率大出光窗口 (直径为 30 0 μm)InGaAs/GaAs量子阱垂直腔面发射半导体激光器 ,实现了器件室温准连续工作 (脉冲宽度为 5 0 μs ,重复频率为 10 0 0Hz) ,并对器件的伏安特性、光输出特性、发射光谱 ,以及器件的远场发射特性等进行了实验测试 器件阈值电流为 4 6 0mA ,器件的最大光输出功率为 10 0mW ,发射波长为 978.6nm ,光谱半功率全宽度为 1.0nm ,远场发散角小于 10° ,垂直方向的发散角θ⊥ 为 8° ,水平方向的发散角θ∥ 为 9° 。
A bottom-emitting InGaAs/GaAs vertical-cavity surface-emitting laser with large aperture (300 μm) is fabricated by using AlAs oxidation processsing. The device with 300 μm diameter aperture performs at quasi-CW condition (pulse width: 50 μs, repetition rate: 1000 Hz) under room temperature (24℃), and the device has a threshold current of 460 mA, and maximum output power of 100 mW in a single wavelength. The peak wavelength is 978.9 nm, and the full-width at half-maximum (FWHM) is 1.0 nm. The far-field divergence is below 10°, lateral angle θ ∥ and vertical angle θ ⊥ are 9° and 8°, respectively, and the beam is about circularly symmetric.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2004年第9期1029-1031,共3页
Acta Photonica Sinica
基金
中科院长春光机所知识创新项目
国家自然基金资助项目(10 10 4 0 16 ) (6 0 30 6 0 0 4 )
关键词
高功率半导体激光
垂直腔面发射激光器
氧化物限制工艺
量子阱
对称光束
High-power semiconductor laser
Vertical-cavity surface-emitting laser
Oxidation process
Quantum wells
Circularly symmetric beam
