摘要
用射频磁控溅射法在室温Si基片上制备了60.7～1545.0nm范围内不同厚度的MgF2薄膜,并用X射线衍射及激光干涉相移技术对不同厚度MgF2薄膜微结构和应力分布进行了测试分析。结构分析表明:制备的MgF2薄膜呈多晶状态,仍为四方结构;随膜厚由420.0nm增加到1545.0nm,膜的平均晶粒尺寸由3.2nm逐渐增大到14.5nm。应力研究表明:所制备的MgF2薄膜在=30mm选区内全场平均应力均表现为张应力;随膜厚增加,MgF2薄膜中的平均应力值起始时呈近似线性缓慢减小,当膜厚大于1200nm时,其选区平均应力及应力差基本趋于稳定。
MgF2 films with different thickness of 60.7-1545.0 nm were prepared by radio-frequency magnetron sputtering, and the microstructure and stress distribution of the films were measured and analyzed by means of X-ray diffraction and the laser interference phase-shift technique. Microstructure analysis shows that the MgF2 films prepared are in a polycrystalline state with tetragonal structure. The average grain size of the films increases from 3.2 to 14.5 nm as film thickness grows from 420.0 to 1545.0 nm. Analysis on the stress shows that there is a mean stress of the films over a selected area of φ=30 mm. The mean stress decreases linearly with the increase of the film thickness. When film thickness is over 1200 nm, the mean stress and the stress difference within the selected area are tending towards to steady respectively.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2004年第6期700-703,共4页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金(59972001)
安徽省自然科学基金(01044901)
安徽省教育厅科研基金(99JL0024)
安徽大学人才队伍建设基金资助项目。
关键词
氟化镁薄膜
射频磁控溅射
微结构
应力特性
Crystal microstructure
Magnetron sputtering
Optical films
Polycrystals
X ray diffraction analysis
