期刊文献+

半导体激光器光束特性的计算机模拟与实验研究 被引量:1

Computer simulation and experiment research about optical beam characteristics of semiconductor laser
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摘要 为建立一套快速、准确的测量系统以适用于半导体激光器中、大规模生产的测试要求 ,利用有限元差分数值模拟方法对半导体激光器光束的近、远场分布 ,发散角等作理论模拟 ,利用测量系统对其光束的近远场分布、发散角等进行测量。最后提出相应方案处理测量结果以减小误差。与一般测量光束参数的系统相比 ,该测量系统具有兼顾简单快速与准确的优点。 The goal of this article is to present a measuring system which is fast and simple to be applied for the middle or large scale production of semiconductor lasers.The simulation is performed to the near field pattern,far field pattern and divergence angle etc.of the semiconductor laser with the finite difference analysis.A measuring system is built to measure the characteristics.Finally,the experimental system error is analyzed,and an approach to cut down the error is presented.Compared with other methods,this measuring system is simple,fast and precise.
出处 《激光技术》 CAS CSCD 北大核心 2004年第3期298-302,共5页 Laser Technology
基金 国家八六三计划资助项目 (2 0 0 2AA3130 6 0 )
关键词 半导体激光器 光束质量 远场分布 发散角 semiconductor laser optical beam quality far field pattern divergence angle
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参考文献6

  • 1[1]HUANG M F,LEE H Ch,HO J K et al.Laser diode for DVD pickup head [J].Proc SPIE,1998,3419:110~118.
  • 2[2]YANG G W,XU J Y,ZHANG I M et al.Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current [J].J A P,1998,83(1):8~14.
  • 3吕章德,周国泉,王绍民.A lGaInP/GaInP SCH S-SQW激光器光束质量的矢量矩分析[J].光电子.激光,2001,12(6):549-551. 被引量:1
  • 4[5]BIERWIRTH K,SCHULZ N,ARNDT F.Finite-difference analysis of rectangular dielectric waveguide structures [J].IEEE Trans Microwave Theory Technol,1986,34(11):1104~1114.
  • 5[6]KIM C M,RAMASWAMY R V.Modeling of graded-index channel waveguide using non-uniform finite-difference method [J].IEEE J Lightwave Technol,1989,7(10):1581~1589.
  • 6陈军,黄鹏.利用CCD准确测量激光远场发散角[J].强激光与粒子束,1997,9(4):552-556. 被引量:8

二级参考文献8

  • 1陈军.激光二极管列阵泵浦的位相共轭板条YAG激光放大系统[J].光学学报,1996,16(10):1411-1414. 被引量:1
  • 2M Sargent M O Scully 等.激光物理学[M].北京:科学出版社,1982.101-132.
  • 3Zhou G,Opt Commun,2001年,187卷,4/6期,395页
  • 4Sheng Z,Acta Phys Sin(Overseas Edition),1999年,8卷,2期,81页
  • 5Wang S,Opt Laser Technol,1999年,31卷,2期,151页
  • 6Su Y K,IEEE Trans Electron Devices,1998年,45卷,4期,763页
  • 7Wang S,Optik,1995年,101卷,1期,32页
  • 8Sargent M,激光物理学,1982年,101页

共引文献7

同被引文献12

  • 1王术,赵彩霞.带PN结的高维半导体漂流扩散方程组的拟中性极限[J].北京工业大学学报,2005,31(3):328-331. 被引量:1
  • 2陈传军,龙晓瀚.热传导型半导体瞬态问题的特征有限体积方法及分析[J].应用数学学报,2005,28(3):551-562. 被引量:2
  • 3高劭宏,黄德修,高彦锟,杨新民,刘德明,陈俊,胡振华,刘小英.利用传输矩阵法分析取样光栅DBR半导体激光器[J].红外与激光工程,2005,34(4):415-420. 被引量:4
  • 4Moll J L,Ross I M. The dependence of transistor parameters on the distribution of base layer resistivity [J]. Proceedings of IRE, 1956,44 (1) : 72 -78
  • 5Lang R. Lateral transverse mode instability and its stabilization in stripe geometry injection lasers [ J ]. IEEE J Quantum Electron, 1979,15 (8) :718 -726
  • 6Kahen K B. Two - dimensional simulation of laser diodes in the steady state [ J ]. IEEE J Quantum Electron, 1988,24 (4) :641 -651
  • 7Tan G L, Bewtra N, Lee K, et al. A two - dimensional nonisothermal finite element simulation of laser diodes [ J ]. IEEE J Quantum Electron, 1993,29 (3) : 822 - 835
  • 8Yan R H, Corzine S W, Coldren L A, et al. Corrections to the expression for gain in GaAs [ J ]. IEEE J Quantum Electron ,1990,26 (2) :213 -216
  • 9Sadovnikov A D,Xun Li, Huang W P, et al. A two - dimensional DFB laser model accounting for carrier transport effects [ J ]. IEEE J Quantum Electron, 1995,31 (10) :1856 -1862
  • 10Debaisieux G, Herve G G, Filoche M, et al. Self- consistent 1 - D solution of mulfiquantum - well laser equations [ J ]. Optical and Quantum Electronics, 1997,29 (6) :651 -660

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