摘要
A technique of improvement on diamond nucleation based on pulsed arc discharge plasma at atmospheric pressure was developed. The pulsed arc discharge was induced respectively by nitrogen, argon and methanol gas. After the arc plasma pretreatment, a nucleation density higher than 1010 cm-2 may be obtained subsequently in chemical vapor deposition (CVD) on a mirror-polished silicon substrate without any other mechanical treatment. The effects of the arc discharge plasma on the diamond nucleation were investigated by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), infrared spectroscopy (IR) and Raman spec-troscopy. The enhancement of nucleation is postulated to be a result of the formation of carbon-like phase materials or nitrogenation on the substrate surface without surface defect produced by arc discharge.
A technique of improvement on diamond nucleation based on pulsed arc discharge plasma at atmospheric pressure was developed. The pulsed arc discharge was induced respectively by nitrogen, argon and methanol gas. After the arc plasma pretreatment, a nucleation density higher than 1010 cm-2 may be obtained subsequently in chemical vapor deposition (CVD) on a mirror-polished silicon substrate without any other mechanical treatment. The effects of the arc discharge plasma on the diamond nucleation were investigated by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), infrared spectroscopy (IR) and Raman spec-troscopy. The enhancement of nucleation is postulated to be a result of the formation of carbon-like phase materials or nitrogenation on the substrate surface without surface defect produced by arc discharge.
基金
The project supported by the ChenGuang project of Wuhan City (No.20025001014)
