摘要
The Bi 2Ti 2O 7 thin films have been prepared on silicon by metalorganic deco mposition (MOD) technique using bismuth nitrate and titanium butoxide as source materials.The growth procedure of the Bi 2Ti 2O 7 thin films was discussed.Th e surface morphology of the Bi 2Ti 2O 7 film was studied by the Electri c Force Microscope (EFM).The crystallization of the films was studied by X r ay diffraction (XRD).The Bi 2Ti 2O 7 thin film prepared on (100) silicon subs trate was proved with strong (111) orientation.The dielectric properties and the current voltage (I V) characteristics were measured.The dielectric constant o f the Bi 2Ti 2O 7 thin films vs.temperature and frequency in the interval 100 8 00℃ were studied.The dielectric constang is 118 and dielectric loss is 0.07 res pectively at 100KHz at room temperature.The resistivity of the Bi 2Ti 2O 7 th in film is higher than 1×10 12 (Ω·cm) under the applied voltage from -5V to 5V.For films 0.4μm thick annealed at 580℃ for 40 minutes,their leakage cu r r ent density is 4.06×10 -7 A/cm 2 at an applied voltage of 15V.This shows the films have very good insulating property. We observed the obviously ferroelectric phase transition and its Curie temperatu re in the Bi 2Ti 2O 7 ceramic.Capacitance vs.temperature was measured with 27 800℃ at 1kHz,10kHz,100kHz and 1MHz,respectively.
The Bi 2Ti 2O 7 thin films have been prepared on silicon by metalorganic deco mposition (MOD) technique using bismuth nitrate and titanium butoxide as source materials.The growth procedure of the Bi 2Ti 2O 7 thin films was discussed.Th e surface morphology of the Bi 2Ti 2O 7 film was studied by the Electri c Force Microscope (EFM).The crystallization of the films was studied by X r ay diffraction (XRD).The Bi 2Ti 2O 7 thin film prepared on (100) silicon subs trate was proved with strong (111)...
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2000年第S1期197-197,共1页
Journal of Synthetic Crystals
