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Molecular Dynamics Simulation of Gas Diffusion in B2O3 and SiC

Molecular Dynamics Simulation of Gas Diffusion in B2O3 and SiC
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摘要 Molecular dynamics simulation using a universal force field has been employed to determine the diffusion coefficients of O2 and Na2SO4 vapor into B2O3 and SiC from 700 K to 1273 K, respectively. Einstein diffusion was observed in a 250~300 ps simulation. The diffusion coefficient for the O2 range from about 9.279×10-9 cm2/s for B2O3 to 2.275×10-10 cm2/s for SiC at a loading of 32 molecules per simulation box, that for the Na2SO4 vapor range from about 9.888×10-7 cm2/s for B2O3 to 1.837×10-10 cm2/s for SiC at a loading of 8 molecules per simulation box. Environment properties of C/SiC composite will be increased via the B2O3 preventing the diffusion of O2 and Na2SO4 vapor into the pyrolytic interphase and carbon fibers.
出处 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2003年第z1期29-31,共3页 材料科学技术(英文版)
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