摘要
基于Al2O3掺杂量为3wt%的氧化锌铝陶瓷靶材,采用直流无反应磁控溅射法在载玻片衬底上制备了ZnO∶Al透明导电薄膜。研究了氩气压强对薄膜微观结构和光电性能的影响。结果表明:氩气压强对薄膜的平均透光率影响微小,其值均在86%以上,但对薄膜的微观结构和方块电阻有非常明显的影响。随着氩气压强的增大,薄膜的晶粒形状由片状向球状变化,并呈现出c轴择优生长特性。氩气压强在0.6~3.0Pa范围内增长时,薄膜的方块电阻先缓慢减小,2.0Pa后急剧增大。在压强为1.5Pa时,薄膜具有最好的电学性能,其电阻率为1.4×10-3Ω.cm,方块电阻为10Ω/sq,优值为1.6Ω-1,符合评价标准。
Aluminium doped zinc oxide transparent conducting thin films were deposited on glass slide substrates at room temperature by direct current magnetron sputtering with power of 80W from a ZnO target doped with Al_2O_3 of 3wt%.The pressure of argon during deposition was in the range of 0.6～3.0Pa.The results show that the pressure had a little influence on the transmittance,and the average transmittance of all films exceeded 86%.However,the pressure had a big influence on microstructure,and especially on sheet resistance.As argon pressure increased,the sheet resistance decreased slightly before the pressure of 2.0Pa, and then increased sharply.Furthermore,the grain shape of the films changed from flaky particles to globe-like grains,and the grain had a(002) orientation with the c-axis.The optimal resistivity,sheet resistance and figure of merit of the film deposited at argon pressure of 1.5Pa was 1.4×10^(-3)Ω·cm,10Ω/sq and 1.6Ω^(-1),respectively.It can satisfy the evaluation criteria.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2007年第5期764-767,共4页
Journal of Materials Science and Engineering
基金
广西高校百名中青年学科带头人计划资助项目(RC20060809014)
关键词
直流磁控溅射
ZAO薄膜
方块电阻
透光率
优值
magnetron sputtering
ZAO thin films
sheet resistance
transmittance
figure of merit
