Tunable devices constructed by ferroelectric thin flms are often desired to possess a low dielectric loss while maintainging a high dielectric tunability over a broad operating temperature range in applications,for ex...Tunable devices constructed by ferroelectric thin flms are often desired to possess a low dielectric loss while maintainging a high dielectric tunability over a broad operating temperature range in applications,for example,resonators,filters,or phase shifters.However,it is dificult to simultaneously achieve these characteristics by traditional strategies,such as doping and strain modifying.Here,we demonstrate that the dielectric tunability of the sol-gel-prepared Pb(Sc_(1/2)Nb_(1/2))_(0.9)(Mg_(1/3)Nb_(2/3))_(0.O3)(PSNMN)thin film can be almost doubled from~47%to~80.0%(at 10kHz)at a low electric field(~530kV/cm),and the dielectric loss can be sharply reduced by more than an order of magnitude,from~0.50 to~0.037(at 1 kHz)when the thin flm was annealed in air at 650℃ for 15h under the help of an atmosphere-compensating-block(ACB)made from the proto-PSNMN gel.Moreover,the PSNMN thin flm annealed with ACB also exhibited an extremely high thermally-stable dielectric tunability in an ultrabroad temperature range(>130 K),which could be attributed to the Maxwell-Wagner(MW)effect generated by the interface between the PSNMN disordered matrix and the B-site nanoscale-ordered structure formed during the long-term annealing process.The reduced dielectric loss is mainly benefited from the reduced concentration of oxygen vacancy and the possibie MW efects,and the enhanced dielectric tunability could be ascribed to the weaker domain-pinning effect by oxygen vacancy.The breakthrough provides a new universal strategy to achieve utrahigh tunable performance in A(B'_(1/2)B"_(1/2))O3 ferroelectric thin films with a B-site nanoscale-ordered structure,meanwhile it paves the way for ultraintergrated tunable thin-flm-devices with great phase shifter performance in practical applications.展开更多
基金supported by the National Natural Science Foundation of China(51402196,52072218,52192613)the National Key Research and Development Program of China(2021YFB3601504)the Natural Science Foundation of Shandong Province(ZR2022YQ43).
文摘Tunable devices constructed by ferroelectric thin flms are often desired to possess a low dielectric loss while maintainging a high dielectric tunability over a broad operating temperature range in applications,for example,resonators,filters,or phase shifters.However,it is dificult to simultaneously achieve these characteristics by traditional strategies,such as doping and strain modifying.Here,we demonstrate that the dielectric tunability of the sol-gel-prepared Pb(Sc_(1/2)Nb_(1/2))_(0.9)(Mg_(1/3)Nb_(2/3))_(0.O3)(PSNMN)thin film can be almost doubled from~47%to~80.0%(at 10kHz)at a low electric field(~530kV/cm),and the dielectric loss can be sharply reduced by more than an order of magnitude,from~0.50 to~0.037(at 1 kHz)when the thin flm was annealed in air at 650℃ for 15h under the help of an atmosphere-compensating-block(ACB)made from the proto-PSNMN gel.Moreover,the PSNMN thin flm annealed with ACB also exhibited an extremely high thermally-stable dielectric tunability in an ultrabroad temperature range(>130 K),which could be attributed to the Maxwell-Wagner(MW)effect generated by the interface between the PSNMN disordered matrix and the B-site nanoscale-ordered structure formed during the long-term annealing process.The reduced dielectric loss is mainly benefited from the reduced concentration of oxygen vacancy and the possibie MW efects,and the enhanced dielectric tunability could be ascribed to the weaker domain-pinning effect by oxygen vacancy.The breakthrough provides a new universal strategy to achieve utrahigh tunable performance in A(B'_(1/2)B"_(1/2))O3 ferroelectric thin films with a B-site nanoscale-ordered structure,meanwhile it paves the way for ultraintergrated tunable thin-flm-devices with great phase shifter performance in practical applications.
