The anisotropic strain of a nonpolar (1120) a-plane GaN epilayer on an r-plane (1102) sapphire substrate, grown by low-pressure metal-organic vapour deposition is investigated by Raman spectroscopy. The room-tempe...The anisotropic strain of a nonpolar (1120) a-plane GaN epilayer on an r-plane (1102) sapphire substrate, grown by low-pressure metal-organic vapour deposition is investigated by Raman spectroscopy. The room-temperature Raman scattering spectra of nonpolar a-plane GaN are measured in surface and edge backscattering geometries. The lattice is contracted in both the c- and the m-axis directions, and the stress in the m-axis direction is larger than that in the c-axis direction. On the surface of this sample, a number of cracks appear only along the m-axis, which is confirmed by the scanning electron micrograph. Atomic force microscopy images reveal a significant decrease in the root-mean-square roughness and the density of submicron pits after the stress relief.展开更多
基金supported by the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002)the Major Program and State Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033)the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000904009)
文摘The anisotropic strain of a nonpolar (1120) a-plane GaN epilayer on an r-plane (1102) sapphire substrate, grown by low-pressure metal-organic vapour deposition is investigated by Raman spectroscopy. The room-temperature Raman scattering spectra of nonpolar a-plane GaN are measured in surface and edge backscattering geometries. The lattice is contracted in both the c- and the m-axis directions, and the stress in the m-axis direction is larger than that in the c-axis direction. On the surface of this sample, a number of cracks appear only along the m-axis, which is confirmed by the scanning electron micrograph. Atomic force microscopy images reveal a significant decrease in the root-mean-square roughness and the density of submicron pits after the stress relief.