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Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate 被引量:1
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作者 许晟瑞 郝跃 +8 位作者 张进成 薛晓咏 李培咸 李建婷 林志宇 刘子扬 马俊彩 贺强 吕玲 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第10期421-425,共5页
The anisotropic strain of a nonpolar (1120) a-plane GaN epilayer on an r-plane (1102) sapphire substrate, grown by low-pressure metal-organic vapour deposition is investigated by Raman spectroscopy. The room-tempe... The anisotropic strain of a nonpolar (1120) a-plane GaN epilayer on an r-plane (1102) sapphire substrate, grown by low-pressure metal-organic vapour deposition is investigated by Raman spectroscopy. The room-temperature Raman scattering spectra of nonpolar a-plane GaN are measured in surface and edge backscattering geometries. The lattice is contracted in both the c- and the m-axis directions, and the stress in the m-axis direction is larger than that in the c-axis direction. On the surface of this sample, a number of cracks appear only along the m-axis, which is confirmed by the scanning electron micrograph. Atomic force microscopy images reveal a significant decrease in the root-mean-square roughness and the density of submicron pits after the stress relief. 展开更多
关键词 crystal morphology nonpolar GaN RAMAN metal-organic chemical vapour deposition
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