The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and ...The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission （TE） theory are found to be strong functions of temperature, while present a great deviation from the theoretical value, which can be expounded by the barrier height inhomogeneities. In order to determine the forward current transport mechanisms, the experimental data are analyzed using numerical fitting method, considering the temperature-dependent series resistance. It is observed that the current flow at room temperature can be attributed to the tunneling mechanism, while thermionic emission current gains a growing proportion with an increase in temperature. Finally, the effective barrier height is derived based on the extracted thermionic emission component, and an evaluation of the density of dislocations is made from the I-V characteristics, giving a value of 1.49 × 10^7 cm^-2.展开更多
Wide bandgap semiconductors have become the core material system for high-power electronic devices,deep-ultraviolet optoelectronic devices,and quantum information technology,featuring high-temperature stability and op...Wide bandgap semiconductors have become the core material system for high-power electronic devices,deep-ultraviolet optoelectronic devices,and quantum information technology,featuring high-temperature stability and optoelectronic properties.First-principles calculations play an irreplaceable role in revealing the intrinsic physical properties of materials,guiding the optimization of energy-band engineering,and predicting the performance of devices through accurate modeling at the quantum mechanical level.This paper systematically reviews the key advances of first-principles calculations in wide bandgap semiconductor research in recent years:from the theoretical breakthroughs in electronic structure calculation and bandgap correction to the multiscale modeling of photoexcitation dynamics and thermal transport behavior;from the innovative design of defect formation mechanisms and doping strategies to the prediction of the performance of low-dimensional materials and heterojunction devices.The review shows that by integrating multi-body perturbation theory,machine learning algorithms,and dynamic simulation technology,first-principles calculations promote the paradigm shift from empirical exploration to theory-driven research on wide bandgap semiconductors,and the material-performance-device-function correlation model established by the study will lay the theoretical foundation for the breakthrough development of new-generation semiconductor technology.展开更多
p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of ...p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of p-GaN limit the further improvement of device performance.Thus,the more cost-effective cap layer has attracted wide attention in GaN-based HEMT.In this paper,p-type tin monoxide(p-SnO)was firstly investigated as a gate cap to realize E-mode AlGaN/GaN HEMT by both Silvaco simulation and experiment.Simulation results show that by simply adjusting the thickness(50 to 200 nm)or the doping concentration(3×10^(17)to 3×10^(18)cm^(-3))of p-SnO,the threshold voltage(V_(th))of HEMT can be continuously adjusted in the range from zero to 10 V.Simultaneously,the device demonstrated a drain current density above 120 mA mm^(-1),a gate breakdown voltage(V_(BG))of 7.5 V and a device breakdown voltage(V_(B))of 2470 V.What is more,the etching-free AlGaN/GaN HEMT with sputtered p-SnO gate cap were fabricated,and achieved a positive V_(th) of 1 V,V_(BG) of 4.2 V and V_(B) of 420 V,which confirms the application potential of the p-SnO film as a gate cap layer for E-mode GaN-based HEMT.This work is instructive to the design and manufacture of p-oxide gate cap E-mode AlGaN/GaN HEMT with low cost.展开更多
As the front-end preamplifiers in optical receivers, transimpedance amplifiers （TIAs） are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time,...As the front-end preamplifiers in optical receivers, transimpedance amplifiers （TIAs） are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range （DR） to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the -3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/√Hz within the -3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage.展开更多
A fully integrated Ku-band voltage controlled oscillator （VCO） is presented in an InGaP/GaAs hetero- junction bipolar transistor （HBT） technology. To achieve the wide tuning range （TR）, the VCO employs a Colpitt...A fully integrated Ku-band voltage controlled oscillator （VCO） is presented in an InGaP/GaAs hetero- junction bipolar transistor （HBT） technology. To achieve the wide tuning range （TR）, the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO con- sumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.展开更多
Ambient-air,moisture-assisted annealing is widely used in fabricating perovskite solar cells(PSCs).However,the inherent sensitivity of perovskite intermediate-phase to moisture—due to fast and spontaneous intermolecu...Ambient-air,moisture-assisted annealing is widely used in fabricating perovskite solar cells(PSCs).However,the inherent sensitivity of perovskite intermediate-phase to moisture—due to fast and spontaneous intermolecular exchange reaction—requires strict control of ambient humidity and immediate thermal annealing treatment,raising manufacturing costs and causing fast nucleation of perovskite films.We report herein a self-buffered molecular migration strategy to slow down the intermolecular exchange reaction by introducing a n-butylammonium bromide shielding layer,which limits moisture diffusion into intermediate-phase film.This further endows the notably wide nucleation time and humidity windows for perovskite crystallization in ambient air.Consequently,the optimized 1.68 e V-bandgap n-i-p structured PSC reaches a record-high reverse-scan(RS)PCE of 22.09%.Furthermore,the versatility and applicability of as-proposed self-buffered molecular migration strategy are certified by employing various shielding materials and 1.53 eV-/1.77 eV-bandgap perovskite materials.The n-i-p structured PSCs based on 1.53 eV-and 1.77 eV-bandgap perovskite films achieve outstanding RS PCEs of 25.23%and 19.09%,respectively,both of which are beyond of the state-of-the-art ambient-air processed PSCs.展开更多
A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thinβ-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated charac...A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thinβ-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated characteristics.Under SUV light illumination,the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5,12,and 24 V with different frequencies.Further,experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding.This work provides valuable insights for the development of optically programmable Ga_(2)O_(3)ACDC converters.展开更多
1 Introduction Ⅲ-nitride wide bandgap semiconductors, such as GaN, InN, AIN and their ternary or quaternary alloy components, are wholly-component direct band gap materials with a full adjustable band gap （0.63-6.2e...1 Introduction Ⅲ-nitride wide bandgap semiconductors, such as GaN, InN, AIN and their ternary or quaternary alloy components, are wholly-component direct band gap materials with a full adjustable band gap （0.63-6.2eV）, strong polarization, high temperature resistant, anti-radiation, and can be achieved with low-dimensional quantum structures. Furthermore, it is the only one semiconductor material system that covers ultraviolet to infrared wavelength band. Therefore, a lot of attention has been paid to them. Through unremitting efforts, blue-green light-emitting diodes （LEDs） based on InGaN/GaN quantum well materials with low in composition have been developed and successfully industrialized. Their applications in the fields of the solid-state lighting and flat-panel displays are profoundly changing people＇s lives. In addition, high power electron mobility transistor devices （HEMT） based on low A1 content AIGaN/GaN heterostructure have significant applications in the fields of X-band radar and civilian communications~ which is profoundly affecting the national security situation and the world＇s strategic pattern.展开更多
Wide-bandgap(WBG)perovskite solar cells(PSCs)are essential for highly efficient and stable silicon/perovskite tandem solar cells.In this study,we adopted a synthetic strategy with lead thiocyanate(Pb(SCN)_(2))additive...Wide-bandgap(WBG)perovskite solar cells(PSCs)are essential for highly efficient and stable silicon/perovskite tandem solar cells.In this study,we adopted a synthetic strategy with lead thiocyanate(Pb(SCN)_(2))additive and methylammonium chloride(MACl)posttreatment to enhance the crystallinity and improve the interface of WBG perovskite films with a bandgap of 1.68 eV.The excessive PbI_(2)was formed at grain boundaries and converted into MAPbI_(3-x)Cl_(x)perovskites,which are utilized to form the graded heterojunction(GHJ)and compressive strain.This is beneficial for passivating nonradiative recombination defects,suppressing halide phase segregation,and facilitating carrier extraction.Subsequently,the device with GHJ delivered a champion efficiency of 20.30%and superior stability in ambient air and under 85℃.Finally,we achieved a recorded efficiency of 30.91%for 4-terminal WBG perovskite/TOPCon tandem silicon solar cells.Our findings demonstrate a promising approach for fabricating efficient and stable WBG PSCs through the formation of GHJ.展开更多
目前,空管各类安全管理信息化平台积累了大量非结构化文本数据,但未得到充分利用,为了挖掘空管不正常事件中潜藏的风险,研究利用收集的四千余条空管站不正常事件数据和自构建的4836个空管领域专业术语词,提出了一个基于空管专业信息词...目前,空管各类安全管理信息化平台积累了大量非结构化文本数据,但未得到充分利用,为了挖掘空管不正常事件中潜藏的风险,研究利用收集的四千余条空管站不正常事件数据和自构建的4836个空管领域专业术语词,提出了一个基于空管专业信息词抽取的双向编码器表征法和双向长短时记忆网络的深度学习模型(Bidirectional Encoder Representations from Transformers-Bidirectional Long Short-Term Memory,BERT-BiLSTM)。该模型通过对不正常事件文本进行信息抽取,过滤其中无用信息,并将双向编码器表征法(Bidirectional Encoder Representations from Transformers,BERT)模型输出的特征向量序列作为双向长短时记忆网络(Bidirectional Long Short-Term Memory,BiLSTM)的输入序列,以对空管不正常事件文本风险识别任务进行对比试验。试验结果显示,在风险识别试验中,基于空管专业信息词抽取的BERT-BiLSTM模型相比于通用领域的BERT模型,风险识别准确率提升了3百分点。可以看出该模型有效提升了空管安全信息处理能力,能够有效识别空管部门日常运行中出现的不正常事件所带来的风险,同时可以为空管安全领域信息挖掘相关任务提供基础参考。展开更多
β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其...β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。展开更多
L波段数字航空通信系统(L-band digital aeronautical communication system,LDACS)作为未来航空数据链的重要技术手段之一,非常容易受到相邻波道的测距机系统信号的干扰。为此,提出一种基于稀疏贝叶斯推断的LDACS波束形成方法。首先,将...L波段数字航空通信系统(L-band digital aeronautical communication system,LDACS)作为未来航空数据链的重要技术手段之一,非常容易受到相邻波道的测距机系统信号的干扰。为此,提出一种基于稀疏贝叶斯推断的LDACS波束形成方法。首先,将LDACS地面站的粗略来向信息作为先验,并根据空域信号来向的稀疏性构建稀疏信号。随后,通过贝叶斯推断估算干扰和噪声的功率,估计各个信源的来向。最后,重构干扰噪声协方差矩阵,获得波束形成权矢量。该方法无需知晓干扰数量、干扰来向等信息。仿真结果表明,该方法在低信噪比和少快拍条件下也能稳定输出波束方向图,表现出较好性能。展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61334002)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory of China(Grant No.ZHD201206)
文摘The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission （TE） theory are found to be strong functions of temperature, while present a great deviation from the theoretical value, which can be expounded by the barrier height inhomogeneities. In order to determine the forward current transport mechanisms, the experimental data are analyzed using numerical fitting method, considering the temperature-dependent series resistance. It is observed that the current flow at room temperature can be attributed to the tunneling mechanism, while thermionic emission current gains a growing proportion with an increase in temperature. Finally, the effective barrier height is derived based on the extracted thermionic emission component, and an evaluation of the density of dislocations is made from the I-V characteristics, giving a value of 1.49 × 10^7 cm^-2.
基金the financial support received from the National Natural Science Foundation of China(Nos.12474014,62304069,12104352,and 12204294)along with additional funding from the Natural Science Foundation of Jiangsu Province(No.BK20241843)+3 种基金the Natural Science Basic Research Program of Shaanxi Province(No.2023JC-X1-01)supported by the China National Postdoctoral Program for Innovative Talents(No.BX20230281)the China Postdoctoral Science Foundation(No.2024M752520)Xidian University's Interdisciplinary Exploration Special Fund(No.TZJH2024064).
文摘Wide bandgap semiconductors have become the core material system for high-power electronic devices,deep-ultraviolet optoelectronic devices,and quantum information technology,featuring high-temperature stability and optoelectronic properties.First-principles calculations play an irreplaceable role in revealing the intrinsic physical properties of materials,guiding the optimization of energy-band engineering,and predicting the performance of devices through accurate modeling at the quantum mechanical level.This paper systematically reviews the key advances of first-principles calculations in wide bandgap semiconductor research in recent years:from the theoretical breakthroughs in electronic structure calculation and bandgap correction to the multiscale modeling of photoexcitation dynamics and thermal transport behavior;from the innovative design of defect formation mechanisms and doping strategies to the prediction of the performance of low-dimensional materials and heterojunction devices.The review shows that by integrating multi-body perturbation theory,machine learning algorithms,and dynamic simulation technology,first-principles calculations promote the paradigm shift from empirical exploration to theory-driven research on wide bandgap semiconductors,and the material-performance-device-function correlation model established by the study will lay the theoretical foundation for the breakthrough development of new-generation semiconductor technology.
基金supported by the National Natural Science Foundation of China(62003151,61925404,62074122,and 61904139)the Key Research and Development Program in Shaanxi Province(2016KTZDGY-03-01)。
文摘p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of p-GaN limit the further improvement of device performance.Thus,the more cost-effective cap layer has attracted wide attention in GaN-based HEMT.In this paper,p-type tin monoxide(p-SnO)was firstly investigated as a gate cap to realize E-mode AlGaN/GaN HEMT by both Silvaco simulation and experiment.Simulation results show that by simply adjusting the thickness(50 to 200 nm)or the doping concentration(3×10^(17)to 3×10^(18)cm^(-3))of p-SnO,the threshold voltage(V_(th))of HEMT can be continuously adjusted in the range from zero to 10 V.Simultaneously,the device demonstrated a drain current density above 120 mA mm^(-1),a gate breakdown voltage(V_(BG))of 7.5 V and a device breakdown voltage(V_(B))of 2470 V.What is more,the etching-free AlGaN/GaN HEMT with sputtered p-SnO gate cap were fabricated,and achieved a positive V_(th) of 1 V,V_(BG) of 4.2 V and V_(B) of 420 V,which confirms the application potential of the p-SnO film as a gate cap layer for E-mode GaN-based HEMT.This work is instructive to the design and manufacture of p-oxide gate cap E-mode AlGaN/GaN HEMT with low cost.
基金supported by the National Natural Science Foundation of China(Nos.61376033,61006028)the National High-Tech Program of China(Nos.2012AA012302,2013AA014103)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory
文摘As the front-end preamplifiers in optical receivers, transimpedance amplifiers （TIAs） are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range （DR） to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the -3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/√Hz within the -3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage.
基金Project supported by the National Basic Research Program of China(No.2010CBxxxx05)the Advance Research Project of China(No.51308xxxx06)+2 种基金the Advance Research Foundation of China(No.9140A08xxxx11DZ111)Doctoral Scientific Research Foundation of Henan University of Science and Technology(No.400613480011)the Foundation of He’nan Educational Commettee(No.15A510001)
文摘A fully integrated Ku-band voltage controlled oscillator （VCO） is presented in an InGaP/GaAs hetero- junction bipolar transistor （HBT） technology. To achieve the wide tuning range （TR）, the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO con- sumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.
基金the financial support from the National Key R&D Program of China(2021YFF0500500)the National Natural Science Foundation of China(62474131,62274132,and 62204189)。
文摘Ambient-air,moisture-assisted annealing is widely used in fabricating perovskite solar cells(PSCs).However,the inherent sensitivity of perovskite intermediate-phase to moisture—due to fast and spontaneous intermolecular exchange reaction—requires strict control of ambient humidity and immediate thermal annealing treatment,raising manufacturing costs and causing fast nucleation of perovskite films.We report herein a self-buffered molecular migration strategy to slow down the intermolecular exchange reaction by introducing a n-butylammonium bromide shielding layer,which limits moisture diffusion into intermediate-phase film.This further endows the notably wide nucleation time and humidity windows for perovskite crystallization in ambient air.Consequently,the optimized 1.68 e V-bandgap n-i-p structured PSC reaches a record-high reverse-scan(RS)PCE of 22.09%.Furthermore,the versatility and applicability of as-proposed self-buffered molecular migration strategy are certified by employing various shielding materials and 1.53 eV-/1.77 eV-bandgap perovskite materials.The n-i-p structured PSCs based on 1.53 eV-and 1.77 eV-bandgap perovskite films achieve outstanding RS PCEs of 25.23%and 19.09%,respectively,both of which are beyond of the state-of-the-art ambient-air processed PSCs.
基金supported by Natural Science Basic Research Program of Shaanxi Province of China(Grant No.2023JCYB574)National Natural Science Foundation of China(Grant No.62204203)。
文摘A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thinβ-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated characteristics.Under SUV light illumination,the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5,12,and 24 V with different frequencies.Further,experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding.This work provides valuable insights for the development of optically programmable Ga_(2)O_(3)ACDC converters.
文摘1 Introduction Ⅲ-nitride wide bandgap semiconductors, such as GaN, InN, AIN and their ternary or quaternary alloy components, are wholly-component direct band gap materials with a full adjustable band gap （0.63-6.2eV）, strong polarization, high temperature resistant, anti-radiation, and can be achieved with low-dimensional quantum structures. Furthermore, it is the only one semiconductor material system that covers ultraviolet to infrared wavelength band. Therefore, a lot of attention has been paid to them. Through unremitting efforts, blue-green light-emitting diodes （LEDs） based on InGaN/GaN quantum well materials with low in composition have been developed and successfully industrialized. Their applications in the fields of the solid-state lighting and flat-panel displays are profoundly changing people＇s lives. In addition, high power electron mobility transistor devices （HEMT） based on low A1 content AIGaN/GaN heterostructure have significant applications in the fields of X-band radar and civilian communications~ which is profoundly affecting the national security situation and the world＇s strategic pattern.
基金support from the National Key R&D Program of China(2022YFB3605402,2021YFF0500501)the Fundamental Research Funds for the Central Universities(YJSJ23019)+2 种基金the National Natural Science Foundation of China(62274132,61804113,61874083,and 62204189)Young Talent Fund of Association for Science and Technology in Shaanxi(20220115)the Natural Science Basic Research Program of Shaanxi(2021JC-24).
文摘Wide-bandgap(WBG)perovskite solar cells(PSCs)are essential for highly efficient and stable silicon/perovskite tandem solar cells.In this study,we adopted a synthetic strategy with lead thiocyanate(Pb(SCN)_(2))additive and methylammonium chloride(MACl)posttreatment to enhance the crystallinity and improve the interface of WBG perovskite films with a bandgap of 1.68 eV.The excessive PbI_(2)was formed at grain boundaries and converted into MAPbI_(3-x)Cl_(x)perovskites,which are utilized to form the graded heterojunction(GHJ)and compressive strain.This is beneficial for passivating nonradiative recombination defects,suppressing halide phase segregation,and facilitating carrier extraction.Subsequently,the device with GHJ delivered a champion efficiency of 20.30%and superior stability in ambient air and under 85℃.Finally,we achieved a recorded efficiency of 30.91%for 4-terminal WBG perovskite/TOPCon tandem silicon solar cells.Our findings demonstrate a promising approach for fabricating efficient and stable WBG PSCs through the formation of GHJ.
文摘目前,空管各类安全管理信息化平台积累了大量非结构化文本数据,但未得到充分利用,为了挖掘空管不正常事件中潜藏的风险,研究利用收集的四千余条空管站不正常事件数据和自构建的4836个空管领域专业术语词,提出了一个基于空管专业信息词抽取的双向编码器表征法和双向长短时记忆网络的深度学习模型(Bidirectional Encoder Representations from Transformers-Bidirectional Long Short-Term Memory,BERT-BiLSTM)。该模型通过对不正常事件文本进行信息抽取,过滤其中无用信息,并将双向编码器表征法(Bidirectional Encoder Representations from Transformers,BERT)模型输出的特征向量序列作为双向长短时记忆网络(Bidirectional Long Short-Term Memory,BiLSTM)的输入序列,以对空管不正常事件文本风险识别任务进行对比试验。试验结果显示,在风险识别试验中,基于空管专业信息词抽取的BERT-BiLSTM模型相比于通用领域的BERT模型,风险识别准确率提升了3百分点。可以看出该模型有效提升了空管安全信息处理能力,能够有效识别空管部门日常运行中出现的不正常事件所带来的风险,同时可以为空管安全领域信息挖掘相关任务提供基础参考。
文摘β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。
文摘L波段数字航空通信系统(L-band digital aeronautical communication system,LDACS)作为未来航空数据链的重要技术手段之一,非常容易受到相邻波道的测距机系统信号的干扰。为此,提出一种基于稀疏贝叶斯推断的LDACS波束形成方法。首先,将LDACS地面站的粗略来向信息作为先验,并根据空域信号来向的稀疏性构建稀疏信号。随后,通过贝叶斯推断估算干扰和噪声的功率,估计各个信源的来向。最后,重构干扰噪声协方差矩阵,获得波束形成权矢量。该方法无需知晓干扰数量、干扰来向等信息。仿真结果表明,该方法在低信噪比和少快拍条件下也能稳定输出波束方向图,表现出较好性能。
