The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and ...The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission （TE） theory are found to be strong functions of temperature, while present a great deviation from the theoretical value, which can be expounded by the barrier height inhomogeneities. In order to determine the forward current transport mechanisms, the experimental data are analyzed using numerical fitting method, considering the temperature-dependent series resistance. It is observed that the current flow at room temperature can be attributed to the tunneling mechanism, while thermionic emission current gains a growing proportion with an increase in temperature. Finally, the effective barrier height is derived based on the extracted thermionic emission component, and an evaluation of the density of dislocations is made from the I-V characteristics, giving a value of 1.49 × 10^7 cm^-2.展开更多
Wide bandgap semiconductors have become the core material system for high-power electronic devices,deep-ultraviolet optoelectronic devices,and quantum information technology,featuring high-temperature stability and op...Wide bandgap semiconductors have become the core material system for high-power electronic devices,deep-ultraviolet optoelectronic devices,and quantum information technology,featuring high-temperature stability and optoelectronic properties.First-principles calculations play an irreplaceable role in revealing the intrinsic physical properties of materials,guiding the optimization of energy-band engineering,and predicting the performance of devices through accurate modeling at the quantum mechanical level.This paper systematically reviews the key advances of first-principles calculations in wide bandgap semiconductor research in recent years:from the theoretical breakthroughs in electronic structure calculation and bandgap correction to the multiscale modeling of photoexcitation dynamics and thermal transport behavior;from the innovative design of defect formation mechanisms and doping strategies to the prediction of the performance of low-dimensional materials and heterojunction devices.The review shows that by integrating multi-body perturbation theory,machine learning algorithms,and dynamic simulation technology,first-principles calculations promote the paradigm shift from empirical exploration to theory-driven research on wide bandgap semiconductors,and the material-performance-device-function correlation model established by the study will lay the theoretical foundation for the breakthrough development of new-generation semiconductor technology.展开更多
p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of ...p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of p-GaN limit the further improvement of device performance.Thus,the more cost-effective cap layer has attracted wide attention in GaN-based HEMT.In this paper,p-type tin monoxide(p-SnO)was firstly investigated as a gate cap to realize E-mode AlGaN/GaN HEMT by both Silvaco simulation and experiment.Simulation results show that by simply adjusting the thickness(50 to 200 nm)or the doping concentration(3×10^(17)to 3×10^(18)cm^(-3))of p-SnO,the threshold voltage(V_(th))of HEMT can be continuously adjusted in the range from zero to 10 V.Simultaneously,the device demonstrated a drain current density above 120 mA mm^(-1),a gate breakdown voltage(V_(BG))of 7.5 V and a device breakdown voltage(V_(B))of 2470 V.What is more,the etching-free AlGaN/GaN HEMT with sputtered p-SnO gate cap were fabricated,and achieved a positive V_(th) of 1 V,V_(BG) of 4.2 V and V_(B) of 420 V,which confirms the application potential of the p-SnO film as a gate cap layer for E-mode GaN-based HEMT.This work is instructive to the design and manufacture of p-oxide gate cap E-mode AlGaN/GaN HEMT with low cost.展开更多
As the front-end preamplifiers in optical receivers, transimpedance amplifiers （TIAs） are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time,...As the front-end preamplifiers in optical receivers, transimpedance amplifiers （TIAs） are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range （DR） to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the -3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/√Hz within the -3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage.展开更多
A fully integrated Ku-band voltage controlled oscillator （VCO） is presented in an InGaP/GaAs hetero- junction bipolar transistor （HBT） technology. To achieve the wide tuning range （TR）, the VCO employs a Colpitt...A fully integrated Ku-band voltage controlled oscillator （VCO） is presented in an InGaP/GaAs hetero- junction bipolar transistor （HBT） technology. To achieve the wide tuning range （TR）, the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO con- sumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.展开更多
Materials exhibiting broadband nonlinear optical responses are critically important for ultrafast photonics applications,particularly as saturable absorbers(SAs)that facilitate broadband optical pulse generation.In th...Materials exhibiting broadband nonlinear optical responses are critically important for ultrafast photonics applications,particularly as saturable absorbers(SAs)that facilitate broadband optical pulse generation.In this study,tea polyphenolpolyvinyl alcohol(TP-PVA)composite films are synthesized via a polymer embedding method and employed as SAs to initiate ultrafast pulse operation in fiber lasers.The TP-PVA SA film exhibits excellent broadband saturable absorption performance at wavelengths of 1.0μm,1.5μm,and 2.0μm,with modulation depths of 54.21%,41.41%,and 51.16%,respectively.Stable passively mode-locked pulses with pulse widths of 588 fs,419 fs,and 743 fs are generated in Yb-,Er-,and Tm-doped fiber lasers,respectively.This work confirms the effective performance of TP-PVA as a broadband SA,and establishes a foundation for the integration of novel and sustainable materials within ultrafast photonic systems.The approach paves the way for developing compact broadband ultrafast laser systems operating in the near-infrared spectral region.展开更多
Ambient-air,moisture-assisted annealing is widely used in fabricating perovskite solar cells(PSCs).However,the inherent sensitivity of perovskite intermediate-phase to moisture—due to fast and spontaneous intermolecu...Ambient-air,moisture-assisted annealing is widely used in fabricating perovskite solar cells(PSCs).However,the inherent sensitivity of perovskite intermediate-phase to moisture—due to fast and spontaneous intermolecular exchange reaction—requires strict control of ambient humidity and immediate thermal annealing treatment,raising manufacturing costs and causing fast nucleation of perovskite films.We report herein a self-buffered molecular migration strategy to slow down the intermolecular exchange reaction by introducing a n-butylammonium bromide shielding layer,which limits moisture diffusion into intermediate-phase film.This further endows the notably wide nucleation time and humidity windows for perovskite crystallization in ambient air.Consequently,the optimized 1.68 e V-bandgap n-i-p structured PSC reaches a record-high reverse-scan(RS)PCE of 22.09%.Furthermore,the versatility and applicability of as-proposed self-buffered molecular migration strategy are certified by employing various shielding materials and 1.53 eV-/1.77 eV-bandgap perovskite materials.The n-i-p structured PSCs based on 1.53 eV-and 1.77 eV-bandgap perovskite films achieve outstanding RS PCEs of 25.23%and 19.09%,respectively,both of which are beyond of the state-of-the-art ambient-air processed PSCs.展开更多
A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated chara...A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated characteristics.Under SUV light illumination,the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5,12,and 24 V with different frequencies.Further,experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding.This work provides valuable insights for the development of optically programmable Ga_(2)O_(3)ACDC converters.展开更多
A major challenge for n-i-p structured perovskite/silicon tandem solar cells(TSCs)is the use of 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene(spiro-OMe TAD),a commonly used hole transport la...A major challenge for n-i-p structured perovskite/silicon tandem solar cells(TSCs)is the use of 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene(spiro-OMe TAD),a commonly used hole transport layer,which induces significant optical losses and consequently reduces device current.Herein,we propose an ultra-thin(10 nm)vacuum thermal evaporation(VTE)-deposited spiro-OMe TAD,coupled with a 2D/3D perovskite heterojunction,to simultaneously enhance the optical and electrical properties of n-i-p perovskite/silicon TSCs.Our results demonstrate that the 10-nm-thick spiro-OMe TAD layer significantly improves optical performance,achieving a 92.2% reduction in parasitic absorption and an 18.4%decrease in reflection losses.Additionally,the incorporation of the 2D/3D perovskite heterojunction facilitates improved molecular arrangement and enhanced surface uniformity of the ultrathin spiro-OMe TAD,leading to higher tolerance to interface defects and more efficient hole extraction.Consequently,n-i-p perovskite/silicon TSCs featuring ultrathin spiro-OMe TAD exhibit remarkable efficiencies of 29.73%(0.135 cm^(2))and 28.77%(28.25% certified efficiency,1.012 cm^(2)),along with improved stability.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61334002)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory of China(Grant No.ZHD201206)
文摘The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission （TE） theory are found to be strong functions of temperature, while present a great deviation from the theoretical value, which can be expounded by the barrier height inhomogeneities. In order to determine the forward current transport mechanisms, the experimental data are analyzed using numerical fitting method, considering the temperature-dependent series resistance. It is observed that the current flow at room temperature can be attributed to the tunneling mechanism, while thermionic emission current gains a growing proportion with an increase in temperature. Finally, the effective barrier height is derived based on the extracted thermionic emission component, and an evaluation of the density of dislocations is made from the I-V characteristics, giving a value of 1.49 × 10^7 cm^-2.
基金the financial support received from the National Natural Science Foundation of China(Nos.12474014,62304069,12104352,and 12204294)along with additional funding from the Natural Science Foundation of Jiangsu Province(No.BK20241843)+3 种基金the Natural Science Basic Research Program of Shaanxi Province(No.2023JC-X1-01)supported by the China National Postdoctoral Program for Innovative Talents(No.BX20230281)the China Postdoctoral Science Foundation(No.2024M752520)Xidian University's Interdisciplinary Exploration Special Fund(No.TZJH2024064).
文摘Wide bandgap semiconductors have become the core material system for high-power electronic devices,deep-ultraviolet optoelectronic devices,and quantum information technology,featuring high-temperature stability and optoelectronic properties.First-principles calculations play an irreplaceable role in revealing the intrinsic physical properties of materials,guiding the optimization of energy-band engineering,and predicting the performance of devices through accurate modeling at the quantum mechanical level.This paper systematically reviews the key advances of first-principles calculations in wide bandgap semiconductor research in recent years:from the theoretical breakthroughs in electronic structure calculation and bandgap correction to the multiscale modeling of photoexcitation dynamics and thermal transport behavior;from the innovative design of defect formation mechanisms and doping strategies to the prediction of the performance of low-dimensional materials and heterojunction devices.The review shows that by integrating multi-body perturbation theory,machine learning algorithms,and dynamic simulation technology,first-principles calculations promote the paradigm shift from empirical exploration to theory-driven research on wide bandgap semiconductors,and the material-performance-device-function correlation model established by the study will lay the theoretical foundation for the breakthrough development of new-generation semiconductor technology.
基金supported by the National Natural Science Foundation of China(62003151,61925404,62074122,and 61904139)the Key Research and Development Program in Shaanxi Province(2016KTZDGY-03-01)。
文摘p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of p-GaN limit the further improvement of device performance.Thus,the more cost-effective cap layer has attracted wide attention in GaN-based HEMT.In this paper,p-type tin monoxide(p-SnO)was firstly investigated as a gate cap to realize E-mode AlGaN/GaN HEMT by both Silvaco simulation and experiment.Simulation results show that by simply adjusting the thickness(50 to 200 nm)or the doping concentration(3×10^(17)to 3×10^(18)cm^(-3))of p-SnO,the threshold voltage(V_(th))of HEMT can be continuously adjusted in the range from zero to 10 V.Simultaneously,the device demonstrated a drain current density above 120 mA mm^(-1),a gate breakdown voltage(V_(BG))of 7.5 V and a device breakdown voltage(V_(B))of 2470 V.What is more,the etching-free AlGaN/GaN HEMT with sputtered p-SnO gate cap were fabricated,and achieved a positive V_(th) of 1 V,V_(BG) of 4.2 V and V_(B) of 420 V,which confirms the application potential of the p-SnO film as a gate cap layer for E-mode GaN-based HEMT.This work is instructive to the design and manufacture of p-oxide gate cap E-mode AlGaN/GaN HEMT with low cost.
基金supported by the National Natural Science Foundation of China(Nos.61376033,61006028)the National High-Tech Program of China(Nos.2012AA012302,2013AA014103)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory
文摘As the front-end preamplifiers in optical receivers, transimpedance amplifiers （TIAs） are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range （DR） to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the -3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/√Hz within the -3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage.
基金Project supported by the National Basic Research Program of China(No.2010CBxxxx05)the Advance Research Project of China(No.51308xxxx06)+2 种基金the Advance Research Foundation of China(No.9140A08xxxx11DZ111)Doctoral Scientific Research Foundation of Henan University of Science and Technology(No.400613480011)the Foundation of He’nan Educational Commettee(No.15A510001)
文摘A fully integrated Ku-band voltage controlled oscillator （VCO） is presented in an InGaP/GaAs hetero- junction bipolar transistor （HBT） technology. To achieve the wide tuning range （TR）, the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO con- sumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.
基金supported by the Opening Foundation of Hubei Key Laboratory for New Textile Materials and Applications Research(Grant No.FZXCL202410)the Key Project of Science and Technology Research Program of Hubei Provincial Department of Education,China(Grant No.D20231704)+1 种基金Wuhan Textile University(Grant No.523058)the Foundation of Wuhan Textile University(Grant No.K24058)。
文摘Materials exhibiting broadband nonlinear optical responses are critically important for ultrafast photonics applications,particularly as saturable absorbers(SAs)that facilitate broadband optical pulse generation.In this study,tea polyphenolpolyvinyl alcohol(TP-PVA)composite films are synthesized via a polymer embedding method and employed as SAs to initiate ultrafast pulse operation in fiber lasers.The TP-PVA SA film exhibits excellent broadband saturable absorption performance at wavelengths of 1.0μm,1.5μm,and 2.0μm,with modulation depths of 54.21%,41.41%,and 51.16%,respectively.Stable passively mode-locked pulses with pulse widths of 588 fs,419 fs,and 743 fs are generated in Yb-,Er-,and Tm-doped fiber lasers,respectively.This work confirms the effective performance of TP-PVA as a broadband SA,and establishes a foundation for the integration of novel and sustainable materials within ultrafast photonic systems.The approach paves the way for developing compact broadband ultrafast laser systems operating in the near-infrared spectral region.
基金the financial support from the National Key R&D Program of China(2021YFF0500500)the National Natural Science Foundation of China(62474131,62274132,and 62204189)。
文摘Ambient-air,moisture-assisted annealing is widely used in fabricating perovskite solar cells(PSCs).However,the inherent sensitivity of perovskite intermediate-phase to moisture—due to fast and spontaneous intermolecular exchange reaction—requires strict control of ambient humidity and immediate thermal annealing treatment,raising manufacturing costs and causing fast nucleation of perovskite films.We report herein a self-buffered molecular migration strategy to slow down the intermolecular exchange reaction by introducing a n-butylammonium bromide shielding layer,which limits moisture diffusion into intermediate-phase film.This further endows the notably wide nucleation time and humidity windows for perovskite crystallization in ambient air.Consequently,the optimized 1.68 e V-bandgap n-i-p structured PSC reaches a record-high reverse-scan(RS)PCE of 22.09%.Furthermore,the versatility and applicability of as-proposed self-buffered molecular migration strategy are certified by employing various shielding materials and 1.53 eV-/1.77 eV-bandgap perovskite materials.The n-i-p structured PSCs based on 1.53 eV-and 1.77 eV-bandgap perovskite films achieve outstanding RS PCEs of 25.23%and 19.09%,respectively,both of which are beyond of the state-of-the-art ambient-air processed PSCs.
基金supported by Natural Science Basic Research Program of Shaanxi Province of China(Grant No.2023JCYB574)National Natural Science Foundation of China(Grant No.62204203)。
文摘A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated characteristics.Under SUV light illumination,the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5,12,and 24 V with different frequencies.Further,experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding.This work provides valuable insights for the development of optically programmable Ga_(2)O_(3)ACDC converters.
基金supported by the National Key Research and Development Program of China(Grant No.2024YFB3817304)the National Natural Science Foundation of China(Grant No.61874177)+4 种基金Zhejiang Provincial Natural Science Foundation of China(Grant No.LQN25F040009)Ningbo Natural Science Foundation(Grant No.2024J226)China Postdoctoral Science Foundation(Grant No.GZB20230787,2024M753344)Baima Lake Laboratory Joint Funds of the Zhejiang Provincial Natural Science Foundation of China(Grant No.LBMHD24E020002)Key Research and Development Program of Ningbo(Grant No.2023Z151)。
文摘A major challenge for n-i-p structured perovskite/silicon tandem solar cells(TSCs)is the use of 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene(spiro-OMe TAD),a commonly used hole transport layer,which induces significant optical losses and consequently reduces device current.Herein,we propose an ultra-thin(10 nm)vacuum thermal evaporation(VTE)-deposited spiro-OMe TAD,coupled with a 2D/3D perovskite heterojunction,to simultaneously enhance the optical and electrical properties of n-i-p perovskite/silicon TSCs.Our results demonstrate that the 10-nm-thick spiro-OMe TAD layer significantly improves optical performance,achieving a 92.2% reduction in parasitic absorption and an 18.4%decrease in reflection losses.Additionally,the incorporation of the 2D/3D perovskite heterojunction facilitates improved molecular arrangement and enhanced surface uniformity of the ultrathin spiro-OMe TAD,leading to higher tolerance to interface defects and more efficient hole extraction.Consequently,n-i-p perovskite/silicon TSCs featuring ultrathin spiro-OMe TAD exhibit remarkable efficiencies of 29.73%(0.135 cm^(2))and 28.77%(28.25% certified efficiency,1.012 cm^(2)),along with improved stability.
