The thermoelectric properties at elevated temperature were investigated for n-type Bi2（Te,Se）3 which is obtained from ball milling processed powder with various milling times. Electrical properties such as electrica...The thermoelectric properties at elevated temperature were investigated for n-type Bi2（Te,Se）3 which is obtained from ball milling processed powder with various milling times. Electrical properties such as electrical resistivity and Seebeck coefficient are clearly dependent on milling time, in which the carrier concentration is attributed to the change of the electrical properties. The concentrations of the defects are also varied with the ball milling time, which is the origin of the carrier concentration variation. Even though finer grain sizes are obtained after the long ball milling time, the temperature dependence of the thermal conductivity is not solely understood with the grain size, whereas the electrical contribution to the thermal conductivity should be also considered. The highest figure of merit value of ZT = 0.83 is achieved at 373 K for the optimized samples, in which ball milling time is 10 h. The obtained ZT value is 48% improvement over that of the 0.5-h sample at 373 K.展开更多
The molecular dynamics method is used to simulate the thermophysical properties of SrTiO3 thermoelectric material in the temperature range 300-2200 K. The Morse-type potential functions added to the Busing-Ida type po...The molecular dynamics method is used to simulate the thermophysical properties of SrTiO3 thermoelectric material in the temperature range 300-2200 K. The Morse-type potential functions added to the Busing-Ida type potential for interatomic interaction are used in the simulation. The interatomic potential parameters are determined by fitting to the experimental data of lattice parameters with temperature and the data reported in literature. The linear thermal expansion coefficient, heat capacity and lattice contributions to the thermal conductivity are analyzed. The results agree with the data reported in the literature.展开更多
The thin films were deposited on the glass substrates by an asymmetric bipolar pulsed-dc magnetron sputtering system using the Ca3Co4O9 and CaMnO3 Targets (n-type) targets of 60 mm diameter and 2.5 mm thickness. The t...The thin films were deposited on the glass substrates by an asymmetric bipolar pulsed-dc magnetron sputtering system using the Ca3Co4O9 and CaMnO3 Targets (n-type) targets of 60 mm diameter and 2.5 mm thickness. The targets were prepared from powder precursors, which obtained by a solid state reaction. Optical emissions from plasmas during sputter depositions of films were detected using a high resolution spectrometer. Thickness of thin film was estimated by Tolansky’s Fizeau fringe method and ellipsometic measurement. Crystal structures were studied from X-ray diffraction. The thermoelectric properties were assessed from Seebeck coefficient and electrical resistivity measurements at room temperature. The power factors were calculated. It was found that the optical emission spectrums showed that the Ca, Mn, Co and O atoms were sputtered from the targets onto glass substrates. As-deposited Ca-Co-O and Ca-Mn-O films thickness values were 0.435 ?m and 0.449 ?m, respectively. The X-ray diffraction patterns clearly showed amorphous nature of the as-deposited films. Determining thermoelectric properties of Ca-Co-O film gave Seebeck coefficient of 0.146 mV/K, electrical resistivity of 0.473Ω.cm, and power factor of 4.531 μW/m?K at room temperature. Ca-Mn-O film baring a high resistance was not the experimental determination of thermoelectric properties.展开更多
基金supported by the research fund of Hanbat National University in 2015
文摘The thermoelectric properties at elevated temperature were investigated for n-type Bi2（Te,Se）3 which is obtained from ball milling processed powder with various milling times. Electrical properties such as electrical resistivity and Seebeck coefficient are clearly dependent on milling time, in which the carrier concentration is attributed to the change of the electrical properties. The concentrations of the defects are also varied with the ball milling time, which is the origin of the carrier concentration variation. Even though finer grain sizes are obtained after the long ball milling time, the temperature dependence of the thermal conductivity is not solely understood with the grain size, whereas the electrical contribution to the thermal conductivity should be also considered. The highest figure of merit value of ZT = 0.83 is achieved at 373 K for the optimized samples, in which ball milling time is 10 h. The obtained ZT value is 48% improvement over that of the 0.5-h sample at 373 K.
文摘The molecular dynamics method is used to simulate the thermophysical properties of SrTiO3 thermoelectric material in the temperature range 300-2200 K. The Morse-type potential functions added to the Busing-Ida type potential for interatomic interaction are used in the simulation. The interatomic potential parameters are determined by fitting to the experimental data of lattice parameters with temperature and the data reported in literature. The linear thermal expansion coefficient, heat capacity and lattice contributions to the thermal conductivity are analyzed. The results agree with the data reported in the literature.
文摘The thin films were deposited on the glass substrates by an asymmetric bipolar pulsed-dc magnetron sputtering system using the Ca3Co4O9 and CaMnO3 Targets (n-type) targets of 60 mm diameter and 2.5 mm thickness. The targets were prepared from powder precursors, which obtained by a solid state reaction. Optical emissions from plasmas during sputter depositions of films were detected using a high resolution spectrometer. Thickness of thin film was estimated by Tolansky’s Fizeau fringe method and ellipsometic measurement. Crystal structures were studied from X-ray diffraction. The thermoelectric properties were assessed from Seebeck coefficient and electrical resistivity measurements at room temperature. The power factors were calculated. It was found that the optical emission spectrums showed that the Ca, Mn, Co and O atoms were sputtered from the targets onto glass substrates. As-deposited Ca-Co-O and Ca-Mn-O films thickness values were 0.435 ?m and 0.449 ?m, respectively. The X-ray diffraction patterns clearly showed amorphous nature of the as-deposited films. Determining thermoelectric properties of Ca-Co-O film gave Seebeck coefficient of 0.146 mV/K, electrical resistivity of 0.473Ω.cm, and power factor of 4.531 μW/m?K at room temperature. Ca-Mn-O film baring a high resistance was not the experimental determination of thermoelectric properties.
