Sr2SiO4∶Eu 3+ ,Bi 3+ and SrSiO 3∶Eu 3+ ,Bi 3+ samples were synthesized at high temperature and high pressure. The effect of high pressure on the structure and luminescence properties of the samples were ...Sr2SiO4∶Eu 3+ ,Bi 3+ and SrSiO 3∶Eu 3+ ,Bi 3+ samples were synthesized at high temperature and high pressure. The effect of high pressure on the structure and luminescence properties of the samples were studied. As a comparison, the samples were also prepared by the method of sol-gel at high temperature and atmospheric pressure. The SrSiO 3∶Eu 3+ ,Bi 3+ prepared at atmosphere has a hexagonal phase structure; in the pressure range of 2 34-4 10 GPa, it is transformed into a pseudo-orthorhombic structure(monoclinic), and in the pressure range of 4 10-4 15 GPa, the structure change of Sr 2SiO 4∶Eu 3+ , Bi 3+ has not been observed, it maintains the monoclinic structure of the samples synthesized at an atmospheric pressure. High pressure makes the luminescence properties of the samples changed obviously. The intensity and the relative quantum luminescent efficiency decrease, the half-width increases obviously and the red shift occurs. The changes of the luminescence properties result from the pressure-induced changes of the crystal structures.展开更多
The effects of the incorporated oxygen and the different buffer layers on the optical properties and surface morphology of GaN were studied. The results show that the decrease of the concentration of the incorporated ...The effects of the incorporated oxygen and the different buffer layers on the optical properties and surface morphology of GaN were studied. The results show that the decrease of the concentration of the incorporated oxygen has no effect on the surface morphology, but improves the optical properties. While the introduction of the AlN buffer layer makes not only the surface morphology but also the optical properties improve. Both the oxygen contamination from the nitrogen source and the resulted morphology are directly related to the line width of the low-temperature photoluminescence(PL) spectra.展开更多
A series of GaN layers was grown on sapphire (0001) substrates under various growth conditions by means of the molecular beam epitaxy(MBE) method, the optical characteristics and surface morphologies of the samples we...A series of GaN layers was grown on sapphire (0001) substrates under various growth conditions by means of the molecular beam epitaxy(MBE) method, the optical characteristics and surface morphologies of the samples were studied. The results show that the line width of the GaN emission gradually decreases and the peak shifts under the Ga-rich condition by increasing the Ga-flux on keeping all other growth conditions unchanged. It has been also found that the resulted morphology is directly related to the Ga-flux.展开更多
基金Supported by the Science and Technology Bureau of Jilin Province( No. 2 0 0 2 0 6 15 ) and the Overseas- back Scholar Pro-gram of Ministry of Personnel of China
文摘Sr2SiO4∶Eu 3+ ,Bi 3+ and SrSiO 3∶Eu 3+ ,Bi 3+ samples were synthesized at high temperature and high pressure. The effect of high pressure on the structure and luminescence properties of the samples were studied. As a comparison, the samples were also prepared by the method of sol-gel at high temperature and atmospheric pressure. The SrSiO 3∶Eu 3+ ,Bi 3+ prepared at atmosphere has a hexagonal phase structure; in the pressure range of 2 34-4 10 GPa, it is transformed into a pseudo-orthorhombic structure(monoclinic), and in the pressure range of 4 10-4 15 GPa, the structure change of Sr 2SiO 4∶Eu 3+ , Bi 3+ has not been observed, it maintains the monoclinic structure of the samples synthesized at an atmospheric pressure. High pressure makes the luminescence properties of the samples changed obviously. The intensity and the relative quantum luminescent efficiency decrease, the half-width increases obviously and the red shift occurs. The changes of the luminescence properties result from the pressure-induced changes of the crystal structures.
文摘The effects of the incorporated oxygen and the different buffer layers on the optical properties and surface morphology of GaN were studied. The results show that the decrease of the concentration of the incorporated oxygen has no effect on the surface morphology, but improves the optical properties. While the introduction of the AlN buffer layer makes not only the surface morphology but also the optical properties improve. Both the oxygen contamination from the nitrogen source and the resulted morphology are directly related to the line width of the low-temperature photoluminescence(PL) spectra.
基金the Science and Technology Bureau of Jilin Province(No.2 0 0 2 0 6 15 ) and The Overseas- back ScholarProgram of Ministry of Personnel of China
文摘A series of GaN layers was grown on sapphire (0001) substrates under various growth conditions by means of the molecular beam epitaxy(MBE) method, the optical characteristics and surface morphologies of the samples were studied. The results show that the line width of the GaN emission gradually decreases and the peak shifts under the Ga-rich condition by increasing the Ga-flux on keeping all other growth conditions unchanged. It has been also found that the resulted morphology is directly related to the Ga-flux.
