期刊文献+
共找到9篇文章
< 1 >
每页显示 20 50 100
热线式空气流量变送器 被引量:3
1
作者 SONG Yan-zheng 宋彦峥 +1 位作者 亢春梅 徐凌 《传感器技术》 CSCD 北大核心 2001年第6期44-45,48,共3页
设计并研制一种热线式空气流量变送器 ,其准确度达到± 1% ,并具有极好的响应速度。
关键词 空气流量 热线 传感器 变送器
在线阅读 下载PDF
Widely tunable dual-pump parametric amplifiers with photonic crystal fibres 被引量:1
2
作者 李永忠 钱列加 +2 位作者 陆大全 范滇元 陈光辉 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第1期205-210,共6页
This paper theoretically studies the double-pumped fibre-optical parametric amplifiers (FOPAs) in photonic crystal fibres. Two distinct working regimes of FOPAs are researched, which depend on the dispersion at the ... This paper theoretically studies the double-pumped fibre-optical parametric amplifiers (FOPAs) in photonic crystal fibres. Two distinct working regimes of FOPAs are researched, which depend on the dispersion at the central wavelength of the two pumps. Extremely broad tuning range can be obtained when the central pump wavelength is in the normal dispersion regime and is insensitive to the wavelength separation between the two pumps, while the tuning range is narrow in the anomalous dispersion regime and can be significantly enhanced by increasing the wavelength separation. Impacts of higher-order dispersions and temporal walk-off on the gain spectra are also discussed. 展开更多
关键词 nonlinear optics parametric amplification photonic crystal fibres DISPERSION
原文传递
Characterization of Cd1-xZnxTe(0≤x≤1) Nanolayers Grown by Atomic Layer Deposition on GaSb and GaAs(001) Oriented Substrates
3
作者 Joel Díaz-Reyes Roberto Saúl Castillo-Ojeda José Eladio Flores-Mena 《Journal of Electronic Science and Technology》 CAS CSCD 2019年第2期97-108,共12页
ZnTe, CdTe, and the ternary alloy CdZnTe are important semiconductor materials used widely for the detection of an important range of electromagnetic radiation as gamma ray and X-ray. Although, recently these material... ZnTe, CdTe, and the ternary alloy CdZnTe are important semiconductor materials used widely for the detection of an important range of electromagnetic radiation as gamma ray and X-ray. Although, recently these materials have acquired renewed importance due to the new explored nanolayer properties of modern devices. In addition, as shown in this work they can be grown using uncomplicated synthesis techniques based on the deposition in vapour phase of the elemental precursors. This work presents the results obtained from the deposition of nanolayers of these materials using the precursor vapour on GaAs and GaSb (001) substrates. This growth technique, extensively known as atomic layer deposition (ALD), allows the layers growth with nanometric dimension. The main results presented in this work are the used growth parameters and the results of the structural characterization of the layers by the means of Raman spectroscopy measurements. Raman scattering shows the peak corresponding to longitudinal optical (LO)-ZnTe, which is weak and slightly redshift in comparison with that reported for the ZnTe bulk at 210 cm^-1. For the case of the CdTe nanolayer, Raman spectra presented the LO-CdTe peak, which is indicative of the successful growth of the layer. Its weak and slightly redshift in comparison with that reported for the CdTe bulk can be related with the nanometric characteristic of this layer. The performed high-resolution X-ray diffraction (HR-XRD) measurement allows to study some important characteristics such as the crystallinity of the grown layer. In addition, the HR-XRD measurement suggests that the crystalline quality has dependence on the growth temperature. 展开更多
关键词 Ⅲ-Ⅴ SUBSTRATES atomic layer deposition(ALD) defect generation mechanism TERNARY alloy Cd1-xZnxTe Zn and Cd mixture
在线阅读 下载PDF
Metal cathode patterning for OLED by nanosecond pulsed laser ablation
4
作者 LIU Chen ZHU Guang-xi LIU De-ming 《Optoelectronics Letters》 EI 2006年第6期426-429,共4页
In this paper,nanosecond pulsed laser is introduced to selectively ablate away indium tin oxide film and metal film without destroying the underlying layers for fabricating organic light-emitting diodes.By varying den... In this paper,nanosecond pulsed laser is introduced to selectively ablate away indium tin oxide film and metal film without destroying the underlying layers for fabricating organic light-emitting diodes.By varying density of energy,pulse number and width of the laser,the influence on morphology of the laser trenches of indium tin oxide and metal films are investigated.It is presented that uniform ablation trench can be obtained with 16 laser pulses at 0.15 J/cm^2 for aluminum film and 10 laser pulses at 0.65 J/cm^2 for indium tin oxide film.It is found that the characteristics of the organic light-emitting diodes prepared with laser ablation are almost the same as those of that prepared with conventional patterning method. 展开更多
关键词 金属阴极 OLED 纳秒脉冲激光消融 金属薄膜
在线阅读 下载PDF
集成电路工艺制作的微型马达的摩擦研究
5
作者 YU-CHONGTAI RICHARDS.MULLER 李明祥 《电子器件》 CAS 1990年第3期47-48,共2页
<正>目前已有了关于集成电路工艺制作的微型马达的摩擦与试验的报道~1.对马达工作的动态过程也作了讨论.从理论上讲,其结论~2是:摩擦效应不仅可以限制转动最高速度,而且当马达偏置在开环控制状态时,摩擦可以决定马达是以同步模式... <正>目前已有了关于集成电路工艺制作的微型马达的摩擦与试验的报道~1.对马达工作的动态过程也作了讨论.从理论上讲,其结论~2是:摩擦效应不仅可以限制转动最高速度,而且当马达偏置在开环控制状态时,摩擦可以决定马达是以同步模式工作,还是以异步模式工作.在文献[2]中,仅作了定性的讨论.本文中,我们提出一个定量的摩擦模型来解释由实验获得的马达工作数据.模型中,首先假设摩擦力矩是恒量,并利用数值方法求解运动方程.我们把摩擦力矩当作一个修正因子处理以便与实验情况相符,但是恒定摩擦力矩模型不能解释实验中的一些现象.一个更为精确的摩擦模型必须把静态摩擦也考虑进去.这时的运动方程是: 展开更多
关键词 集成电路 工艺 微型马达 摩擦
在线阅读 下载PDF
Full Graph Methods of Switched Current Circuit Solution
6
作者 Bohumil Brtnik 《Computer Technology and Application》 2011年第6期471-478,共8页
Circuits with switched current are described by an admittance matrix and seeking current transfers then means calculating the ratio of algebraic supplements of this matrix. As there are also graph methods of circuit a... Circuits with switched current are described by an admittance matrix and seeking current transfers then means calculating the ratio of algebraic supplements of this matrix. As there are also graph methods of circuit analysis in addition to algebraic methods, it is clearly possible in theory to carry out an analysis of the whole switched circuit in two-phase switching exclusively by the graph method as well. For this purpose it is possible to plot a Mason graph of a circuit, use transformation graphs to reduce Mason graphs for all the four phases of switching, and then plot a summary graph from the transformed graphs obtained this way. First the author draws nodes and possible branches, obtained by transformation graphs for transfers of EE (even-even) and OO (odd-odd) phases. In the next step, branches obtained by transformation graphs for EO and OE phase are drawn between these nodes, while their resulting transfer is 1 multiplied by z^1/2. This summary graph is extended by two branches from input node and to output node, the extended graph can then be interpreted by the Mason's relation to provide transparent current transfers. Therefore it is not necessary to compose a sum admittance matrix and to express this consequently in numbers, and so it is possible to reach the final result in a graphical way. 展开更多
关键词 Switched current circuits two phases transformation graph Mason's formula current transfer summary MC-graph
在线阅读 下载PDF
带小球的高级银浆技术帮助解决常见的封装挑战
7
作者 Michael Buckley Jeremy Alonte 《电子工业专用设备》 2007年第8期54-54,共1页
随着在手持设备中对内存容量的增长需求,并为了在固定尺寸的内存卡中存入更多的内容,一种堆叠超薄内存芯片的技术开始进入这一领域来满足这些苛刻的要求。当使用银浆来堆叠芯片时,工程师会采用楼梯、金字塔或者交叉的方式来实现。如... 随着在手持设备中对内存容量的增长需求,并为了在固定尺寸的内存卡中存入更多的内容,一种堆叠超薄内存芯片的技术开始进入这一领域来满足这些苛刻的要求。当使用银浆来堆叠芯片时,工程师会采用楼梯、金字塔或者交叉的方式来实现。如果封装工厂希望采用银浆,目前有两种技术来保证在芯片之间有足够的空间来进行打线:假芯片或带小球的银浆。这种小球通常为聚甲基丙烯酸甲酯,它可以保证对芯片表面的磨损最小。 展开更多
关键词 银浆 技术 小球 封装 聚甲基丙烯酸甲酯 内存芯片 内存容量 手持设备
在线阅读 下载PDF
SiP:用于评估材料组性能的测试封装结构
8
作者 Michael S.Buckley 《集成电路应用》 2006年第6期32-32,34,35,共3页
本文介绍了用于SiP器件制造的一组材料,该组材料在经过260℃回流后性能仍可达到JEDEC3级标准的规定。
关键词 SIP 封装结构 材料 测试 评估 器件
在线阅读 下载PDF
Fabrication and adhesion of hierarchical micro-seta 被引量:1
9
作者 ZHANG Hao WU LianWei +2 位作者 JIA ShiXing GUO DongJie DAI ZhenDong 《Chinese Science Bulletin》 SCIE CAS 2012年第11期1343-1349,共7页
Spark-erosion perforating technology was used to fabricate a Cu-based template characterized by pores with radius of 0.5 mm inclined at 75°. A commercial silicone elastomer of poly(dimethylsiloxane) (PDMS) with a... Spark-erosion perforating technology was used to fabricate a Cu-based template characterized by pores with radius of 0.5 mm inclined at 75°. A commercial silicone elastomer of poly(dimethylsiloxane) (PDMS) with a rich Si-H content was used to produce an inclined array of primary setae. The technique of argon ion plasma etching on crystalline silicon was used to fabricate negative templates with radii of 5, 10, and 20 μm. The Si-H rich PDMS was used to cast three types of fine array templates, which acted as the secondary setae. A vinyl-rich PDMS precursor was used to bind the primary and secondary setae by a hydrosilylation reaction, thus allowing the formation of three different hierarchical arrangements of setae. Adhesion tests demonstrated that shear adhesion was anisotropic, first increasing in strength then decreasing to a stable level as slippage occurred. The adhesion strength was significantly influenced by the nature of the secondary setae, showing a strong correlation with aspect-ratio and concentration. 展开更多
关键词 刚毛 粘附 制造 聚二甲基硅氧烷 PDMS 粘合强度 硅氢化反应 射孔技术
在线阅读 下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部