Grazing incident X-ray diffraction at different grazing angles for self-organized Ge dots grown on Si(001) are carried out and lattice constant expansions of 1.2?parallel to the surface as compared with the Si lattice...Grazing incident X-ray diffraction at different grazing angles for self-organized Ge dots grown on Si(001) are carried out and lattice constant expansions of 1.2?parallel to the surface as compared with the Si lattice are found within the Ge dots.A 3.1?lattice expansion of the Ge dots along the growth direction is also fund by ordinary X-ray(004) diffraction.According to the Poisson equation and the Vegard law,our results infer that the Ge dot should be a partially strain relaxed SiGe alloy with Ge content of abuot 55?2001 Elsevier Science B.V.All rights reserved.展开更多
文摘Grazing incident X-ray diffraction at different grazing angles for self-organized Ge dots grown on Si(001) are carried out and lattice constant expansions of 1.2?parallel to the surface as compared with the Si lattice are found within the Ge dots.A 3.1?lattice expansion of the Ge dots along the growth direction is also fund by ordinary X-ray(004) diffraction.According to the Poisson equation and the Vegard law,our results infer that the Ge dot should be a partially strain relaxed SiGe alloy with Ge content of abuot 55?2001 Elsevier Science B.V.All rights reserved.
