In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junction...In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside;2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 105 cm-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained;3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.展开更多
Recently, air plasma, produced by focusing an intense laser beam to ionize atoms or molecules, has been demonstrated to be a promising source of broadband terahertz waves. However, simultaneous broadband and coherent ...Recently, air plasma, produced by focusing an intense laser beam to ionize atoms or molecules, has been demonstrated to be a promising source of broadband terahertz waves. However, simultaneous broadband and coherent detection of such broadband terahertz waves is still challenging. Electroptical sampling and photoconductive antennas are the typical approaches for terahertz wave detection. The bandwidth of these detection methods is limited by the phonon resonance or carrier＇s lifetime. Unlike solid-state detectors, gaseous sensors have several unique features, such as no phonon resonance, less dispersion, no Fabry-Perot effect, and a continuous renewable nature. The aim of this article is to review the development of a broadband terahertz time-domain spectrometer, which has both a gaseous emitter and sensor mainly based on author＇s recent investigation. This spectrometer features high efficiency, perceptive sensitivity, broad bandwidth, adequate signal-to-noise ratio, sufficient dynamic range, and controllable polarization. The detection of terahertz waves with ambient air has been realized through a third order nonlinear optical process： detecting the second harmonic photon that is produced by mixing one terahertz photon with two fundamental photons. In this review, a systematic investigation of the mechanism of broadband terahertz wave detection was presented first. The dependence of the detection efficiency on probe pulse energy, bias field strength, gas pressure and third order nonlinear susceptibility of gases were experimentally demonstrated with selected gases. Detailed discussions of phase matching and Gouy phase shift were presented by considering the focused condition of Gaussian beams. Furthermore, the bandwidth dependence on probe pulse duration was also demonstrated. Over 240 times enhancement of dynamic range had been accomplished with n-hexane vapor compared to conventional air sensor. Moreover, with sub-20 fs laser pulses delivered from a hollow fiber pulse compressor, an ultra-broad spectrum covering from 0.3 to 70 THz was also showed. In addition, a balanced detection scheme using a polarization dependent geometry was developed by author to improve signal-to-noise ratio and dynamic range of conventional terahertz air-biased-coherent-detection （ABCD） systems. Utilizing the tensor property of third order nonlinear susceptibility, second harmonic pulses with two orthogonal polarizations was detected by two separated photomultiplier tubes （PMTs）. The differential signal from these two PMTs offers a realistic method to reduce correlated laser fluctuation, which circumvents signal-to-noise ratio and dynamic range of conventional terahertz ABCD systems. A factor of two improvement of signal-to-noise ratio was experimentally demonstrated. This paper also introduces a unique approach to directly produce a broadband elliptically polarized terahertz wave from laser-induced plasma with a pair of double helix electrodes. The theoretical and experimental results demonstrated that velocity mismatch between excitation laser pulses and generated terahertz waves plays a key role in the properties of the elliptically polarized terahertz waves and confirmed that the far-field terahertz emission pattern is associated with a coherent process. The results give insight into the important influence of propagation effects on terahertz wave polarization control and complete the mechanism of terahertz wave generation from laserinduced plasma. This review provides a critical understanding of broadband terahertz time-domain spectroscopy （THz-TDS） and introduces further guidance for scientific applications of terahertz wave gas photonics.展开更多
文摘In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside;2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 105 cm-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained;3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.
文摘Recently, air plasma, produced by focusing an intense laser beam to ionize atoms or molecules, has been demonstrated to be a promising source of broadband terahertz waves. However, simultaneous broadband and coherent detection of such broadband terahertz waves is still challenging. Electroptical sampling and photoconductive antennas are the typical approaches for terahertz wave detection. The bandwidth of these detection methods is limited by the phonon resonance or carrier＇s lifetime. Unlike solid-state detectors, gaseous sensors have several unique features, such as no phonon resonance, less dispersion, no Fabry-Perot effect, and a continuous renewable nature. The aim of this article is to review the development of a broadband terahertz time-domain spectrometer, which has both a gaseous emitter and sensor mainly based on author＇s recent investigation. This spectrometer features high efficiency, perceptive sensitivity, broad bandwidth, adequate signal-to-noise ratio, sufficient dynamic range, and controllable polarization. The detection of terahertz waves with ambient air has been realized through a third order nonlinear optical process： detecting the second harmonic photon that is produced by mixing one terahertz photon with two fundamental photons. In this review, a systematic investigation of the mechanism of broadband terahertz wave detection was presented first. The dependence of the detection efficiency on probe pulse energy, bias field strength, gas pressure and third order nonlinear susceptibility of gases were experimentally demonstrated with selected gases. Detailed discussions of phase matching and Gouy phase shift were presented by considering the focused condition of Gaussian beams. Furthermore, the bandwidth dependence on probe pulse duration was also demonstrated. Over 240 times enhancement of dynamic range had been accomplished with n-hexane vapor compared to conventional air sensor. Moreover, with sub-20 fs laser pulses delivered from a hollow fiber pulse compressor, an ultra-broad spectrum covering from 0.3 to 70 THz was also showed. In addition, a balanced detection scheme using a polarization dependent geometry was developed by author to improve signal-to-noise ratio and dynamic range of conventional terahertz air-biased-coherent-detection （ABCD） systems. Utilizing the tensor property of third order nonlinear susceptibility, second harmonic pulses with two orthogonal polarizations was detected by two separated photomultiplier tubes （PMTs）. The differential signal from these two PMTs offers a realistic method to reduce correlated laser fluctuation, which circumvents signal-to-noise ratio and dynamic range of conventional terahertz ABCD systems. A factor of two improvement of signal-to-noise ratio was experimentally demonstrated. This paper also introduces a unique approach to directly produce a broadband elliptically polarized terahertz wave from laser-induced plasma with a pair of double helix electrodes. The theoretical and experimental results demonstrated that velocity mismatch between excitation laser pulses and generated terahertz waves plays a key role in the properties of the elliptically polarized terahertz waves and confirmed that the far-field terahertz emission pattern is associated with a coherent process. The results give insight into the important influence of propagation effects on terahertz wave polarization control and complete the mechanism of terahertz wave generation from laserinduced plasma. This review provides a critical understanding of broadband terahertz time-domain spectroscopy （THz-TDS） and introduces further guidance for scientific applications of terahertz wave gas photonics.
