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Linewidth Narrowing and Intensity Enhancement of Wavelength Tunable MOLEDs 被引量:1
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作者 LIYong-jun SHIJia-wei 《Semiconductor Photonics and Technology》 CAS 2001年第1期16-17,29,共3页
Microcavity structure consisting of distributed Bragg reflector and metal aluminum mirror is designed. Using tris (8-hydroxyquinoline) aluminum as electron-transport layer and emissive layer, and N, N′-bis (3-methylp... Microcavity structure consisting of distributed Bragg reflector and metal aluminum mirror is designed. Using tris (8-hydroxyquinoline) aluminum as electron-transport layer and emissive layer, and N, N′-bis (3-methylphenyl)-N, N′-diphenylbenzidine as a hole-transport layer, microcavity organic light-emitting diodes(MOLEDs) are fabricated. Compared to the electroluminescence spectra of non-cavity OLEDs, the linewidth of the MOLEDs is compressed from 75 nm to 7 nm, and the peak intensity enhances by a factor of about 3. When the effective length of the microcavity is modified, resonance wavelength can be selectively scanned over a very wide range of wavelengths that cover almost 140 nm. 展开更多
关键词 Organic light-emitting diodes MICROCAVITY ELECTROLUMINESCENCE Distributed Bragg reflector
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Electro-optic Sampling of Proton-bombarded GaP Crystal
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作者 ZHANGDa-ming TIANXiao-jian 《Semiconductor Photonics and Technology》 CAS 2000年第2期77-82,共6页
An electro-optic sampling system utilizing proton-bombarded GaP crystal as probe material has been built. Microwave signals propagating on the indium -tin oxide coplanar waveguide were measured by the system. Measurem... An electro-optic sampling system utilizing proton-bombarded GaP crystal as probe material has been built. Microwave signals propagating on the indium -tin oxide coplanar waveguide were measured by the system. Measurements of bombarded sample gave the resistance value of four orders greater than that of un- bombarded. The electric field shield effect induced by doped GaP was effectively decreased to approximate semi-insulator material. The system has the voltage sensitivity of about 40 mV/21/Hz with the microwave frequency of 1.15 GHz. 展开更多
关键词 Proton bombardment Electro-optic sampling Gain-switched semiconductor laser
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