We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator（SOI） wafers under different Si ion implantation conditions...We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator（SOI） wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61504047the Fujian Provincial Department of Science and Technology under Grant No 2016J05159
文摘We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator（SOI） wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.
