A kind of novel on-board memory acceleration measure equipment, self-developed, had been employed in recent field test to obtain the acceleration of projectile penetrating many kinds of concrete target. At the same ti...A kind of novel on-board memory acceleration measure equipment, self-developed, had been employed in recent field test to obtain the acceleration of projectile penetrating many kinds of concrete target. At the same time, the aluminintan foam with different density and pore-diameters had been utilized to protect circuit moduies. Furthennore, with the theoretical analysis, computer simulation and field test, the high frequency＇s impact on the tested acceleration of the projectile had been discussed; At last, the analysis on output signal tested the validity of test data.展开更多
The lateral super junction （SJ） power devices suffer the substrate-assisted depletion （SAD） effect, which breaks the charge balance of SJ resulting in the low breakdown voltage （BV）. A solution based on enhancin...The lateral super junction （SJ） power devices suffer the substrate-assisted depletion （SAD） effect, which breaks the charge balance of SJ resulting in the low breakdown voltage （BV）. A solution based on enhancing the electric field of the dielectric buried layer is investigated for improving the BV of super junction LDMOSFET （SJ-LDMOS）. High density interface charges enhance the electric field in the buried oxide （BOX） layer to increase the block voltage of BOX, which suppresses the SAD effect to achieve the charge balance of SJ. In order to obtain the linear enhancement of electric field, SO1 SJ-LDMOS with trenched BOX is presented. Because the trenched BOX self-adaptively collects holes according to the variable electric field strength, the approximate linear charge distribution is formed on the surface of the BOX to enhance the electric field according to the need. As a result, the charge balance between N and P pillars of SJ is achieved, which improves the BV of SJ-LDMOS to close that of the idea SJ structure.展开更多
基金supported by the high school science technology R&D programmein Shanxi province
文摘A kind of novel on-board memory acceleration measure equipment, self-developed, had been employed in recent field test to obtain the acceleration of projectile penetrating many kinds of concrete target. At the same time, the aluminintan foam with different density and pore-diameters had been utilized to protect circuit moduies. Furthennore, with the theoretical analysis, computer simulation and field test, the high frequency＇s impact on the tested acceleration of the projectile had been discussed; At last, the analysis on output signal tested the validity of test data.
基金Project supported by the National Natural Science Foundation of China(No.60576052)the Shanxi Youth Science and Technology Research Foundation of China(No.2010021015-3)
文摘The lateral super junction （SJ） power devices suffer the substrate-assisted depletion （SAD） effect, which breaks the charge balance of SJ resulting in the low breakdown voltage （BV）. A solution based on enhancing the electric field of the dielectric buried layer is investigated for improving the BV of super junction LDMOSFET （SJ-LDMOS）. High density interface charges enhance the electric field in the buried oxide （BOX） layer to increase the block voltage of BOX, which suppresses the SAD effect to achieve the charge balance of SJ. In order to obtain the linear enhancement of electric field, SO1 SJ-LDMOS with trenched BOX is presented. Because the trenched BOX self-adaptively collects holes according to the variable electric field strength, the approximate linear charge distribution is formed on the surface of the BOX to enhance the electric field according to the need. As a result, the charge balance between N and P pillars of SJ is achieved, which improves the BV of SJ-LDMOS to close that of the idea SJ structure.
