Correction to:Nano-Micro Letters(2025)17:191 https://doi.org/10.1007/s40820-025-01702-7 Following the publication of the original article[1],the authors reported an error in Fig.3(b),and the figure legend was reversed...Correction to:Nano-Micro Letters(2025)17:191 https://doi.org/10.1007/s40820-025-01702-7 Following the publication of the original article[1],the authors reported an error in Fig.3(b),and the figure legend was reversed.The correct Fig.3 has been provided in this orrection.展开更多
Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of ...Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of nanosheet field-effect transistors(NSFETs)and complementary FET(CFET)continue to rise.The 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems(IRDS)(2022,https://irds.ieee.org/),but not publicly confirmed,indicating that more possibilities still exist.The miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area,power consumption and speed.In this study,a comprehensive framework is built.A set of MoS2 NSFETs were designed and fabricated to extract the key parameters and performances.And then for benchmarking,the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device footprint.Under these conditions,the frequency of ultra-scaled 2D-NSFET is found to improve by 36%at a fixed power consumption.This work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes,i.e.,“2D eq 1 nm”nodes.At the same time,thanks to the lower characteristic length of 2D semiconductors,the miniaturized 2D-NSFET achieves a 28%frequency increase at a fixed power consumption.Further,developing a standard cell library,these devices obtain a similar trend in 16-bit RISC-V CPUs.This work quantifies and highlights the advantages of 2D semiconductors in advanced nodes,offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.展开更多
Carbon materials have taken an important role in supercapacitor applications due to their outstanding features of large surface area,low price,and stable physicochemical properties.Considerable research efforts have b...Carbon materials have taken an important role in supercapacitor applications due to their outstanding features of large surface area,low price,and stable physicochemical properties.Considerable research efforts have been devoted to the development of novel synthesis strategy for the preparation of porous carbon materials in recent years.In particular,molten salt strategy represents an emerging and promising method,whereby it has shown great potential in achieving tailored production of porous carbon.It has been proved that the molten salt-assisted production of carbon via the direct carbonization of carbonaceous precursors is an effective approach.Furthermore,with the incorporation of electrochemical technology,molten salt synthesis of porous carbon has become flexible and diversiform.Here,this review focuses on the mainstream molten salt synthesis strategies for the production of porous carbon materials,which includes direct molten salt carbonization process,capture and electrochemical conversion of CO_(2)to value-added carbon,electrochemical exfoliation of graphite to graphene-based materials,and electrochemical etching of carbides to new-type carbide-derived carbon materials.The reaction mechanisms and recent advances for these strategies are reviewed and discussed systematically.The morphological and structural properties and capacitive performances of the obtained carbon materials are summarized to reveal their appealing points for supercapacitor applications.Moreover,the opportunities and challenges of the molten salt synthesis strategy for the preparation of carbon materials are also discussed in this review to provide inspiration to the future researches.展开更多
The excellent properties of the multi-principal element alloys(e.g.,the CoCrNi medium-entropy alloy)make them a perfect candidate for structure materials.Their low strength and poor wear-resistance,however,limit consi...The excellent properties of the multi-principal element alloys(e.g.,the CoCrNi medium-entropy alloy)make them a perfect candidate for structure materials.Their low strength and poor wear-resistance,however,limit considerably their applications.In this study,a lamellar eutectic microstructure was introduced by addition of Hf into CoCrNi alloy to produce a series of CoCrNiHf_(x)(x=0.1,0.2,0.3 and 0.4)eutectic medium-entropy alloys.A homogeneous eutectic microstructure with an alternate array of the soft FCC solid-solution phase and the hard Laves phase was identified for the as-cast CoCrNiHf_(0.3)alloy.After an investigation of the microstructure,mechanical and tribological properties,it was found that the hardness(plasticity)increases(decreases)with the increasing volume fraction of the Laves phase and the CoCrNiHf_(0.3)eutectic alloy exhibits both good plasticity and high strength.The wear behavior is strongly dependent on the applied normal load.For a low normal load,its tribological behavior follows the Archard's equation and a higher hardness due to Hf addition can resist plastic deformation and abrasive wear.When the normal load is high enough,the hypoeutectic or hypereutectic alloy,which possessing either high strength or good ductility but not at the same time,exhibit a poor wear resistance.In comparison,the full eutectic CoCrNiHf_(0.3)alloy with a superior combination of strength and toughness shows the best wear performance,as it can significantly reduce fracture during wear.展开更多
Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phasetr...Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phasetransition temperature from face-centred-cubic （fcc） phase to hexagonal （hex） phase. The resistivity of the Ge2Sb2Te5 film shows a significant increase with the Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460℃ annealing increases from 1 to 11 mΩ.cm and dynamic resistance increase from 64 to 99Ω compared to the undoped Ge2Sb2Te5 film. This is very helpful to writing current reduction of phase-change random access memory.展开更多
Fermi level pinning at the interface between high-h gate dielectric and GaAs induced by unstable native oxides is a major obstacle for high performance GaAs-based metal-oxide-semiconductor （MOS） devices. We demonstr...Fermi level pinning at the interface between high-h gate dielectric and GaAs induced by unstable native oxides is a major obstacle for high performance GaAs-based metal-oxide-semiconductor （MOS） devices. We demonstrate the improved Al2O3/GaAs interracial characteristics by （NH4）2S immersion and NH3 thermal pretreatment prior to A1203 deposition. X-ray photoelectron spectroscopy （XPS） analysis confirms that sulfuration of GaAs surface by （NH4 ）2S solution can effectively reduce As-O bonds while Ga-O bonds and elemental As still exist at Al2O3 /GaAs interface. However, it is found that N incorporation during the further thermal nitridation on sulfurated GaAs can effectively suppress the native oxides and elemental As in the sequent deposition of Al2O3. Atomic force microscopy （AFM） shows that the further thermal nitridation on sulfurated GaAs surface can also improve the surface roughness.展开更多
The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristi...The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.展开更多
Fluorescein/polyvinyl pyrrolidone （PVP） composite nanofibers with different fluorescein loadings （with a weight concentration of 0-5.0%） are fabricated via electrospinning. Morphologies, structures and photolumine...Fluorescein/polyvinyl pyrrolidone （PVP） composite nanofibers with different fluorescein loadings （with a weight concentration of 0-5.0%） are fabricated via electrospinning. Morphologies, structures and photoluminescent （PL） prop- erties of these straight, helical or wavelike fibers are characterized by scanning electron microscopy （SEM）, fluorescence microscopy and a spectrophotometer. It is found that the maximum emission of the as-spun fluorescein/PVP fibers occurs at 510 nm. The PL intensity of the composite fiber increases with fluorescein concentration, then fluorescence quenching appears when the concentration reaches 1.67%. The mechanism of fluorescence quenching of fiuorescein is discussed. In addition, the composite fibers exhibit a much stronger PL intensity than fluorescein/PVP bulk film owing to larger specific surface area, which makes them promising materials for biomedical applications such as probes and sensors.展开更多
The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive attention thanks to its potential to bridge the large gap between volatile and nonvolatile memory.However...The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive attention thanks to its potential to bridge the large gap between volatile and nonvolatile memory.However,the further extension of the refresh time in quasi-nonvolatile memory is limited by the charge leakage through the p-n junction.Here,based on the density of states engineered van der Waals heterostructures,the leakage of electrons from the floating gate to the channel is greatly suppressed.As a result,the refresh time is effectively extended to more than 100 s,which is the longest among all previously reported quasi-nonvolatile memories.This work provides a new idea to enhance the refresh time of quasi-nonvolatile memory by the density of states engineering and demonstrates great application potential for high-speed and low-power memory technology.展开更多
In this paper, we propose a new form of nanostructures with Al film deposited on a patterned dielectric material for generating structural color, which is induced by local surface plasmonic resonant(LSPR) absorption i...In this paper, we propose a new form of nanostructures with Al film deposited on a patterned dielectric material for generating structural color, which is induced by local surface plasmonic resonant(LSPR) absorption in sub-wavelengthindented hole/ring arrays. Unlike other reported results obtained by using focus ion beam(FIB) to create metallic nanostructures, the nano-sized hole/ring arrays in Al film in this work are replicated by high resolution electron beam lithography(EBL) combined with self-aligned metallization. Clear structural color is observed and systematically studied by numerical simulations as well as optical characterizations. The central color is strongly related to the geometric size, which provides us with good opportunities to dye the colorless Al surface by controlling the hole/ring dimensions(both diameter and radius), and to open up broad applications in display, jewelry decoration, green production of packing papers, security code,and counterfeits prevention.展开更多
We perform a first-principles calculation based on density functional theory to investigate the interface between single layer graphene and metal oxides. Our study reveals that the monolayer graphene becomes semicondu...We perform a first-principles calculation based on density functional theory to investigate the interface between single layer graphene and metal oxides. Our study reveals that the monolayer graphene becomes semiconducting by single crystal SiO2 and Al2O3 contact, with energy gaps to - 0.9 and - 1.8 eV, respectively. We find the gap originates from the breakage of π bond integrity, whose extent is related to the interface atom configuration. We believe that our results highlight a promising direction for the feasibility to apply large scale graphene layers as building blocks in future electronics devices.展开更多
In this paper, two microwave irradiation methods：（i） liquid-phase microwave irradiation（MWI） reduction of graphite oxide suspension dissolved in de-ionized water and N, N-dimethylformamide, respectively, and（ii...In this paper, two microwave irradiation methods：（i） liquid-phase microwave irradiation（MWI） reduction of graphite oxide suspension dissolved in de-ionized water and N, N-dimethylformamide, respectively, and（ii） solid-phase MWI reduction of graphite oxide powder have been successfully carried out to reduce graphite oxide. The reduced graphene oxide products are thoroughly characterized by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectral analysis, Raman spectroscopy, UV-Vis absorption spectral analysis,and four-point probe conductivity measurements. The results show that both methods can efficiently remove the oxygencontaining functional groups attached to the graphite layers, though the solid-phase MWI reduction method can obtain far more efficiently a higher quality-reduced graphene oxide with fewer defects. The I（D）/I（G） ratio of the solid-phase MWI sample is as low as 0.46, which is only half of that of the liquid-phase MWI samples. The electrical conductivity of the reduced graphene oxide by the solid method reaches 747.9 S/m, which is about 25 times higher than that made by the liquid-phase method.展开更多
In this paper we investigate the formations and morphological stabilities of Co-silicide fihns using 1-8-nm thick Co layers sputter-deposited on silicon （100） substrates. These ultrathin Co-silicide films are formed...In this paper we investigate the formations and morphological stabilities of Co-silicide fihns using 1-8-nm thick Co layers sputter-deposited on silicon （100） substrates. These ultrathin Co-silicide films are formed via solid-state reaction of the deposited Co films with Si substrate at annealing temperatures from 450 ℃ to 850 ℃. For a Co layer with a thickness no larger than i nm, epitaxially aligned CoSi2 films readily grow on silicon （100） substrate and exhibit good morphological stabilities up to 600 ℃. For a Co layer thicker than 1 nm, polycrystalline CoSi and CoSi2 films are observed. The critical thickness below which epitaxially aligned CoSi2 film prevails is smaller than the reported critical thickness of the Ni layer for epitaxial alignment of NiSi2 on silicon （100） substrate. The larger lattice mismatch between the CoSi2 film and the silicon substrate is the root cause for the smaller critical thickness of the Co layer.展开更多
High resolution Fresnel zone plates for nanoscale three-dimensional imaging of materials by both soft and hard x-rays are increasingly needed by the broad applications in nanoscience and nanotechnology.When the outmos...High resolution Fresnel zone plates for nanoscale three-dimensional imaging of materials by both soft and hard x-rays are increasingly needed by the broad applications in nanoscience and nanotechnology.When the outmost zone-width is shrinking down to 50 nm or even below,patterning the zone plates with high aspect ratio by electron beam lithography still remains a challenge because of the proximity effect.The uneven charge distribution in the exposed resist is still frequently observed even after standard proximity effect correction(PEC),because of the large variety in the line width.This work develops a new strategy,nicknamed as local proximity effect correction(LPEC),efficiently modifying the deposited energy over the whole zone plate on the top of proximity effect correction.By this way,50 nm zone plates with the aspect ratio from 4:1 up to 15:1 and the duty cycle close to 0.5 have been fabricated.Their imaging capability in soft(1.3 keV)and hard(9 keV)x-ray,respectively,has been demonstrated in Shanghai Synchrotron Radiation Facility(SSRF)with the resolution of 50 nm.The local proximity effect correction developed in this work should also be generally significant for the generation of zone plates with high resolutions beyond 50 nm.展开更多
In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, the Defect and Dopant ab-initio Simulation Package(DASP), which is composed...In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, the Defect and Dopant ab-initio Simulation Package(DASP), which is composed of four modules for calculating:(ⅰ) elemental chemical potentials,(ⅱ) defect(dopant) formation energies and charge-state transition levels,(ⅲ) defect and carrier densities and(ⅳ) carrier dynamics properties of high-density defects. DASP uses the materials genome database for quick determination of competing secondary phases when calculating the elemental chemical potential that stabilizes compound semiconductors. DASP calls the ab-initio software to perform the total energy, structural relaxation and electronic structure calculations of the defect supercells with different charge states, based on which the defect formation energies and charge-state transition levels are calculated. Then DASP can calculate the equilibrium densities of defects and electron and hole carriers as well as the Fermi level in semiconductors under different chemical potential conditions and growth/working temperature. For high-density defects, DASP can calculate the carrier dynamics properties such as the photoluminescence(PL) spectrum and carrier capture cross sections which can interpret the deep level transient spectroscopy(DLTS). Here we will show three application examples of DASP in studying the undoped GaN, C-doped GaN and quasi-one-dimensional SbSeI.展开更多
Single-atom catalysts(SACs)have garnered increasingly growing attention in renewable energy scenarios,especially in electrocatalysis due to their unique high efficiency of atom utilization and flexible electronic stru...Single-atom catalysts(SACs)have garnered increasingly growing attention in renewable energy scenarios,especially in electrocatalysis due to their unique high efficiency of atom utilization and flexible electronic structure adjustability.The intensive efforts towards the rational design and synthesis of SACs with versatile local configurations have significantly accelerated the development of efficient and sustainable electrocatalysts for a wide range of electrochemical applications.As an emergent coordination avenue,intentionally breaking the planar symmetry of SACs by adding ligands in the axial direction of metal single atoms offers a novel approach for the tuning of both geometric and electronic structures,thereby enhancing electrocatalytic performance at active sites.In this review,we briefly outline the burgeoning research topic of axially coordinated SACs and provide a comprehensive summary of the recent advances in their synthetic strategies and electrocatalytic applications.Besides,the challenges and outlooks in this research field have also been emphasized.The present review provides an in-depth and comprehensive understanding of the axial coordination design of SACs,which could bring new perspectives and solutions for fine regulation of the electronic structures of SACs catering to high-performing energy electrocatalysis.展开更多
Porous active core-shell carbon material with excellent synergistic effect has been regarded as a prospective material for supercapacitors.Herein,we report an integrated method for the facile synthesis of carbide-deri...Porous active core-shell carbon material with excellent synergistic effect has been regarded as a prospective material for supercapacitors.Herein,we report an integrated method for the facile synthesis of carbide-derived carbon(CDC)encapsulated with porous N-doped carbon(CDC@NC)towards highperformance supercapacitors.Polydopamine(PDA)as nitrogen and carbon sources was simply coated on SiC nanospheres to form SiC@PDA,which was then directly transformed into CDC@NC via a onestep molten salt electro-etching/in-situ doping process.The synthesized CDC@NC with hierarchically porous structure has a high specific surface area of 1191 m^(2) g^(-1).The CDC core and NC shell are typical amorphous carbon and more ordered N-doped carbon,respectively.Benefitting from its unique dual porous structures,the CDC@NC demonstrates high specific capacitances of 255 and 193 F g^(-1) at 0.5 and20 A g^(-1),respectively.The reaction mechanism of the electro-etching/in-situ doping process has also been investigated through experimental characterizations and theoretical density functional theory calculations.It is suggested that the molten salt electro-etching/in-situ doping strategy is promising for the synthesis of active core-shell porous carbon materials with synergistic properties for supercapacitors without the need for additional doping/activation processes.展开更多
Interdigitated transducers(IDTs)were originally designed as delay lines for radars.Half a century later,they have found new life as actuators for microfluidic systems.By generating strong acoustic fields,they trigger ...Interdigitated transducers(IDTs)were originally designed as delay lines for radars.Half a century later,they have found new life as actuators for microfluidic systems.By generating strong acoustic fields,they trigger nonlinear effects that enable pumping and mixing of fluids,and moving particles without contact.However,the transition from signal processing to actuators comes with a range of challenges concerning power density and spatial resolution that have spurred exciting developments in solid-state acoustics and especially in IDT design.Assuming some familiarity with acoustofluidics,this paper aims to provide a tutorial for IDT design and characterization for the purpose of acoustofluidic actuation.It is targeted at a diverse audience of researchers in various fields,including fluid mechanics,acoustics,and microelectronics.展开更多
The goal of this study is to analyze the statistics of the backscatter signal from bovine cancellous bone using a Nakagami model and to evaluate the feasibility of Nakagami-model parameters for cancellous bone charact...The goal of this study is to analyze the statistics of the backscatter signal from bovine cancellous bone using a Nakagami model and to evaluate the feasibility of Nakagami-model parameters for cancellous bone characterization. Ultrasonic backscatter measurements were performed on 24 bovine cancellous bone specimens in vitro and the backscatter signals were compensated for the frequency-dependent attenuation prior to the envelope detection. The statistics of the backscatter envelope were modeled using the Nakagami distribution. Our results reveal that the backscatter envelope mainly followed pre-Rayleigh distributions, and the deviations of the backscatter envelope from Rayleigh distribution decreased with increasing bone density. The Nakagami shape parameter(i.e., m) was significantly correlated with bone densities(R = 0.78–0.81, p < 0.001) and trabecular microstructures(|R| = 0.46–0.78, p < 0.05). The scale parameter(i.e.,?) and signal-to-noise ratio(SNR) also yielded significant correlations with bone density and structural features. Multiple linear regressions showed that bone volume fraction(BV/TV) was the main predictor of the Nakagami parameters,and microstructure produced significantly independent contribution to the prediction of Nakagami distribution parameters,explaining an additional 10.2% of the variance at most. The in vitro study showed that statistical parameters derived with Nakagami model might be useful for cancellous bone characterization, and statistical analysis has potential for ultrasonic backscatter bone evaluation.展开更多
Polarimetric imaging enhances the ability to distinguish objects from a bright background by detecting their particular polarization status,which offers another degree of freedom in infrared remote sensing.However,to ...Polarimetric imaging enhances the ability to distinguish objects from a bright background by detecting their particular polarization status,which offers another degree of freedom in infrared remote sensing.However,to scale up by monolithically integrating grating-based polarizers onto a focal plane array(FPA)of infrared detectors,fundamental technical obstacles must be overcome,including reductions of the extinction ratio by the misalignment between the polarizer and the detector,grating line width fluctuations,the line edge roughness,etc.This paper reports the authors’latest achievements in overcoming those problems by solving key technical issues regarding the integration of large-scale polarizers onto the chips of FPAs with individual indium gallium arsenide/indium phosphide(In Ga As/In P)sensors as the basic building blocks.Polarimetric and photovoltaic chips with divisions of the focal plane of 540×4 pixels and 320×256 superpixels have been successfully manufactured.Polarimetric imaging with enhanced contrast has been demonstrated.The progress made in this work has opened up a broad avenue toward industrialization of high quality polarimetric imaging in infrared wavelengths.展开更多
基金supported in part by STI 2030-Major Projects under Grant 2022ZD0209200in part by Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund (L233009)+4 种基金in part by National Natural Science Foundation of China under Grant No. 62374099in part by the Tsinghua-Toyota Joint Research Fundin part by the Daikin Tsinghua Union Programin part by Independent Research Program of School of Integrated Circuits,Tsinghua Universitysponsored by CIE-Tencent Robotics X Rhino-Bird Focused Research Program
文摘Correction to:Nano-Micro Letters(2025)17:191 https://doi.org/10.1007/s40820-025-01702-7 Following the publication of the original article[1],the authors reported an error in Fig.3(b),and the figure legend was reversed.The correct Fig.3 has been provided in this orrection.
基金supported in part by STI 2030-Major Projects under Grant 2022ZD0209200in part by Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund(L233009)+4 种基金in part by National Natural Science Foundation of China under Grant No.62374099in part by the Tsinghua-Toyota Joint Research Fundin part by the Daikin Tsinghua Union Programin part by Independent Research Program of School of Integrated Circuits,Tsinghua UniversityThis work was also sponsored by CIE-Tencent Robotics X Rhino-Bird Focused Research Program.
文摘Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of nanosheet field-effect transistors(NSFETs)and complementary FET(CFET)continue to rise.The 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems(IRDS)(2022,https://irds.ieee.org/),but not publicly confirmed,indicating that more possibilities still exist.The miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area,power consumption and speed.In this study,a comprehensive framework is built.A set of MoS2 NSFETs were designed and fabricated to extract the key parameters and performances.And then for benchmarking,the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device footprint.Under these conditions,the frequency of ultra-scaled 2D-NSFET is found to improve by 36%at a fixed power consumption.This work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes,i.e.,“2D eq 1 nm”nodes.At the same time,thanks to the lower characteristic length of 2D semiconductors,the miniaturized 2D-NSFET achieves a 28%frequency increase at a fixed power consumption.Further,developing a standard cell library,these devices obtain a similar trend in 16-bit RISC-V CPUs.This work quantifies and highlights the advantages of 2D semiconductors in advanced nodes,offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.
基金financially supported by the National Natural Science Foundation of China(Nos.5202205451974181+4 种基金5200415)the Shanghai Rising-Star Program(19QA1403600)the Iron and Steel Joint Research Found of National Natural Science Foundation and China Baowu Steel Group Corporation Limited(U1860203)the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher Learning(TP2019041)the CAS Interdisciplinary Innovation Team for financial support。
文摘Carbon materials have taken an important role in supercapacitor applications due to their outstanding features of large surface area,low price,and stable physicochemical properties.Considerable research efforts have been devoted to the development of novel synthesis strategy for the preparation of porous carbon materials in recent years.In particular,molten salt strategy represents an emerging and promising method,whereby it has shown great potential in achieving tailored production of porous carbon.It has been proved that the molten salt-assisted production of carbon via the direct carbonization of carbonaceous precursors is an effective approach.Furthermore,with the incorporation of electrochemical technology,molten salt synthesis of porous carbon has become flexible and diversiform.Here,this review focuses on the mainstream molten salt synthesis strategies for the production of porous carbon materials,which includes direct molten salt carbonization process,capture and electrochemical conversion of CO_(2)to value-added carbon,electrochemical exfoliation of graphite to graphene-based materials,and electrochemical etching of carbides to new-type carbide-derived carbon materials.The reaction mechanisms and recent advances for these strategies are reviewed and discussed systematically.The morphological and structural properties and capacitive performances of the obtained carbon materials are summarized to reveal their appealing points for supercapacitor applications.Moreover,the opportunities and challenges of the molten salt synthesis strategy for the preparation of carbon materials are also discussed in this review to provide inspiration to the future researches.
基金financially supported by the National Natural Science Foundation of China(No.51975474)the Science Fund for Distinguished Young Scholars from Shaanxi Province(No.2018JC007)+1 种基金the Natural Science Basic Research Program from Shaanxi Province(No.2019JQ-020)the Fundamental Research Funds for the Central Universities(No.3102019JC001)。
文摘The excellent properties of the multi-principal element alloys(e.g.,the CoCrNi medium-entropy alloy)make them a perfect candidate for structure materials.Their low strength and poor wear-resistance,however,limit considerably their applications.In this study,a lamellar eutectic microstructure was introduced by addition of Hf into CoCrNi alloy to produce a series of CoCrNiHf_(x)(x=0.1,0.2,0.3 and 0.4)eutectic medium-entropy alloys.A homogeneous eutectic microstructure with an alternate array of the soft FCC solid-solution phase and the hard Laves phase was identified for the as-cast CoCrNiHf_(0.3)alloy.After an investigation of the microstructure,mechanical and tribological properties,it was found that the hardness(plasticity)increases(decreases)with the increasing volume fraction of the Laves phase and the CoCrNiHf_(0.3)eutectic alloy exhibits both good plasticity and high strength.The wear behavior is strongly dependent on the applied normal load.For a low normal load,its tribological behavior follows the Archard's equation and a higher hardness due to Hf addition can resist plastic deformation and abrasive wear.When the normal load is high enough,the hypoeutectic or hypereutectic alloy,which possessing either high strength or good ductility but not at the same time,exhibit a poor wear resistance.In comparison,the full eutectic CoCrNiHf_(0.3)alloy with a superior combination of strength and toughness shows the best wear performance,as it can significantly reduce fracture during wear.
文摘Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phasetransition temperature from face-centred-cubic （fcc） phase to hexagonal （hex） phase. The resistivity of the Ge2Sb2Te5 film shows a significant increase with the Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460℃ annealing increases from 1 to 11 mΩ.cm and dynamic resistance increase from 64 to 99Ω compared to the undoped Ge2Sb2Te5 film. This is very helpful to writing current reduction of phase-change random access memory.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60628403 and 60776017 and by the Science and Technology Committee of Shanghai under Grant No. 071111007.
文摘Fermi level pinning at the interface between high-h gate dielectric and GaAs induced by unstable native oxides is a major obstacle for high performance GaAs-based metal-oxide-semiconductor （MOS） devices. We demonstrate the improved Al2O3/GaAs interracial characteristics by （NH4）2S immersion and NH3 thermal pretreatment prior to A1203 deposition. X-ray photoelectron spectroscopy （XPS） analysis confirms that sulfuration of GaAs surface by （NH4 ）2S solution can effectively reduce As-O bonds while Ga-O bonds and elemental As still exist at Al2O3 /GaAs interface. However, it is found that N incorporation during the further thermal nitridation on sulfurated GaAs can effectively suppress the native oxides and elemental As in the sequent deposition of Al2O3. Atomic force microscopy （AFM） shows that the further thermal nitridation on sulfurated GaAs surface can also improve the surface roughness.
文摘The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.11074138,11004114,60906054, and50825206)the Shandong Provincial Natural Science Foundation for Distinguished Young Scholars,China (Grant No. JQ201103)+2 种基金the Taishan Scholars Program of Shandong Province, Chinathe National Basic Research Program of China (Grant No. 2012CB722705)the National High Technology Research and Development Program of China (Grant No. 2011AA100706)
文摘Fluorescein/polyvinyl pyrrolidone （PVP） composite nanofibers with different fluorescein loadings （with a weight concentration of 0-5.0%） are fabricated via electrospinning. Morphologies, structures and photoluminescent （PL） prop- erties of these straight, helical or wavelike fibers are characterized by scanning electron microscopy （SEM）, fluorescence microscopy and a spectrophotometer. It is found that the maximum emission of the as-spun fluorescein/PVP fibers occurs at 510 nm. The PL intensity of the composite fiber increases with fluorescein concentration, then fluorescence quenching appears when the concentration reaches 1.67%. The mechanism of fluorescence quenching of fiuorescein is discussed. In addition, the composite fibers exhibit a much stronger PL intensity than fluorescein/PVP bulk film owing to larger specific surface area, which makes them promising materials for biomedical applications such as probes and sensors.
基金This work was supported by the National Natural Science Foundation of China(61925402,61851402 and 61734003)Science and Technology Commission of Shanghai Municipality(19JC1416600)+2 种基金National Key Research and Development Program(2017YFB0405600)Shanghai Education Development Foundation and Shanghai Municipal Education Commission Shuguang Program(18SG01)China Postdoctoral Science Foundation(2019M661358,2019TQ0065).
文摘The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive attention thanks to its potential to bridge the large gap between volatile and nonvolatile memory.However,the further extension of the refresh time in quasi-nonvolatile memory is limited by the charge leakage through the p-n junction.Here,based on the density of states engineered van der Waals heterostructures,the leakage of electrons from the floating gate to the channel is greatly suppressed.As a result,the refresh time is effectively extended to more than 100 s,which is the longest among all previously reported quasi-nonvolatile memories.This work provides a new idea to enhance the refresh time of quasi-nonvolatile memory by the density of states engineering and demonstrates great application potential for high-speed and low-power memory technology.
基金partially supported by the National Natural Science Foundation of China(Grant No.61205148)
文摘In this paper, we propose a new form of nanostructures with Al film deposited on a patterned dielectric material for generating structural color, which is induced by local surface plasmonic resonant(LSPR) absorption in sub-wavelengthindented hole/ring arrays. Unlike other reported results obtained by using focus ion beam(FIB) to create metallic nanostructures, the nano-sized hole/ring arrays in Al film in this work are replicated by high resolution electron beam lithography(EBL) combined with self-aligned metallization. Clear structural color is observed and systematically studied by numerical simulations as well as optical characterizations. The central color is strongly related to the geometric size, which provides us with good opportunities to dye the colorless Al surface by controlling the hole/ring dimensions(both diameter and radius), and to open up broad applications in display, jewelry decoration, green production of packing papers, security code,and counterfeits prevention.
基金Supported by the National Natural Science Foundation of China （60776017）, the State Key Projects （2009ZX02039-003, 2009ZX02022-002, 2009ZX02035-005）, and the Fund of State Key Laboratory of ASIC and System （09MS004）. We acknowledge Professor Xingao Gong for help in the calculation.
文摘We perform a first-principles calculation based on density functional theory to investigate the interface between single layer graphene and metal oxides. Our study reveals that the monolayer graphene becomes semiconducting by single crystal SiO2 and Al2O3 contact, with energy gaps to - 0.9 and - 1.8 eV, respectively. We find the gap originates from the breakage of π bond integrity, whose extent is related to the interface atom configuration. We believe that our results highlight a promising direction for the feasibility to apply large scale graphene layers as building blocks in future electronics devices.
基金Project supported by the National Natural Science Foundation of China(Grant No.61176090)the National Science and Technology Project 02,China(Grant No.2013ZX02303-004)
文摘In this paper, two microwave irradiation methods：（i） liquid-phase microwave irradiation（MWI） reduction of graphite oxide suspension dissolved in de-ionized water and N, N-dimethylformamide, respectively, and（ii） solid-phase MWI reduction of graphite oxide powder have been successfully carried out to reduce graphite oxide. The reduced graphene oxide products are thoroughly characterized by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectral analysis, Raman spectroscopy, UV-Vis absorption spectral analysis,and four-point probe conductivity measurements. The results show that both methods can efficiently remove the oxygencontaining functional groups attached to the graphite layers, though the solid-phase MWI reduction method can obtain far more efficiently a higher quality-reduced graphene oxide with fewer defects. The I（D）/I（G） ratio of the solid-phase MWI sample is as low as 0.46, which is only half of that of the liquid-phase MWI samples. The electrical conductivity of the reduced graphene oxide by the solid method reaches 747.9 S/m, which is about 25 times higher than that made by the liquid-phase method.
基金Project supported by the "China National Science and Technology Major Project 02" (Grant No. 2009ZX02035-003)the National Natural Science Foundation of China (Grant No. 61176090)the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
文摘In this paper we investigate the formations and morphological stabilities of Co-silicide fihns using 1-8-nm thick Co layers sputter-deposited on silicon （100） substrates. These ultrathin Co-silicide films are formed via solid-state reaction of the deposited Co films with Si substrate at annealing temperatures from 450 ℃ to 850 ℃. For a Co layer with a thickness no larger than i nm, epitaxially aligned CoSi2 films readily grow on silicon （100） substrate and exhibit good morphological stabilities up to 600 ℃. For a Co layer thicker than 1 nm, polycrystalline CoSi and CoSi2 films are observed. The critical thickness below which epitaxially aligned CoSi2 film prevails is smaller than the reported critical thickness of the Ni layer for epitaxial alignment of NiSi2 on silicon （100） substrate. The larger lattice mismatch between the CoSi2 film and the silicon substrate is the root cause for the smaller critical thickness of the Co layer.
基金Project supported by the National Natural Science Foundation of China(Grant No.U1732104)China Postdoctoral Science Foundation(Grant No.2017M611443)Shanghai STCSM2019-11-20 Grant,China(Grant No.19142202700)。
文摘High resolution Fresnel zone plates for nanoscale three-dimensional imaging of materials by both soft and hard x-rays are increasingly needed by the broad applications in nanoscience and nanotechnology.When the outmost zone-width is shrinking down to 50 nm or even below,patterning the zone plates with high aspect ratio by electron beam lithography still remains a challenge because of the proximity effect.The uneven charge distribution in the exposed resist is still frequently observed even after standard proximity effect correction(PEC),because of the large variety in the line width.This work develops a new strategy,nicknamed as local proximity effect correction(LPEC),efficiently modifying the deposited energy over the whole zone plate on the top of proximity effect correction.By this way,50 nm zone plates with the aspect ratio from 4:1 up to 15:1 and the duty cycle close to 0.5 have been fabricated.Their imaging capability in soft(1.3 keV)and hard(9 keV)x-ray,respectively,has been demonstrated in Shanghai Synchrotron Radiation Facility(SSRF)with the resolution of 50 nm.The local proximity effect correction developed in this work should also be generally significant for the generation of zone plates with high resolutions beyond 50 nm.
基金supported by the joint project between Hongzhiwei Technology (Shanghai) Co., Ltd. and Fudan University。
文摘In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, the Defect and Dopant ab-initio Simulation Package(DASP), which is composed of four modules for calculating:(ⅰ) elemental chemical potentials,(ⅱ) defect(dopant) formation energies and charge-state transition levels,(ⅲ) defect and carrier densities and(ⅳ) carrier dynamics properties of high-density defects. DASP uses the materials genome database for quick determination of competing secondary phases when calculating the elemental chemical potential that stabilizes compound semiconductors. DASP calls the ab-initio software to perform the total energy, structural relaxation and electronic structure calculations of the defect supercells with different charge states, based on which the defect formation energies and charge-state transition levels are calculated. Then DASP can calculate the equilibrium densities of defects and electron and hole carriers as well as the Fermi level in semiconductors under different chemical potential conditions and growth/working temperature. For high-density defects, DASP can calculate the carrier dynamics properties such as the photoluminescence(PL) spectrum and carrier capture cross sections which can interpret the deep level transient spectroscopy(DLTS). Here we will show three application examples of DASP in studying the undoped GaN, C-doped GaN and quasi-one-dimensional SbSeI.
基金The authors acknowledge financial support from the National Key R&D Program of China(2022YFA1505700)National Natural Science Foundation of China(22205232,51971157 and 21601187)Shenzhen Science and Technology Program(JCYJ20210324115412035 and ZDSYS20210813095534001).
文摘Single-atom catalysts(SACs)have garnered increasingly growing attention in renewable energy scenarios,especially in electrocatalysis due to their unique high efficiency of atom utilization and flexible electronic structure adjustability.The intensive efforts towards the rational design and synthesis of SACs with versatile local configurations have significantly accelerated the development of efficient and sustainable electrocatalysts for a wide range of electrochemical applications.As an emergent coordination avenue,intentionally breaking the planar symmetry of SACs by adding ligands in the axial direction of metal single atoms offers a novel approach for the tuning of both geometric and electronic structures,thereby enhancing electrocatalytic performance at active sites.In this review,we briefly outline the burgeoning research topic of axially coordinated SACs and provide a comprehensive summary of the recent advances in their synthetic strategies and electrocatalytic applications.Besides,the challenges and outlooks in this research field have also been emphasized.The present review provides an in-depth and comprehensive understanding of the axial coordination design of SACs,which could bring new perspectives and solutions for fine regulation of the electronic structures of SACs catering to high-performing energy electrocatalysis.
基金sponsored by the National Natural Science Foundation of China(5197418151574164)+5 种基金the Iron and Steel Joint Research Found of National Natural Science Foundation and China Baowu Steel Group Corporation Limited(U1860203)the Shanghai Rising-Star Program(19QA1403600)China Postdoctoral Science Foundation(2019M661462)the Shanghai Postdoctoral Excellence Program(2018079)the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher learning(TP2019041)the CAS Interdisciplinary Innovation Team and High Performance Computing Center,Shanghai University for financial support。
文摘Porous active core-shell carbon material with excellent synergistic effect has been regarded as a prospective material for supercapacitors.Herein,we report an integrated method for the facile synthesis of carbide-derived carbon(CDC)encapsulated with porous N-doped carbon(CDC@NC)towards highperformance supercapacitors.Polydopamine(PDA)as nitrogen and carbon sources was simply coated on SiC nanospheres to form SiC@PDA,which was then directly transformed into CDC@NC via a onestep molten salt electro-etching/in-situ doping process.The synthesized CDC@NC with hierarchically porous structure has a high specific surface area of 1191 m^(2) g^(-1).The CDC core and NC shell are typical amorphous carbon and more ordered N-doped carbon,respectively.Benefitting from its unique dual porous structures,the CDC@NC demonstrates high specific capacitances of 255 and 193 F g^(-1) at 0.5 and20 A g^(-1),respectively.The reaction mechanism of the electro-etching/in-situ doping process has also been investigated through experimental characterizations and theoretical density functional theory calculations.It is suggested that the molten salt electro-etching/in-situ doping strategy is promising for the synthesis of active core-shell porous carbon materials with synergistic properties for supercapacitors without the need for additional doping/activation processes.
基金This work was supported by the National Natural Science Foundation of China under Grant Nos.12004078 and 61874033the State Key Lab of ASIC and Systems,the Science and Technology Commission of Shanghai Municipality Award/Grant Nos.22QA1400900 and 22WZ2502200Fudan University 2021MS001,2021MS002 and 2020KF006.
文摘Interdigitated transducers(IDTs)were originally designed as delay lines for radars.Half a century later,they have found new life as actuators for microfluidic systems.By generating strong acoustic fields,they trigger nonlinear effects that enable pumping and mixing of fluids,and moving particles without contact.However,the transition from signal processing to actuators comes with a range of challenges concerning power density and spatial resolution that have spurred exciting developments in solid-state acoustics and especially in IDT design.Assuming some familiarity with acoustofluidics,this paper aims to provide a tutorial for IDT design and characterization for the purpose of acoustofluidic actuation.It is targeted at a diverse audience of researchers in various fields,including fluid mechanics,acoustics,and microelectronics.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11874289,11827808,11504057,11525416,and 81601504)the Fundamental Research Funds for the Central Universities
文摘The goal of this study is to analyze the statistics of the backscatter signal from bovine cancellous bone using a Nakagami model and to evaluate the feasibility of Nakagami-model parameters for cancellous bone characterization. Ultrasonic backscatter measurements were performed on 24 bovine cancellous bone specimens in vitro and the backscatter signals were compensated for the frequency-dependent attenuation prior to the envelope detection. The statistics of the backscatter envelope were modeled using the Nakagami distribution. Our results reveal that the backscatter envelope mainly followed pre-Rayleigh distributions, and the deviations of the backscatter envelope from Rayleigh distribution decreased with increasing bone density. The Nakagami shape parameter(i.e., m) was significantly correlated with bone densities(R = 0.78–0.81, p < 0.001) and trabecular microstructures(|R| = 0.46–0.78, p < 0.05). The scale parameter(i.e.,?) and signal-to-noise ratio(SNR) also yielded significant correlations with bone density and structural features. Multiple linear regressions showed that bone volume fraction(BV/TV) was the main predictor of the Nakagami parameters,and microstructure produced significantly independent contribution to the prediction of Nakagami distribution parameters,explaining an additional 10.2% of the variance at most. The in vitro study showed that statistical parameters derived with Nakagami model might be useful for cancellous bone characterization, and statistical analysis has potential for ultrasonic backscatter bone evaluation.
基金financially supported by the following projects:Open project of SITP(Project Number:IIMDKFJJ-18-09)National Natural Science Foundation of China(Project Number:61927820)+2 种基金The STCSM2019-11-20 funding(Project Number:19142202700)National Natural Science Foundation of China(Project Number:NSF No.U1732104)Zhejiang Lab’s International Talent Fund for Young Professionals。
文摘Polarimetric imaging enhances the ability to distinguish objects from a bright background by detecting their particular polarization status,which offers another degree of freedom in infrared remote sensing.However,to scale up by monolithically integrating grating-based polarizers onto a focal plane array(FPA)of infrared detectors,fundamental technical obstacles must be overcome,including reductions of the extinction ratio by the misalignment between the polarizer and the detector,grating line width fluctuations,the line edge roughness,etc.This paper reports the authors’latest achievements in overcoming those problems by solving key technical issues regarding the integration of large-scale polarizers onto the chips of FPAs with individual indium gallium arsenide/indium phosphide(In Ga As/In P)sensors as the basic building blocks.Polarimetric and photovoltaic chips with divisions of the focal plane of 540×4 pixels and 320×256 superpixels have been successfully manufactured.Polarimetric imaging with enhanced contrast has been demonstrated.The progress made in this work has opened up a broad avenue toward industrialization of high quality polarimetric imaging in infrared wavelengths.
