To address the increasing demand for massive data storage and processing,brain-inspired neuromorphic comput-ing systems based on artificial synaptic devices have been actively developed in recent years.Among the vario...To address the increasing demand for massive data storage and processing,brain-inspired neuromorphic comput-ing systems based on artificial synaptic devices have been actively developed in recent years.Among the various materials inves-tigated for the fabrication of synaptic devices,silicon carbide(SiC)has emerged as a preferred choices due to its high electron mobility,superior thermal conductivity,and excellent thermal stability,which exhibits promising potential for neuromorphic applications in harsh environments.In this review,the recent progress in SiC-based synaptic devices is summarized.Firstly,an in-depth discussion is conducted regarding the categories,working mechanisms,and structural designs of these devices.Subse-quently,several application scenarios for SiC-based synaptic devices are presented.Finally,a few perspectives and directions for their future development are outlined.展开更多
Nowadays,a stack of heavily doped polysilicon(poly-Si)and tunnel oxide(SiO_(x))is widely employed to improve the passivation performance in n-type tunnel oxide passivated contact(TOPCon)silicon solar cells.In this cas...Nowadays,a stack of heavily doped polysilicon(poly-Si)and tunnel oxide(SiO_(x))is widely employed to improve the passivation performance in n-type tunnel oxide passivated contact(TOPCon)silicon solar cells.In this case,it is critical to develop an in-line advanced fabrication process capable of producing high-quality tunnel SiO_(x).Herein,an in-line ozone-gas oxidation(OGO)process to prepare the tunnel SiO_(x) is proposed to be applied in n-type TOPCon solar cell fabrication,which has obtained better performance compared with previously reported in-line plasma-assisted N2O oxidation(PANO)process.In order to explore the underlying mechanism,the electrical properties of the OGO and PANO tunnel SiO_(x) are analyzed by deep-level transient spectroscopy technology.Notably,continuous interface states in the band gap are detected for OGO tunnel SiO_(x),with the interface state densities(D_(it))of 1.2×10^(12)–3.6×10^(12) cm^(-2) eV^(-1) distributed in Ev+(0.15–0.40)eV,which is significantly lower than PANO tunnel SiO_(x).Furthermore,X-ray photoelectron spectroscopy analysis indicate that the percentage of SiO_(2)(Si^(4+))in OGO tunnel SiO_(x) is higher than which in PANO tunnel SiO_(x).Therefore,we ascribe the lower D_(it) to the good inhibitory effects on the formation of low-valent silicon oxides during the OGO process.In a nutshell,OGO tunnel SiO_(x) has a great potential to be applied in n-type TOPCon silicon solar cell,which may be available for global photovoltaics industry.展开更多
Elimination of phosphorus vaporizing from silicon was investigated. Si-P alloy made from electronic grade silicon was used. All the samples were analyzed by GD-MS. Theory calculation determines that phosphorus evapora...Elimination of phosphorus vaporizing from silicon was investigated. Si-P alloy made from electronic grade silicon was used. All the samples were analyzed by GD-MS. Theory calculation determines that phosphorus evaporates from molten silicon as gas species P and P2 at a finite reduced pressure. The experimental results show that phosphorus mass fraction can be decreased from 0.046% （460ppmw） to around 0.001% （10ppmw） under the condition of temperature 1 873 K, chamber pressure 0.6-0.8 Pa, holding time 1 h. Both experimental data and calculation results agree that at high phosphorus concentration, phosphorus removal is quite dependent on high chamber pressure while it becomes independent on low chamber pressure. The reason is that phosphorus evaporates from molten silicon as gas species P2 at a relatively high phosphorus concentration, while gas species P will be dominated in its vapour at low phosphorus content.展开更多
In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon. Boron-doped silicon nanoparticles are synthesized by a plasma approach. They are then dispersed in solvents to form silicon...In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon. Boron-doped silicon nanoparticles are synthesized by a plasma approach. They are then dispersed in solvents to form silicon paste. Silicon paste is screen-printed at the surface of silicon wafers. By annealing, boron atoms in silicon paste diffuse into silicon wafers. Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles. The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy （SIMS） and sheet resistance measurements.展开更多
Perovskite/Silicon tandem solar cells have attracted increasing attention in photovoltaic fields.However,expensive electrode materials and complex manufacturing procedures of top semitransparent perovskite solar cells...Perovskite/Silicon tandem solar cells have attracted increasing attention in photovoltaic fields.However,expensive electrode materials and complex manufacturing procedures of top semitransparent perovskite solar cells(PSCs)and conventional bottom silicon(Si)solar cells are incompatible with economical pro-duction.Single-walled carbon nanotube(SWCNT)films have been regarded as promising transparent elec-trodes because of their hydrophobic nature,earth-abundant carbon sources,mechanical robustness,and good chemical stability.Herein,we report a new and simple four-terminal tandem device with the in-tegration of SWCNT-based semitransparent PSCs and SWCNT-Si heterojunction solar cells.The employed SWCNT film is composed of high-crystallinity and small-bundled nanotubes with excellent optical trans-mittance and electric conductivity.It was adopted as the top electrode to realize semitransparent PSCs,which deliver a power conversion efficiency(PCE)of 12.02%,and the value can be further enhanced to 17.2%by introducing Spiro-OMeTAD into the SWCNT network.Interestingly,this semitransparent PSC has a bifacial feature and exhibits a bifaciality factor value of 91.1%.Moreover,the SWCNT film was trans-ferred onto the surface of a Si wafer at room temperature to achieve the SWCNT-Si device with a PCE of 16.2%.Eventually,by integrating these two solar cells,a perovskite/SWCNT-Si tandem device with an efficiency of over 22%was obtained.展开更多
Nanostructures of silicon are gradually becoming hot candidate due to outstanding capability for trapping light and improving conversion efficiency of solar cell. In this paper, silicon nanowires（SiNWs） and silicon ...Nanostructures of silicon are gradually becoming hot candidate due to outstanding capability for trapping light and improving conversion efficiency of solar cell. In this paper, silicon nanowires（SiNWs） and silicon inverted pyramid arrays（SiIPs） were introduced on surface of Gr-Si solar cell through silver and copper-catalyzed chemical etching, respectively. The effects of SiNWs and SiIPs on carrier lifetime, optical properties and efficiency of Gr-SiNWs and Gr-SiIPs solar cells were systematically analyzed. The results show that the inverted pyramid arrays have more excellent ability for balancing antireflectance loss and surface area enlargement. The power conversion efficiency（PCE） and carrier lifetime of Gr-SiIPs devices respectively increase by 62% and 34% by comparing with that of Gr-SiNWs solar cells. Finally, the Gr-SiIPs cell with PCE of 5.63% was successfully achieved through nitric acid doping. This work proposes a new strategy to introduce the inverted pyramid arrays for improving the performance of Gr-Si solar cells.展开更多
Naturally oxidized freestanding silicon nanocrystals （Si NCs） are incorporated in commonly used encapsulating materials to explore the photoluminescent application of Si NCs in device structures such as solid-state ...Naturally oxidized freestanding silicon nanocrystals （Si NCs） are incorporated in commonly used encapsulating materials to explore the photoluminescent application of Si NCs in device structures such as solid-state lighting light-emitting diodes （LEDs） and solar cells. The quantum yield of Si NCs before the incorporation has reached about 45% at the excitation wavelength of 370 nm without any special surface modification. It is found that medium Ioadings, e.g., 5 wt% of Si NCs in encapsulating materials help to obtain high external quantum efficiency （EQE） of the mixtures of Si NCs and encapsulating materials. The curing of encapsulating materials significantly reduces EQE. Among all the encapsulating materials investigated in this work, silicone- OE6551 enables the highest EQE （21% at excitation wavelength λex = 370 nm） after curing. Based on current findings, we have discussed the continuous efforts to advance the photoluminescent application of Si NCs.展开更多
The product quality of graiworiented silicon steel may be affected by each process because of its complicat- ed production technology. Morphologies, compositions and structures of forsterite film formed in different c...The product quality of graiworiented silicon steel may be affected by each process because of its complicat- ed production technology. Morphologies, compositions and structures of forsterite film formed in different conditions on the samples subjected to high temperature annealing were measured by using a scanning electron microscope, an energy disperse spectroscope, an X ray diffractometer and Fourier transform infrared technique respectively. The morphologies and influential factors of forsterite film were investigated. The results showed that the major compo- nent of forsterite film composed of light-gray spherical particles was Mg2 SiO4, and the minor was MgAl2O4. If the amount of MgO coated on the surface of the steel was less, bare holes or even large-scale bare grains for forsterite film appeared. The higher temperature of water bath during decarburization annealing led to gaps of strips in forster ite film. Moreover, MgO coating method had great influence on forsterite film. Roller coating method was beneficial to increase compactness and smoothness of forsterite film, but was disadvantageous to its thickness.展开更多
The interactions of Sn and S and their effects on the magnetic properties of non-oriented silicon steel sheets were discussed in reference to industrial production. Results show that minor amounts of Sn can improve ma...The interactions of Sn and S and their effects on the magnetic properties of non-oriented silicon steel sheets were discussed in reference to industrial production. Results show that minor amounts of Sn can improve magnetic induction sharply but have little effect on core loss when the S content is below 10 × 10 ^-4%. The precipitation of AlN can be restrained effectively by Sn. Sn, as the nucleus, can remove some of the inclusions with a size of 0.5μm or larger, but has little effect on inclusions smaller than 0.5 μm,which is the key factor affecting core loss. Sn improves the magnetic induction of finished steel sheets mainly through the change of the steel texture. The relationship between the magnetic induction and Sn and S content can be regressed as B50 = 1.69 -4.37 ws ＋0.30 Ws,. From the regression formulation,the magnetic induction can be improved by 0.03 T when 0.01% Sn is added under relatively low S content conditions.展开更多
Boron removal from metallurgical-grade silicon(MG-Si) using CaO–SiO2 slag was studied by employing a medium-frequency electromagnetic induction furnace.The relationship between the optical basicity(K)of the CaO–SiO2...Boron removal from metallurgical-grade silicon(MG-Si) using CaO–SiO2 slag was studied by employing a medium-frequency electromagnetic induction furnace.The relationship between the optical basicity(K)of the CaO–SiO2 slag and the distribution coefficient of boron(LB) was investigated.Consequently, the local minimum and maximum LBvalues of 0.72 and 1.58 are obtained when K = 0.56 and K = 0.71, respectively.The boron content in MG-Si decreases gradually with refinement time increasing, down to a minimum value of4.73 9 10-6.The controlling step in the removal of boron from MG-Si is not the chemical reaction at the interface of the slag and silicon.Instead, the controlling step is a diffusion mass transfer, in which boron impurities diffuse from molten silicon to the interface of the slag and silicon,or B2O3 formed by the chemical reaction diffuses from the slag–silicon interface to molten slag.展开更多
Based on the industrial production of non-oriented silicon steel,calcium treatment by CaSi wire feeding during the RH refining process was studied. The thermodynamics of CaS inclusion formation was analyzed, and the m...Based on the industrial production of non-oriented silicon steel,calcium treatment by CaSi wire feeding during the RH refining process was studied. The thermodynamics of CaS inclusion formation was analyzed, and the morphology and the size distribution were observed. Furthermore, the change in inclusion characteristics after calcium treatment and the effect of calcium treatment on magnetic properties were discussed. The results show that the formation of MnS and A1N inclusions were restrained, and the aggregating, floating and removing of microinclusions after calcium treatment were effectively promoted. The cleanliness of liquid steel was obviously increased. The main type of inclusions was single phase of CaO, with some complex inclusions composed of CaO, SiO2 and MgO. No CaS inclusion was observed after an appropriate calcium treatment. The size of all inclusions was distributed in the range of 2 - 20 μm, and the number was about 1.8 × 10^5/mm3. In addition, as an increasing amount of calcium was added,the core loss gradually decreased to a stable level, and the magnetic induction decreased quickly after a slow increase. The optimal calcium treatment mode depends on the chemical composition of steel.展开更多
High-performance neuromorphic computing(i.e.,brain-like computing)is envisioned to seriously demand optoelectronically integrated artificial neural networks(ANNs)in the future.Optoelectronic synaptic devices are criti...High-performance neuromorphic computing(i.e.,brain-like computing)is envisioned to seriously demand optoelectronically integrated artificial neural networks(ANNs)in the future.Optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs.For the large-scale deployment of high-performance neuromorphic computing in the future,it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon(Si)technologies.This calls for the development of Si-based optoelectronic synaptic devices.In this work we review the use of Si materials to make optoelectronic synaptic devices,which have either two-terminal or three-terminal structures.A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices.We also present the outlook of using Si materials for optoelectronic synaptic devices.展开更多
High energy synchrotron diffraction offers great potential to study the recrystallization kinetics of metallic materials. To study the formation of Goss texture （{ [10}（001）） of grain oriented （GO） silicon steel...High energy synchrotron diffraction offers great potential to study the recrystallization kinetics of metallic materials. To study the formation of Goss texture （{ [10}（001）） of grain oriented （GO） silicon steel during secondary recrystallization process, an in situ experiment using hi gh energy X-ray diffraction was designed. The results showed that the secondary recrystallization began when the heating temperature was 1,494 K, and the grains grew rapidly above this temperature. With an increase in annealing temperature, the large grains with 7 orientation [〈111〉//normal direction] formed and gradually occupied the dominant position. As the annealing temperature increased even further, the grains with Goss orientation to a very large size by devouring the 7 orientation grains that formed in the early annealing stage. A single crystal with a Goss orientation was observed in the GO silicon steel when the annealing temperature was 1,540 K.展开更多
By indentation at room temperature followed by annealing at high temperatures, the pinning effect of germanium on dislocations in germanium-doped Czochralski silicon was investigated. Experimental results show that th...By indentation at room temperature followed by annealing at high temperatures, the pinning effect of germanium on dislocations in germanium-doped Czochralski silicon was investigated. Experimental results show that the dislocations in germanium-doped Czochralski silicon move shorter and slower than those in Czochralski silicon undoping with germanium when the concentration of germanium is over 1×1018 cm-3. The retarding velocity of dislocations is contributed to the dislocations pinning effect of the strain field introduced by the high concentration germanium, and the Ge4B cluster and the oxygen precipitation those are preferred to form at higher concentration germanium.展开更多
The removal of boron impurity from metallurgical-grade silicon for solar cell application in slag system of CaO-SiO_2 is investigated.The experiments are conducted in an electromagnetic induction furnace which is used...The removal of boron impurity from metallurgical-grade silicon for solar cell application in slag system of CaO-SiO_2 is investigated.The experiments are conducted in an electromagnetic induction furnace which is used to heat. The distribution coefficient of boron(L_B)between slag and silicon phase is particularly examined in terms of the optical basicity of slag.With the increase of optical basicity,L_B increases to a local maximum value of 1.58 when the optical basicity is 0.71 after getting to the minimum value of 0.72 when the optical basicity is 0.56.In that above optical basicity of 0.71,L_B decrease sharply which indicates that increasing the basicity of slag is not always effective in boron removal from silicon.展开更多
In the framework of density functional theory （DFT）, we have studied the electronic properties of alkene/alkyne- hydrosilylated silicon nanocrystals （Si NCs） in the size range from 0.8 nm to 1.6 nm. Among the alke...In the framework of density functional theory （DFT）, we have studied the electronic properties of alkene/alkyne- hydrosilylated silicon nanocrystals （Si NCs） in the size range from 0.8 nm to 1.6 nm. Among the alkenes with all kinds of functional groups considered in this work, only those containing -NH2 and -C4H3S lead to significant hydrosilylation- induced changes in the gap between the highest occupied molecular orbital （HOMO） and the lowest unoccupied molecular orbital （LUMO） of an Si NC at the ground state. The quantum confinement effect is dominant for all of the alkene- hydrosilylated Si NCs at the ground state. At the excited state, the prevailing effect of surface chemistry only occurs at the smallest （0.8 nm） Si NCs hydrosilylated with alkenes containing -NH2 and -C4H3S. Although the alkyne hydrosilylation gives rise to a more significant surface chemistry effect than alkene hydrosilylation, the quantum confinement effect remains dominant for alkyne-hydrosilylated Si NCs at the ground state. However, at the excited state, the effect of surface chemistry induced by the hydrosilylation with conjugated alkynes is strong enough to prevail over that of quantum confinement.展开更多
Based on the industrial production of non-oriented silicon steel, the rare earth （RE） treatment during the Ruhrstahl Heraeus （RH） refining process was studied. The morphology and the size distribution were observe...Based on the industrial production of non-oriented silicon steel, the rare earth （RE） treatment during the Ruhrstahl Heraeus （RH） refining process was studied. The morphology and the size distribution were observed for the steel specimens treated with different RE treatment conditions. Furthermore, the formation and change of the nonmetallic inclusion characteristics of finished steel sheets after the RE treatment were discussed. The results have shown that in the present work,the suitable RE metal additions are 0.6 -0.9 kg/t steel. After the suitable RE treatment,the formation of AIN and MnS inclusions were restrained, and the aggregation, flotation and removal of nonmetallic inclusions were efficiently promoted and the cleanliness of liquid steel was significantly increased. Meanwhile, the total oxygen concentration reached the minimum value and thle desulfurization efficiency was optimal ,and the type of main inclusions was approximately spherical or elliptical spherical RE radicle inclusions whose size was relatively large.展开更多
The development, production and application of top high-grade non-grain-oriented （NGO） silicon steels at Baosteel were introduced in this paper. Top high grades refer to the highest grades in the intemational silico...The development, production and application of top high-grade non-grain-oriented （NGO） silicon steels at Baosteel were introduced in this paper. Top high grades refer to the highest grades in the intemational silicon steel product standard and above. B35A230 and B50A250 were developed at Baosteel in 2009 and have been used in inverter compressors for air-conditioners, small transformers and big hydropower generators in the Three Gorges project. Small- batch production of B35A210 and B50A230, which exceed the highest grades listed in the intemational silicon steel product standard,began in 2010. That was a breakthrough in the silicon steel making history in China. Presently,Baosteel＇ s high- grade NGO products have passed the strict qualifications of the three major electric power equipment manufacturers in China and the leading international power equipment suppliers like ALSTOM, GE, SIEMENS, VESTAS, etc. These products are characterized by low iron loss, low anisotropy, good punchability and a high lamination factor. They have been used in the 770 MW hydropower generator at Xiluodu Power Station in the three gorges area, 1 000 MW thermal power generators and 2.5 MW wind power generators.展开更多
The electrochemical behaviors of n-type silicon wafers pH value and solid content of the slurry on the corrosion of silicon in silica-based slurry were investigated, and the influences of the wafers were studied by us...The electrochemical behaviors of n-type silicon wafers pH value and solid content of the slurry on the corrosion of silicon in silica-based slurry were investigated, and the influences of the wafers were studied by using electrochemical DC polarization and AC impedance techniques. The results revealed that these factors affected the corrosion behaviors of silicon wafers to different degrees and had their suitable parameters that made the maximum corrosion rate of the wafers. The corrosion potential of （100） sttrface was lower than that of（111）, whereas the current density of （100） was much higher than that of（111）.展开更多
基金supported by the Natural Science Foundation of Zhejiang Province(Grant No.LQ24F040007)the National Natural Science Foundation of China(Grant No.U22A2075)the Opening Project of State Key Laboratory of Polymer Materials Engineering(Sichuan University)(Grant No.sklpme2024-1-21).
文摘To address the increasing demand for massive data storage and processing,brain-inspired neuromorphic comput-ing systems based on artificial synaptic devices have been actively developed in recent years.Among the various materials inves-tigated for the fabrication of synaptic devices,silicon carbide(SiC)has emerged as a preferred choices due to its high electron mobility,superior thermal conductivity,and excellent thermal stability,which exhibits promising potential for neuromorphic applications in harsh environments.In this review,the recent progress in SiC-based synaptic devices is summarized.Firstly,an in-depth discussion is conducted regarding the categories,working mechanisms,and structural designs of these devices.Subse-quently,several application scenarios for SiC-based synaptic devices are presented.Finally,a few perspectives and directions for their future development are outlined.
基金supported by the National Natural Science Foundation of China(Nos.62025403 and U23A20354)the Natural Science Foundation of Zhejiang Province(LD22E020001)+1 种基金“Pioneer”and“Leading Goose”R&D Program of Zhejiang(2022C01215,2024C01055)the Fundamental Research Funds for the Central Universities(226-2022-00200).
文摘Nowadays,a stack of heavily doped polysilicon(poly-Si)and tunnel oxide(SiO_(x))is widely employed to improve the passivation performance in n-type tunnel oxide passivated contact(TOPCon)silicon solar cells.In this case,it is critical to develop an in-line advanced fabrication process capable of producing high-quality tunnel SiO_(x).Herein,an in-line ozone-gas oxidation(OGO)process to prepare the tunnel SiO_(x) is proposed to be applied in n-type TOPCon solar cell fabrication,which has obtained better performance compared with previously reported in-line plasma-assisted N2O oxidation(PANO)process.In order to explore the underlying mechanism,the electrical properties of the OGO and PANO tunnel SiO_(x) are analyzed by deep-level transient spectroscopy technology.Notably,continuous interface states in the band gap are detected for OGO tunnel SiO_(x),with the interface state densities(D_(it))of 1.2×10^(12)–3.6×10^(12) cm^(-2) eV^(-1) distributed in Ev+(0.15–0.40)eV,which is significantly lower than PANO tunnel SiO_(x).Furthermore,X-ray photoelectron spectroscopy analysis indicate that the percentage of SiO_(2)(Si^(4+))in OGO tunnel SiO_(x) is higher than which in PANO tunnel SiO_(x).Therefore,we ascribe the lower D_(it) to the good inhibitory effects on the formation of low-valent silicon oxides during the OGO process.In a nutshell,OGO tunnel SiO_(x) has a great potential to be applied in n-type TOPCon silicon solar cell,which may be available for global photovoltaics industry.
基金Project (2007J0012) supported by the Natural Science Foundation of Fujian Province, ChinaProject (2007HZ0005-2) supported by the Key Technological Program of Fujian Province, ChinaProject (BASIC-10341702) supported by Norwegian Research Council
文摘Elimination of phosphorus vaporizing from silicon was investigated. Si-P alloy made from electronic grade silicon was used. All the samples were analyzed by GD-MS. Theory calculation determines that phosphorus evaporates from molten silicon as gas species P and P2 at a finite reduced pressure. The experimental results show that phosphorus mass fraction can be decreased from 0.046% （460ppmw） to around 0.001% （10ppmw） under the condition of temperature 1 873 K, chamber pressure 0.6-0.8 Pa, holding time 1 h. Both experimental data and calculation results agree that at high phosphorus concentration, phosphorus removal is quite dependent on high chamber pressure while it becomes independent on low chamber pressure. The reason is that phosphorus evaporates from molten silicon as gas species P2 at a relatively high phosphorus concentration, while gas species P will be dominated in its vapour at low phosphorus content.
基金financial support from the National Basic Research Program of China("973 Program",Grant No.2013CB632101)the National Natural Science Foundation of China(Grant No.50902122)+2 种基金the R&D Program of Ministry of Education of China(Grant No.62501040202)the Innovation Team Project of Zhejiang Province(Grant No.2009R50005)the Xinmiao Program of Zhejiang Province,China
文摘In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon. Boron-doped silicon nanoparticles are synthesized by a plasma approach. They are then dispersed in solvents to form silicon paste. Silicon paste is screen-printed at the surface of silicon wafers. By annealing, boron atoms in silicon paste diffuse into silicon wafers. Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles. The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy （SIMS） and sheet resistance measurements.
基金supported by the National Natu-ral Science Foundation of China(Nos.62304163 and 62374128)the Key Research and Development Program of Shaanxi Province(No.2024GX-YBXM-512)+6 种基金the Young Talent Fund of Xi’an As-sociation for Science and Technology(No.959202413054)the Qinchuangyuan Cited High-level Innovation and Entrepreneurship Talent Projects(No.QCYRCXM-2022-364)the Natural Science Ba-sic Research Program of Shaanxi(No.2023-JC-QN-0471)the Open Project of State Key Laboratory of Silicon and Advanced Semi-conductor Materials(No.SKL2023-03)the State Key Laboratory of Advanced Technology for Materials Synthesis and Processing(Wuhan University of Technology,No.2024-KF-12)the Xidian University Specially Funded Project for Interdisciplinary Explo-ration(Nos.TZJH2024066,TZJH2024052,and TZJH2024050)the Fundamental Research Funds for the Central Universities(No.ZYTS25157).
文摘Perovskite/Silicon tandem solar cells have attracted increasing attention in photovoltaic fields.However,expensive electrode materials and complex manufacturing procedures of top semitransparent perovskite solar cells(PSCs)and conventional bottom silicon(Si)solar cells are incompatible with economical pro-duction.Single-walled carbon nanotube(SWCNT)films have been regarded as promising transparent elec-trodes because of their hydrophobic nature,earth-abundant carbon sources,mechanical robustness,and good chemical stability.Herein,we report a new and simple four-terminal tandem device with the in-tegration of SWCNT-based semitransparent PSCs and SWCNT-Si heterojunction solar cells.The employed SWCNT film is composed of high-crystallinity and small-bundled nanotubes with excellent optical trans-mittance and electric conductivity.It was adopted as the top electrode to realize semitransparent PSCs,which deliver a power conversion efficiency(PCE)of 12.02%,and the value can be further enhanced to 17.2%by introducing Spiro-OMeTAD into the SWCNT network.Interestingly,this semitransparent PSC has a bifacial feature and exhibits a bifaciality factor value of 91.1%.Moreover,the SWCNT film was trans-ferred onto the surface of a Si wafer at room temperature to achieve the SWCNT-Si device with a PCE of 16.2%.Eventually,by integrating these two solar cells,a perovskite/SWCNT-Si tandem device with an efficiency of over 22%was obtained.
基金support of this work from the NSFC (Nos. 51504117, 61764009 and 51762043)Yunnan Applied Basic Research Project (No. Y0120150138)Research Fund of Yunnan Province Collaborative Innovation Center (No. 2014XTZS009)
文摘Nanostructures of silicon are gradually becoming hot candidate due to outstanding capability for trapping light and improving conversion efficiency of solar cell. In this paper, silicon nanowires（SiNWs） and silicon inverted pyramid arrays（SiIPs） were introduced on surface of Gr-Si solar cell through silver and copper-catalyzed chemical etching, respectively. The effects of SiNWs and SiIPs on carrier lifetime, optical properties and efficiency of Gr-SiNWs and Gr-SiIPs solar cells were systematically analyzed. The results show that the inverted pyramid arrays have more excellent ability for balancing antireflectance loss and surface area enlargement. The power conversion efficiency（PCE） and carrier lifetime of Gr-SiIPs devices respectively increase by 62% and 34% by comparing with that of Gr-SiNWs solar cells. Finally, the Gr-SiIPs cell with PCE of 5.63% was successfully achieved through nitric acid doping. This work proposes a new strategy to introduce the inverted pyramid arrays for improving the performance of Gr-Si solar cells.
基金supported by the National Natural Science Foundation of China(Nos.50902122 and 50832006)Partial support from R&D Program of Ministry of Education of China (No.62501040202)+2 种基金Innovation Team Project of Zhejiang Province,China(No.2009R50005)Basic Funding for Research at Zhejiang University,China(No.2011FZA4005)Major Scientific program of Zhejiang Province,China(No. 2009C01024-2)
文摘Naturally oxidized freestanding silicon nanocrystals （Si NCs） are incorporated in commonly used encapsulating materials to explore the photoluminescent application of Si NCs in device structures such as solid-state lighting light-emitting diodes （LEDs） and solar cells. The quantum yield of Si NCs before the incorporation has reached about 45% at the excitation wavelength of 370 nm without any special surface modification. It is found that medium Ioadings, e.g., 5 wt% of Si NCs in encapsulating materials help to obtain high external quantum efficiency （EQE） of the mixtures of Si NCs and encapsulating materials. The curing of encapsulating materials significantly reduces EQE. Among all the encapsulating materials investigated in this work, silicone- OE6551 enables the highest EQE （21% at excitation wavelength λex = 370 nm） after curing. Based on current findings, we have discussed the continuous efforts to advance the photoluminescent application of Si NCs.
文摘The product quality of graiworiented silicon steel may be affected by each process because of its complicat- ed production technology. Morphologies, compositions and structures of forsterite film formed in different conditions on the samples subjected to high temperature annealing were measured by using a scanning electron microscope, an energy disperse spectroscope, an X ray diffractometer and Fourier transform infrared technique respectively. The morphologies and influential factors of forsterite film were investigated. The results showed that the major compo- nent of forsterite film composed of light-gray spherical particles was Mg2 SiO4, and the minor was MgAl2O4. If the amount of MgO coated on the surface of the steel was less, bare holes or even large-scale bare grains for forsterite film appeared. The higher temperature of water bath during decarburization annealing led to gaps of strips in forster ite film. Moreover, MgO coating method had great influence on forsterite film. Roller coating method was beneficial to increase compactness and smoothness of forsterite film, but was disadvantageous to its thickness.
文摘The interactions of Sn and S and their effects on the magnetic properties of non-oriented silicon steel sheets were discussed in reference to industrial production. Results show that minor amounts of Sn can improve magnetic induction sharply but have little effect on core loss when the S content is below 10 × 10 ^-4%. The precipitation of AlN can be restrained effectively by Sn. Sn, as the nucleus, can remove some of the inclusions with a size of 0.5μm or larger, but has little effect on inclusions smaller than 0.5 μm,which is the key factor affecting core loss. Sn improves the magnetic induction of finished steel sheets mainly through the change of the steel texture. The relationship between the magnetic induction and Sn and S content can be regressed as B50 = 1.69 -4.37 ws ＋0.30 Ws,. From the regression formulation,the magnetic induction can be improved by 0.03 T when 0.01% Sn is added under relatively low S content conditions.
基金financially supported by the National Natural Science Foundation of China (Nos. 51461027 and 51104080)
文摘Boron removal from metallurgical-grade silicon(MG-Si) using CaO–SiO2 slag was studied by employing a medium-frequency electromagnetic induction furnace.The relationship between the optical basicity(K)of the CaO–SiO2 slag and the distribution coefficient of boron(LB) was investigated.Consequently, the local minimum and maximum LBvalues of 0.72 and 1.58 are obtained when K = 0.56 and K = 0.71, respectively.The boron content in MG-Si decreases gradually with refinement time increasing, down to a minimum value of4.73 9 10-6.The controlling step in the removal of boron from MG-Si is not the chemical reaction at the interface of the slag and silicon.Instead, the controlling step is a diffusion mass transfer, in which boron impurities diffuse from molten silicon to the interface of the slag and silicon,or B2O3 formed by the chemical reaction diffuses from the slag–silicon interface to molten slag.
文摘Based on the industrial production of non-oriented silicon steel,calcium treatment by CaSi wire feeding during the RH refining process was studied. The thermodynamics of CaS inclusion formation was analyzed, and the morphology and the size distribution were observed. Furthermore, the change in inclusion characteristics after calcium treatment and the effect of calcium treatment on magnetic properties were discussed. The results show that the formation of MnS and A1N inclusions were restrained, and the aggregating, floating and removing of microinclusions after calcium treatment were effectively promoted. The cleanliness of liquid steel was obviously increased. The main type of inclusions was single phase of CaO, with some complex inclusions composed of CaO, SiO2 and MgO. No CaS inclusion was observed after an appropriate calcium treatment. The size of all inclusions was distributed in the range of 2 - 20 μm, and the number was about 1.8 × 10^5/mm3. In addition, as an increasing amount of calcium was added,the core loss gradually decreased to a stable level, and the magnetic induction decreased quickly after a slow increase. The optimal calcium treatment mode depends on the chemical composition of steel.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFA0205704 and 2018YFB2200101)the National Natural Science Foundation of China(Grant Nos.91964107 and 61774133)+2 种基金the Fundamental Research Funds for the Central Universities,China(Grant No.2018XZZX003-02)the National Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005)the Zhejiang University Education Foundation Global Partnership Fund.
文摘High-performance neuromorphic computing(i.e.,brain-like computing)is envisioned to seriously demand optoelectronically integrated artificial neural networks(ANNs)in the future.Optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs.For the large-scale deployment of high-performance neuromorphic computing in the future,it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon(Si)technologies.This calls for the development of Si-based optoelectronic synaptic devices.In this work we review the use of Si materials to make optoelectronic synaptic devices,which have either two-terminal or three-terminal structures.A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices.We also present the outlook of using Si materials for optoelectronic synaptic devices.
基金supported by the Key Projects of the National Science & Technology Pillar Program (No. 2011BAE13B03)the Fundamental Research Funds for the Central Universities (No. N110502001)
文摘High energy synchrotron diffraction offers great potential to study the recrystallization kinetics of metallic materials. To study the formation of Goss texture （{ [10}（001）） of grain oriented （GO） silicon steel during secondary recrystallization process, an in situ experiment using hi gh energy X-ray diffraction was designed. The results showed that the secondary recrystallization began when the heating temperature was 1,494 K, and the grains grew rapidly above this temperature. With an increase in annealing temperature, the large grains with 7 orientation [〈111〉//normal direction] formed and gradually occupied the dominant position. As the annealing temperature increased even further, the grains with Goss orientation to a very large size by devouring the 7 orientation grains that formed in the early annealing stage. A single crystal with a Goss orientation was observed in the GO silicon steel when the annealing temperature was 1,540 K.
基金Project supported by the National Natural Science Foundation of China (50032010 and 60225010)
文摘By indentation at room temperature followed by annealing at high temperatures, the pinning effect of germanium on dislocations in germanium-doped Czochralski silicon was investigated. Experimental results show that the dislocations in germanium-doped Czochralski silicon move shorter and slower than those in Czochralski silicon undoping with germanium when the concentration of germanium is over 1×1018 cm-3. The retarding velocity of dislocations is contributed to the dislocations pinning effect of the strain field introduced by the high concentration germanium, and the Ge4B cluster and the oxygen precipitation those are preferred to form at higher concentration germanium.
基金Item Sponsored by the National Natural Science Foundation of China[u1137601,51104080]
文摘The removal of boron impurity from metallurgical-grade silicon for solar cell application in slag system of CaO-SiO_2 is investigated.The experiments are conducted in an electromagnetic induction furnace which is used to heat. The distribution coefficient of boron(L_B)between slag and silicon phase is particularly examined in terms of the optical basicity of slag.With the increase of optical basicity,L_B increases to a local maximum value of 1.58 when the optical basicity is 0.71 after getting to the minimum value of 0.72 when the optical basicity is 0.56.In that above optical basicity of 0.71,L_B decrease sharply which indicates that increasing the basicity of slag is not always effective in boron removal from silicon.
基金supported by the National Basic Research Program of China(Grant No.2013CB632101)the National Natural Science Foundation of China forExcellent Young Researchers(Grant No.61222404)+1 种基金the Research and Development Program of Ministry of Education of China(Grant No.62501040202)the 2012 UAlberta MOST Joint Research Laboratories Program,China
文摘In the framework of density functional theory （DFT）, we have studied the electronic properties of alkene/alkyne- hydrosilylated silicon nanocrystals （Si NCs） in the size range from 0.8 nm to 1.6 nm. Among the alkenes with all kinds of functional groups considered in this work, only those containing -NH2 and -C4H3S lead to significant hydrosilylation- induced changes in the gap between the highest occupied molecular orbital （HOMO） and the lowest unoccupied molecular orbital （LUMO） of an Si NC at the ground state. The quantum confinement effect is dominant for all of the alkene- hydrosilylated Si NCs at the ground state. At the excited state, the prevailing effect of surface chemistry only occurs at the smallest （0.8 nm） Si NCs hydrosilylated with alkenes containing -NH2 and -C4H3S. Although the alkyne hydrosilylation gives rise to a more significant surface chemistry effect than alkene hydrosilylation, the quantum confinement effect remains dominant for alkyne-hydrosilylated Si NCs at the ground state. However, at the excited state, the effect of surface chemistry induced by the hydrosilylation with conjugated alkynes is strong enough to prevail over that of quantum confinement.
文摘Based on the industrial production of non-oriented silicon steel, the rare earth （RE） treatment during the Ruhrstahl Heraeus （RH） refining process was studied. The morphology and the size distribution were observed for the steel specimens treated with different RE treatment conditions. Furthermore, the formation and change of the nonmetallic inclusion characteristics of finished steel sheets after the RE treatment were discussed. The results have shown that in the present work,the suitable RE metal additions are 0.6 -0.9 kg/t steel. After the suitable RE treatment,the formation of AIN and MnS inclusions were restrained, and the aggregation, flotation and removal of nonmetallic inclusions were efficiently promoted and the cleanliness of liquid steel was significantly increased. Meanwhile, the total oxygen concentration reached the minimum value and thle desulfurization efficiency was optimal ,and the type of main inclusions was approximately spherical or elliptical spherical RE radicle inclusions whose size was relatively large.
文摘The development, production and application of top high-grade non-grain-oriented （NGO） silicon steels at Baosteel were introduced in this paper. Top high grades refer to the highest grades in the intemational silicon steel product standard and above. B35A230 and B50A250 were developed at Baosteel in 2009 and have been used in inverter compressors for air-conditioners, small transformers and big hydropower generators in the Three Gorges project. Small- batch production of B35A210 and B50A230, which exceed the highest grades listed in the intemational silicon steel product standard,began in 2010. That was a breakthrough in the silicon steel making history in China. Presently,Baosteel＇ s high- grade NGO products have passed the strict qualifications of the three major electric power equipment manufacturers in China and the leading international power equipment suppliers like ALSTOM, GE, SIEMENS, VESTAS, etc. These products are characterized by low iron loss, low anisotropy, good punchability and a high lamination factor. They have been used in the 770 MW hydropower generator at Xiluodu Power Station in the three gorges area, 1 000 MW thermal power generators and 2.5 MW wind power generators.
基金This study was financially supported by the National Natural Science Foundation of China (No.59925412)the Natural Science Foundation of Hunan Province of China (No.03JJY3015).
文摘The electrochemical behaviors of n-type silicon wafers pH value and solid content of the slurry on the corrosion of silicon in silica-based slurry were investigated, and the influences of the wafers were studied by using electrochemical DC polarization and AC impedance techniques. The results revealed that these factors affected the corrosion behaviors of silicon wafers to different degrees and had their suitable parameters that made the maximum corrosion rate of the wafers. The corrosion potential of （100） sttrface was lower than that of（111）, whereas the current density of （100） was much higher than that of（111）.
