The swift advancement of the Internet of Things(IoT)and the subsequent proliferation of smart devices have precipitated an exponential surge in demand for integrated analog-to-digital converters(ADCs)that exhibit low ...The swift advancement of the Internet of Things(IoT)and the subsequent proliferation of smart devices have precipitated an exponential surge in demand for integrated analog-to-digital converters(ADCs)that exhibit low power consumption and high stability across a broad spectrum of applications.Despite the notable progress witnessed in conventional silicon-based ADCs,they continue to confront constraints pertaining to miniaturization,wearability,and power efficiency—critical parameters for the effective functionality of IoT devices.In recent years,two dimensional semiconductors(2DSCs)have attracted notable interest in low-power circuitry and flexible electronics due to their intrinsically atomic-scale thickness and exceptional electrical properties.However,integrating 2DSCs into analog circuits poses substantial challenges,especially in the context of complex mixed-signal circuits.The divergent design requirements for digital and analog circuits also complicate the achievement of high-performance ADCs on a single chip.This paper presents an innovative 3-bit Flash ADC circuit utilizing 2DSCs.Through the synergistic optimization of materials,fabrication processes,and circuit design,the nonlinearity of the ADC is significantly reduced,resulting in a differential nonlinearity(DNL)of 0.072 least significant bit(LSB),an integral nonlinearity(INL)of 0.128 LSB,and a remarkably low power consumption of only 3.36μW.展开更多
Serum creatinine(Scr)and blood urea nitrogen(BUN)are key biomarkers for assessing human kidney function.Nevertheless,the quantitative and simultaneous detection of these two markers with high efficiency remains a chal...Serum creatinine(Scr)and blood urea nitrogen(BUN)are key biomarkers for assessing human kidney function.Nevertheless,the quantitative and simultaneous detection of these two markers with high efficiency remains a challenge.To address this,a highly sensitive surface‐enhanced Raman scattering(SERS)substrate,composed of carbonized photoresist embedded with silver nanoparticles(C‐AZ/Ag NPs),was developed for the efficient simultaneous detection of Scr and BUN.In the experiments,AZ5214E and silver nitrate(AgNO_(3))were first mixed in acetonitrile to prepare the precursor solution for UV photolithography.Subsequently,a porous anodic aluminum oxide coated with a thin chromium film served as a mask to transfer the pattern onto the substrate through UV lithography,and the feature size was tuned by controlling the development time.After that,the patterned substrate was carbonized under an argon atmosphere to yield the final C‐AZ/Ag NPs SERS platform.Using rhodamine 6G as a Raman reporter,the optimized C‐AZ/Ag NPs substrate achieved an enhancement factor of 1.27×10^(8)and a detection limit down to 10^(−9)M.Moreover,it exhibited good spectral uniformity with a relative standard deviation of 7.59%.Finally,clinical serum samples were tested for creatinine and urea nitrogen using the C‐AZ/Ag NPs substrate and cross‐validated against colorimetric assays.It demonstrated that the developed SERS platform accurately reproduced the trends of Scr concentration,which show significant potential for future clinical applications.展开更多
Flash memory,the dominant non-volatile memory technology,is essential for data-driven computing systems.With the growing demands of the information age,there is an urgent need to enhance both its operational speed and...Flash memory,the dominant non-volatile memory technology,is essential for data-driven computing systems.With the growing demands of the information age,there is an urgent need to enhance both its operational speed and data retention capabilities.Consequently,developing highly reliable memory that combines ultrafast write/erase operations with long-term retention has become a critical research objective.Here,we demonstrate a floating-gate memory based on a discrete Pt nanocrystal/h-BN/MoS_(2)van der Waals heterostructure,which combines ultrafast operation with long-term reliability.The Pt nanocrystals formed via rapid thermal annealing(RTA)are spatially isolated and effectively suppress charge leakage through tunneling defects,enabling stable device operation.The device exhibits excellent performance metrics,including a high on-off ratio(>10^(6)),ultrafast operational speed(20 ns),impressive retention time(>10^(5)s),and good endurance(>20,000 cycles).Furthermore,configurable logic-in-memory circuits are constructed,and a logic function is achieved by tuning the conductance of the FG memory.展开更多
In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing met...In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing methods,an enhanced double remnant polarization(2Pr)of 55.4μC/cm^(2),a higher maximum dielectric constant,and nearly wakeup-free were realized by modulating the power of the microwave.It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules,which facilitates the crystallization at low temperature.Furthermore,an amorphous indium gallium zinc oxide ferroelectric fieldeffect transistor treated with microwave annealing was fabricated,and a competitive memory window of 1.5 V was substantially achieved.These findings offer insights into the integration of HfO_(2)ferroelectric materials in non-volatile memory devices compatible with back-end-of-line(BEOL)in the future.展开更多
Photodetectors (PDs) are crucial in modern society as they enable thedetection of a diverse range of light-based signals. With the exponential increase in their development, materials are being used tocreate a wide ra...Photodetectors (PDs) are crucial in modern society as they enable thedetection of a diverse range of light-based signals. With the exponential increase in their development, materials are being used tocreate a wide range of PDs that play critical roles in enabling variousapplications and technologies. Image sensor technology has beenhindered due to the lack of a universal system that can integrate alltypes of PDs with silicon-based readout integrated circuits (ROICs).To address this issue, we conducted experiments adopting twodimensional materials as an example. High-performance MoS2-/MoTe2-based PDs were fabricated in the current work and the mostsuitable ROICs were identified to pair with them. This established asolid foundation for further researches in the field of image sensors.We developed and implemented a versatile testing system that uses aprinted circuit board to connect the PD and ROIC. After the ROICgenerates the sampled signal, it is collected and processed by algorithms, which overcome device uniformity limitations and produce ahigh-quality image that is visible to the naked eye. This universalsystem can be used with a wide range of PD and ROIC types madefrom different materials, making it highly convenient for diversetesting applications and the development of diverse image sensortypes.This robust new platform is expected to spur further innovationand advancements in this rapidly developing field。展开更多
基金supported by the National Key Research and Development Program(2021YFA1200500)the Innovation Program of Shanghai Municipal Education Commission(2021-01-07-00-07-E00077)+2 种基金the Science and Technology Commission of Shanghai Municipality(23JC1401100)the Shanghai Pilot Program for Basic Research-Fudan University 21TQ1400100(23TQ008)the New Cornerstone Science Foundation through the XPLORER PRIZE.
文摘The swift advancement of the Internet of Things(IoT)and the subsequent proliferation of smart devices have precipitated an exponential surge in demand for integrated analog-to-digital converters(ADCs)that exhibit low power consumption and high stability across a broad spectrum of applications.Despite the notable progress witnessed in conventional silicon-based ADCs,they continue to confront constraints pertaining to miniaturization,wearability,and power efficiency—critical parameters for the effective functionality of IoT devices.In recent years,two dimensional semiconductors(2DSCs)have attracted notable interest in low-power circuitry and flexible electronics due to their intrinsically atomic-scale thickness and exceptional electrical properties.However,integrating 2DSCs into analog circuits poses substantial challenges,especially in the context of complex mixed-signal circuits.The divergent design requirements for digital and analog circuits also complicate the achievement of high-performance ADCs on a single chip.This paper presents an innovative 3-bit Flash ADC circuit utilizing 2DSCs.Through the synergistic optimization of materials,fabrication processes,and circuit design,the nonlinearity of the ADC is significantly reduced,resulting in a differential nonlinearity(DNL)of 0.072 least significant bit(LSB),an integral nonlinearity(INL)of 0.128 LSB,and a remarkably low power consumption of only 3.36μW.
基金National Natural Science Foundation of China,Grant/Award Number:62374097Medical Science and Technology Project of Zhejiang Provincial Health Commission,Grant/Award Number:2022KY299。
文摘Serum creatinine(Scr)and blood urea nitrogen(BUN)are key biomarkers for assessing human kidney function.Nevertheless,the quantitative and simultaneous detection of these two markers with high efficiency remains a challenge.To address this,a highly sensitive surface‐enhanced Raman scattering(SERS)substrate,composed of carbonized photoresist embedded with silver nanoparticles(C‐AZ/Ag NPs),was developed for the efficient simultaneous detection of Scr and BUN.In the experiments,AZ5214E and silver nitrate(AgNO_(3))were first mixed in acetonitrile to prepare the precursor solution for UV photolithography.Subsequently,a porous anodic aluminum oxide coated with a thin chromium film served as a mask to transfer the pattern onto the substrate through UV lithography,and the feature size was tuned by controlling the development time.After that,the patterned substrate was carbonized under an argon atmosphere to yield the final C‐AZ/Ag NPs SERS platform.Using rhodamine 6G as a Raman reporter,the optimized C‐AZ/Ag NPs substrate achieved an enhancement factor of 1.27×10^(8)and a detection limit down to 10^(−9)M.Moreover,it exhibited good spectral uniformity with a relative standard deviation of 7.59%.Finally,clinical serum samples were tested for creatinine and urea nitrogen using the C‐AZ/Ag NPs substrate and cross‐validated against colorimetric assays.It demonstrated that the developed SERS platform accurately reproduced the trends of Scr concentration,which show significant potential for future clinical applications.
基金supported by the National Key Research and Development Program of China(2024YFA1208400)the National Natural Science Foundation of China(62525401,62322405,62374042,62090032 and 62304040)+3 种基金the Shanghai Pilot Program for Basic Research-Fudan University 21TQ1400100(21TQ011)the New Cornerstone Science Foundation through the XPLORER PRIZE(62488101)the Young Scientist Project of the MOE Innovation Platformthe Shaoxing Municipal Science and Technology Program Projects(2025A11016)。
文摘Flash memory,the dominant non-volatile memory technology,is essential for data-driven computing systems.With the growing demands of the information age,there is an urgent need to enhance both its operational speed and data retention capabilities.Consequently,developing highly reliable memory that combines ultrafast write/erase operations with long-term retention has become a critical research objective.Here,we demonstrate a floating-gate memory based on a discrete Pt nanocrystal/h-BN/MoS_(2)van der Waals heterostructure,which combines ultrafast operation with long-term reliability.The Pt nanocrystals formed via rapid thermal annealing(RTA)are spatially isolated and effectively suppress charge leakage through tunneling defects,enabling stable device operation.The device exhibits excellent performance metrics,including a high on-off ratio(>10^(6)),ultrafast operational speed(20 ns),impressive retention time(>10^(5)s),and good endurance(>20,000 cycles).Furthermore,configurable logic-in-memory circuits are constructed,and a logic function is achieved by tuning the conductance of the FG memory.
基金supported by National Key Research and Development Program of China under Grant 2021YFB3202500Shanghai Municipal Science and Technology Commission under Grant 23511102300.
文摘In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing methods,an enhanced double remnant polarization(2Pr)of 55.4μC/cm^(2),a higher maximum dielectric constant,and nearly wakeup-free were realized by modulating the power of the microwave.It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules,which facilitates the crystallization at low temperature.Furthermore,an amorphous indium gallium zinc oxide ferroelectric fieldeffect transistor treated with microwave annealing was fabricated,and a competitive memory window of 1.5 V was substantially achieved.These findings offer insights into the integration of HfO_(2)ferroelectric materials in non-volatile memory devices compatible with back-end-of-line(BEOL)in the future.
文摘Photodetectors (PDs) are crucial in modern society as they enable thedetection of a diverse range of light-based signals. With the exponential increase in their development, materials are being used tocreate a wide range of PDs that play critical roles in enabling variousapplications and technologies. Image sensor technology has beenhindered due to the lack of a universal system that can integrate alltypes of PDs with silicon-based readout integrated circuits (ROICs).To address this issue, we conducted experiments adopting twodimensional materials as an example. High-performance MoS2-/MoTe2-based PDs were fabricated in the current work and the mostsuitable ROICs were identified to pair with them. This established asolid foundation for further researches in the field of image sensors.We developed and implemented a versatile testing system that uses aprinted circuit board to connect the PD and ROIC. After the ROICgenerates the sampled signal, it is collected and processed by algorithms, which overcome device uniformity limitations and produce ahigh-quality image that is visible to the naked eye. This universalsystem can be used with a wide range of PD and ROIC types madefrom different materials, making it highly convenient for diversetesting applications and the development of diverse image sensortypes.This robust new platform is expected to spur further innovationand advancements in this rapidly developing field。
