Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homoge...Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homogeneous oxide semiconduc-tors.Herein,we propose the design of complementary inverter based on full ZnO TFTs.Li-N dual-doped ZnO(ZnO:(Li,N))acts as the p-type channel and Al-doped ZnO(ZnO:Al)serves as the n-type channel for fabrication of TFTs,and then the complemen-tary inverter is produced with p-and n-type ZnO TFTs.The homogeneous ZnO-based complementary inverter has typical volt-age transfer characteristics with the voltage gain of 13.34 at the supply voltage of 40 V.This work may open the door for the development of oxide complementary inverters for logic circuits.展开更多
Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN/GaN high-electron-mobility transistors. Low ohmic contact resistance of 0.15Ω.mm is obtained. It is found that the s...Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN/GaN high-electron-mobility transistors. Low ohmic contact resistance of 0.15Ω.mm is obtained. It is found that the sidewall obliquity near the regrown interface induced by the plasma dry etching has great influence on the total contact resistance. The fabricated device with a 100-nm T-shaped gate demonstrates a maximum drain current density of 0.95 A/mm at Vgs = 1 V and a maximum peak extrinsic transcondutance Gm of 216mS/ram. Moreover, a current gain cut-off frequency fT of 115 GHz and a maximum oscillation frequency fmax of 127 GHz are achieved.展开更多
A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),S...A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),SiC superjuction MOSFET(SJ MOSFET)and the conventional SiC MOSFET in this article.In the proposed SiC Hk-SJ-SBD MOSFET,under the combined action of the p-type region and the Hk dielectric layer in the drift region,the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance(Ron,sp).The integrated Schottky barrier diode(SBD)also greatly improves the reverse recovery performance of the device.TCAD simulation results indicate that the Ron,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm^(2)with a 2240 V breakdown voltage(BV),which is more than 72.4%,23%,5.6%lower than that of the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET with the 1950,2220,and 2220V BV,respectively.The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC,which are greatly reduced by more than 74%and 94%in comparison with those of all the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET,due to the integrated SBD in the proposed MOSFET.And the trade-off relationship between the Ron,sp and the BV is also significantly improved compared with that of the conventional MOSFET,Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature,respectively.In addition,compared with conventional SJ SiC MOSFET,the proposed SiC MOSFET has better immunity to charge imbalance,which may bring great application prospects.展开更多
A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated.Under the irradiation of a 4×4 mm^(2) planar solid 63Ni source with an activity of 2 mCi,the open−circuit voltage Vo...A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated.Under the irradiation of a 4×4 mm^(2) planar solid 63Ni source with an activity of 2 mCi,the open−circuit voltage Voc of the fabricated single 2×2 mm^(2) cell reaches as high as 1.62 V,the short−circuit current density Jsc is measured to be 16nA/cm^(2).The microbattery has a fill factor of 55%,and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%.The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.展开更多
Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor dep...Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor deposition(MOCVD) on an Fedoped semi-insulating(010) Ga_2O_3 substrate. The structure consisted of a 400 nm unintentionally doped(UID) Ga_2O_3 buffer layer and an 80 nm Si-doped channel layer. A high k HfO_2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at V_(gs) of 3 V. The off-state current was as low as 7.1 ×10^(-11) A/mm, and the drain current I_(ON)/I_(OFF) ratio reached 10~9. The transistors exhibited three-terminal off-state breakdown voltages of 450 and 550 V, corresponding to gate-to-drain spacing of 4 and 8 μm, respectively.展开更多
An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapt...An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapter board technology.Four layers of high-resistance silicon substrate stack packaging are implemented based on the wafer-level gold-gold bonding process.Each layer adopts though silicon via(TSV)technology to realize signal interconnection.A core monolithic integrated microwave chip(MMIC)is embedded in the silicon cavity,and the silicon-based filter is integrated with the high-resistance silicon substrate.The interconnect line,cavity and filter of the silicon-based adapter board are designed with AutoCAD,and HFSS is adopted for 3D electromagnetic field simulation.According to the measured results,the radio frequency(RF)of the mixing multi-function chip is 40-44 GHz and its intermediate frequency(IF)can cover the Ku band with a chip size of 10 mm×11 mm×1 mm.The multiplier multi-function chip operates at 16-20 GHz.The fundamental suppression is greater than 50 dB and the second harmonic suppression is better than 40 dB with a chip size of 8 mm×8 mm×1 mm.The cascaded fully assembled mixing component achieves a spur of better than-50 dBc and a gain of better than 15 dB.展开更多
The unexplored terahertz (THz) region involves important phenomena of both fundamental and applied natures. Examples include phonon interactions, rotational transitions and intermolecular dynamics. Frequency tunable h...The unexplored terahertz (THz) region involves important phenomena of both fundamental and applied natures. Examples include phonon interactions, rotational transitions and intermolecular dynamics. Frequency tunable high power THz wave generation has been successfully achieved utilizing lattice resonance of LiNbO3 and GaP crystals, respectively. Semiconductor devices utilizing electron tunneling effect have also been developed.展开更多
With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current （DC） arc jet chemical vapor deposition （CVD） are considered to be one of the most pro...With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current （DC） arc jet chemical vapor deposition （CVD） are considered to be one of the most promising materials for high-frequency and high-power electronic devices. In this paper, high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD, and then, the p-type surface conductive layer with the sheet carrier density of 10^11-10^13 cm-2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min. Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode, respectively, afterwards, they were treated by rapid vacuum annealing at different temperatures. The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method （TLM）. Due to the formation of Ti-related carbide at high temperature, the specific contact resistance of Ti/Au contact gradually decreases to 9.95 × 10^-5 Ω-cm2 as the temperature increases to 820℃. However, when the annealing temperature reaches 850℃, the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au. As for the as-deposited Au contact, it shows an ohmic contact. After annealing treatment at 550℃, low specific contact resistance was detected for Au contact, which is derived from the enhancement of interdiffusion between Au and diamond films.展开更多
In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improv...In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance.The breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V.The maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the AlGaN/GaN HEMTs exceed 30 and 20 GHz,respectively.The results demonstrate the potential of AlGaN/GaN HEMTs on freestanding GaN substrates for microwave power applications.展开更多
Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1 × 10^6 Qcm were achieved by vanadium doping during sublimation. Secondary-ion-mass-spectrometry （SIMS） was employed to determine the con...Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1 × 10^6 Qcm were achieved by vanadium doping during sublimation. Secondary-ion-mass-spectrometry （SIMS） was employed to determine the concentration of impurities in the crystals, such as B, AI, V and N. These results indicated that the concentration of nitrogen and aluminum kept on decreasing and the concentration of B and V was almost constant during the whole growth. An inner crucible was used to control the exhausting of vanadium, which made the uniformity of the high resistivity （〉1×10^6 Ωcm） in the wafer up to 80%. High-performance AlGaN/GaN high-electronmobility-transistor （HEMT） materials and devices were grown and fabricated on semi-insulating 6H-SiC sub- strates. The two-dimensional electron gas （2DEG） mobility at room-temperature was 1795 cm^2/V-s. The charge carrier concentration of the substrate determined by capacitance-voltage （C-V） test was 7.3×10^15 cm^-3. The device with a gate width of I mm exhibits a maximum output power of 5.5 W at 8 GHz, which proves the semi-insulating property of the substrates indirectly.展开更多
The effect of an initially grown high-temperature A1N buffer （HT-A1N） layer＇s thickness on the quality of an A1N epilayer grown on sapphire substrate by metalorganic chemical vapor deposition （MOCVD） in a two-ste...The effect of an initially grown high-temperature A1N buffer （HT-A1N） layer＇s thickness on the quality of an A1N epilayer grown on sapphire substrate by metalorganic chemical vapor deposition （MOCVD） in a two-step growth process is investigated. The characteristics of A1N epilayers are analyzed by using triple-axis crystal X-ray diffraction （XRD） and atomic force microscopy （AFM）. It is shown that the crystal quality of the A1N epilayer is closely related to its correlation length. The correlation length is determined by the thickness of the initially grown HT-A1N buffer layer. We find that the optimal HT-A1N buffer thickness for obtaining a high-quality A1N epilayer grown on sapphire substrate is about 20 nm.展开更多
The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor（HEMT） becomes one of the most important reliability issues with the downscaling of feature size.In this p...The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor（HEMT） becomes one of the most important reliability issues with the downscaling of feature size.In this paper,the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K.Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current.By comparing the experimental data with the numerical transport models,it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current.However,good agreement is found between the experimental data and the two-dimensional variable range hopping（2D-VRH） model.Therefore,it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer.Moreover,the activation energy of surface leakage current is extracted,which is around 0.083 eV.Finally,the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied.It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV,which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper.展开更多
Aiming at the problem that the lattice feature exceeds the view field of the scanning electron microscope(SEM)measuring system,a new lattice measuring method is proposed based on integral imaging technology.When the s...Aiming at the problem that the lattice feature exceeds the view field of the scanning electron microscope(SEM)measuring system,a new lattice measuring method is proposed based on integral imaging technology.When the system works,the SEM measuring system is equivalent to an integral image acquisition system.Firstly,a lattice measuring method is researched based on integral imaging theory.Secondly,the system parameters are calibrated by the VLSI lattice standard.Finally,the value of the lattice standard to be tested is determined based on the calibration parameters and the lattice measuring algorithm.The experimental results show that,compared with the traditional electron microscope measurement method,the relative error of the measured value of the algorithm is maintained within 0.2%,with the same level of measurement accuracy,but it expands the field of view of the electron microscope measurement system,which is suitable for the measurement of samples under high magnification.展开更多
As an ultra-precise instrument to characterize nano-morphology and structure,the morphology of atomic force microscopy(AFM)tip directly affects the quality of the scanned images,which in turn affects the measurement a...As an ultra-precise instrument to characterize nano-morphology and structure,the morphology of atomic force microscopy(AFM)tip directly affects the quality of the scanned images,which in turn affects the measurement accuracy.In order to accurately characterize three-dimensional information of AFM tip,a reconstruction method of AFM tip using 2μm lattice sample is researched.Under normal circumstances,an array of micro-nano structures is used to reconstruct the morphology of AFM tip.Therefore,the 2μm lattice sample was developed based on semiconductor technology as a characterization tool for tip reconstruction.The experimental results show that the 2μm lattice sample has good uniformity and consistency,and can be applied to the tip reconstruction method.In addition,the reconstruction method can accurately obtain the morphology of AFM tip,effectively eliminate the influence of the"probe effect"on the measurement results,and improve measurement accuracy.展开更多
The H-terminated diamond films, which exhibit high surface conductivity, have been used in high-frequency and high-power electronic devices. In this paper, the surface conductive channel on specimens from the same dia...The H-terminated diamond films, which exhibit high surface conductivity, have been used in high-frequency and high-power electronic devices. In this paper, the surface conductive channel on specimens from the same diamond film was obtained by hydrogen plasma treatment and by heating under a hydrogen atmosphere, respectively, and the surface carrier transport characteristics of both samples were compared and evaluated. The results show that the carrier mobility and carrier density of the sample treated by hydrogen plasma are 15 cm^2·V^（-1）·s^（-1） and greater than 5 × 1012 cm^（-2）, respectively, and that the carrier mobilities measured at five different areas are similar. Compared to the hydrogen-plasma-treated specimen, the thermally hydrogenated specimen exhibits a lower surface conductivity, a carrier density one order of magnitude lower, and a carrier mobility that varies from 2 to 33 cm^2·V^（-1）·s^（-1）. The activated hydrogen atoms restructure the diamond surface, remove the scratches, and passivate the surface states via the etching effect during the hydrogen plasma treatment process, which maintains a higher carrier density and a more stable carrier mobility.展开更多
Room-temperature 1.54-μm photoluminescence(PL)is observed from Er-doped Si-rich SiO_(2)(SiO_(2):Si:Er)films deposited by using the magnetron sputtering technique.To determine the optimum Si content in the SiO_(2):Si:...Room-temperature 1.54-μm photoluminescence(PL)is observed from Er-doped Si-rich SiO_(2)(SiO_(2):Si:Er)films deposited by using the magnetron sputtering technique.To determine the optimum Si content in the SiO_(2):Si:Er films,the percentage area of the Si target in the composite SiO_(2)-Si-Er target was changed from 0,to 10%,20%and 30%.The percentage area of the Er target was fixed at 1%.It is found that the optimum annealing temperatures for Er3+luminescence intensities are 900°C for the SiO_(2):Er film and 900,800,and 700°C for the SiO_(2):Si:Er films containing 10%,20%and 30%excess-Si(percentage areas of Si target),respectively.The SiO_(2):Si:Er film containing 20%excess-Si and annealed at 800°C has the intensest PL.展开更多
Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristic...Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristics were implemented by Keithley 4200 Semiconductor Characterization System. The experimental results indicated that a maximum drain current over 400 mA/mm and a peak external transconductance of 215 mS/mm can be achieved in the initial HEMTs. However, after the devices endured a 10-h thermal aging in furnace under nitrogen condition at 300 ℃, the maximum reduction of saturation drain current and external transconductance at high gate-source voltage and drain-source voltage were 30% and 35%, respectively. Additionally, an increased drain-source leakage current was observed at three-terminal off-state. It was inferred that the degradation was mainly related to electron-trapping defects in the InAlN barrier layer.展开更多
An improved Solar Radio Spectrometer working at 1.10-2.06 GHz with much improved spectral and temporal resolution, has been accomplished by the National Astronomical Observatories and Hebei Semiconductor Research Inst...An improved Solar Radio Spectrometer working at 1.10-2.06 GHz with much improved spectral and temporal resolution, has been accomplished by the National Astronomical Observatories and Hebei Semiconductor Research Institute,based on an old spectrometer at 1 2 GHz. The new spectrometer has a spectral resolution of 4 MHz and a temporal resolution of 5 ms, with an instantaneous detectable range from 0.02 to 10 times of the quiet Sun flux. It can measure both left and right circular polarization with an accuracy of 10% in degree of polarization. Some results of preliminary observations that could not be recorded by the old spectrometer at 1-2 GHz are presented.展开更多
The photoluminescence（PL） and electrical properties of Al GaN/GaN high electron mobility transistors（HEMTs） with different Fe doping concentrations in the GaN buffer layers were studied. It was found that, at low ...The photoluminescence（PL） and electrical properties of Al GaN/GaN high electron mobility transistors（HEMTs） with different Fe doping concentrations in the GaN buffer layers were studied. It was found that, at low Fe doping concentrations,the introduction of Fe atoms can result in a downward shift of the Fermi level in the GaN buffer layer, since the Fe atoms substitute Ga and introduce an FeGa^3＋/2＋ acceptor level. This results in a decrease in the yellow luminescence（YL） emission intensity accompanied by the appearance of an infrared（IR） emission, and a decrease in the off-state buffer leakage current（BLC）. However, a further increase in the Fe doping concentration will conversely result in the upward shift of the Fermi level due to the incorporation of O donors under the large flow rate of the Fe source. This results in an increased YL emission intensity accompanied by a decrease in the IR emission intensity, and an increase in the BLC. The intrinsic relationship between the PL and BLC characteristics is expected to provide a simple and effective method to understand the variation of the electrical characteristic in the modulation Fe-doped HEMTs by optical measurements.展开更多
A1GaN/GaN fin-shaped metal-oxide-semiconductor high-electron-mobility transistors （fin-MOSHEMTs） with dif- ferent fin widths （30Ohm and lOOnm） on sapphire substrates are fabricated and characterized. High-quality ...A1GaN/GaN fin-shaped metal-oxide-semiconductor high-electron-mobility transistors （fin-MOSHEMTs） with dif- ferent fin widths （30Ohm and lOOnm） on sapphire substrates are fabricated and characterized. High-quality self-Migned Al2O3 gate dielectric underneath an 80-nm T-shaped gate is employed by Muminum self-oxidation, which induces 4 orders of magnitude reduction in the gate leakage current. Compared with conventional planar MOSHEMTs, short channel effects of the fabricated fin-MOSHEMTs are significantly suppressed due to the tri- gate structure, and excellent de characteristics are obtained, such as extremely fiat output curves, smaller drain induced barrier lower, smaller subthreshold swing, more positive threshold voltage, higher transconductance and higher breakdown voltage.展开更多
基金supported by Zhejiang Provincial Natural Science Foundation of China(No.LZ24E020001).
文摘Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homogeneous oxide semiconduc-tors.Herein,we propose the design of complementary inverter based on full ZnO TFTs.Li-N dual-doped ZnO(ZnO:(Li,N))acts as the p-type channel and Al-doped ZnO(ZnO:Al)serves as the n-type channel for fabrication of TFTs,and then the complemen-tary inverter is produced with p-and n-type ZnO TFTs.The homogeneous ZnO-based complementary inverter has typical volt-age transfer characteristics with the voltage gain of 13.34 at the supply voltage of 40 V.This work may open the door for the development of oxide complementary inverters for logic circuits.
基金Supported by the National Natural Science Foundation of China under Grant No 61306113
文摘Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN/GaN high-electron-mobility transistors. Low ohmic contact resistance of 0.15Ω.mm is obtained. It is found that the sidewall obliquity near the regrown interface induced by the plasma dry etching has great influence on the total contact resistance. The fabricated device with a 100-nm T-shaped gate demonstrates a maximum drain current density of 0.95 A/mm at Vgs = 1 V and a maximum peak extrinsic transcondutance Gm of 216mS/ram. Moreover, a current gain cut-off frequency fT of 115 GHz and a maximum oscillation frequency fmax of 127 GHz are achieved.
基金supported in part by the National Natural Science Foundation of China(Grant No.61974015)Key R&D Project of Science and Technology Plan of the Sichuan province(Grant No.2021YFG0139)the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices of China(Grant No.KFJJ201806)。
文摘A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),SiC superjuction MOSFET(SJ MOSFET)and the conventional SiC MOSFET in this article.In the proposed SiC Hk-SJ-SBD MOSFET,under the combined action of the p-type region and the Hk dielectric layer in the drift region,the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance(Ron,sp).The integrated Schottky barrier diode(SBD)also greatly improves the reverse recovery performance of the device.TCAD simulation results indicate that the Ron,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm^(2)with a 2240 V breakdown voltage(BV),which is more than 72.4%,23%,5.6%lower than that of the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET with the 1950,2220,and 2220V BV,respectively.The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC,which are greatly reduced by more than 74%and 94%in comparison with those of all the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET,due to the integrated SBD in the proposed MOSFET.And the trade-off relationship between the Ron,sp and the BV is also significantly improved compared with that of the conventional MOSFET,Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature,respectively.In addition,compared with conventional SJ SiC MOSFET,the proposed SiC MOSFET has better immunity to charge imbalance,which may bring great application prospects.
基金by the National Natural Science Foundation of China(No 51075344)Natural Science Foundation of Fujian Province(No 2010J01015).
文摘A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated.Under the irradiation of a 4×4 mm^(2) planar solid 63Ni source with an activity of 2 mCi,the open−circuit voltage Voc of the fabricated single 2×2 mm^(2) cell reaches as high as 1.62 V,the short−circuit current density Jsc is measured to be 16nA/cm^(2).The microbattery has a fill factor of 55%,and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%.The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.
基金supported by the National Natural Science Foundation of China(Nos.61674130,61604137)
文摘Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor deposition(MOCVD) on an Fedoped semi-insulating(010) Ga_2O_3 substrate. The structure consisted of a 400 nm unintentionally doped(UID) Ga_2O_3 buffer layer and an 80 nm Si-doped channel layer. A high k HfO_2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at V_(gs) of 3 V. The off-state current was as low as 7.1 ×10^(-11) A/mm, and the drain current I_(ON)/I_(OFF) ratio reached 10~9. The transistors exhibited three-terminal off-state breakdown voltages of 450 and 550 V, corresponding to gate-to-drain spacing of 4 and 8 μm, respectively.
文摘An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapter board technology.Four layers of high-resistance silicon substrate stack packaging are implemented based on the wafer-level gold-gold bonding process.Each layer adopts though silicon via(TSV)technology to realize signal interconnection.A core monolithic integrated microwave chip(MMIC)is embedded in the silicon cavity,and the silicon-based filter is integrated with the high-resistance silicon substrate.The interconnect line,cavity and filter of the silicon-based adapter board are designed with AutoCAD,and HFSS is adopted for 3D electromagnetic field simulation.According to the measured results,the radio frequency(RF)of the mixing multi-function chip is 40-44 GHz and its intermediate frequency(IF)can cover the Ku band with a chip size of 10 mm×11 mm×1 mm.The multiplier multi-function chip operates at 16-20 GHz.The fundamental suppression is greater than 50 dB and the second harmonic suppression is better than 40 dB with a chip size of 8 mm×8 mm×1 mm.The cascaded fully assembled mixing component achieves a spur of better than-50 dBc and a gain of better than 15 dB.
文摘The unexplored terahertz (THz) region involves important phenomena of both fundamental and applied natures. Examples include phonon interactions, rotational transitions and intermolecular dynamics. Frequency tunable high power THz wave generation has been successfully achieved utilizing lattice resonance of LiNbO3 and GaP crystals, respectively. Semiconductor devices utilizing electron tunneling effect have also been developed.
基金financially supported by the National Natural Science Foundation of China (No. 51272024)the Ph.D. Programs Foundation of the Ministry of Education of China (No. 20110006110011)the Fundamental Research Funds for Central Universities (No. FRF-TP-13-035A)
文摘With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current （DC） arc jet chemical vapor deposition （CVD） are considered to be one of the most promising materials for high-frequency and high-power electronic devices. In this paper, high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD, and then, the p-type surface conductive layer with the sheet carrier density of 10^11-10^13 cm-2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min. Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode, respectively, afterwards, they were treated by rapid vacuum annealing at different temperatures. The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method （TLM）. Due to the formation of Ti-related carbide at high temperature, the specific contact resistance of Ti/Au contact gradually decreases to 9.95 × 10^-5 Ω-cm2 as the temperature increases to 820℃. However, when the annealing temperature reaches 850℃, the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au. As for the as-deposited Au contact, it shows an ohmic contact. After annealing treatment at 550℃, low specific contact resistance was detected for Au contact, which is derived from the enhancement of interdiffusion between Au and diamond films.
文摘In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance.The breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V.The maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the AlGaN/GaN HEMTs exceed 30 and 20 GHz,respectively.The results demonstrate the potential of AlGaN/GaN HEMTs on freestanding GaN substrates for microwave power applications.
基金supported by the National Natural Sci-ence Foundation of China under grant No. 50472068 and No. 50721002the National "863" High Technology Re-search and Development Program of China under grant No. 2006AA03A145 and No. 2007AA03Z405+1 种基金the Na-tional Basic Research Program of China under grant No.2009CB930503the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China under grant No. 707039
文摘Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1 × 10^6 Qcm were achieved by vanadium doping during sublimation. Secondary-ion-mass-spectrometry （SIMS） was employed to determine the concentration of impurities in the crystals, such as B, AI, V and N. These results indicated that the concentration of nitrogen and aluminum kept on decreasing and the concentration of B and V was almost constant during the whole growth. An inner crucible was used to control the exhausting of vanadium, which made the uniformity of the high resistivity （〉1×10^6 Ωcm） in the wafer up to 80%. High-performance AlGaN/GaN high-electronmobility-transistor （HEMT） materials and devices were grown and fabricated on semi-insulating 6H-SiC sub- strates. The two-dimensional electron gas （2DEG） mobility at room-temperature was 1795 cm^2/V-s. The charge carrier concentration of the substrate determined by capacitance-voltage （C-V） test was 7.3×10^15 cm^-3. The device with a gate width of I mm exhibits a maximum output power of 5.5 W at 8 GHz, which proves the semi-insulating property of the substrates indirectly.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60876009)
文摘The effect of an initially grown high-temperature A1N buffer （HT-A1N） layer＇s thickness on the quality of an A1N epilayer grown on sapphire substrate by metalorganic chemical vapor deposition （MOCVD） in a two-step growth process is investigated. The characteristics of A1N epilayers are analyzed by using triple-axis crystal X-ray diffraction （XRD） and atomic force microscopy （AFM）. It is shown that the crystal quality of the A1N epilayer is closely related to its correlation length. The correlation length is determined by the thickness of the initially grown HT-A1N buffer layer. We find that the optimal HT-A1N buffer thickness for obtaining a high-quality A1N epilayer grown on sapphire substrate is about 20 nm.
基金supported by the National Natural Science Foundation of China(Grant Nos.61334002,61106106,and 61474091)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201206)+3 种基金the New Experiment Development Funds for Xidian University,China(Grant No.SY1213)the 111 Project,China(Grant No.B12026)the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry,Chinathe Fundamental Research Funds for the Central Universities,China(Grant No.K5051325002)
文摘The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor（HEMT） becomes one of the most important reliability issues with the downscaling of feature size.In this paper,the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K.Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current.By comparing the experimental data with the numerical transport models,it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current.However,good agreement is found between the experimental data and the two-dimensional variable range hopping（2D-VRH） model.Therefore,it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer.Moreover,the activation energy of surface leakage current is extracted,which is around 0.083 eV.Finally,the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied.It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV,which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper.
基金supported by the National Key Research and Development Program(No.2019YFB2005503)。
文摘Aiming at the problem that the lattice feature exceeds the view field of the scanning electron microscope(SEM)measuring system,a new lattice measuring method is proposed based on integral imaging technology.When the system works,the SEM measuring system is equivalent to an integral image acquisition system.Firstly,a lattice measuring method is researched based on integral imaging theory.Secondly,the system parameters are calibrated by the VLSI lattice standard.Finally,the value of the lattice standard to be tested is determined based on the calibration parameters and the lattice measuring algorithm.The experimental results show that,compared with the traditional electron microscope measurement method,the relative error of the measured value of the algorithm is maintained within 0.2%,with the same level of measurement accuracy,but it expands the field of view of the electron microscope measurement system,which is suitable for the measurement of samples under high magnification.
文摘As an ultra-precise instrument to characterize nano-morphology and structure,the morphology of atomic force microscopy(AFM)tip directly affects the quality of the scanned images,which in turn affects the measurement accuracy.In order to accurately characterize three-dimensional information of AFM tip,a reconstruction method of AFM tip using 2μm lattice sample is researched.Under normal circumstances,an array of micro-nano structures is used to reconstruct the morphology of AFM tip.Therefore,the 2μm lattice sample was developed based on semiconductor technology as a characterization tool for tip reconstruction.The experimental results show that the 2μm lattice sample has good uniformity and consistency,and can be applied to the tip reconstruction method.In addition,the reconstruction method can accurately obtain the morphology of AFM tip,effectively eliminate the influence of the"probe effect"on the measurement results,and improve measurement accuracy.
基金financially supported by the National Natural Science Foundation of China (No. 51402013)the China Postdoctoral Science Foundation (No. 2015T80037)the Fundamental Research Funds for Central Universities (No. FRF-TP-15-052A2)
文摘The H-terminated diamond films, which exhibit high surface conductivity, have been used in high-frequency and high-power electronic devices. In this paper, the surface conductive channel on specimens from the same diamond film was obtained by hydrogen plasma treatment and by heating under a hydrogen atmosphere, respectively, and the surface carrier transport characteristics of both samples were compared and evaluated. The results show that the carrier mobility and carrier density of the sample treated by hydrogen plasma are 15 cm^2·V^（-1）·s^（-1） and greater than 5 × 1012 cm^（-2）, respectively, and that the carrier mobilities measured at five different areas are similar. Compared to the hydrogen-plasma-treated specimen, the thermally hydrogenated specimen exhibits a lower surface conductivity, a carrier density one order of magnitude lower, and a carrier mobility that varies from 2 to 33 cm^2·V^（-1）·s^（-1）. The activated hydrogen atoms restructure the diamond surface, remove the scratches, and passivate the surface states via the etching effect during the hydrogen plasma treatment process, which maintains a higher carrier density and a more stable carrier mobility.
基金Supported by the National Natural Science Foundation of China under Grant No.59832100the State Key Laboratory on Integrated Optoelectronics。
文摘Room-temperature 1.54-μm photoluminescence(PL)is observed from Er-doped Si-rich SiO_(2)(SiO_(2):Si:Er)films deposited by using the magnetron sputtering technique.To determine the optimum Si content in the SiO_(2):Si:Er films,the percentage area of the Si target in the composite SiO_(2)-Si-Er target was changed from 0,to 10%,20%and 30%.The percentage area of the Er target was fixed at 1%.It is found that the optimum annealing temperatures for Er3+luminescence intensities are 900°C for the SiO_(2):Er film and 900,800,and 700°C for the SiO_(2):Si:Er films containing 10%,20%and 30%excess-Si(percentage areas of Si target),respectively.The SiO_(2):Si:Er film containing 20%excess-Si and annealed at 800°C has the intensest PL.
基金Supported by National Natural Science Foundation of China(No.60876009)Natural Science Foundation of Tianjin(No.09JCZDJC16600)
文摘Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristics were implemented by Keithley 4200 Semiconductor Characterization System. The experimental results indicated that a maximum drain current over 400 mA/mm and a peak external transconductance of 215 mS/mm can be achieved in the initial HEMTs. However, after the devices endured a 10-h thermal aging in furnace under nitrogen condition at 300 ℃, the maximum reduction of saturation drain current and external transconductance at high gate-source voltage and drain-source voltage were 30% and 35%, respectively. Additionally, an increased drain-source leakage current was observed at three-terminal off-state. It was inferred that the degradation was mainly related to electron-trapping defects in the InAlN barrier layer.
基金Supported by the National Natural Science Foundation of China.
文摘An improved Solar Radio Spectrometer working at 1.10-2.06 GHz with much improved spectral and temporal resolution, has been accomplished by the National Astronomical Observatories and Hebei Semiconductor Research Institute,based on an old spectrometer at 1 2 GHz. The new spectrometer has a spectral resolution of 4 MHz and a temporal resolution of 5 ms, with an instantaneous detectable range from 0.02 to 10 times of the quiet Sun flux. It can measure both left and right circular polarization with an accuracy of 10% in degree of polarization. Some results of preliminary observations that could not be recorded by the old spectrometer at 1-2 GHz are presented.
基金Project supported by the Major Research Plan of the National Natural Science Foundation of China(Grant No.91433112)the National Natural Science Foundation of China(Grant No.51672163)the Key Laboratory of Functional Crystal Materials and Device(Shandong University,Ministry of Education),China(Grant No.JG1401)
文摘The photoluminescence（PL） and electrical properties of Al GaN/GaN high electron mobility transistors（HEMTs） with different Fe doping concentrations in the GaN buffer layers were studied. It was found that, at low Fe doping concentrations,the introduction of Fe atoms can result in a downward shift of the Fermi level in the GaN buffer layer, since the Fe atoms substitute Ga and introduce an FeGa^3＋/2＋ acceptor level. This results in a decrease in the yellow luminescence（YL） emission intensity accompanied by the appearance of an infrared（IR） emission, and a decrease in the off-state buffer leakage current（BLC）. However, a further increase in the Fe doping concentration will conversely result in the upward shift of the Fermi level due to the incorporation of O donors under the large flow rate of the Fe source. This results in an increased YL emission intensity accompanied by a decrease in the IR emission intensity, and an increase in the BLC. The intrinsic relationship between the PL and BLC characteristics is expected to provide a simple and effective method to understand the variation of the electrical characteristic in the modulation Fe-doped HEMTs by optical measurements.
基金Supported by the National Natural Science Foundation of China under Grant No 61306113
文摘A1GaN/GaN fin-shaped metal-oxide-semiconductor high-electron-mobility transistors （fin-MOSHEMTs） with dif- ferent fin widths （30Ohm and lOOnm） on sapphire substrates are fabricated and characterized. High-quality self-Migned Al2O3 gate dielectric underneath an 80-nm T-shaped gate is employed by Muminum self-oxidation, which induces 4 orders of magnitude reduction in the gate leakage current. Compared with conventional planar MOSHEMTs, short channel effects of the fabricated fin-MOSHEMTs are significantly suppressed due to the tri- gate structure, and excellent de characteristics are obtained, such as extremely fiat output curves, smaller drain induced barrier lower, smaller subthreshold swing, more positive threshold voltage, higher transconductance and higher breakdown voltage.
