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Unlocking of Schottky Barrier Near the Junction of MoS_(2)Heterostructure Under Electrochemical Potential
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作者 Kubra Aydin Mansu Kim +8 位作者 Hyunho Seok Chulwoo Bae Jinhyoung Lee Muyoung Kim Jonghwan Park Joseph T.Hupp Dongmok Whang Hyeong-U Kim Taesung Kim 《Energy & Environmental Materials》 2025年第1期323-329,共7页
The exploration of heterostructures composed of two-dimensional(2D)transition metal dichalcogenide(TMDc)materials has garnered significant research attention due to the distinctive properties of each individual compon... The exploration of heterostructures composed of two-dimensional(2D)transition metal dichalcogenide(TMDc)materials has garnered significant research attention due to the distinctive properties of each individual component and their phase-dependent unique properties.Using the plasma-enhanced chemical vapor deposition(PECVD)method,we analyze the fabrication of heterostructures consisting of two phases of molybdenum disulfide(MoS_(2))in four different cases.The initial hydrogen evolution reaction(HER)polarization curve indicates that the activity of the heterostructure MoS_(2)is consistent with that of the underlying MoS_(2),rather than the surface activity of the upper MoS_(2).This behavior can be attributed to the presence of Schottky barriers,which include contact resistance,which significantly hampers the efficient charge transfer at junctions between the two different phases of MoS_(2)layers and is mediated by van der Waals bonds.Remarkably,the energy barrier at the junction dissipates upon reaching a certain electrochemical potential,indicating surface activation from the top phase of MoS_(2)in the heterostructure.Notably,the 1T/2H MoS_(2)heterostructure demonstrates enhanced electrochemical stability compared to its metastable 1T-MoS_(2).This fundamental understanding paves the way for the creation of phase-controllable heterostructures through an experimentally viable PECVD,offering significant promise for a wide range of applications. 展开更多
关键词 hydrogen evolution reaction(HER) molybdenum disulfide(MoS_(2)) plasmaenhanced chemical vapor deposition(PECVD) Schottky barrier van der Waals(vdW)heterostructure
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