Due to advantages of high power-conversion efficiency(PCE), large power-to-weight ratio(PWR), low cost and solution processibility, flexible perovskite solar cells(f-PSCs) have attracted extensive attention in recent ...Due to advantages of high power-conversion efficiency(PCE), large power-to-weight ratio(PWR), low cost and solution processibility, flexible perovskite solar cells(f-PSCs) have attracted extensive attention in recent years. The PCE of f-PSCs has developed rapidly to over 25%, showing great application prospects in aerospace and wearable electronic devices. This review systematically sorts device structures and compositions of f-PSCs, summarizes various methods to improve its efficiency and stability recent years. In addition, the applications and potentials of f-PSCs in space vehicle and aircraft was discussed. At last, we prospect the key scientific and technological issues that need to be addressed for f-PSCs at current stage.展开更多
The effect of Tb407 on electrical behavior of the ZnO-Pr6Oll-based varistor ceramics was investigated. Microstructural analysis indicated that the addition of Tb407 decreased average grain size from 3.6 to 3.2 and inc...The effect of Tb407 on electrical behavior of the ZnO-Pr6Oll-based varistor ceramics was investigated. Microstructural analysis indicated that the addition of Tb407 decreased average grain size from 3.6 to 3.2 and increased the sintered density from 5.58 to 5.68 g/cm3. As the amount ofTb407 increased, the breakdown field increased from 9393 to 12437 V/cm and the nonlinear coefficient increased from 50 to 65. The varistor ceramics added with 0.5 mol.% in the amount of Tb407 exhibited an excellent stability by exhibiting 0. 1% in the variation rate of the breakdown field, 0% in the variation rate of the nonlinear coefficient, and 8.8% in the variation rate of the leakage current density for DC-accelerated aging stress of 0.85 E1 mA/115 ℃/24 h.展开更多
The electrical properties and ageing behavior of the rare earths （Pr6O11-Er2O3-Y2O3）-doped ZnO varistor ceramics were systematically investigated at sintering temperature range of 1335-1350°C. With an increase ...The electrical properties and ageing behavior of the rare earths （Pr6O11-Er2O3-Y2O3）-doped ZnO varistor ceramics were systematically investigated at sintering temperature range of 1335-1350°C. With an increase in the sintering temperature, the sintered density increased from 5.41 to 5.64g/cm3 and the average grain size increased from 5.8 to 7.9μm. The varistor properties and ageing behavior were significantly affected by small sintering temperature range of 1335-1350°C. The breakdown field noticeably decreased from 5767 to 3628V/cm with an increase in the sintering temperature. The varistor ceramics exhibited the highest nonlinear coefficient （43.2） at the sintering temperature of 1340°C. The varistor ceramics sintered at 1350°C exhibited a surprisingly excellent stability by exhibiting 0.3% in the variation rate of the breakdown field and 0.3% in the variation rate of the nonlinear coefficient for ageing stress of 0.95 E1mA/150°C/24 h.展开更多
The effect of sintering temperature on microstructure, electrical properties, and pulse aging behavior of （V2O5-Mn3O4-Er2O3）-doped zinc oxide varistor ceramics was systematically studied. When the sintering temperat...The effect of sintering temperature on microstructure, electrical properties, and pulse aging behavior of （V2O5-Mn3O4-Er2O3）-doped zinc oxide varistor ceramics was systematically studied. When the sintering temperature increased, the average grain size increased from 6.1 to 8.7μm and the sintered density decreased from 5.52 to 5.43 g/cm3. The breakdown field decreased from 3856 to 922 V/cm with an increase in the sintering temperature up to 900 °C, whereas a further increase to 2352 V/cm at 925 °C. The nonlinear coefficient increased pronouncedly from 4.6 to 30.0 with an increase in the sintering temperature. The varistor ceramics sintered at 850 °C exhibited the best clamping characteristics, with the clamp voltage ratio of the range of 2.22-2.88 for pulse current of 1-25 A. The varistor ceramics sintered at 925 °C exhibited the strongest stability, with %ΔE1 mA/cm2=-8.8% after applying the multi-pulse current of 25 A.展开更多
Anisotropic evolution of the step edges on the compressive-strained In0.2Ga0.8As/GaAs（001） surface has been investigated by scanning tunneling microscopy （STM）. The experiments suggest that step edges are indeed s...Anisotropic evolution of the step edges on the compressive-strained In0.2Ga0.8As/GaAs（001） surface has been investigated by scanning tunneling microscopy （STM）. The experiments suggest that step edges are indeed sinuous and protrude somewhere a little way along the [110] direction, which is different from the classical waviness predicted by the theoretical model. We consider that the monatomic step edges undergo a morphological instability induced by the anisotropic diffusion of adatoms on the terrace during annealing, and we improve a kinetic model of step edge based on the classical Burton Cabrer-Frank （BCF） model in order to determine the normal velocity of step enlargement. The results show that the normal velocity is proportional to the arc length of the peninsula, which is consistent with the first result of our kinetic model. Additionally, a significant phenomenon is an excess elongation along the [110] direction at the top of the peninsula with a higher aspect ratio, which is attributed to the restriction of diffusion lengths.展开更多
AlN/GaN superlattice buffer is inserted between GaN epitaxiai layer and Si substrate before epitaxiai growth of GaN layer. High-quality and crack-free GaN epitaxiai layers can be obtained by inserting AlN/GaN superlat...AlN/GaN superlattice buffer is inserted between GaN epitaxiai layer and Si substrate before epitaxiai growth of GaN layer. High-quality and crack-free GaN epitaxiai layers can be obtained by inserting AlN/GaN superlattice buffer layer. The influence of AlN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by using AlN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.展开更多
The microstructure, electrical and dielectric properties, and DC-accelerated aging of the ZPCCA （ZnO-Pr6O11-CoO- Cr203-A1203） ceramics were investigated with various contents of Er203. The ceramic phases consisted o...The microstructure, electrical and dielectric properties, and DC-accelerated aging of the ZPCCA （ZnO-Pr6O11-CoO- Cr203-A1203） ceramics were investigated with various contents of Er203. The ceramic phases consisted of a bulk phase of ZnO grains, and a minor secondary phase of mixture of Pr6O11 and Er203. The increase of the content of doped Er203 increased the densities of sintered pellet from 5.66 to 5.85 g/cm3, and decreased the average grain size from 9.6 to 6.3 μm. With the increase of the content of doped Er203, the breakdown field increased from 2390 to 4530 V/cm, and the nonlinear coefficient increased from 28.4 to 39.1. The sample doped with 0.25 mol.% Er203 exhibited the strongest electrical stability; variation rates for the breakdown field measured at 1.0 mA/cm2, and for the non-ohmic coefficient were -3.4% and -23,8%, respectively, after application of a stress of 0.95 Eu/125 ℃/24 h.展开更多
The effect of small changes in sintering temperature on microstructure, electrical properties, dielectric characteristics, and degradation behavior of V-Mn-Nb-Gd co-doped zinc oxide ceramics was investigated. With the...The effect of small changes in sintering temperature on microstructure, electrical properties, dielectric characteristics, and degradation behavior of V-Mn-Nb-Gd co-doped zinc oxide ceramics was investigated. With the increase of sintering temperature, the densities of the sintered pellets decreased from 5.54 to 5.42 g/cm3 and the average grain size increased from 4.1 to 11.7 μm. The breakdown field(E1 m A) decreased noticeably from 7138 to 920 V/cm with the increase of sintering temperature. The varistor ceramics sintered at 900 ℃ exhibited excellent nonohmic properties, which were 66 for the nonohmic coefficient and 77 μA/cm2 for the leakage current density. Concerning stability, the varistors sintered at 900 ℃ exhibited the strongest accelerated degradation characteristics, with ΔE1 mA =-9.2% for DC accelerated degradation stress of 0.85 E1 m A at 85 °C for 24 h.展开更多
Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition （LPCVD） with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 duri...Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition （LPCVD） with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction （XRD） patterns indicate that the deposited films are highly textured （111） orientation. The surface morphology and roughness are determined by scanning electron microscopy （SEM） and atomic force microscopy （AFM）. The surface features are spherulitic texture with average grain size of 100nm, and the rms roughness is 20nm （AFM 5×5 μm images）. Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems （MEMS） devices such as SiC based filters.展开更多
This research work aims to reduce the band gap of thin layers of titanium oxide by the incorporation of graphene oxide sheets. Thin layers of the TiO2-GO composites were prepared on a glass substrate by the spin-coati...This research work aims to reduce the band gap of thin layers of titanium oxide by the incorporation of graphene oxide sheets. Thin layers of the TiO2-GO composites were prepared on a glass substrate by the spin-coating technique from GO and an aqueous solution of TiO2. A significant decrease in optical band gap was observed at the TiO2-GO compound compared to that of pure TiO2. Samples as prepared were characterized using XRD, SEM and UV-visible spectra. XRD analysis revealed the amorphous nature of the deposited layers. Scanning electron microscope reveals the dispersion of graphene nanofiles among titanium oxide nanoparticles distributed at the surface with an almost uniform size distribution. The band gap has been calculated and is around 2 eV after incorporation of Graphene oxide. The chemical bond C-Ti between the titanium oxide and graphene sheets is at the origin of this reduction.展开更多
Using the transfer matrix method approach (TMM), the present paper attempts to determine the optical properties of quasi-periodic symmetric one-dimensional photonic systems. In addition, it studies hybrid hetero-struc...Using the transfer matrix method approach (TMM), the present paper attempts to determine the optical properties of quasi-periodic symmetric one-dimensional photonic systems. In addition, it studies hybrid hetero-structure systems constructed by using periodic and quasi-periodic multilayer systems. The effect of symmetry applied to symmetric multilayer systems results in the appearance of optical windows at the photonic band gaps (PBG) of the system. The use of hybrid symmetric systems, at normal incidence in the visible range, show that the complete photonic band gap is the sum of bands from individual systems. The results show also that the width of the PBG depends on the parameters and nature of the built system.展开更多
In this article, a detailed analysis of the wet- etching technique for AIGaN/GaN heterostructure using dry thermal oxidation followed by a wet alkali etching was performed. The experimental results show that the oxida...In this article, a detailed analysis of the wet- etching technique for AIGaN/GaN heterostructure using dry thermal oxidation followed by a wet alkali etching was performed. The experimental results show that the oxida- tion plays a key role in the wet-etching method and the etching depth is mainly determined by the oxidation tem- perature and time. The correlation of etching roughness with oxidation time and temperature was investigated. It is found that there exists a critical oxidation temperature in the oxidation process. Finally, a physical explanation of the oxidation procedure for A1GaN layer was given.展开更多
The effect of sintering temperature on microstructure and varistor properties of Zn-V-O-based ceramics incorporated with Mn-Nb-Tb was investigated. The results showed that the increase of sintering temperature in the ...The effect of sintering temperature on microstructure and varistor properties of Zn-V-O-based ceramics incorporated with Mn-Nb-Tb was investigated. The results showed that the increase of sintering temperature in the range from 875 to 950 °C decreased the densities of sintered pellets in the range of 5.55 to 5.45 g/cm3 and increased the average grain size in the range of 4.1 to 8.8 ？m. The breakdown field decreased noticeably from 7443 to 1064 V/cm with increasing sintering temperature from 875 to 950 °C. The varistor ceramics sintered at 900 ？C exhibited nonlinear properties, with 49.4 in the nonlinear coefficient and 0.21 m A/cm2 in the leakage current density. The dielectric constant increased greatly from 440.1 to 2197.2 with increasing sintering temperature from 875 to 950 °C; however, the dissipation factor exhibited a fluctuation between 0.237 and 0.5. These ceramic compositions and sintering conditions can be applied to the development of advanced multiplayer varistors with silver as an inner electrode.展开更多
We report on stacking fault （SF） detection in free-standing cubic-SiC epilayer by the Raman measurements. The epilayer with enhanced SFs is heteroepitaxially grown by low pressure chemical vapour deposition on a Si...We report on stacking fault （SF） detection in free-standing cubic-SiC epilayer by the Raman measurements. The epilayer with enhanced SFs is heteroepitaxially grown by low pressure chemical vapour deposition on a Si（100） substrate and is released in KOH solution by micromechanical manufacture, on which the Raman measurements are performed in a back scattering geometry. The TO line of the Raman spectra is considerably broadened and distorted. We discuss the influence of SFs on the intensity profiles of TO mode by comparing our experimental data with the simulated results based on the Raman bond polarizability （BP） model in the framework of linearchain concept. Cood agreement with respect to the linewidth and disorder-induced peak shift is found by assuming the mean distance of the SFs to be 11 A in the BP model.展开更多
We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs(001)matrix.It is shown that the formation of InAs dots with 1 monolayer(ML)height leads to localization of excit...We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs(001)matrix.It is shown that the formation of InAs dots with 1 monolayer(ML)height leads to localization of exciton under certain submonolayer InAs coverage,which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures.展开更多
CuIn2n+1 S3n+2 crystals were synthesized by horizontal Bridgman method using high purity copper, indium, sulfur elements. The phases and crystallographic structure of the CuIn2n+1S3n+2 crystals were analyzed by X-ray ...CuIn2n+1 S3n+2 crystals were synthesized by horizontal Bridgman method using high purity copper, indium, sulfur elements. The phases and crystallographic structure of the CuIn2n+1S3n+2 crystals were analyzed by X-ray diffraction (XRD) and the composition of the material powders was determined using the energy dispersive X-ray analysis (EDX). Measurement data revealed that CuIn2n+1S3n+2 materials have not the same structure. In fact, CuInS2 and CuIn3S5 crystallize in the chalcopyrite structure whereas CuIn5S8, CuIn7S11 and CuIn11S17 crystallize in the cubic spinel structure.展开更多
This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor （HEMT） and AlAs/GaAs resonant tunnelling diode （RTD） are epitaxially grown by molecular beam epitaxy （MBE） in turn on a G...This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor （HEMT） and AlAs/GaAs resonant tunnelling diode （RTD） are epitaxially grown by molecular beam epitaxy （MBE） in turn on a GaAs substrate. An Alo.24Gao.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-μm gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.展开更多
We report a resonant tunnelling diode （RTD） small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabri...We report a resonant tunnelling diode （RTD） small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current-voltage （I-V） characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunnelling process, is also calculated to be 2.09ps.展开更多
基金supported by National Natural Science Foundation of China (Grant Nos. 62204104, 42005138, 12274190, 12274189, 62275115)Shandong Province High Education Youth Innovation Team Program (Grant No. 2023KJ210)Science and Technology Program of Yantai (Grant No. 2023JCYJ047)。
文摘Due to advantages of high power-conversion efficiency(PCE), large power-to-weight ratio(PWR), low cost and solution processibility, flexible perovskite solar cells(f-PSCs) have attracted extensive attention in recent years. The PCE of f-PSCs has developed rapidly to over 25%, showing great application prospects in aerospace and wearable electronic devices. This review systematically sorts device structures and compositions of f-PSCs, summarizes various methods to improve its efficiency and stability recent years. In addition, the applications and potentials of f-PSCs in space vehicle and aircraft was discussed. At last, we prospect the key scientific and technological issues that need to be addressed for f-PSCs at current stage.
文摘The effect of Tb407 on electrical behavior of the ZnO-Pr6Oll-based varistor ceramics was investigated. Microstructural analysis indicated that the addition of Tb407 decreased average grain size from 3.6 to 3.2 and increased the sintered density from 5.58 to 5.68 g/cm3. As the amount ofTb407 increased, the breakdown field increased from 9393 to 12437 V/cm and the nonlinear coefficient increased from 50 to 65. The varistor ceramics added with 0.5 mol.% in the amount of Tb407 exhibited an excellent stability by exhibiting 0. 1% in the variation rate of the breakdown field, 0% in the variation rate of the nonlinear coefficient, and 8.8% in the variation rate of the leakage current density for DC-accelerated aging stress of 0.85 E1 mA/115 ℃/24 h.
文摘The electrical properties and ageing behavior of the rare earths （Pr6O11-Er2O3-Y2O3）-doped ZnO varistor ceramics were systematically investigated at sintering temperature range of 1335-1350°C. With an increase in the sintering temperature, the sintered density increased from 5.41 to 5.64g/cm3 and the average grain size increased from 5.8 to 7.9μm. The varistor properties and ageing behavior were significantly affected by small sintering temperature range of 1335-1350°C. The breakdown field noticeably decreased from 5767 to 3628V/cm with an increase in the sintering temperature. The varistor ceramics exhibited the highest nonlinear coefficient （43.2） at the sintering temperature of 1340°C. The varistor ceramics sintered at 1350°C exhibited a surprisingly excellent stability by exhibiting 0.3% in the variation rate of the breakdown field and 0.3% in the variation rate of the nonlinear coefficient for ageing stress of 0.95 E1mA/150°C/24 h.
文摘The effect of sintering temperature on microstructure, electrical properties, and pulse aging behavior of （V2O5-Mn3O4-Er2O3）-doped zinc oxide varistor ceramics was systematically studied. When the sintering temperature increased, the average grain size increased from 6.1 to 8.7μm and the sintered density decreased from 5.52 to 5.43 g/cm3. The breakdown field decreased from 3856 to 922 V/cm with an increase in the sintering temperature up to 900 °C, whereas a further increase to 2352 V/cm at 925 °C. The nonlinear coefficient increased pronouncedly from 4.6 to 30.0 with an increase in the sintering temperature. The varistor ceramics sintered at 850 °C exhibited the best clamping characteristics, with the clamp voltage ratio of the range of 2.22-2.88 for pulse current of 1-25 A. The varistor ceramics sintered at 925 °C exhibited the strongest stability, with %ΔE1 mA/cm2=-8.8% after applying the multi-pulse current of 25 A.
基金Project supported by the National Natural Science Foundation of China （Grant No. 60866001）, the Special Project for Senior Researcher of Guizhou Organization Department （Grnat No. TZJF 2006.10）, Doctor Foundation of Guizhou University, the Innovation Fund of Guizhou University （Grant No. 2011008）, the Science and Technological Project for Scholar Abroad, Guizhou Province （Grant No. [2007]03）, and the Guizhou Science and Technology Foundation （Grant No. J[200712176）.
文摘Anisotropic evolution of the step edges on the compressive-strained In0.2Ga0.8As/GaAs（001） surface has been investigated by scanning tunneling microscopy （STM）. The experiments suggest that step edges are indeed sinuous and protrude somewhere a little way along the [110] direction, which is different from the classical waviness predicted by the theoretical model. We consider that the monatomic step edges undergo a morphological instability induced by the anisotropic diffusion of adatoms on the terrace during annealing, and we improve a kinetic model of step edge based on the classical Burton Cabrer-Frank （BCF） model in order to determine the normal velocity of step enlargement. The results show that the normal velocity is proportional to the arc length of the peninsula, which is consistent with the first result of our kinetic model. Additionally, a significant phenomenon is an excess elongation along the [110] direction at the top of the peninsula with a higher aspect ratio, which is attributed to the restriction of diffusion lengths.
文摘AlN/GaN superlattice buffer is inserted between GaN epitaxiai layer and Si substrate before epitaxiai growth of GaN layer. High-quality and crack-free GaN epitaxiai layers can be obtained by inserting AlN/GaN superlattice buffer layer. The influence of AlN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by using AlN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.
文摘The microstructure, electrical and dielectric properties, and DC-accelerated aging of the ZPCCA （ZnO-Pr6O11-CoO- Cr203-A1203） ceramics were investigated with various contents of Er203. The ceramic phases consisted of a bulk phase of ZnO grains, and a minor secondary phase of mixture of Pr6O11 and Er203. The increase of the content of doped Er203 increased the densities of sintered pellet from 5.66 to 5.85 g/cm3, and decreased the average grain size from 9.6 to 6.3 μm. With the increase of the content of doped Er203, the breakdown field increased from 2390 to 4530 V/cm, and the nonlinear coefficient increased from 28.4 to 39.1. The sample doped with 0.25 mol.% Er203 exhibited the strongest electrical stability; variation rates for the breakdown field measured at 1.0 mA/cm2, and for the non-ohmic coefficient were -3.4% and -23,8%, respectively, after application of a stress of 0.95 Eu/125 ℃/24 h.
文摘The effect of small changes in sintering temperature on microstructure, electrical properties, dielectric characteristics, and degradation behavior of V-Mn-Nb-Gd co-doped zinc oxide ceramics was investigated. With the increase of sintering temperature, the densities of the sintered pellets decreased from 5.54 to 5.42 g/cm3 and the average grain size increased from 4.1 to 11.7 μm. The breakdown field(E1 m A) decreased noticeably from 7138 to 920 V/cm with the increase of sintering temperature. The varistor ceramics sintered at 900 ℃ exhibited excellent nonohmic properties, which were 66 for the nonohmic coefficient and 77 μA/cm2 for the leakage current density. Concerning stability, the varistors sintered at 900 ℃ exhibited the strongest accelerated degradation characteristics, with ΔE1 mA =-9.2% for DC accelerated degradation stress of 0.85 E1 m A at 85 °C for 24 h.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60406010 and 0713170000, and National Hi-Teeh Researeh and Development Programme under Grant No 2006AA04Z339.
文摘Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition （LPCVD） with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction （XRD） patterns indicate that the deposited films are highly textured （111） orientation. The surface morphology and roughness are determined by scanning electron microscopy （SEM） and atomic force microscopy （AFM）. The surface features are spherulitic texture with average grain size of 100nm, and the rms roughness is 20nm （AFM 5×5 μm images）. Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems （MEMS） devices such as SiC based filters.
文摘This research work aims to reduce the band gap of thin layers of titanium oxide by the incorporation of graphene oxide sheets. Thin layers of the TiO2-GO composites were prepared on a glass substrate by the spin-coating technique from GO and an aqueous solution of TiO2. A significant decrease in optical band gap was observed at the TiO2-GO compound compared to that of pure TiO2. Samples as prepared were characterized using XRD, SEM and UV-visible spectra. XRD analysis revealed the amorphous nature of the deposited layers. Scanning electron microscope reveals the dispersion of graphene nanofiles among titanium oxide nanoparticles distributed at the surface with an almost uniform size distribution. The band gap has been calculated and is around 2 eV after incorporation of Graphene oxide. The chemical bond C-Ti between the titanium oxide and graphene sheets is at the origin of this reduction.
文摘Using the transfer matrix method approach (TMM), the present paper attempts to determine the optical properties of quasi-periodic symmetric one-dimensional photonic systems. In addition, it studies hybrid hetero-structure systems constructed by using periodic and quasi-periodic multilayer systems. The effect of symmetry applied to symmetric multilayer systems results in the appearance of optical windows at the photonic band gaps (PBG) of the system. The use of hybrid symmetric systems, at normal incidence in the visible range, show that the complete photonic band gap is the sum of bands from individual systems. The results show also that the width of the PBG depends on the parameters and nature of the built system.
基金financially supported by the National Natural Science Foundation of China (Nos. 60406004, 60890193, and 60736033)the National Key Micrometer/Nanometer Processing Laboratory
文摘In this article, a detailed analysis of the wet- etching technique for AIGaN/GaN heterostructure using dry thermal oxidation followed by a wet alkali etching was performed. The experimental results show that the oxida- tion plays a key role in the wet-etching method and the etching depth is mainly determined by the oxidation tem- perature and time. The correlation of etching roughness with oxidation time and temperature was investigated. It is found that there exists a critical oxidation temperature in the oxidation process. Finally, a physical explanation of the oxidation procedure for A1GaN layer was given.
文摘The effect of sintering temperature on microstructure and varistor properties of Zn-V-O-based ceramics incorporated with Mn-Nb-Tb was investigated. The results showed that the increase of sintering temperature in the range from 875 to 950 °C decreased the densities of sintered pellets in the range of 5.55 to 5.45 g/cm3 and increased the average grain size in the range of 4.1 to 8.8 ？m. The breakdown field decreased noticeably from 7443 to 1064 V/cm with increasing sintering temperature from 875 to 950 °C. The varistor ceramics sintered at 900 ？C exhibited nonlinear properties, with 49.4 in the nonlinear coefficient and 0.21 m A/cm2 in the leakage current density. The dielectric constant increased greatly from 440.1 to 2197.2 with increasing sintering temperature from 875 to 950 °C; however, the dissipation factor exhibited a fluctuation between 0.237 and 0.5. These ceramic compositions and sintering conditions can be applied to the development of advanced multiplayer varistors with silver as an inner electrode.
基金Supported by the National Natural Science Foundation of China under Grant No 60406010.
文摘We report on stacking fault （SF） detection in free-standing cubic-SiC epilayer by the Raman measurements. The epilayer with enhanced SFs is heteroepitaxially grown by low pressure chemical vapour deposition on a Si（100） substrate and is released in KOH solution by micromechanical manufacture, on which the Raman measurements are performed in a back scattering geometry. The TO line of the Raman spectra is considerably broadened and distorted. We discuss the influence of SFs on the intensity profiles of TO mode by comparing our experimental data with the simulated results based on the Raman bond polarizability （BP） model in the framework of linearchain concept. Cood agreement with respect to the linewidth and disorder-induced peak shift is found by assuming the mean distance of the SFs to be 11 A in the BP model.
文摘We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs(001)matrix.It is shown that the formation of InAs dots with 1 monolayer(ML)height leads to localization of exciton under certain submonolayer InAs coverage,which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures.
文摘CuIn2n+1 S3n+2 crystals were synthesized by horizontal Bridgman method using high purity copper, indium, sulfur elements. The phases and crystallographic structure of the CuIn2n+1S3n+2 crystals were analyzed by X-ray diffraction (XRD) and the composition of the material powders was determined using the energy dispersive X-ray analysis (EDX). Measurement data revealed that CuIn2n+1S3n+2 materials have not the same structure. In fact, CuInS2 and CuIn3S5 crystallize in the chalcopyrite structure whereas CuIn5S8, CuIn7S11 and CuIn11S17 crystallize in the cubic spinel structure.
文摘This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor （HEMT） and AlAs/GaAs resonant tunnelling diode （RTD） are epitaxially grown by molecular beam epitaxy （MBE） in turn on a GaAs substrate. An Alo.24Gao.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-μm gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.
文摘We report a resonant tunnelling diode （RTD） small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current-voltage （I-V） characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunnelling process, is also calculated to be 2.09ps.
