Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homoge...Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homogeneous oxide semiconduc-tors.Herein,we propose the design of complementary inverter based on full ZnO TFTs.Li-N dual-doped ZnO(ZnO:(Li,N))acts as the p-type channel and Al-doped ZnO(ZnO:Al)serves as the n-type channel for fabrication of TFTs,and then the complemen-tary inverter is produced with p-and n-type ZnO TFTs.The homogeneous ZnO-based complementary inverter has typical volt-age transfer characteristics with the voltage gain of 13.34 at the supply voltage of 40 V.This work may open the door for the development of oxide complementary inverters for logic circuits.展开更多
In recent years,research focusing on synaptic device based on phototransistors has provided a new method for asso-ciative learning and neuromorphic computing.A TiO_(2)/AlGaN/GaN heterostructure-based synaptic phototra...In recent years,research focusing on synaptic device based on phototransistors has provided a new method for asso-ciative learning and neuromorphic computing.A TiO_(2)/AlGaN/GaN heterostructure-based synaptic phototransistor is fabricated and measured,integrating a TiO_(2)nanolayer gate and a two-dimensional electron gas(2DEG)channel to mimic the synaptic weight and the synaptic cleft,respectively.The maximum drain to source current is 10 nA,while the device is driven at a reverse bias not exceeding-2.5 V.A excitatory postsynaptic current(EPSC)of 200 nA can be triggered by a 365 nm UVA light spike with the duration of 1 s at light intensity of 1.35μW·cm^(-2).Multiple synaptic neuromorphic functions,including EPSC,short-term/long-term plasticity(STP/LTP)and paried-pulse facilitation(PPF),are effectively mimicked by our GaN-based het-erostructure synaptic device.In the typical Pavlov’s dog experiment,we demonstrate that the device can achieve"retraining"process to extend memory time through enhancing the intensity of synaptic weight,which is similar to the working mecha-nism of human brain.展开更多
Despite great progress in developing mode-selective light emission technologies based on self-emitting materials,few rewritable displays with modeselective multiple light emissions have been demonstrated.Herein,we pre...Despite great progress in developing mode-selective light emission technologies based on self-emitting materials,few rewritable displays with modeselective multiple light emissions have been demonstrated.Herein,we present a rewritable triple-mode light-emitting display enabled by stimuli-interactive fluorescence(FL),room-temperature phosphorescence(RTP),and electroluminescence(EL).The display comprises coplanar electrodes separated by a gap,a polymer composite with FL inorganic phosphors(EL/FL layer),and a polymer composite with solvent-responsive RTP additives(RTP layer).Upon 254 nm UV exposure,a dual-mode emission of RTP and FL occurs from the RTP and EL/FL layers,respectively.When a polar liquid,besides water,is applied on the display and an AC field is applied between the coplanar electrodes,EL from the EL/FL layer is triggered,and the display operates in a triple mode.Interestingly,when water is applied to the display,the RTP mode is deactivated,rendering the display to operate in a dual mode of FL and EL.By manipulating the evaporation of the applied polar liquids and water,the mode-selective light emission of FL,RTP,and EL is rewritable in the triple-mode display.Additionally,a high-security full-color information encryption display is demonstrated,wherein the information of digital numbers,letters,and Morse code encoded in one optical mode is only deciphered when properly matched with that encoded in the other two modes.Thus,this article outlines a strategy to fulfill the substantial demand for high-security personalized information based on room-temperature multi-light-emitting displays.展开更多
The transition of cobalt ions located at tetrahedral sites will produce strong absorption in the visible and nearinfrared regions,and is expected to work in a passively Q-switched solid-state laser at the eye-safe wav...The transition of cobalt ions located at tetrahedral sites will produce strong absorption in the visible and nearinfrared regions,and is expected to work in a passively Q-switched solid-state laser at the eye-safe wavelength of 1.5μm.In this study,Co^(2+)ions were introduced into the wide bandgap semiconductor material ZnGa_(2)O_(4),and large-sized and high-quality Co^(2+)-doped ZnGa_(2)O_(4)crystals with a volume of about 20 cm^(3)were grown using the vertical gradient freeze(VGF)method.Crystal structure and optical properties were analyzed using X-ray powder diffraction(XRD),X-ray photoelectron spectroscopy(XPS),and absorption spectroscopy.XRD results show that the Co^(2+)-doped ZnGa_(2)O_(4)crystal has a pure spinel phase without impurity phases and the rocking curve full width at half maximum(FWHM)is only 58 arcsec.The concentration of Co^(2+)in Co^(2+)-doped ZnGa_(2)O_(4)crystals was determined to be 0.2 at.%by the energy dispersive X-ray spectroscopy.The optical band gap of Co^(2+)-doped ZnGa_(2)O_(4)crystals is 4.44 eV.The optical absorption spectrum for Co^(2+)-doped ZnGa_(2)O_(4)reveals a prominent visible absorption band within 550−670 nm and a wide absorption band spanning from 1100 to 1700 nm.This suggests that the Co^(2+)ions have substituted the Zn^(2+)ions,which are typically tetrahedrally coordinated,within the lattice structure of ZnGa_(2)O_(4).The visible region's absorption peak and the near-infrared broad absorption band are ascribed to the^(4)A_(2)(4F)→^(4)T_(1)(4P)and 4A2(4F)→^(4)T_(1)(4F)transitions,respectively.The optimal ground state absorption cross section was determined to be 3.07×10^(−19)cm^(2)in ZnGa_(2)O_(4),a value that is comparatively large within the context of similar materials.This finding suggests that ZnGa_(2)O_(4)is a promising candidate for use in near-infrared passive Q-switched solid-state lasers.展开更多
Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN/GaN high-electron-mobility transistors. Low ohmic contact resistance of 0.15Ω.mm is obtained. It is found that the s...Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN/GaN high-electron-mobility transistors. Low ohmic contact resistance of 0.15Ω.mm is obtained. It is found that the sidewall obliquity near the regrown interface induced by the plasma dry etching has great influence on the total contact resistance. The fabricated device with a 100-nm T-shaped gate demonstrates a maximum drain current density of 0.95 A/mm at Vgs = 1 V and a maximum peak extrinsic transcondutance Gm of 216mS/ram. Moreover, a current gain cut-off frequency fT of 115 GHz and a maximum oscillation frequency fmax of 127 GHz are achieved.展开更多
A simple and easily operated technique was developed to fabricate GaN films. GaN films possessing hexagonal wurtzite structure were fabricated on Si(111) substrates with ZnO buffer layers through nitriding Ga2O3 films...A simple and easily operated technique was developed to fabricate GaN films. GaN films possessing hexagonal wurtzite structure were fabricated on Si(111) substrates with ZnO buffer layers through nitriding Ga2O3 films in the tube quartz furnace. ZnO buffer layers and Ga3O3 films were deposited on Si substrates in turn by using radio frequency magnetron sputtering system before the nitriding process. The structure and composition of GaN films were studied by X-ray diffraction, selected area electron diffraction and Fourier transform infrared spectrophotometer. The morphologies of GaN films were studied by scanning electron microscopy. The results show that ZnO buffer layer improves the crystalline quality and the surface morphology of the films relative to the films grown directly on silicon substrates. The measurement result of room-temperature photoluminescence spectrum indicates that the photoluminescence peaks locate at 365 nm and 422 nm.展开更多
A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),S...A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),SiC superjuction MOSFET(SJ MOSFET)and the conventional SiC MOSFET in this article.In the proposed SiC Hk-SJ-SBD MOSFET,under the combined action of the p-type region and the Hk dielectric layer in the drift region,the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance(Ron,sp).The integrated Schottky barrier diode(SBD)also greatly improves the reverse recovery performance of the device.TCAD simulation results indicate that the Ron,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm^(2)with a 2240 V breakdown voltage(BV),which is more than 72.4%,23%,5.6%lower than that of the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET with the 1950,2220,and 2220V BV,respectively.The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC,which are greatly reduced by more than 74%and 94%in comparison with those of all the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET,due to the integrated SBD in the proposed MOSFET.And the trade-off relationship between the Ron,sp and the BV is also significantly improved compared with that of the conventional MOSFET,Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature,respectively.In addition,compared with conventional SJ SiC MOSFET,the proposed SiC MOSFET has better immunity to charge imbalance,which may bring great application prospects.展开更多
The unexplored terahertz (THz) region involves important phenomena of both fundamental and applied natures. Examples include phonon interactions, rotational transitions and intermolecular dynamics. Frequency tunable h...The unexplored terahertz (THz) region involves important phenomena of both fundamental and applied natures. Examples include phonon interactions, rotational transitions and intermolecular dynamics. Frequency tunable high power THz wave generation has been successfully achieved utilizing lattice resonance of LiNbO3 and GaP crystals, respectively. Semiconductor devices utilizing electron tunneling effect have also been developed.展开更多
High thickness uniformity and large-scale films of α-Ga_(2)O_(3) are crucial factors for the development of power devices.In this work, a high-quality 2-inch α-Ga_(2)O_(3) epitaxial film on c-plane sapphire substrat...High thickness uniformity and large-scale films of α-Ga_(2)O_(3) are crucial factors for the development of power devices.In this work, a high-quality 2-inch α-Ga_(2)O_(3) epitaxial film on c-plane sapphire substrates was prepared by the mist-CVD method.The growth rate and phase control mechanisms were systematically investigated. The growth rate of the α-Ga_(2)O_(3) films was limited by the evaporation of the microdroplets containing gallium acetylacetonate. By adjusting the substrate position(z) from 80 to 50 mm, the growth rate was increased from 307 nm/h to 1.45 μm/h when the growth temperature was fixed at 520 °C.When the growth temperature exceeded 560 °C, ε-Ga_(2)O_(3) was observed to form at the edges of 2-inch sapphire substrate.Phase control was achieved by adjusting the growth temperature. When the growth temperature was 540 °C and the substrate position was 50 mm, the full-width at half maximum(FWHM) of the rocking curves for the(0006) and(10-14) planes were 0.023° and 1.17°. The screw and edge dislocations were 2.3 × 10~6 and 3.9 × 10~(10)cm~(-2), respectively. Furthermore, the bandgaps and optical transmittance of α-Ga_(2)O_(3) films grown under different conditions were characterized utilizing UV-visible and near-IR scanning spectra.展开更多
Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor dep...Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor deposition(MOCVD) on an Fedoped semi-insulating(010) Ga_2O_3 substrate. The structure consisted of a 400 nm unintentionally doped(UID) Ga_2O_3 buffer layer and an 80 nm Si-doped channel layer. A high k HfO_2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at V_(gs) of 3 V. The off-state current was as low as 7.1 ×10^(-11) A/mm, and the drain current I_(ON)/I_(OFF) ratio reached 10~9. The transistors exhibited three-terminal off-state breakdown voltages of 450 and 550 V, corresponding to gate-to-drain spacing of 4 and 8 μm, respectively.展开更多
In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improv...In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance.The breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V.The maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the AlGaN/GaN HEMTs exceed 30 and 20 GHz,respectively.The results demonstrate the potential of AlGaN/GaN HEMTs on freestanding GaN substrates for microwave power applications.展开更多
A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated.Under the irradiation of a 4×4 mm^(2) planar solid 63Ni source with an activity of 2 mCi,the open−circuit voltage Vo...A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated.Under the irradiation of a 4×4 mm^(2) planar solid 63Ni source with an activity of 2 mCi,the open−circuit voltage Voc of the fabricated single 2×2 mm^(2) cell reaches as high as 1.62 V,the short−circuit current density Jsc is measured to be 16nA/cm^(2).The microbattery has a fill factor of 55%,and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%.The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.展开更多
Aiming at the problem that the lattice feature exceeds the view field of the scanning electron microscope(SEM)measuring system,a new lattice measuring method is proposed based on integral imaging technology.When the s...Aiming at the problem that the lattice feature exceeds the view field of the scanning electron microscope(SEM)measuring system,a new lattice measuring method is proposed based on integral imaging technology.When the system works,the SEM measuring system is equivalent to an integral image acquisition system.Firstly,a lattice measuring method is researched based on integral imaging theory.Secondly,the system parameters are calibrated by the VLSI lattice standard.Finally,the value of the lattice standard to be tested is determined based on the calibration parameters and the lattice measuring algorithm.The experimental results show that,compared with the traditional electron microscope measurement method,the relative error of the measured value of the algorithm is maintained within 0.2%,with the same level of measurement accuracy,but it expands the field of view of the electron microscope measurement system,which is suitable for the measurement of samples under high magnification.展开更多
As an ultra-precise instrument to characterize nano-morphology and structure,the morphology of atomic force microscopy(AFM)tip directly affects the quality of the scanned images,which in turn affects the measurement a...As an ultra-precise instrument to characterize nano-morphology and structure,the morphology of atomic force microscopy(AFM)tip directly affects the quality of the scanned images,which in turn affects the measurement accuracy.In order to accurately characterize three-dimensional information of AFM tip,a reconstruction method of AFM tip using 2μm lattice sample is researched.Under normal circumstances,an array of micro-nano structures is used to reconstruct the morphology of AFM tip.Therefore,the 2μm lattice sample was developed based on semiconductor technology as a characterization tool for tip reconstruction.The experimental results show that the 2μm lattice sample has good uniformity and consistency,and can be applied to the tip reconstruction method.In addition,the reconstruction method can accurately obtain the morphology of AFM tip,effectively eliminate the influence of the"probe effect"on the measurement results,and improve measurement accuracy.展开更多
With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current （DC） arc jet chemical vapor deposition （CVD） are considered to be one of the most pro...With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current （DC） arc jet chemical vapor deposition （CVD） are considered to be one of the most promising materials for high-frequency and high-power electronic devices. In this paper, high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD, and then, the p-type surface conductive layer with the sheet carrier density of 10^11-10^13 cm-2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min. Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode, respectively, afterwards, they were treated by rapid vacuum annealing at different temperatures. The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method （TLM）. Due to the formation of Ti-related carbide at high temperature, the specific contact resistance of Ti/Au contact gradually decreases to 9.95 × 10^-5 Ω-cm2 as the temperature increases to 820℃. However, when the annealing temperature reaches 850℃, the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au. As for the as-deposited Au contact, it shows an ohmic contact. After annealing treatment at 550℃, low specific contact resistance was detected for Au contact, which is derived from the enhancement of interdiffusion between Au and diamond films.展开更多
Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1 × 10^6 Qcm were achieved by vanadium doping during sublimation. Secondary-ion-mass-spectrometry （SIMS） was employed to determine the con...Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1 × 10^6 Qcm were achieved by vanadium doping during sublimation. Secondary-ion-mass-spectrometry （SIMS） was employed to determine the concentration of impurities in the crystals, such as B, AI, V and N. These results indicated that the concentration of nitrogen and aluminum kept on decreasing and the concentration of B and V was almost constant during the whole growth. An inner crucible was used to control the exhausting of vanadium, which made the uniformity of the high resistivity （〉1×10^6 Ωcm） in the wafer up to 80%. High-performance AlGaN/GaN high-electronmobility-transistor （HEMT） materials and devices were grown and fabricated on semi-insulating 6H-SiC sub- strates. The two-dimensional electron gas （2DEG） mobility at room-temperature was 1795 cm^2/V-s. The charge carrier concentration of the substrate determined by capacitance-voltage （C-V） test was 7.3×10^15 cm^-3. The device with a gate width of I mm exhibits a maximum output power of 5.5 W at 8 GHz, which proves the semi-insulating property of the substrates indirectly.展开更多
The effect of an initially grown high-temperature A1N buffer （HT-A1N） layer＇s thickness on the quality of an A1N epilayer grown on sapphire substrate by metalorganic chemical vapor deposition （MOCVD） in a two-ste...The effect of an initially grown high-temperature A1N buffer （HT-A1N） layer＇s thickness on the quality of an A1N epilayer grown on sapphire substrate by metalorganic chemical vapor deposition （MOCVD） in a two-step growth process is investigated. The characteristics of A1N epilayers are analyzed by using triple-axis crystal X-ray diffraction （XRD） and atomic force microscopy （AFM）. It is shown that the crystal quality of the A1N epilayer is closely related to its correlation length. The correlation length is determined by the thickness of the initially grown HT-A1N buffer layer. We find that the optimal HT-A1N buffer thickness for obtaining a high-quality A1N epilayer grown on sapphire substrate is about 20 nm.展开更多
An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapt...An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapter board technology.Four layers of high-resistance silicon substrate stack packaging are implemented based on the wafer-level gold-gold bonding process.Each layer adopts though silicon via(TSV)technology to realize signal interconnection.A core monolithic integrated microwave chip(MMIC)is embedded in the silicon cavity,and the silicon-based filter is integrated with the high-resistance silicon substrate.The interconnect line,cavity and filter of the silicon-based adapter board are designed with AutoCAD,and HFSS is adopted for 3D electromagnetic field simulation.According to the measured results,the radio frequency(RF)of the mixing multi-function chip is 40-44 GHz and its intermediate frequency(IF)can cover the Ku band with a chip size of 10 mm×11 mm×1 mm.The multiplier multi-function chip operates at 16-20 GHz.The fundamental suppression is greater than 50 dB and the second harmonic suppression is better than 40 dB with a chip size of 8 mm×8 mm×1 mm.The cascaded fully assembled mixing component achieves a spur of better than-50 dBc and a gain of better than 15 dB.展开更多
New progress in the post researches on space grown materials, the development of experiment facilities, and the experiment techniques for space materials researches were introduced. Besides the conventional materials,...New progress in the post researches on space grown materials, the development of experiment facilities, and the experiment techniques for space materials researches were introduced. Besides the conventional materials, such as alloys, semiconductors, and optical crystals, new materials have also been prepared on the ground.展开更多
The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor（HEMT） becomes one of the most important reliability issues with the downscaling of feature size.In this p...The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor（HEMT） becomes one of the most important reliability issues with the downscaling of feature size.In this paper,the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K.Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current.By comparing the experimental data with the numerical transport models,it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current.However,good agreement is found between the experimental data and the two-dimensional variable range hopping（2D-VRH） model.Therefore,it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer.Moreover,the activation energy of surface leakage current is extracted,which is around 0.083 eV.Finally,the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied.It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV,which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper.展开更多
基金supported by Zhejiang Provincial Natural Science Foundation of China(No.LZ24E020001).
文摘Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homogeneous oxide semiconduc-tors.Herein,we propose the design of complementary inverter based on full ZnO TFTs.Li-N dual-doped ZnO(ZnO:(Li,N))acts as the p-type channel and Al-doped ZnO(ZnO:Al)serves as the n-type channel for fabrication of TFTs,and then the complemen-tary inverter is produced with p-and n-type ZnO TFTs.The homogeneous ZnO-based complementary inverter has typical volt-age transfer characteristics with the voltage gain of 13.34 at the supply voltage of 40 V.This work may open the door for the development of oxide complementary inverters for logic circuits.
基金supported by the National Key R&D Program of China(2021YFB3601000,2021YFB3601004)the National Key R&D Program of China(2022YFB3604702)the Chinese Academy of Sciences.
文摘In recent years,research focusing on synaptic device based on phototransistors has provided a new method for asso-ciative learning and neuromorphic computing.A TiO_(2)/AlGaN/GaN heterostructure-based synaptic phototransistor is fabricated and measured,integrating a TiO_(2)nanolayer gate and a two-dimensional electron gas(2DEG)channel to mimic the synaptic weight and the synaptic cleft,respectively.The maximum drain to source current is 10 nA,while the device is driven at a reverse bias not exceeding-2.5 V.A excitatory postsynaptic current(EPSC)of 200 nA can be triggered by a 365 nm UVA light spike with the duration of 1 s at light intensity of 1.35μW·cm^(-2).Multiple synaptic neuromorphic functions,including EPSC,short-term/long-term plasticity(STP/LTP)and paried-pulse facilitation(PPF),are effectively mimicked by our GaN-based het-erostructure synaptic device.In the typical Pavlov’s dog experiment,we demonstrate that the device can achieve"retraining"process to extend memory time through enhancing the intensity of synaptic weight,which is similar to the working mecha-nism of human brain.
基金supported by the Creative Materials Discovery Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Science and ICT(MSIT)(2022M3C1A3081211)This study was also supported by a grant from the NRF funded by MSIT(RS-2023-00208577)+1 种基金This study was financially supported by the Nano&Material Technology Development Program through the NRF funded by MSIT(RS-2024-00451891 and RS-2024-00416938)by the Open Resource Research Program of the Korea Institute of Science and Technology(2E32961).
文摘Despite great progress in developing mode-selective light emission technologies based on self-emitting materials,few rewritable displays with modeselective multiple light emissions have been demonstrated.Herein,we present a rewritable triple-mode light-emitting display enabled by stimuli-interactive fluorescence(FL),room-temperature phosphorescence(RTP),and electroluminescence(EL).The display comprises coplanar electrodes separated by a gap,a polymer composite with FL inorganic phosphors(EL/FL layer),and a polymer composite with solvent-responsive RTP additives(RTP layer).Upon 254 nm UV exposure,a dual-mode emission of RTP and FL occurs from the RTP and EL/FL layers,respectively.When a polar liquid,besides water,is applied on the display and an AC field is applied between the coplanar electrodes,EL from the EL/FL layer is triggered,and the display operates in a triple mode.Interestingly,when water is applied to the display,the RTP mode is deactivated,rendering the display to operate in a dual mode of FL and EL.By manipulating the evaporation of the applied polar liquids and water,the mode-selective light emission of FL,RTP,and EL is rewritable in the triple-mode display.Additionally,a high-security full-color information encryption display is demonstrated,wherein the information of digital numbers,letters,and Morse code encoded in one optical mode is only deciphered when properly matched with that encoded in the other two modes.Thus,this article outlines a strategy to fulfill the substantial demand for high-security personalized information based on room-temperature multi-light-emitting displays.
基金the support by the fund of the National Key Research and Development Program of China (Grant No. 2024YFA1208800)National Natural Science Foundation of China (NSFC) (Grant No. U23A20358)+2 种基金Natural Science Foundation of Shandong Province (Grant Nos. ZR2023ZD05 and 2022TSGC2120)the Shenzhen Fundamental Research Program (Grant No. GJHZ20220913142605011)Xiaomi Foundation/Xiaomi Young Talents Program
文摘The transition of cobalt ions located at tetrahedral sites will produce strong absorption in the visible and nearinfrared regions,and is expected to work in a passively Q-switched solid-state laser at the eye-safe wavelength of 1.5μm.In this study,Co^(2+)ions were introduced into the wide bandgap semiconductor material ZnGa_(2)O_(4),and large-sized and high-quality Co^(2+)-doped ZnGa_(2)O_(4)crystals with a volume of about 20 cm^(3)were grown using the vertical gradient freeze(VGF)method.Crystal structure and optical properties were analyzed using X-ray powder diffraction(XRD),X-ray photoelectron spectroscopy(XPS),and absorption spectroscopy.XRD results show that the Co^(2+)-doped ZnGa_(2)O_(4)crystal has a pure spinel phase without impurity phases and the rocking curve full width at half maximum(FWHM)is only 58 arcsec.The concentration of Co^(2+)in Co^(2+)-doped ZnGa_(2)O_(4)crystals was determined to be 0.2 at.%by the energy dispersive X-ray spectroscopy.The optical band gap of Co^(2+)-doped ZnGa_(2)O_(4)crystals is 4.44 eV.The optical absorption spectrum for Co^(2+)-doped ZnGa_(2)O_(4)reveals a prominent visible absorption band within 550−670 nm and a wide absorption band spanning from 1100 to 1700 nm.This suggests that the Co^(2+)ions have substituted the Zn^(2+)ions,which are typically tetrahedrally coordinated,within the lattice structure of ZnGa_(2)O_(4).The visible region's absorption peak and the near-infrared broad absorption band are ascribed to the^(4)A_(2)(4F)→^(4)T_(1)(4P)and 4A2(4F)→^(4)T_(1)(4F)transitions,respectively.The optimal ground state absorption cross section was determined to be 3.07×10^(−19)cm^(2)in ZnGa_(2)O_(4),a value that is comparatively large within the context of similar materials.This finding suggests that ZnGa_(2)O_(4)is a promising candidate for use in near-infrared passive Q-switched solid-state lasers.
基金Supported by the National Natural Science Foundation of China under Grant No 61306113
文摘Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN/GaN high-electron-mobility transistors. Low ohmic contact resistance of 0.15Ω.mm is obtained. It is found that the sidewall obliquity near the regrown interface induced by the plasma dry etching has great influence on the total contact resistance. The fabricated device with a 100-nm T-shaped gate demonstrates a maximum drain current density of 0.95 A/mm at Vgs = 1 V and a maximum peak extrinsic transcondutance Gm of 216mS/ram. Moreover, a current gain cut-off frequency fT of 115 GHz and a maximum oscillation frequency fmax of 127 GHz are achieved.
基金Projects(90301002 90201025) supported by the National Natural Science Foundation of China
文摘A simple and easily operated technique was developed to fabricate GaN films. GaN films possessing hexagonal wurtzite structure were fabricated on Si(111) substrates with ZnO buffer layers through nitriding Ga2O3 films in the tube quartz furnace. ZnO buffer layers and Ga3O3 films were deposited on Si substrates in turn by using radio frequency magnetron sputtering system before the nitriding process. The structure and composition of GaN films were studied by X-ray diffraction, selected area electron diffraction and Fourier transform infrared spectrophotometer. The morphologies of GaN films were studied by scanning electron microscopy. The results show that ZnO buffer layer improves the crystalline quality and the surface morphology of the films relative to the films grown directly on silicon substrates. The measurement result of room-temperature photoluminescence spectrum indicates that the photoluminescence peaks locate at 365 nm and 422 nm.
基金supported in part by the National Natural Science Foundation of China(Grant No.61974015)Key R&D Project of Science and Technology Plan of the Sichuan province(Grant No.2021YFG0139)the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices of China(Grant No.KFJJ201806)。
文摘A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),SiC superjuction MOSFET(SJ MOSFET)and the conventional SiC MOSFET in this article.In the proposed SiC Hk-SJ-SBD MOSFET,under the combined action of the p-type region and the Hk dielectric layer in the drift region,the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance(Ron,sp).The integrated Schottky barrier diode(SBD)also greatly improves the reverse recovery performance of the device.TCAD simulation results indicate that the Ron,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm^(2)with a 2240 V breakdown voltage(BV),which is more than 72.4%,23%,5.6%lower than that of the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET with the 1950,2220,and 2220V BV,respectively.The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC,which are greatly reduced by more than 74%and 94%in comparison with those of all the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET,due to the integrated SBD in the proposed MOSFET.And the trade-off relationship between the Ron,sp and the BV is also significantly improved compared with that of the conventional MOSFET,Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature,respectively.In addition,compared with conventional SJ SiC MOSFET,the proposed SiC MOSFET has better immunity to charge imbalance,which may bring great application prospects.
文摘The unexplored terahertz (THz) region involves important phenomena of both fundamental and applied natures. Examples include phonon interactions, rotational transitions and intermolecular dynamics. Frequency tunable high power THz wave generation has been successfully achieved utilizing lattice resonance of LiNbO3 and GaP crystals, respectively. Semiconductor devices utilizing electron tunneling effect have also been developed.
基金National Natural Science Foundation of China (Grant Nos. 52002219, 51932004 and 61975098)Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B010174002)+2 种基金Shenzhen Fundamental Research Program (Grant No. JCYJ20210324132014038)Natural Science Foundation of Shandong (Grant No. ZR202105230005)the 111 Project 2.0 (Grant No. BP2018013)。
文摘High thickness uniformity and large-scale films of α-Ga_(2)O_(3) are crucial factors for the development of power devices.In this work, a high-quality 2-inch α-Ga_(2)O_(3) epitaxial film on c-plane sapphire substrates was prepared by the mist-CVD method.The growth rate and phase control mechanisms were systematically investigated. The growth rate of the α-Ga_(2)O_(3) films was limited by the evaporation of the microdroplets containing gallium acetylacetonate. By adjusting the substrate position(z) from 80 to 50 mm, the growth rate was increased from 307 nm/h to 1.45 μm/h when the growth temperature was fixed at 520 °C.When the growth temperature exceeded 560 °C, ε-Ga_(2)O_(3) was observed to form at the edges of 2-inch sapphire substrate.Phase control was achieved by adjusting the growth temperature. When the growth temperature was 540 °C and the substrate position was 50 mm, the full-width at half maximum(FWHM) of the rocking curves for the(0006) and(10-14) planes were 0.023° and 1.17°. The screw and edge dislocations were 2.3 × 10~6 and 3.9 × 10~(10)cm~(-2), respectively. Furthermore, the bandgaps and optical transmittance of α-Ga_(2)O_(3) films grown under different conditions were characterized utilizing UV-visible and near-IR scanning spectra.
基金supported by the National Natural Science Foundation of China(Nos.61674130,61604137)
文摘Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor deposition(MOCVD) on an Fedoped semi-insulating(010) Ga_2O_3 substrate. The structure consisted of a 400 nm unintentionally doped(UID) Ga_2O_3 buffer layer and an 80 nm Si-doped channel layer. A high k HfO_2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at V_(gs) of 3 V. The off-state current was as low as 7.1 ×10^(-11) A/mm, and the drain current I_(ON)/I_(OFF) ratio reached 10~9. The transistors exhibited three-terminal off-state breakdown voltages of 450 and 550 V, corresponding to gate-to-drain spacing of 4 and 8 μm, respectively.
文摘In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance.The breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V.The maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the AlGaN/GaN HEMTs exceed 30 and 20 GHz,respectively.The results demonstrate the potential of AlGaN/GaN HEMTs on freestanding GaN substrates for microwave power applications.
基金by the National Natural Science Foundation of China(No 51075344)Natural Science Foundation of Fujian Province(No 2010J01015).
文摘A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated.Under the irradiation of a 4×4 mm^(2) planar solid 63Ni source with an activity of 2 mCi,the open−circuit voltage Voc of the fabricated single 2×2 mm^(2) cell reaches as high as 1.62 V,the short−circuit current density Jsc is measured to be 16nA/cm^(2).The microbattery has a fill factor of 55%,and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%.The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.
基金supported by the National Key Research and Development Program(No.2019YFB2005503)。
文摘Aiming at the problem that the lattice feature exceeds the view field of the scanning electron microscope(SEM)measuring system,a new lattice measuring method is proposed based on integral imaging technology.When the system works,the SEM measuring system is equivalent to an integral image acquisition system.Firstly,a lattice measuring method is researched based on integral imaging theory.Secondly,the system parameters are calibrated by the VLSI lattice standard.Finally,the value of the lattice standard to be tested is determined based on the calibration parameters and the lattice measuring algorithm.The experimental results show that,compared with the traditional electron microscope measurement method,the relative error of the measured value of the algorithm is maintained within 0.2%,with the same level of measurement accuracy,but it expands the field of view of the electron microscope measurement system,which is suitable for the measurement of samples under high magnification.
文摘As an ultra-precise instrument to characterize nano-morphology and structure,the morphology of atomic force microscopy(AFM)tip directly affects the quality of the scanned images,which in turn affects the measurement accuracy.In order to accurately characterize three-dimensional information of AFM tip,a reconstruction method of AFM tip using 2μm lattice sample is researched.Under normal circumstances,an array of micro-nano structures is used to reconstruct the morphology of AFM tip.Therefore,the 2μm lattice sample was developed based on semiconductor technology as a characterization tool for tip reconstruction.The experimental results show that the 2μm lattice sample has good uniformity and consistency,and can be applied to the tip reconstruction method.In addition,the reconstruction method can accurately obtain the morphology of AFM tip,effectively eliminate the influence of the"probe effect"on the measurement results,and improve measurement accuracy.
基金financially supported by the National Natural Science Foundation of China (No. 51272024)the Ph.D. Programs Foundation of the Ministry of Education of China (No. 20110006110011)the Fundamental Research Funds for Central Universities (No. FRF-TP-13-035A)
文摘With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current （DC） arc jet chemical vapor deposition （CVD） are considered to be one of the most promising materials for high-frequency and high-power electronic devices. In this paper, high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD, and then, the p-type surface conductive layer with the sheet carrier density of 10^11-10^13 cm-2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min. Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode, respectively, afterwards, they were treated by rapid vacuum annealing at different temperatures. The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method （TLM）. Due to the formation of Ti-related carbide at high temperature, the specific contact resistance of Ti/Au contact gradually decreases to 9.95 × 10^-5 Ω-cm2 as the temperature increases to 820℃. However, when the annealing temperature reaches 850℃, the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au. As for the as-deposited Au contact, it shows an ohmic contact. After annealing treatment at 550℃, low specific contact resistance was detected for Au contact, which is derived from the enhancement of interdiffusion between Au and diamond films.
基金supported by the National Natural Sci-ence Foundation of China under grant No. 50472068 and No. 50721002the National "863" High Technology Re-search and Development Program of China under grant No. 2006AA03A145 and No. 2007AA03Z405+1 种基金the Na-tional Basic Research Program of China under grant No.2009CB930503the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China under grant No. 707039
文摘Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1 × 10^6 Qcm were achieved by vanadium doping during sublimation. Secondary-ion-mass-spectrometry （SIMS） was employed to determine the concentration of impurities in the crystals, such as B, AI, V and N. These results indicated that the concentration of nitrogen and aluminum kept on decreasing and the concentration of B and V was almost constant during the whole growth. An inner crucible was used to control the exhausting of vanadium, which made the uniformity of the high resistivity （〉1×10^6 Ωcm） in the wafer up to 80%. High-performance AlGaN/GaN high-electronmobility-transistor （HEMT） materials and devices were grown and fabricated on semi-insulating 6H-SiC sub- strates. The two-dimensional electron gas （2DEG） mobility at room-temperature was 1795 cm^2/V-s. The charge carrier concentration of the substrate determined by capacitance-voltage （C-V） test was 7.3×10^15 cm^-3. The device with a gate width of I mm exhibits a maximum output power of 5.5 W at 8 GHz, which proves the semi-insulating property of the substrates indirectly.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60876009)
文摘The effect of an initially grown high-temperature A1N buffer （HT-A1N） layer＇s thickness on the quality of an A1N epilayer grown on sapphire substrate by metalorganic chemical vapor deposition （MOCVD） in a two-step growth process is investigated. The characteristics of A1N epilayers are analyzed by using triple-axis crystal X-ray diffraction （XRD） and atomic force microscopy （AFM）. It is shown that the crystal quality of the A1N epilayer is closely related to its correlation length. The correlation length is determined by the thickness of the initially grown HT-A1N buffer layer. We find that the optimal HT-A1N buffer thickness for obtaining a high-quality A1N epilayer grown on sapphire substrate is about 20 nm.
文摘An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapter board technology.Four layers of high-resistance silicon substrate stack packaging are implemented based on the wafer-level gold-gold bonding process.Each layer adopts though silicon via(TSV)technology to realize signal interconnection.A core monolithic integrated microwave chip(MMIC)is embedded in the silicon cavity,and the silicon-based filter is integrated with the high-resistance silicon substrate.The interconnect line,cavity and filter of the silicon-based adapter board are designed with AutoCAD,and HFSS is adopted for 3D electromagnetic field simulation.According to the measured results,the radio frequency(RF)of the mixing multi-function chip is 40-44 GHz and its intermediate frequency(IF)can cover the Ku band with a chip size of 10 mm×11 mm×1 mm.The multiplier multi-function chip operates at 16-20 GHz.The fundamental suppression is greater than 50 dB and the second harmonic suppression is better than 40 dB with a chip size of 8 mm×8 mm×1 mm.The cascaded fully assembled mixing component achieves a spur of better than-50 dBc and a gain of better than 15 dB.
文摘New progress in the post researches on space grown materials, the development of experiment facilities, and the experiment techniques for space materials researches were introduced. Besides the conventional materials, such as alloys, semiconductors, and optical crystals, new materials have also been prepared on the ground.
基金supported by the National Natural Science Foundation of China(Grant Nos.61334002,61106106,and 61474091)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201206)+3 种基金the New Experiment Development Funds for Xidian University,China(Grant No.SY1213)the 111 Project,China(Grant No.B12026)the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry,Chinathe Fundamental Research Funds for the Central Universities,China(Grant No.K5051325002)
文摘The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor（HEMT） becomes one of the most important reliability issues with the downscaling of feature size.In this paper,the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K.Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current.By comparing the experimental data with the numerical transport models,it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current.However,good agreement is found between the experimental data and the two-dimensional variable range hopping（2D-VRH） model.Therefore,it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer.Moreover,the activation energy of surface leakage current is extracted,which is around 0.083 eV.Finally,the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied.It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV,which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper.
