We report the characterization of serf-assembled epitaxially grown FeSi2 nanowires （NWs） in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy （RDE） on silicon （110） show dimen...We report the characterization of serf-assembled epitaxially grown FeSi2 nanowires （NWs） in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy （RDE） on silicon （110） show dimensions of lOnmxSnm, and several micrometres in length. By using conductive-AFM （e-AFM）, electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi2 NW is estimated to be 225 μΩ.cm. Using superconducting quantum interference device （SQUID）, we measure a magnetic moment of 0.3 ± 0.1 Bohr magneton per iron atom for these FeSi2 NWs.展开更多
We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires （TM-NW） growth and electrical transport properties. NWs grown by reactive deposition epitaxy on var...We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires （TM-NW） growth and electrical transport properties. NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10nm by 5nm, and several micrometers in length. NW orientations strongly depend on substrate crystal orientation, and follow the substrate symmetry. By using conductive-AFM （c-AFM）, the electron transport properties of one single NW were measured, the resistivity of crystalline nickel silicide NW was estimated to be 2×10-2Ω＆#12539;cm.展开更多
文摘We report the characterization of serf-assembled epitaxially grown FeSi2 nanowires （NWs） in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy （RDE） on silicon （110） show dimensions of lOnmxSnm, and several micrometres in length. By using conductive-AFM （e-AFM）, electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi2 NW is estimated to be 225 μΩ.cm. Using superconducting quantum interference device （SQUID）, we measure a magnetic moment of 0.3 ± 0.1 Bohr magneton per iron atom for these FeSi2 NWs.
基金Supported by the National Natural Science Foundation of China under Grant No 10874016.
文摘We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires （TM-NW） growth and electrical transport properties. NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10nm by 5nm, and several micrometers in length. NW orientations strongly depend on substrate crystal orientation, and follow the substrate symmetry. By using conductive-AFM （c-AFM）, the electron transport properties of one single NW were measured, the resistivity of crystalline nickel silicide NW was estimated to be 2×10-2Ω＆#12539;cm.
