Hydrogen has emerged as a promising clean energy carrier,and the development of cost-effective electrocatalysts that retain high activity under acidic media is crucial for advancing proton exchange membrane water elec...Hydrogen has emerged as a promising clean energy carrier,and the development of cost-effective electrocatalysts that retain high activity under acidic media is crucial for advancing proton exchange membrane water electrolysis(PEMWE).Here,we propose the SiO_(x)/RuCoO_(x)nanoparticles(SiO_(x)/RuCoO_(x)NPs)as bifunctional electrocatalysts for efficient hydrogen evolution reaction(HER)and oxygen evolution reaction(OER)under acidic media.The Ru-O-Si interface,along with charge transfer between Ru and Co,modulates the d-band electronic structure of the Ru site,achieving superior performance with a low HER overpotential of 18 mV at 10 mA cm^(-2)and a turnover frequency of 8.86 H_(2)s^(-1)at 100 mV.For OER,the overpotential is 217 mV at 10 mA cm^(-2).SiO_(x)/RuCoO_(x)NPs exhibit a cell voltage of 1.482 V at 10 mA cm^(-2)with an energy conversion efficiency of 83.0%.This work takes a significant step toward achieving efficient and cost-effective bifunctional electrocatalysts for water splitting,playing a critical role in the transition to clean energy technologies.展开更多
Sequential processing(SqP)of the active layer offers independent optimization of the donor and acceptor with more targeted solvent design,which is considered the most promising strategy for achieving efficient organic...Sequential processing(SqP)of the active layer offers independent optimization of the donor and acceptor with more targeted solvent design,which is considered the most promising strategy for achieving efficient organic solar cells(OSCs).In the SqP method,the favorable interpenetrating network seriously depends on the fine control of the bottom layer swelling.However,the choice of solvent(s)for both the donor and acceptor have been mostly based on a trial-and-error manner.A single solvent often cannot achieve sufficient yet not excessive swelling,which has long been a difficulty in the high efficient SqP OSCs.Herein,two new isomeric molecules are introduced to fine-tune the nucleation and crystallization dynamics that allows judicious control over the swelling of the bottom layer.The strong non-covalent interaction between the isomeric molecule and active materials provides an excellent driving force for optimize the swelling-process.Among them,the molecule with high dipole moment promotes earlier nucleation of the PM6 and provides extended time for crystallization during SqP,improving bulk morphology and vertical phase segregation.As a result,champion efficiencies of 17.38%and 20.00%(certified 19.70%)are achieved based on PM6/PYF-T-o(all-polymer)and PM6/BTP-eC9 devices casted by toluene solvent.展开更多
Pyrolysis is a rapidly expanding chemical-based recyclable method that complements physical recycling. It avoids improper disposal of post-consumer polymers and mitigates the ecological problems linked to the producti...Pyrolysis is a rapidly expanding chemical-based recyclable method that complements physical recycling. It avoids improper disposal of post-consumer polymers and mitigates the ecological problems linked to the production of new plastic. Nevertheless, while there is a consensus that pyrolysis might be a crucial technology in the years to come, more discussions are needed to address the challenges related to scaling up, the long-term sustainability of the process, and additional variables essential to the advancement of the green economy. Herein, it emphasizes knowledge gaps and methodological issues in current Life Cycle Assessment (LCA), underlining the need for standardized techniques and updated data to support robust decision-making for adopting pyrolysis technologies in waste management strategies. For this purpose, this study reviews the LCAs of pyrolytic processes, encompassing the complete life cycle, from feedstock collection to end-product distribution, including elements such as energy consumption, greenhouse gas emissions, and waste creation. Hence, we evaluate diverse pyrolysis processes, including slow, rapid, and catalytic pyrolysis, emphasizing their distinct efficiency and environmental footprints. Furthermore, we evaluate the impact of feedstock composition, process parameters, and scale of operation on the overall sustainability of pyrolysis-based plastic waste treatment by integrating results from current literature and identifying essential research needs. Therefore, this paper argues that existing LCA studies need more coherence and accuracy. It follows a thorough evaluation of previous research and suggests new insights into methodologies and restrictions.展开更多
Solid-state batteries are widely recognized as the next-generation energy storage devices with high specific energy,high safety,and high environmental adaptability.However,the research and development of solid-state b...Solid-state batteries are widely recognized as the next-generation energy storage devices with high specific energy,high safety,and high environmental adaptability.However,the research and development of solid-state batteries are resource-intensive and time-consuming due to their complex chemical environment,rendering performance prediction arduous and delaying large-scale industrialization.Artificial intelligence serves as an accelerator for solid-state battery development by enabling efficient material screening and performance prediction.This review will systematically examine how the latest progress in using machine learning(ML)algorithms can be used to mine extensive material databases and accelerate the discovery of high-performance cathode,anode,and electrolyte materials suitable for solid-state batteries.Furthermore,the use of ML technology to accurately estimate and predict key performance indicators in the solid-state battery management system will be discussed,among which are state of charge,state of health,remaining useful life,and battery capacity.Finally,we will summarize the main challenges encountered in the current research,such as data quality issues and poor code portability,and propose possible solutions and development paths.These will provide clear guidance for future research and technological reiteration.展开更多
Ultralow-power non-volatile memristors are key elements in electronics.Generally,power reduction of memristors compromises data retention,a challenge known as the“power-retention dilemma,”due to the stochastic forma...Ultralow-power non-volatile memristors are key elements in electronics.Generally,power reduction of memristors compromises data retention,a challenge known as the“power-retention dilemma,”due to the stochastic formation of conductive dendrites in resistive-switching materials.Here,we report the results of conductive dendrite engineering in single-crystalline two-dimensional(2D)dielectrics in which directional control of filamentary distribution is possible.We find that the single-vacancy density(nSV)of single-crystalline hexagonal boron nitride(h-BN)plays an essential role in regulating conductive dendrite growth,supported by scanning joule expansion microscopy(SJEM).With optimized nSV,random dendrite growth is largely limited,and electrons hop between the neighboring Ag nanoclusters in vertical channels.The corresponding model was established to probe the relationship between nSV and memristor operating voltage.The conductive channel confinement in the vertical orientation contributes to long-retention non-volatile memristors with ultralow switch voltages(set:26 mV;reset:135 mV),excellent power efficiency(4 fW standby and a switching energy of 72 pJ)while keeping a high on/off resistance ratio of 108.Even at a record-low compliance current of 10 nA,memristors retains very robust nonvolatile,multiple resistive states with an operating voltage less than 120 mV(the per-transition power low as 900 pW).展开更多
Lithium-carbon dioxide(Li-CO_(2))batteries using high ion-conductive inorganic molten salt electrolytes have recently attracted much attention due to the high energy density and potential application of carbon neutral...Lithium-carbon dioxide(Li-CO_(2))batteries using high ion-conductive inorganic molten salt electrolytes have recently attracted much attention due to the high energy density and potential application of carbon neutrality.However,the poor Li-ion conductivity of the molten-salt electrolytes at room temperature(RT)makes these batteries lose most of their capacity and power as the temperature falls below 80℃.Here,inspired by the greenhouse effect,we report an RT molten salt Li-CO_(2)battery where solar energy can be efficiently harvested and converted into heat that is further localized on the cathode consisting of plasmonic ruthenium(Ru)catalysts and Li_(2)CO_(3)-based products via a greenhouse-like phenomenon.As a result,the solar-driven molten salt Li-CO_(2)battery demonstrates a larger full discharge/charge capacity of 9.5 mA h/8.1 mA h,and a longer cycle lifespan of 250 cycles at 500 mA/g with a limited capacity of 500 mA h/g at RT than the molten salt Li-CO_(2)battery at 130℃.Notably,the average temperature of the cathode increases by 8℃ after discharge to 0.75 mA h,which indicates the infrared radiation from Ru catalysts can be effectively suppressed by discharged Li_(2)CO_(3)-based products.This battery technology paves the way for developing low-temperature molten salt energy storage devices.展开更多
The 8 μm thick single-crystalline α-Ga2O3 epilayers have been heteroepitaxially grown on sapphire(0001) substrates via mist chemical vapor deposition technique. High resolution X-ray diffraction measurements show th...The 8 μm thick single-crystalline α-Ga2O3 epilayers have been heteroepitaxially grown on sapphire(0001) substrates via mist chemical vapor deposition technique. High resolution X-ray diffraction measurements show that the full-widths-at-halfmaximum(FWHM) of rocking curves for the(0006) and(10-14) planes are 0.024° and 0.24°, and the corresponding densities of screw and edge dislocations are 2.24 × 106 and 1.63 × 109 cm-2, respectively, indicative of high single crystallinity. The out-ofplane and in-plane epitaxial relationships are [0001] α-Ga2O3//[0001] α-Al2O3 and [11-20] α-Ga2O3//[11-20] α-Al2O3, respectively.The lateral domain size is in micron scale and the indirect bandgap is determined as 5.03 eV by transmittance spectra. Raman measurement indicates that the lattice-mismatch induced compressive residual strain cannot be ruled out despite the large thickness of the α-Ga2O3 epilayer. The achieved high quality α-Ga2O3 may provide an alternative material platform for developing high performance power devices and solar-blind photodetectors.展开更多
An infrared detector with high responsivity based on graphene-PbSe thin film heterojunction was reported.High-quality PbSe thin film and graphene were prepared by molecular beam epitaxy and chemical vapor deposition,r...An infrared detector with high responsivity based on graphene-PbSe thin film heterojunction was reported.High-quality PbSe thin film and graphene were prepared by molecular beam epitaxy and chemical vapor deposition,respectively.The physical characteristics of PbSe thin film and graphene were performed using X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS)and Raman measurement.The photo transistor using PbSe thin film as a sensitizer and graphene as a channel to transport excitons exhibits peak responsivity and detectivity up to~420 A·W^(-1) and 5.9×10^(11) Jones(radiation intensity:0.75 mW·cm^(-2))at room temperature in the near-infrared(NIR)region,respectively.The high optical response is attributed to the photo-excited holes transferring from PbSe film to graphene under irradiation.Moreover,it is revealed that the responsivity of graphene-PbSe photo transistor is gate-tunable which is important in photodetectors.展开更多
The grain surfaces(film surface and grain boundary)of polycrystalline perovskite films are vulnerable sites in solar cells since they pose a high defect density and initiate the degradation of perovskite absorber.Achi...The grain surfaces(film surface and grain boundary)of polycrystalline perovskite films are vulnerable sites in solar cells since they pose a high defect density and initiate the degradation of perovskite absorber.Achieving simultaneously defect passivation and grain protection from moisture is crucial for the viability of perovskite solar cells.Here,an in situ cross-linked grain encapsulation(CLGE)strategy that improves both device stability and defect passivation is reported.Cross-linkable semiconducting small molecules are mixed into the antisolvent to uniformly form a compact and conducting cross-linked layer over the grain surfaces.This cross-linked coating layer not only passivates trap states and facilitates hole extraction,but also enhances the device stability by preventing moisture diffusion.Using the CLGE strategy,a high power conversion efficiency(PCE)of 22.7%is obtained in 1.55-eV bandgap planar perovskite solar cells.The unencapsulated devices with CLGE exhibit significantly enhanced device stability again moisture and maintain>90%of their initial PCE after shelf storage under ambient condition for over10,000 h.展开更多
The noise robustness and parameter estimation performance of the classical three-dimensional estimating signal parameter via rotational invariance techniques(3D-ESPRIT)algorithm are poor when the parameters of the geo...The noise robustness and parameter estimation performance of the classical three-dimensional estimating signal parameter via rotational invariance techniques(3D-ESPRIT)algorithm are poor when the parameters of the geometric theory of the diffraction(GTD)model are estimated at low signal-to-noise ratio(SNR).To solve this problem,a modified 3D-ESPRIT algorithm is proposed.The modified algorithm improves the parameter estimation accuracy by proposing a novel spatial smoothing technique.Firstly,we make cross-correlation of the auto-correlation matrices;then by averaging the cross-correlation matrices of the forward and backward spatial smoothing,we can obtain a novel equivalent spatial smoothing matrix.The formula of the modified algorithm is derived and the performance of this improved method is also analyzed.Then we compare root-meansquare-errors(RMSEs)of different parameters and the locating accuracy obtained by different algorithms.Furthermore,radar cross section(RCS)of radar targets is extrapolated.Simulation results verify the effectiveness and superiority of the modified 3DESPRIT algorithm.展开更多
The charge-storage characteristics of charge trapping memory devices containing different sizes of Au nanocrystals(NCs)sandwiched by Al2O3 tunneling and blocking layers are studied.A strong impact of both Au NC size a...The charge-storage characteristics of charge trapping memory devices containing different sizes of Au nanocrystals(NCs)sandwiched by Al2O3 tunneling and blocking layers are studied.A strong impact of both Au NC size and inter-NC distance on the charge trapping capability of the devices is observed.The total surface area of Au NCs associated with Au NC size is supposed to be a key factor in the charge-storage capability,and the device with larger size of Au NCs and a suitable inter-NC distance will possess better charge trapping capability.Variable range hopping as the lateral charge loss mechanism is considered as the main reason for the decrease of the charge trapping capability when Au NCs grow and overlap neighbors.展开更多
We investigate properties of perpendicular anisotropy magnetic tunnel junctions(pMTJs) with a stack structure MgO/CoFeB/Ta/CoFeB/MgO as the free layer(or recording layer),and obtain the necessary device parameters fro...We investigate properties of perpendicular anisotropy magnetic tunnel junctions(pMTJs) with a stack structure MgO/CoFeB/Ta/CoFeB/MgO as the free layer(or recording layer),and obtain the necessary device parameters from the tunneling magnetoresistance(TMR) vs.field loops and current-driven magnetization switching experiments.Based on the experimental results and device parameters,we further estimate current-driven switching performance of pMTJ including switching time and power,and their dependence on perpendicular magnetic anisotropy and damping constant of the free layer by SPICE-based circuit simulations.Our results show that the pMTJ cells exhibit a less than 1 ns switching time and write energies <1.4 pJ;meanwhile the lower perpendicular magnetic anisotropy(PMA) and damping constant can further reduce the switching time at the studied range of damping constant α <0.1.Additionally,our results demonstrate that the pMTJs with the thermal stability factor■73 can be easily transformed into spin-torque nano-oscillators from magnetic memory as microwave sources or detectors for telecommunication devices.展开更多
The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal- organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomi...The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal- organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomic force microscopy results show that triangular pits are formed at a relatively high V/III ratio, while a relatively low V/III ratio can enhance the lateral growth rate along the c-axis direction. The higher V/III ratio leads to a high density of pits in comparison with the lower V/III ratio. The surface morphology is improved greatly by using a low V/III ratio of 500 and the roughness mean square of the surface is only 3.9 nm. The high resolution X-ray diffraction characterized crystal structural results show that the rocking curve full width at half maximum along the m axis decreases from 0.757° to 0.720°, while along the c axis increases from 0.220° to 0.251° with the V/III increasing from 500 μmol/min to 2000 μmol/min, which indicates that a relatively low V/III ratio is conducible to the c-axis growth of a-plane GaN.展开更多
Combining a progressive tandem junction design with a unique Si nanowire(SiNW)framework paves the way for the development of high‐onset‐potential photocathodes and enhancement of solar hydrogen production.Herein,a r...Combining a progressive tandem junction design with a unique Si nanowire(SiNW)framework paves the way for the development of high‐onset‐potential photocathodes and enhancement of solar hydrogen production.Herein,a radial tandem junction(RTJ)thin film water‐splitting photo‐cathode has been demonstrated experimentally for the first time.The photocathode is directly fab‐ricated on vapor‐liquid‐solid‐grown SiNWs and consists of two radially stacked p‐i‐n junctions,featuring hydrogenated amorphous silicon(a‐Si:H)as the outer absorber layer,which absorbs short wavelengths,and hydrogenated amorphous silicon germanium(a‐SiGe:H)as the inner layer,which absorbs long wavelengths.The randomly distributed SiNW framework enables highly efficient light‐trapping,which facilitates the use of very thin absorber layers of a‐Si:H(~50 nm)and a‐SiGe:H(~40 nm).In a neutral electrolyte(pH=7),the three‐dimensional(3D)RTJ photocathode delivers a high photocurrent onset of 1.15 V vs.the reversible hydrogen electrode(RHE),accompanied by a photocurrent of 2.98 mA/cm^(2) at 0 V vs.RHE,and an overall applied‐bias photon‐to‐current effi‐ciency of 1.72%.These results emphasize the promising role of 3D radial tandem technology in developing a new generation of durable,low‐cost,high‐onset‐potential photocathodes capable of large‐scale implementation。展开更多
The effects of a polarization field on the current transport mechanisms in ultraviolet light emitting diodes(UV-LEDs)are studied by analyzing forward current-voltage(I–V)characteristics based on the experimental data...The effects of a polarization field on the current transport mechanisms in ultraviolet light emitting diodes(UV-LEDs)are studied by analyzing forward current-voltage(I–V)characteristics based on the experimental data and theoretical simulation.The results indicate that polarization electric field suppresses the diffusion current and meanwhile enhances the tunneling current in the metal-face UV LEDs under forward bias.The presence of a large polarization field in the deep UV-LEDs is responsible for the current transport mechanism dominated by the tunneling process at a moderate forward bias.展开更多
Blue-red complex light emitting InGaN/GaN multi-quantum well(MQW)structures are fabricated by metal organic chemical vapor deposition(MOCVD).The structures are grown on a 2-inch diameter(0001)oriented(c−face)sapphire ...Blue-red complex light emitting InGaN/GaN multi-quantum well(MQW)structures are fabricated by metal organic chemical vapor deposition(MOCVD).The structures are grown on a 2-inch diameter(0001)oriented(c−face)sapphire substrate,which consists of an approximately 2-µm−thick GaN template and a five-period layer consisting of a 4.9-nm-thick In0.18Ga0.82N well layer and a GaN barrier layer.The surface morphology of the MQW structures is observed by an atomic force microscope(AFM),which indicates the presence of islands of several tens of nanometers in height on the surface.The high resolution x−ray diffraction(XRD)θ/2θscan is carried out on the symmetric(0002)of the InGaN/GaN MQW structures.At least four order satellite peaks presented in the XRD spectrum indicate that the thickness and alloy compositions of the individual quantum wells are repeatable throughout the active region.Besides the 364 nm GaN band edge emission,two main emissions of blue and amber light from these MQWs are found,which possibly originate from the carrier recombinations in the InGaN/GaN QWs and InGaN quasi-quantum dots embedded in the QWs.展开更多
The forward current transport mechanism and Schottky barrier characteristics of a Ni/Au contact on n-GaN are studied by using temperature-dependent current-voltage(T–I–V)and capacitance-voltage(C–V)measurements.The...The forward current transport mechanism and Schottky barrier characteristics of a Ni/Au contact on n-GaN are studied by using temperature-dependent current-voltage(T–I–V)and capacitance-voltage(C–V)measurements.The low-forward-bias I–V curve of the Schottky junction is found to be dominated by trap-assisted tunneling below 400 K,and thus can not be used to deduce the Schottky barrier height(SBH)based on the thermionic emission(TE)model.On the other hand,TE transport mechanism dominates the high-forward-bias region and a modified I–V method is adopted to deduce the effective barrier height.It is found that the estimated SBH(~0.95 eV at 300 K)by the I–V method is~0.20 eV lower than that obtained by the C–V method,which is explained by a barrier inhomogeneity model over the Schottky contact area.展开更多
A model of fundamental torsional vibration of a cantilever with lateral friction is presented by using the harmonic balance method.The model demonstrates that the torsional vibration has close relations with the later...A model of fundamental torsional vibration of a cantilever with lateral friction is presented by using the harmonic balance method.The model demonstrates that the torsional vibration has close relations with the lateral friction threshold,the lateral contact stiffness and the torsional vibration amplitude of the cantilever.When the threshold is larger than a product of the stiffness and the vibration amplitude,the lateral friction is a linear force with the amplitude.If the lateral friction threshold is less than the product,the motions of the tip on the sample can be stick-slip or slip motions.The results are useful to optimize and to manipulate the fundamental flexural vibration of the piezo-cantilever,and give an insight into the tribological characterization of the interface in a resonance friction microscope.展开更多
We report a perpendicular magnetic tunnel junction(p MTJ)cell with a tunnel magnetoresistance(TMR)ratio of nearly 200%at room temperature based on Co Fe B/Ta/Co Fe B as the free layer(FL)and a synthetic antiferromagne...We report a perpendicular magnetic tunnel junction(p MTJ)cell with a tunnel magnetoresistance(TMR)ratio of nearly 200%at room temperature based on Co Fe B/Ta/Co Fe B as the free layer(FL)and a synthetic antiferromagnetic(SAF)multilayer[Pt/Co]/Ru/[Pt/Co]/Ta/Co Fe B as the reference layer(RL).The field-driven magnetization switching measurements show that the p MTJs exhibit an anomalous TMR hysteresis loop.The spin-polarized layer Co Fe B of SAF-RL has a lower critical switching field than that of FL.The reason is related to the interlayer exchange coupling(IEC)through a moderately thick Ta spacer layer among SAF-RLs,which generates a moderate and negative bias magnetic field on Co Fe B of RL.However,the IEC among RLs has a negligible influence on the current-driven magnetization switching of FL and its magnetization dynamics.展开更多
We investigate the magnetic damping parameter of Fe 1−x Cr x thin films using the time-resolved magneto-optical Kerr effect technique.It is demonstrated that the overall effective damping parameter is enhanced with th...We investigate the magnetic damping parameter of Fe 1−x Cr x thin films using the time-resolved magneto-optical Kerr effect technique.It is demonstrated that the overall effective damping parameter is enhanced with the increasing Cr concentration.The effective damping at high fieldα0 is found to be significantly enhanced when increasing the Cr concentration with theα0=0.159 in the Fe 45 Cr 55 enhanced by 562%compared with that ofα0=0.024 in the pure Fe film.This study provides a new approach of controlling the effective damping parameter with a desired magnitude via varying Cr composition.展开更多
基金financially supported by the National Natural Science Foundation of China(No.61921005)the Key R&D Project of Nantong(No.GZ2024004)
文摘Hydrogen has emerged as a promising clean energy carrier,and the development of cost-effective electrocatalysts that retain high activity under acidic media is crucial for advancing proton exchange membrane water electrolysis(PEMWE).Here,we propose the SiO_(x)/RuCoO_(x)nanoparticles(SiO_(x)/RuCoO_(x)NPs)as bifunctional electrocatalysts for efficient hydrogen evolution reaction(HER)and oxygen evolution reaction(OER)under acidic media.The Ru-O-Si interface,along with charge transfer between Ru and Co,modulates the d-band electronic structure of the Ru site,achieving superior performance with a low HER overpotential of 18 mV at 10 mA cm^(-2)and a turnover frequency of 8.86 H_(2)s^(-1)at 100 mV.For OER,the overpotential is 217 mV at 10 mA cm^(-2).SiO_(x)/RuCoO_(x)NPs exhibit a cell voltage of 1.482 V at 10 mA cm^(-2)with an energy conversion efficiency of 83.0%.This work takes a significant step toward achieving efficient and cost-effective bifunctional electrocatalysts for water splitting,playing a critical role in the transition to clean energy technologies.
基金supported by the Guangdong Basic and Applied Basic Research Foundation (2022A1515010875)National Natural Science Foundation of China (12404480)+4 种基金Shenzhen Science and Technology Program (JCYJ20240813113238050, JCYJ20240813113306008)Education Department of Guangdong Province (2021KCXTD045)National Natural Science Foundation of China (12274303)the Shenzhen Key Laboratory of Applied Technologies of Super-Diamond and Functional Crystals (ZDSYS20230626091303007)Characteristic Innovation Foundation of Higher Education Institutions of Guangdong Province (2022KTSCX116)
文摘Sequential processing(SqP)of the active layer offers independent optimization of the donor and acceptor with more targeted solvent design,which is considered the most promising strategy for achieving efficient organic solar cells(OSCs).In the SqP method,the favorable interpenetrating network seriously depends on the fine control of the bottom layer swelling.However,the choice of solvent(s)for both the donor and acceptor have been mostly based on a trial-and-error manner.A single solvent often cannot achieve sufficient yet not excessive swelling,which has long been a difficulty in the high efficient SqP OSCs.Herein,two new isomeric molecules are introduced to fine-tune the nucleation and crystallization dynamics that allows judicious control over the swelling of the bottom layer.The strong non-covalent interaction between the isomeric molecule and active materials provides an excellent driving force for optimize the swelling-process.Among them,the molecule with high dipole moment promotes earlier nucleation of the PM6 and provides extended time for crystallization during SqP,improving bulk morphology and vertical phase segregation.As a result,champion efficiencies of 17.38%and 20.00%(certified 19.70%)are achieved based on PM6/PYF-T-o(all-polymer)and PM6/BTP-eC9 devices casted by toluene solvent.
文摘Pyrolysis is a rapidly expanding chemical-based recyclable method that complements physical recycling. It avoids improper disposal of post-consumer polymers and mitigates the ecological problems linked to the production of new plastic. Nevertheless, while there is a consensus that pyrolysis might be a crucial technology in the years to come, more discussions are needed to address the challenges related to scaling up, the long-term sustainability of the process, and additional variables essential to the advancement of the green economy. Herein, it emphasizes knowledge gaps and methodological issues in current Life Cycle Assessment (LCA), underlining the need for standardized techniques and updated data to support robust decision-making for adopting pyrolysis technologies in waste management strategies. For this purpose, this study reviews the LCAs of pyrolytic processes, encompassing the complete life cycle, from feedstock collection to end-product distribution, including elements such as energy consumption, greenhouse gas emissions, and waste creation. Hence, we evaluate diverse pyrolysis processes, including slow, rapid, and catalytic pyrolysis, emphasizing their distinct efficiency and environmental footprints. Furthermore, we evaluate the impact of feedstock composition, process parameters, and scale of operation on the overall sustainability of pyrolysis-based plastic waste treatment by integrating results from current literature and identifying essential research needs. Therefore, this paper argues that existing LCA studies need more coherence and accuracy. It follows a thorough evaluation of previous research and suggests new insights into methodologies and restrictions.
基金the National Key Research Program of China under granted No.92164201National Natural Science Foundation of China for Distinguished Young Scholars No.62325403+2 种基金Natural Science Foundation of Jiangsu Province(BK20230498)Jiangsu Funding Program for Excellent Postdoctoral Talent(2024ZB427)the National Natural Science Foundation of China(62304147).
文摘Solid-state batteries are widely recognized as the next-generation energy storage devices with high specific energy,high safety,and high environmental adaptability.However,the research and development of solid-state batteries are resource-intensive and time-consuming due to their complex chemical environment,rendering performance prediction arduous and delaying large-scale industrialization.Artificial intelligence serves as an accelerator for solid-state battery development by enabling efficient material screening and performance prediction.This review will systematically examine how the latest progress in using machine learning(ML)algorithms can be used to mine extensive material databases and accelerate the discovery of high-performance cathode,anode,and electrolyte materials suitable for solid-state batteries.Furthermore,the use of ML technology to accurately estimate and predict key performance indicators in the solid-state battery management system will be discussed,among which are state of charge,state of health,remaining useful life,and battery capacity.Finally,we will summarize the main challenges encountered in the current research,such as data quality issues and poor code portability,and propose possible solutions and development paths.These will provide clear guidance for future research and technological reiteration.
基金support from NSFC(92264106,62090034,62104214,62122067,and 62261160574)the Research Grant Council of Hong Kong(CRS_PolyU502/22)+2 种基金the National Key R&D Program(2022YFA1204303)the NSFC of Zhejiang Province(DT23F0401 and DT23F040008)the Young Elite Scientists Sponsorship Program by CAST(2021QNRC001).
文摘Ultralow-power non-volatile memristors are key elements in electronics.Generally,power reduction of memristors compromises data retention,a challenge known as the“power-retention dilemma,”due to the stochastic formation of conductive dendrites in resistive-switching materials.Here,we report the results of conductive dendrite engineering in single-crystalline two-dimensional(2D)dielectrics in which directional control of filamentary distribution is possible.We find that the single-vacancy density(nSV)of single-crystalline hexagonal boron nitride(h-BN)plays an essential role in regulating conductive dendrite growth,supported by scanning joule expansion microscopy(SJEM).With optimized nSV,random dendrite growth is largely limited,and electrons hop between the neighboring Ag nanoclusters in vertical channels.The corresponding model was established to probe the relationship between nSV and memristor operating voltage.The conductive channel confinement in the vertical orientation contributes to long-retention non-volatile memristors with ultralow switch voltages(set:26 mV;reset:135 mV),excellent power efficiency(4 fW standby and a switching energy of 72 pJ)while keeping a high on/off resistance ratio of 108.Even at a record-low compliance current of 10 nA,memristors retains very robust nonvolatile,multiple resistive states with an operating voltage less than 120 mV(the per-transition power low as 900 pW).
基金supported by the National Natural Science Foundation of China(NSFC,62104099,61921005,62105048,62204117 and 62073299)the Science and Technology Research Program of Chongqing Education Commission(KJQN202100633)+5 种基金the Postdoctoral Science Foundation of China(2021M693768 and 2021M701057)the Key Scientific Research Project in Colleges and Universities of Henan Province,China(21A416001)the Key Laboratory for Special Functional Materials(KEKT2022-06)the Natural Science Foundation of Jiangsu Province(BK20210275 and BK20230498)the support from Jiangsu Province Science Foundation for Youths(BK20210275)National Natural Science Foundation of China(NSFC,62204117)。
文摘Lithium-carbon dioxide(Li-CO_(2))batteries using high ion-conductive inorganic molten salt electrolytes have recently attracted much attention due to the high energy density and potential application of carbon neutrality.However,the poor Li-ion conductivity of the molten-salt electrolytes at room temperature(RT)makes these batteries lose most of their capacity and power as the temperature falls below 80℃.Here,inspired by the greenhouse effect,we report an RT molten salt Li-CO_(2)battery where solar energy can be efficiently harvested and converted into heat that is further localized on the cathode consisting of plasmonic ruthenium(Ru)catalysts and Li_(2)CO_(3)-based products via a greenhouse-like phenomenon.As a result,the solar-driven molten salt Li-CO_(2)battery demonstrates a larger full discharge/charge capacity of 9.5 mA h/8.1 mA h,and a longer cycle lifespan of 250 cycles at 500 mA/g with a limited capacity of 500 mA h/g at RT than the molten salt Li-CO_(2)battery at 130℃.Notably,the average temperature of the cathode increases by 8℃ after discharge to 0.75 mA h,which indicates the infrared radiation from Ru catalysts can be effectively suppressed by discharged Li_(2)CO_(3)-based products.This battery technology paves the way for developing low-temperature molten salt energy storage devices.
基金supported by the National Key Research and Development Project(No.2017YFB0403003)Shenzhen Fundamental Research Project(Nos.201773239,201888588)+4 种基金the National Natural Science Foundation of China(Nos.61774081,61322403)State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices(No.2017KF001)the Natural Science Foundation of Jiangsu Province(No.BK20161401)the Six Talent Peaks Project in Jiangsu Province(Mo.2014XXRJ001)the Fundamental Research Funds for the C entral Universities(Nos.021014380093,021014380085)
文摘The 8 μm thick single-crystalline α-Ga2O3 epilayers have been heteroepitaxially grown on sapphire(0001) substrates via mist chemical vapor deposition technique. High resolution X-ray diffraction measurements show that the full-widths-at-halfmaximum(FWHM) of rocking curves for the(0006) and(10-14) planes are 0.024° and 0.24°, and the corresponding densities of screw and edge dislocations are 2.24 × 106 and 1.63 × 109 cm-2, respectively, indicative of high single crystallinity. The out-ofplane and in-plane epitaxial relationships are [0001] α-Ga2O3//[0001] α-Al2O3 and [11-20] α-Ga2O3//[11-20] α-Al2O3, respectively.The lateral domain size is in micron scale and the indirect bandgap is determined as 5.03 eV by transmittance spectra. Raman measurement indicates that the lattice-mismatch induced compressive residual strain cannot be ruled out despite the large thickness of the α-Ga2O3 epilayer. The achieved high quality α-Ga2O3 may provide an alternative material platform for developing high performance power devices and solar-blind photodetectors.
基金financially supported by the National Natural Science Foundation of China(No.51572043)。
文摘An infrared detector with high responsivity based on graphene-PbSe thin film heterojunction was reported.High-quality PbSe thin film and graphene were prepared by molecular beam epitaxy and chemical vapor deposition,respectively.The physical characteristics of PbSe thin film and graphene were performed using X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS)and Raman measurement.The photo transistor using PbSe thin film as a sensitizer and graphene as a channel to transport excitons exhibits peak responsivity and detectivity up to~420 A·W^(-1) and 5.9×10^(11) Jones(radiation intensity:0.75 mW·cm^(-2))at room temperature in the near-infrared(NIR)region,respectively.The high optical response is attributed to the photo-excited holes transferring from PbSe film to graphene under irradiation.Moreover,it is revealed that the responsivity of graphene-PbSe photo transistor is gate-tunable which is important in photodetectors.
基金financially supported by the National Key R&D Program of China(2018YFB1500102,2018YFB2200101)the National Natural Science Foundation of China(61974063,61921005)+3 种基金Natural Science Foundation of Jiangsu Province(BK20190315)the Fundamental Research Funds for the Central Universities(14380168)the Thousand Talent Program for Young Outstanding Scientists in ChinaProgram for Innovative Talents and Entrepreneur in Jiangsu。
文摘The grain surfaces(film surface and grain boundary)of polycrystalline perovskite films are vulnerable sites in solar cells since they pose a high defect density and initiate the degradation of perovskite absorber.Achieving simultaneously defect passivation and grain protection from moisture is crucial for the viability of perovskite solar cells.Here,an in situ cross-linked grain encapsulation(CLGE)strategy that improves both device stability and defect passivation is reported.Cross-linkable semiconducting small molecules are mixed into the antisolvent to uniformly form a compact and conducting cross-linked layer over the grain surfaces.This cross-linked coating layer not only passivates trap states and facilitates hole extraction,but also enhances the device stability by preventing moisture diffusion.Using the CLGE strategy,a high power conversion efficiency(PCE)of 22.7%is obtained in 1.55-eV bandgap planar perovskite solar cells.The unencapsulated devices with CLGE exhibit significantly enhanced device stability again moisture and maintain>90%of their initial PCE after shelf storage under ambient condition for over10,000 h.
基金This work was supported by the National Natural Science Foundation of China(61372033).
文摘The noise robustness and parameter estimation performance of the classical three-dimensional estimating signal parameter via rotational invariance techniques(3D-ESPRIT)algorithm are poor when the parameters of the geometric theory of the diffraction(GTD)model are estimated at low signal-to-noise ratio(SNR).To solve this problem,a modified 3D-ESPRIT algorithm is proposed.The modified algorithm improves the parameter estimation accuracy by proposing a novel spatial smoothing technique.Firstly,we make cross-correlation of the auto-correlation matrices;then by averaging the cross-correlation matrices of the forward and backward spatial smoothing,we can obtain a novel equivalent spatial smoothing matrix.The formula of the modified algorithm is derived and the performance of this improved method is also analyzed.Then we compare root-meansquare-errors(RMSEs)of different parameters and the locating accuracy obtained by different algorithms.Furthermore,radar cross section(RCS)of radar targets is extrapolated.Simulation results verify the effectiveness and superiority of the modified 3DESPRIT algorithm.
基金Supported by the National Natural Science Foundation of China under Grant No 61176124the National Basic Research Program of China under Grant No 2010CB934201the Priority Academic Program Development of Jiangsu Higher Education Institutions.
文摘The charge-storage characteristics of charge trapping memory devices containing different sizes of Au nanocrystals(NCs)sandwiched by Al2O3 tunneling and blocking layers are studied.A strong impact of both Au NC size and inter-NC distance on the charge trapping capability of the devices is observed.The total surface area of Au NCs associated with Au NC size is supposed to be a key factor in the charge-storage capability,and the device with larger size of Au NCs and a suitable inter-NC distance will possess better charge trapping capability.Variable range hopping as the lateral charge loss mechanism is considered as the main reason for the decrease of the charge trapping capability when Au NCs grow and overlap neighbors.
基金Project supported by State Grid Corporation of China under the 2018 Science and Technology Project of State Grid Corporation:Research on electromagnetic measurement technology based on EIT and TMR(Grant No.JL71-18-007)。
文摘We investigate properties of perpendicular anisotropy magnetic tunnel junctions(pMTJs) with a stack structure MgO/CoFeB/Ta/CoFeB/MgO as the free layer(or recording layer),and obtain the necessary device parameters from the tunneling magnetoresistance(TMR) vs.field loops and current-driven magnetization switching experiments.Based on the experimental results and device parameters,we further estimate current-driven switching performance of pMTJ including switching time and power,and their dependence on perpendicular magnetic anisotropy and damping constant of the free layer by SPICE-based circuit simulations.Our results show that the pMTJ cells exhibit a less than 1 ns switching time and write energies <1.4 pJ;meanwhile the lower perpendicular magnetic anisotropy(PMA) and damping constant can further reduce the switching time at the studied range of damping constant α <0.1.Additionally,our results demonstrate that the pMTJs with the thermal stability factor■73 can be easily transformed into spin-torque nano-oscillators from magnetic memory as microwave sources or detectors for telecommunication devices.
基金supported by the Special Funds for Major State Basic Research Project of China (Grant No. 2011CB301900)High Technology Research Program of China (Grant No. 2009AA03A198)+2 种基金the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003)the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178)the Research Funds from NJU-Yangzhou Institute of Opto-electronics, China
文摘The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal- organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomic force microscopy results show that triangular pits are formed at a relatively high V/III ratio, while a relatively low V/III ratio can enhance the lateral growth rate along the c-axis direction. The higher V/III ratio leads to a high density of pits in comparison with the lower V/III ratio. The surface morphology is improved greatly by using a low V/III ratio of 500 and the roughness mean square of the surface is only 3.9 nm. The high resolution X-ray diffraction characterized crystal structural results show that the rocking curve full width at half maximum along the m axis decreases from 0.757° to 0.720°, while along the c axis increases from 0.220° to 0.251° with the V/III increasing from 500 μmol/min to 2000 μmol/min, which indicates that a relatively low V/III ratio is conducible to the c-axis growth of a-plane GaN.
文摘Combining a progressive tandem junction design with a unique Si nanowire(SiNW)framework paves the way for the development of high‐onset‐potential photocathodes and enhancement of solar hydrogen production.Herein,a radial tandem junction(RTJ)thin film water‐splitting photo‐cathode has been demonstrated experimentally for the first time.The photocathode is directly fab‐ricated on vapor‐liquid‐solid‐grown SiNWs and consists of two radially stacked p‐i‐n junctions,featuring hydrogenated amorphous silicon(a‐Si:H)as the outer absorber layer,which absorbs short wavelengths,and hydrogenated amorphous silicon germanium(a‐SiGe:H)as the inner layer,which absorbs long wavelengths.The randomly distributed SiNW framework enables highly efficient light‐trapping,which facilitates the use of very thin absorber layers of a‐Si:H(~50 nm)and a‐SiGe:H(~40 nm).In a neutral electrolyte(pH=7),the three‐dimensional(3D)RTJ photocathode delivers a high photocurrent onset of 1.15 V vs.the reversible hydrogen electrode(RHE),accompanied by a photocurrent of 2.98 mA/cm^(2) at 0 V vs.RHE,and an overall applied‐bias photon‐to‐current effi‐ciency of 1.72%.These results emphasize the promising role of 3D radial tandem technology in developing a new generation of durable,low‐cost,high‐onset‐potential photocathodes capable of large‐scale implementation。
基金Supported by the National Basic Research Program of China under Grant Nos 2012CB619306,2010CB327504 and 2009CB320300the Natural Science Foundation of Jiangsu Province under Grant No BK2011010,the National Natural Science Foundation of China under Grant Nos 61274075,60936004,and 60990311the Ph.D.Program Foundation of Ministry of Education of China under Grant No 20110091110032.
文摘The effects of a polarization field on the current transport mechanisms in ultraviolet light emitting diodes(UV-LEDs)are studied by analyzing forward current-voltage(I–V)characteristics based on the experimental data and theoretical simulation.The results indicate that polarization electric field suppresses the diffusion current and meanwhile enhances the tunneling current in the metal-face UV LEDs under forward bias.The presence of a large polarization field in the deep UV-LEDs is responsible for the current transport mechanism dominated by the tunneling process at a moderate forward bias.
基金by the National Basic Research Program of China under Grant No 2011CB301900the National High-Technology Research and Development Program of China under Grant No 2009AA03A198+2 种基金the National Natural Science Foundation of China under Grant Nos 60721063,60676057,60731160628,60820106003,60990311 and 60906025the Natural Science Foundation of Jiangsu Province(BK2008019,BK2009255)the Research Funds from NJU-Yangzhou Institute of Opto-electronics.
文摘Blue-red complex light emitting InGaN/GaN multi-quantum well(MQW)structures are fabricated by metal organic chemical vapor deposition(MOCVD).The structures are grown on a 2-inch diameter(0001)oriented(c−face)sapphire substrate,which consists of an approximately 2-µm−thick GaN template and a five-period layer consisting of a 4.9-nm-thick In0.18Ga0.82N well layer and a GaN barrier layer.The surface morphology of the MQW structures is observed by an atomic force microscope(AFM),which indicates the presence of islands of several tens of nanometers in height on the surface.The high resolution x−ray diffraction(XRD)θ/2θscan is carried out on the symmetric(0002)of the InGaN/GaN MQW structures.At least four order satellite peaks presented in the XRD spectrum indicate that the thickness and alloy compositions of the individual quantum wells are repeatable throughout the active region.Besides the 364 nm GaN band edge emission,two main emissions of blue and amber light from these MQWs are found,which possibly originate from the carrier recombinations in the InGaN/GaN QWs and InGaN quasi-quantum dots embedded in the QWs.
基金Supported by the National Basic Research Program of China under Grant No 2010CB327504the National Natural Science Foundation of China under Grant Nos 60936004 and 11074280+1 种基金the Fundamental Research Funds for the Central Universities of China under Grant Nos JUSRP111A42,JUSRP211A37 and JUSRP20914the State Key Laboratory of ASIC&System under Grant No 11KF003.
文摘The forward current transport mechanism and Schottky barrier characteristics of a Ni/Au contact on n-GaN are studied by using temperature-dependent current-voltage(T–I–V)and capacitance-voltage(C–V)measurements.The low-forward-bias I–V curve of the Schottky junction is found to be dominated by trap-assisted tunneling below 400 K,and thus can not be used to deduce the Schottky barrier height(SBH)based on the thermionic emission(TE)model.On the other hand,TE transport mechanism dominates the high-forward-bias region and a modified I–V method is adopted to deduce the effective barrier height.It is found that the estimated SBH(~0.95 eV at 300 K)by the I–V method is~0.20 eV lower than that obtained by the C–V method,which is explained by a barrier inhomogeneity model over the Schottky contact area.
基金Supported by National Natural Science Foundation of China under Grant No 11004099,the Research Fund for the Doctoral Program of Higher Education of China under Grant No 20090091120048the State Key Laboratory of Acoustics,Chinese Academy of Sciences,and the PAPD of Jiangsu Higher Education Institutions.
文摘A model of fundamental torsional vibration of a cantilever with lateral friction is presented by using the harmonic balance method.The model demonstrates that the torsional vibration has close relations with the lateral friction threshold,the lateral contact stiffness and the torsional vibration amplitude of the cantilever.When the threshold is larger than a product of the stiffness and the vibration amplitude,the lateral friction is a linear force with the amplitude.If the lateral friction threshold is less than the product,the motions of the tip on the sample can be stick-slip or slip motions.The results are useful to optimize and to manipulate the fundamental flexural vibration of the piezo-cantilever,and give an insight into the tribological characterization of the interface in a resonance friction microscope.
基金Supported by the National Key Research and Development Program of China(Grant No.2016YFA0300803)the Open Research Fund of Jiangsu Provincial Key Laboratory for Nanotechnology+1 种基金the National Natural Science Foundation of China(Grant Nos.11774150 and 11874135)the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20170627)。
文摘We report a perpendicular magnetic tunnel junction(p MTJ)cell with a tunnel magnetoresistance(TMR)ratio of nearly 200%at room temperature based on Co Fe B/Ta/Co Fe B as the free layer(FL)and a synthetic antiferromagnetic(SAF)multilayer[Pt/Co]/Ru/[Pt/Co]/Ta/Co Fe B as the reference layer(RL).The field-driven magnetization switching measurements show that the p MTJs exhibit an anomalous TMR hysteresis loop.The spin-polarized layer Co Fe B of SAF-RL has a lower critical switching field than that of FL.The reason is related to the interlayer exchange coupling(IEC)through a moderately thick Ta spacer layer among SAF-RLs,which generates a moderate and negative bias magnetic field on Co Fe B of RL.However,the IEC among RLs has a negligible influence on the current-driven magnetization switching of FL and its magnetization dynamics.
基金Supported by the National Key Research and Development Program of China(Grant No.2016YFA0300803)the National Natural Science Foundation of China(Grant Nos.61427812 and 11774160)+2 种基金the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20192006)the Fundamental Research Funds for the Central Universities(Grant No.021014380113)the Program for New Century Excellent Talents in Universities of Ministry of Education of China(Grant No.NCET-13-0094).
文摘We investigate the magnetic damping parameter of Fe 1−x Cr x thin films using the time-resolved magneto-optical Kerr effect technique.It is demonstrated that the overall effective damping parameter is enhanced with the increasing Cr concentration.The effective damping at high fieldα0 is found to be significantly enhanced when increasing the Cr concentration with theα0=0.159 in the Fe 45 Cr 55 enhanced by 562%compared with that ofα0=0.024 in the pure Fe film.This study provides a new approach of controlling the effective damping parameter with a desired magnitude via varying Cr composition.
