|
1
|
Polarization—Induced Charges in Modulation—Doped AlxGa1—xN／GaN Heterostructures Through Capacitance—Voltage Profiling |
周玉刚
T.Someya
等
|
《Chinese Physics Letters》
SCIE
CAS
CSCD
|
2002 |
0 |
|
|
2
|
Pt／Au Schottky Contacts to Modulation—Doped AlxGa1—xN／GaN Heterostructures Using Pre—deposition Surface Treatment |
刘杰
T.Someya
等
|
《Chinese Physics Letters》
SCIE
CAS
CSCD
|
2002 |
0 |
|
