There is currently great optimism within the electronics community that gallium oxide(Ga_(2)O_(3)) ultra-wide bandgap semiconductors have unprecedented prospects for eventually revolutionizing a rich variety of power ...There is currently great optimism within the electronics community that gallium oxide(Ga_(2)O_(3)) ultra-wide bandgap semiconductors have unprecedented prospects for eventually revolutionizing a rich variety of power electronic applications. Specially, benefiting from its ultra-high bandgap of around 4.8 eV, it is expected that the emerging Ga_(2)O_(3) technology would offer an exciting platform to deliver massively enhanced device performance for power electronics and even completely new applications.展开更多
Gallium oxide(Ga_(2)O_(3))has garnered world-wide atten-tion as an ultrawide-bandgap semiconductor material from the area of power electronics and DUV optical devices benefit-ing from its outstanding electronic and op...Gallium oxide(Ga_(2)O_(3))has garnered world-wide atten-tion as an ultrawide-bandgap semiconductor material from the area of power electronics and DUV optical devices benefit-ing from its outstanding electronic and optoelectronic proper-ties.For one thing,since Ga_(2)O_(3)features high critical break-down field of 8 MV/cm and Baliga’s figure of merit(BFOM)of 3444,it is a promising candidate for advanced high-power applications.For another thing,due to the bandgap directly corresponding to the deep-ultraviolet(DUV)region,Ga_(2)O_(3)is widely used in DUV optoelectronic devices.展开更多
We have designed and fabricated a polarization light-emitting diode(LED)utilizing asymmetric nanograting metasurfaces,characterized by distinct grating structures on the top and bottom surfaces.Experimental results in...We have designed and fabricated a polarization light-emitting diode(LED)utilizing asymmetric nanograting metasurfaces,characterized by distinct grating structures on the top and bottom surfaces.Experimental results indicate a 34.66%improvement in polarization light extraction efficiency within±60°relative to traditional metal-coated sapphire substrates.The measured average extinction ratio surpasses 21.62 d B within this angular range.By incorporating a half-wave plate function at the bottom through asymmetric nanograting metasurfaces,this LED design streamlines fabrication processes,reduces complexity,and enhances the efficiency of linearly polarized light.This innovative approach presents a promising solution for micro-LED failure analysis,advanced optical displays,communication systems,and photonic computing applications.展开更多
Due to its high critical breakdown electrical field and the availability of large-scale single crystal substrates,Gallium oxide(Ga_(2)O_(3))holds great promise for power electronic and radio frequency(RF)applications....Due to its high critical breakdown electrical field and the availability of large-scale single crystal substrates,Gallium oxide(Ga_(2)O_(3))holds great promise for power electronic and radio frequency(RF)applications.While significant advancements have been made in Ga_(2)O_(3)material and device research,there are still challenges related to its ultra-low thermal conductivity and the lack of effective p-type doping methods.These limitations hinder the fabrication of complex device structures and the enhancement of device performance.This review aims to provide an introduction to the research development of Ga_(2)O_(3)heterogeneous and heterojunction power devices based on heterogeneous integration technology.By utilizing ion-cutting and wafer bonding techniques,heterogeneous substrates with high thermal conductivity have been realized,offering a viable solution to overcome the thermal limitations of Ga_(2)O_(3).Compared to Ga_(2)O_(3)bulk devices,Ga_(2)O_(3)devices fabricated on heterogeneous substrates integrated with SiC or Si exhibit superior thermal properties.Power diodes and superjunction transistors based on p-NiO/n-Ga_(2)O_(3)heterojunctions on heterogeneous substrates have demonstrated outstanding electrical characteristics,presenting a feasible method for the development of bipolar devices.The technologies of heterogeneous integration and heterojunction address critical issues related to Ga_(2)O_(3),thereby advancing the commercial applications of Ga_(2)O_(3)devices in power and RF fields.By integrating Ga_(2)O_(3)with other materials and leveraging heterojunction interfaces,researchers and engineers have made significant progress in improving device performance and overcoming limitations.These advancements pave the way for the wider adoption of Ga_(2)O_(3)-based devices in various power and RF applications.展开更多
文摘There is currently great optimism within the electronics community that gallium oxide(Ga_(2)O_(3)) ultra-wide bandgap semiconductors have unprecedented prospects for eventually revolutionizing a rich variety of power electronic applications. Specially, benefiting from its ultra-high bandgap of around 4.8 eV, it is expected that the emerging Ga_(2)O_(3) technology would offer an exciting platform to deliver massively enhanced device performance for power electronics and even completely new applications.
文摘Gallium oxide(Ga_(2)O_(3))has garnered world-wide atten-tion as an ultrawide-bandgap semiconductor material from the area of power electronics and DUV optical devices benefit-ing from its outstanding electronic and optoelectronic proper-ties.For one thing,since Ga_(2)O_(3)features high critical break-down field of 8 MV/cm and Baliga’s figure of merit(BFOM)of 3444,it is a promising candidate for advanced high-power applications.For another thing,due to the bandgap directly corresponding to the deep-ultraviolet(DUV)region,Ga_(2)O_(3)is widely used in DUV optoelectronic devices.
基金supported by the National Key Research and Development Program of China(No.2022YFB2802801)the National Natural Science Foundation of China(No.62304239)+2 种基金the Youth Innovation Promotion Association of the Chinese Academy of Sciences(No.2021320)the Basic Research Pilot Project of Suzhou(No.SJC2022005)the Key lab of Advanced Optical Manufacturing Technologies of Jiangsu Province,Soochow University(No.KJS2335)。
文摘We have designed and fabricated a polarization light-emitting diode(LED)utilizing asymmetric nanograting metasurfaces,characterized by distinct grating structures on the top and bottom surfaces.Experimental results indicate a 34.66%improvement in polarization light extraction efficiency within±60°relative to traditional metal-coated sapphire substrates.The measured average extinction ratio surpasses 21.62 d B within this angular range.By incorporating a half-wave plate function at the bottom through asymmetric nanograting metasurfaces,this LED design streamlines fabrication processes,reduces complexity,and enhances the efficiency of linearly polarized light.This innovative approach presents a promising solution for micro-LED failure analysis,advanced optical displays,communication systems,and photonic computing applications.
基金supported by grants from the National Natural Science Foundation of China(62293522,62293521,62204255 and 62234007).
文摘Due to its high critical breakdown electrical field and the availability of large-scale single crystal substrates,Gallium oxide(Ga_(2)O_(3))holds great promise for power electronic and radio frequency(RF)applications.While significant advancements have been made in Ga_(2)O_(3)material and device research,there are still challenges related to its ultra-low thermal conductivity and the lack of effective p-type doping methods.These limitations hinder the fabrication of complex device structures and the enhancement of device performance.This review aims to provide an introduction to the research development of Ga_(2)O_(3)heterogeneous and heterojunction power devices based on heterogeneous integration technology.By utilizing ion-cutting and wafer bonding techniques,heterogeneous substrates with high thermal conductivity have been realized,offering a viable solution to overcome the thermal limitations of Ga_(2)O_(3).Compared to Ga_(2)O_(3)bulk devices,Ga_(2)O_(3)devices fabricated on heterogeneous substrates integrated with SiC or Si exhibit superior thermal properties.Power diodes and superjunction transistors based on p-NiO/n-Ga_(2)O_(3)heterojunctions on heterogeneous substrates have demonstrated outstanding electrical characteristics,presenting a feasible method for the development of bipolar devices.The technologies of heterogeneous integration and heterojunction address critical issues related to Ga_(2)O_(3),thereby advancing the commercial applications of Ga_(2)O_(3)devices in power and RF fields.By integrating Ga_(2)O_(3)with other materials and leveraging heterojunction interfaces,researchers and engineers have made significant progress in improving device performance and overcoming limitations.These advancements pave the way for the wider adoption of Ga_(2)O_(3)-based devices in various power and RF applications.
