This study investigates the impact of oxide bottom electrode(BE)material and orientation on the resistive switching(RS)characteristics of Al/ZrO_(2)-based ReRAM devices.Devices with different oxide BEs,including(400)-...This study investigates the impact of oxide bottom electrode(BE)material and orientation on the resistive switching(RS)characteristics of Al/ZrO_(2)-based ReRAM devices.Devices with different oxide BEs,including(400)-and(222)-oriented ITO BEs deposited under pure argon and argon–oxygen(20%O_(2))sputtering atmospheres,as well as SrRuO_(3)(SRO),show distinct RS behaviors.The Al/ZrO_(2)/(400)-ITO and Al/ZrO_(2)/SRO devices demonstrate stable bipolar RS performance,with(400)-ITO enabling an abrupt reset process,a wider memory window(>10^(4)),and superior stability,while SRO devices exhibit gradual reset transitions with lower power consumption.Furthermore,the crystallographic orientation control applied to ITO BE significantly affects the V_(O) dynamics and RS performance,with(222)-ITO devices exhibiting irreversible RS behavior.It is irrefutable that BE material and its orientation can strongly influence RS performance by modulating the V_(O) dynamics,electric field distribution,and conductive filament behavior.These findings underscore the importance of BE properties in optimizing ReRAM performance and provide valuable guidance for the development of high-efficiency memory devices.展开更多
In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain（S/D） series resistance in operating amorphous indium–gallium–zinc–oxide（a-IGZO） thin-film transist...In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain（S/D） series resistance in operating amorphous indium–gallium–zinc–oxide（a-IGZO） thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.展开更多
基金supported in part by the National Natural Science Foundation of China(Grant Nos.51602160 and 61605086)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20150842)the Talent Project of Nanjing University of Posts and Telecommunications(NUPTSF)(Grant No.NY222127)。
文摘This study investigates the impact of oxide bottom electrode(BE)material and orientation on the resistive switching(RS)characteristics of Al/ZrO_(2)-based ReRAM devices.Devices with different oxide BEs,including(400)-and(222)-oriented ITO BEs deposited under pure argon and argon–oxygen(20%O_(2))sputtering atmospheres,as well as SrRuO_(3)(SRO),show distinct RS behaviors.The Al/ZrO_(2)/(400)-ITO and Al/ZrO_(2)/SRO devices demonstrate stable bipolar RS performance,with(400)-ITO enabling an abrupt reset process,a wider memory window(>10^(4)),and superior stability,while SRO devices exhibit gradual reset transitions with lower power consumption.Furthermore,the crystallographic orientation control applied to ITO BE significantly affects the V_(O) dynamics and RS performance,with(222)-ITO devices exhibiting irreversible RS behavior.It is irrefutable that BE material and its orientation can strongly influence RS performance by modulating the V_(O) dynamics,electric field distribution,and conductive filament behavior.These findings underscore the importance of BE properties in optimizing ReRAM performance and provide valuable guidance for the development of high-efficiency memory devices.
基金Project supported by the Key Industrial R&D Program of Jiangsu Province,China(Grant No.BE2015155)the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province,Chinathe Fundamental Research Funds for the Central Universities,China(Grant No.021014380033)
文摘In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain（S/D） series resistance in operating amorphous indium–gallium–zinc–oxide（a-IGZO） thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.
