The post-Moore's era has boosted the progress in carbon nanotube-based transistors.Indeed,the 5 G communication and cloud computing stimulate the research in applications of carbon nanotubes in electronic devices....The post-Moore's era has boosted the progress in carbon nanotube-based transistors.Indeed,the 5 G communication and cloud computing stimulate the research in applications of carbon nanotubes in electronic devices.In this perspective,we deliver the readers with the latest trends in carbon nanotube research,including high-frequency transistors,biomedical sensors and actuators,brain–machine interfaces,and flexible logic devices and energy storages.Future opportunities are given for calling on scientists and engineers into the emerging topics.展开更多
高容量的SiO (SO)合金基材料是最有希望的下一代锂离子电池负极之一.使用碳纳米管(CNTs)导电添加剂,虽然可以有效地解决SO较差的循环寿命这一难题,然而除了动力学因素之外,其它潜在的作用机理目前仍不明确.在本工作中,一系列的测试结果...高容量的SiO (SO)合金基材料是最有希望的下一代锂离子电池负极之一.使用碳纳米管(CNTs)导电添加剂,虽然可以有效地解决SO较差的循环寿命这一难题,然而除了动力学因素之外,其它潜在的作用机理目前仍不明确.在本工作中,一系列的测试结果表明CNTs可以使电极在循环后依然维持完整的导电网络,确保均匀的电化学反应.CNTs也使得电极局部的体积膨胀得到了抑制,从而避免了固态电解质界面的不断生长,活性材料从集流体剥离,甚至析锂.得益于CNTs的上述作用, SO-CNTs负极在0.5 C (1 C=1600 mA g^(-1))下可以稳定循环200次,其容量保持率为96.2%. CNTs的作用机理也进一步地在商业化的SO/石墨复合负极(SO650-CNTs, 1 C=650 mA g^(-1))中得到了验证,SO650-CNTs在1 C下循环400次后容量保持率为80.6%.本工作为导电添加剂的作用机理提出了新的见解,并将有助于加速合金类负极的商业化进程.展开更多
The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor technologies.Group-10 noble metal dichalcogenides(e.g.,PtS_(2),PtSe_(2),PdS_(2),and PdSe_(2))have been li...The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor technologies.Group-10 noble metal dichalcogenides(e.g.,PtS_(2),PtSe_(2),PdS_(2),and PdSe_(2))have been listed into two-dimensional(2D)materials toolkit to assemble van der Waals heterostructures.Among them,PdSe_(2) demonstrates advantages of high stability in air,high mobility,and wide tunable bandgap.However,the regulation of p-type doping of PdSe_(2) remains unsolved problem prior to fabricating p–n junction as a fundamental platform of semiconductor physics.Besides,a quantitative method for the controllable doping of PdSe_(2) is yet to be reported.In this study,the doping level of PdSe_(2) was correlated with the concentration of Lewis acids,for example,SnCl_(4),used for soaking.Considering the transfer characteristics,the threshold voltage(the gate voltage corresponding to the minimum drain current)increased after SnCl_(4) soaking treatment.PdSe_(2) transistors were soaked in SnCl_(4) solutions with five different concentrations.The threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation equation.This study provides in-depth insights into the controllable p-type doping of PdSe_(2).It may also push forward the research of the regulation of conductivity behaviors of 2D materials.展开更多
Flexible electronics has emerged as a continuously growing field of study.Two-dimensional(2D)materials often act as conductors and electrodes in elec-tronic devices,holding significant promise in the design of high-pe...Flexible electronics has emerged as a continuously growing field of study.Two-dimensional(2D)materials often act as conductors and electrodes in elec-tronic devices,holding significant promise in the design of high-performance,flexible electronics.Numerous studies have focused on harnessing the potential of these materials for the development of such devices.However,to date,the incorporation of 2D materials in flexible electronics has rarely been summa-rized or reviewed.Consequently,there is an urgent need to develop compre-hensive reviews for rapid updates on this evolving landscape.This review covers progress in complex material architectures based on 2D materials,including interfaces,heterostructures,and 2D/polymer composites.Addition-ally,it explores flexible and wearable energy storage and conversion,display and touch technologies,and biomedical applications,together with integrated design solutions.Although the pursuit of high-performance and high-sensitivity instruments remains a primary objective,the integrated design of flexible electronics with 2D materials also warrants consideration.By combin-ing multiple functionalities into a singular device,augmented by machine learning and algorithms,we can potentially surpass the performance of existing wearable technologies.Finally,we briefly discuss the future trajectory of this burgeoning field.This review discusses the recent advancements in flex-ible sensors made from 2D materials and their applications in integrated archi-tecture and device design.展开更多
基金the financial funds of the National Key Research and Development Program of China(2016YFA02019042017YFB0405400)+12 种基金the Project of“20 items of University”of Jinan(2018GXRC031)NSFC(No.52022037)Taishan Scholars Project Special Funds(tsqn201812083)the NSFC(51802116)supported by NSFC(52002165)the Natural Science Foundation of Shandong Province,China(Grant No.ZR2019BEM040)Beijing National Laboratory for Molecular Science(BNLMS202013)Guangdong Provincial Natural Science Foundation(2021A1515010229)Shenzhen Basic Research Project(JCYJ20210317150714001)the Innovation Project for Guangdong Provincial Department of Education(2019KTSCX155)the National Science Foundation China(NSFC,Project 52071225)the National Science Center and the Czech Republic under the ERDF program“Institute of Environmental Technology—Excellent Research”(No.CZ.02.1.01/0.0/0.0/16_019/0000853)the Sino-German Research Institute for support(Project No.GZ 1400)。
文摘The post-Moore's era has boosted the progress in carbon nanotube-based transistors.Indeed,the 5 G communication and cloud computing stimulate the research in applications of carbon nanotubes in electronic devices.In this perspective,we deliver the readers with the latest trends in carbon nanotube research,including high-frequency transistors,biomedical sensors and actuators,brain–machine interfaces,and flexible logic devices and energy storages.Future opportunities are given for calling on scientists and engineers into the emerging topics.
基金supported by the National Natural Science Foundation of China (52071225)the European Regional Development Fund for the “Institute of Environmental Technology-Excellent Research” (CZ.02.1.01/0.0/0.0/16_019/0000853) from Czech Republic+7 种基金the Sino-German Research Institute for their support (Project GZ 1400)the National Natural Science Foundation of China (11874044)the National Natural Science Foundation of China (51702225)Beijing Municipal Science and Technology Commission (Z161100002116020)the Natural Science Foundation of Jiangsu Province (BK20170336)the National Natural Science Foundation of China (51972220 and 51572181)the National Key Research and Development Program of China (2016YFB0100200)the Key University Science Research Project of Jiangsu Province (20KJA480003)。
文摘高容量的SiO (SO)合金基材料是最有希望的下一代锂离子电池负极之一.使用碳纳米管(CNTs)导电添加剂,虽然可以有效地解决SO较差的循环寿命这一难题,然而除了动力学因素之外,其它潜在的作用机理目前仍不明确.在本工作中,一系列的测试结果表明CNTs可以使电极在循环后依然维持完整的导电网络,确保均匀的电化学反应.CNTs也使得电极局部的体积膨胀得到了抑制,从而避免了固态电解质界面的不断生长,活性材料从集流体剥离,甚至析锂.得益于CNTs的上述作用, SO-CNTs负极在0.5 C (1 C=1600 mA g^(-1))下可以稳定循环200次,其容量保持率为96.2%. CNTs的作用机理也进一步地在商业化的SO/石墨复合负极(SO650-CNTs, 1 C=650 mA g^(-1))中得到了验证,SO650-CNTs在1 C下循环400次后容量保持率为80.6%.本工作为导电添加剂的作用机理提出了新的见解,并将有助于加速合金类负极的商业化进程.
基金the Natural Science Foundation of Shandong Province for Excellent Young Scholars(No.ZR2022YQ41)the fund(No.SKT2203)from the State Key Laboratories of Transducer Technology,Shanghai Institute of Microsystem and Information Technology+9 种基金Chinese Academy of Sciences for support.This work was partially supported by the National Key Research and Development Program of China(No.2022YFE0124200)the National Natural Science Foundation of China(No.U2241221)W.J.Z.thanks the Major innovation project of Shandong Province(No.2021CXGC010603)the National Natural Science Foundation of China(No.52022037)the Taishan Scholars Project Special Funds(No.TSQN201812083)The project was supported by the Foundation(No.GZKF202107)of State Key Laboratory of Biobased Material and Green PapermakingQilu University of Technology,Shandong Academy of Sciences.M.H.R.thanks the National Natural Science Foundation of China(No.52071225)the National Science Center and the Czech Republic under the ERDF program“Institute of Environmental Technology-Excellent Research”(No.CZ.02.1.01/0.0/0.0/16_019/0000853)the Sino-German Research Institute(No.GZ 1400)for supportS.X.H.thanks the National Natural Science Foundation of China(Nos.21976014 and 22276013)for funding,and thanks the Tianhe2-JK HPC for generous computer time.
文摘The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor technologies.Group-10 noble metal dichalcogenides(e.g.,PtS_(2),PtSe_(2),PdS_(2),and PdSe_(2))have been listed into two-dimensional(2D)materials toolkit to assemble van der Waals heterostructures.Among them,PdSe_(2) demonstrates advantages of high stability in air,high mobility,and wide tunable bandgap.However,the regulation of p-type doping of PdSe_(2) remains unsolved problem prior to fabricating p–n junction as a fundamental platform of semiconductor physics.Besides,a quantitative method for the controllable doping of PdSe_(2) is yet to be reported.In this study,the doping level of PdSe_(2) was correlated with the concentration of Lewis acids,for example,SnCl_(4),used for soaking.Considering the transfer characteristics,the threshold voltage(the gate voltage corresponding to the minimum drain current)increased after SnCl_(4) soaking treatment.PdSe_(2) transistors were soaked in SnCl_(4) solutions with five different concentrations.The threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation equation.This study provides in-depth insights into the controllable p-type doping of PdSe_(2).It may also push forward the research of the regulation of conductivity behaviors of 2D materials.
基金supported by National Key Research and Development Program(No.2022YFE0124200)National Natural Science Foundation of China(No.U2241221)+9 种基金J.P.thanks the Natural Science Foundation of Shandong Province for Excellent Young Scholars(YQ2022041)the fund(No.SKT2203)from the State Key Laboratories of Transducer TechnologyShanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences for support.W.Z.thanks the Major Scientific and Technological Innovation Project of Shandong Province(2021CXGC010603)NSFC(No.52022037)Taishan Scholars Project Special Funds(TSQN201812083)The Project was supported by the Foundation(No.GZKF202107)of State Key Laboratory of Biobased Material and Green PapermakingQilu University of Technology,Shandong Academy of Sciences.M.H.R.thanks NSFC(No.52071225)the National Science Center and the Czech Republic under the European Regional Development Fund(ERDF)“Institute of Environmental Technology-Excellent Research”(No.CZ.02.1.01/0.0/0.0/16_019/0000853)the SinoGerman Center for Research Promotion(SGC)for support(No.GZ 1400).
文摘Flexible electronics has emerged as a continuously growing field of study.Two-dimensional(2D)materials often act as conductors and electrodes in elec-tronic devices,holding significant promise in the design of high-performance,flexible electronics.Numerous studies have focused on harnessing the potential of these materials for the development of such devices.However,to date,the incorporation of 2D materials in flexible electronics has rarely been summa-rized or reviewed.Consequently,there is an urgent need to develop compre-hensive reviews for rapid updates on this evolving landscape.This review covers progress in complex material architectures based on 2D materials,including interfaces,heterostructures,and 2D/polymer composites.Addition-ally,it explores flexible and wearable energy storage and conversion,display and touch technologies,and biomedical applications,together with integrated design solutions.Although the pursuit of high-performance and high-sensitivity instruments remains a primary objective,the integrated design of flexible electronics with 2D materials also warrants consideration.By combin-ing multiple functionalities into a singular device,augmented by machine learning and algorithms,we can potentially surpass the performance of existing wearable technologies.Finally,we briefly discuss the future trajectory of this burgeoning field.This review discusses the recent advancements in flex-ible sensors made from 2D materials and their applications in integrated archi-tecture and device design.
