We have analyzed the effective oxide thickness （EOT） of the dielectric material for which we have optimum performance and the output characteristics of the silicon nanowire transistors by replacing the traditional S...We have analyzed the effective oxide thickness （EOT） of the dielectric material for which we have optimum performance and the output characteristics of the silicon nanowire transistors by replacing the traditional Si02 gate insulator with a material that has a much higher dielectric constant （high-k） gate, materials like Si3N4, Al2O3, Y2O3 and HfO2. We have also analyzed the channel conductance, the effect of a change in thickness, the average velocity of the charge carrier and the conductance efficiency in order to study the performance of silicon nanowire transistors in the nanometer region. The analysis was performed using the Fettoy, a numerical simulator for ballistic nanowire transistors using a simple top of the barrier （Natori） approach, which is composed of several matlab scripts. Our results show that hafnium oxide （HfO2） gate insulator material provides good thermal stability, a high recrystallization temperature and better interface qualities when compared with other gate insulator materials; also the effective oxide thickness of lifO2 is found to be 0.4 nm.展开更多
A compact model is proposed to derive the charge density of the AlInSb/InSb HEMT devices by con- sidering the variation of Fermi level, the first subband, the second subband and sheet carrier charge density with appli...A compact model is proposed to derive the charge density of the AlInSb/InSb HEMT devices by con- sidering the variation of Fermi level, the first subband, the second subband and sheet carrier charge density with applied gate voltage. The proposed model considers the Fermi level dependence of charge density and vice versa. The analytical results generated by the proposed model are compared and they agree well with the experimental results. The developed model can be used to implement a physics based compact model for an InSb HEMT device in SPICE applications.展开更多
We have developed a 2D analytical model for the single gate AllnSb/lnSb HEMT device by solving the Poisson equation using the parabolic approximation method. The developed model analyses the device perfomance by calcu...We have developed a 2D analytical model for the single gate AllnSb/lnSb HEMT device by solving the Poisson equation using the parabolic approximation method. The developed model analyses the device perfomance by calculating the parameters such as surface potential, electric field distribution and drain current. The high mobility of the AlInSb/InSb quantum makes this HEMT ideal for high frequency, high power applications. The working of the single gate AllnSb/InSb HEMT device is studied by considering the variation of gate source voltage, drain source voltage, and channel length under the gate region and temperature. The carrier transport efficiency is improved by uniform electric field along the channel and the peak values near the source and drain regions. The results from the analytical model are compared with that of numerical simulations （TCAD） and a good agreement between them is achieved.展开更多
基金supported by the Council of Scientific & Industrial Research(CSIR),India under the SRF scheme(No.08/237(0005)/2012-EMR-I)
文摘We have analyzed the effective oxide thickness （EOT） of the dielectric material for which we have optimum performance and the output characteristics of the silicon nanowire transistors by replacing the traditional Si02 gate insulator with a material that has a much higher dielectric constant （high-k） gate, materials like Si3N4, Al2O3, Y2O3 and HfO2. We have also analyzed the channel conductance, the effect of a change in thickness, the average velocity of the charge carrier and the conductance efficiency in order to study the performance of silicon nanowire transistors in the nanometer region. The analysis was performed using the Fettoy, a numerical simulator for ballistic nanowire transistors using a simple top of the barrier （Natori） approach, which is composed of several matlab scripts. Our results show that hafnium oxide （HfO2） gate insulator material provides good thermal stability, a high recrystallization temperature and better interface qualities when compared with other gate insulator materials; also the effective oxide thickness of lifO2 is found to be 0.4 nm.
基金Project supported by the Council of Scientific & Industrial Research(CSIR),India under the Senior Research Fellowship Scheme(No.08/237(0005)/2012-EMR-I)
文摘A compact model is proposed to derive the charge density of the AlInSb/InSb HEMT devices by con- sidering the variation of Fermi level, the first subband, the second subband and sheet carrier charge density with applied gate voltage. The proposed model considers the Fermi level dependence of charge density and vice versa. The analytical results generated by the proposed model are compared and they agree well with the experimental results. The developed model can be used to implement a physics based compact model for an InSb HEMT device in SPICE applications.
基金supported by the Council of Scientific and Industrial Research(CSIR),India,under the SRF scheme(sanction letter No.08/237(0005)/2012-EMR-I)
文摘We have developed a 2D analytical model for the single gate AllnSb/lnSb HEMT device by solving the Poisson equation using the parabolic approximation method. The developed model analyses the device perfomance by calculating the parameters such as surface potential, electric field distribution and drain current. The high mobility of the AlInSb/InSb quantum makes this HEMT ideal for high frequency, high power applications. The working of the single gate AllnSb/InSb HEMT device is studied by considering the variation of gate source voltage, drain source voltage, and channel length under the gate region and temperature. The carrier transport efficiency is improved by uniform electric field along the channel and the peak values near the source and drain regions. The results from the analytical model are compared with that of numerical simulations （TCAD） and a good agreement between them is achieved.
