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850 nm Implant-confined VCSEL Temperature Characteristics
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作者 LILin ZHONGJing-chang LIUWen-li ZHAOYing-jie ZHANGYong-ming SUWei 《Semiconductor Photonics and Technology》 CAS 2004年第1期35-37,共3页
The temperature characteristics of VCSEL using proton implantation are described,compared with its edge-emitting counterpart.Implant-confined VCSEL operation has been realized up to 120 ℃.These records of high operat... The temperature characteristics of VCSEL using proton implantation are described,compared with its edge-emitting counterpart.Implant-confined VCSEL operation has been realized up to 120 ℃.These records of high operating temperature are caused by high characteristic temperature. The relevant physical mechanisms including their dependence on temperature and carrier density are considered. The temperature sensitivity of the threshold current is not strongly increasing with higher temperature. 展开更多
关键词 Temperature characteristic Vertical-cavity surface-emitting lasers Optical losses Laser measurements Laser thermal factors
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