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Open-Gate Undoped-AIGaN-GaN HEMT Structure for pH Sensing Application
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作者 Sharifabad Maneea Eizadi Zainal Abidin Mastura Shafinaz +5 位作者 Mustafa Farahiyah Hashim Abdul Manaf Abd Rahman Shaharin Fadzli Abdul Rahman Abdul Rahim Qindeel Rabia Omar Nurul Afzan 《材料科学与工程(中英文版)》 2010年第7期1-6,共6页
关键词 HEMT器件 GaN pH值 掺杂 遥感应用 结构 AN型 高电子迁移率晶体管
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Power Conversion Efficiency of Schottky Diode Fabricated on AIGaAs/GaAs Heterostructure
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作者 Parimon Norfarariyanti Mustafa Farahiyah +5 位作者 Hashim Abdui Manaf Abd Rahman Shaharin Fadzli Abdul Rahman Abdul Rahim Osman Mohd Nizam Abd Aziz Azlan Hashim Md. Roslan 《材料科学与工程(中英文版)》 2010年第6期60-65,共6页
关键词 肖特基二极管 转换效率 异质结构 微波功率 砷化镓 高电子迁移率晶体管 制备 HEMT器件
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NP-Domino, Ultra-Low-Voltage, High-Speed, Dual-Rail, CMOS NOR Gates
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作者 Ali Dadashi Omid Mirmotahari Yngvar Berg 《Circuits and Systems》 2016年第8期1916-1926,共11页
In this paper, novel ultra low voltage (ULV) dual-rail NOR gates are presented which use the semi-floating-gate (SFG) structure to speed up the logic circuit. Higher speed in the lower supply voltages and robustness a... In this paper, novel ultra low voltage (ULV) dual-rail NOR gates are presented which use the semi-floating-gate (SFG) structure to speed up the logic circuit. Higher speed in the lower supply voltages and robustness against the input signal delay variations are the main advantages of the proposed gates in comparison to the previously reported domino dual-rail NOR gates. The simulation results in a typical TSMC 90 nm CMOS technology show that the proposed NOR gate is more than 20 times faster than conventional dual-rail NOR gate. 展开更多
关键词 Ultra Low Voltage (ULV) Semi-Floating-Gate (SFG) Speed NOR Gate Monte Carlo TSMC 90 nm CMOS
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