The effect of tensile uniaxial strain on the non-parabolic electronic band structure of armchair graphene nanoribbon（AGNR） is investigated.In addition,the density of states and the carrier statistic based on the tig...The effect of tensile uniaxial strain on the non-parabolic electronic band structure of armchair graphene nanoribbon（AGNR） is investigated.In addition,the density of states and the carrier statistic based on the tight-binding Hamiltonian are modeled analytically.It is found that the property of AGNR in the non-parabolic band region is varied by the strain.The tunable energy band gap in AGNR upon strain at the minimum energy is described for each of n-AGNR families in the non-parabolic approximation.The behavior of AGNR in the presence of strain is attributed to the breakable AGNR electronic band structure,which varies the physical properties from its normality.The linear relation between the energy gap and the electrical properties is featured to further explain the characteristic of the deformed AGNR upon strain.展开更多
In this paper, we present a solution to the ultra low voltage inverter by adding a keeper transistor in order to make the semi-floating-gate more stable and to reduce the current dissipation. Moreover, we also present...In this paper, we present a solution to the ultra low voltage inverter by adding a keeper transistor in order to make the semi-floating-gate more stable and to reduce the current dissipation. Moreover, we also present a differential ULV inverter and elaborate on the reliability and fault tolerance of the gate. The differential ULV gate compared to both a former ULV gate and standard CMOS are given. The results are obtained through Monte-Carlo simulations.展开更多
In this paper, novel ultra low voltage (ULV) dual-rail NOR gates are presented which use the semi-floating-gate (SFG) structure to speed up the logic circuit. Higher speed in the lower supply voltages and robustness a...In this paper, novel ultra low voltage (ULV) dual-rail NOR gates are presented which use the semi-floating-gate (SFG) structure to speed up the logic circuit. Higher speed in the lower supply voltages and robustness against the input signal delay variations are the main advantages of the proposed gates in comparison to the previously reported domino dual-rail NOR gates. The simulation results in a typical TSMC 90 nm CMOS technology show that the proposed NOR gate is more than 20 times faster than conventional dual-rail NOR gate.展开更多
This paper describes a standing-wave interferometer with two laser sources of different wavelengths,diametrically opposed and emitting towards each other.The resulting standing wave has an intensity profile which is m...This paper describes a standing-wave interferometer with two laser sources of different wavelengths,diametrically opposed and emitting towards each other.The resulting standing wave has an intensity profile which is moving with a constant velocity,and is directly detected inside the laser beam by two thin and transparent photo sensors.The first sensor is at a fixed position,serving as a phase reference for the second one which is moved along the optical axis,resulting in a frequency shift,proportional to the velocity.The phase difference between both sensors is evaluated for the purpose of interferometric length measurements.展开更多
The field of optical lithography is subject to intense research and has gained enormous improvement.However,the effort necessary for creating structures at the size of 20 nm and below is considerable using conventiona...The field of optical lithography is subject to intense research and has gained enormous improvement.However,the effort necessary for creating structures at the size of 20 nm and below is considerable using conventional technologies.This effort and the resulting financial requirements can only be tackled by few global companies and thus a paradigm change for the semiconductor industry is conceivable:custom design and solutions for specific applications will dominate future development(Fritze in:Panning EM,Liddle JA(eds)Novel patterning technologies.International society for optics and photonics.SPIE,Bellingham,2021.https://doi.org/10.1117/12.2593229).For this reason,new aspects arise for future lithography,which is why enormous effort has been directed to the development of alternative fabrication technologies.Yet,the technologies emerging from this process,which are promising for coping with the current resolution and accuracy challenges,are only demonstrated as a proof-of-concept on a lab scale of several square micrometers.Such scale is not adequate for the requirements of modern lithography;therefore,there is the need for new and alternative cross-scale solutions to further advance the possibilities of unconventional nanotechnologies.Similar challenges arise because of the technical progress in various other fields,realizing new and unique functionalities based on nanoscale effects,e.g.,in nanophotonics,quantum computing,energy harvesting,and life sciences.Experimental platforms for basic research in the field of scale-spanning nanomeasuring and nanofabrication are necessary for these tasks,which are available at the Technische Universitiit Ilmenau in the form of nanopositioning and nanomeasuring(NPM)machines.With this equipment,the limits of technical structurability are explored for high-performance tip-based and laser-based processes for enabling real 3D nanofabrication with the highest precision in an adequate working range of several thousand cubic millimeters.展开更多
基金Project supported by the Ministry of Higher Education(MOHE)Malaysia under the Fundamental Research Grant Scheme(FRGS)(Grant No.Q.J130000.7823.4F477)
文摘The effect of tensile uniaxial strain on the non-parabolic electronic band structure of armchair graphene nanoribbon（AGNR） is investigated.In addition,the density of states and the carrier statistic based on the tight-binding Hamiltonian are modeled analytically.It is found that the property of AGNR in the non-parabolic band region is varied by the strain.The tunable energy band gap in AGNR upon strain at the minimum energy is described for each of n-AGNR families in the non-parabolic approximation.The behavior of AGNR in the presence of strain is attributed to the breakable AGNR electronic band structure,which varies the physical properties from its normality.The linear relation between the energy gap and the electrical properties is featured to further explain the characteristic of the deformed AGNR upon strain.
文摘In this paper, we present a solution to the ultra low voltage inverter by adding a keeper transistor in order to make the semi-floating-gate more stable and to reduce the current dissipation. Moreover, we also present a differential ULV inverter and elaborate on the reliability and fault tolerance of the gate. The differential ULV gate compared to both a former ULV gate and standard CMOS are given. The results are obtained through Monte-Carlo simulations.
文摘In this paper, novel ultra low voltage (ULV) dual-rail NOR gates are presented which use the semi-floating-gate (SFG) structure to speed up the logic circuit. Higher speed in the lower supply voltages and robustness against the input signal delay variations are the main advantages of the proposed gates in comparison to the previously reported domino dual-rail NOR gates. The simulation results in a typical TSMC 90 nm CMOS technology show that the proposed NOR gate is more than 20 times faster than conventional dual-rail NOR gate.
基金funded by the German Federal Ministry of Education and Research under contract 03V0235.
文摘This paper describes a standing-wave interferometer with two laser sources of different wavelengths,diametrically opposed and emitting towards each other.The resulting standing wave has an intensity profile which is moving with a constant velocity,and is directly detected inside the laser beam by two thin and transparent photo sensors.The first sensor is at a fixed position,serving as a phase reference for the second one which is moved along the optical axis,resulting in a frequency shift,proportional to the velocity.The phase difference between both sensors is evaluated for the purpose of interferometric length measurements.
基金supported by the Deutsche Forschungsgemeinschaft(DFG)in the framework of the Research Training Group Tip-and Laser-based 3D-Nanofabrication in extended macroscopic working areas(GRK 2182)at the Technische Universitat Ilmenau,Germany.
文摘The field of optical lithography is subject to intense research and has gained enormous improvement.However,the effort necessary for creating structures at the size of 20 nm and below is considerable using conventional technologies.This effort and the resulting financial requirements can only be tackled by few global companies and thus a paradigm change for the semiconductor industry is conceivable:custom design and solutions for specific applications will dominate future development(Fritze in:Panning EM,Liddle JA(eds)Novel patterning technologies.International society for optics and photonics.SPIE,Bellingham,2021.https://doi.org/10.1117/12.2593229).For this reason,new aspects arise for future lithography,which is why enormous effort has been directed to the development of alternative fabrication technologies.Yet,the technologies emerging from this process,which are promising for coping with the current resolution and accuracy challenges,are only demonstrated as a proof-of-concept on a lab scale of several square micrometers.Such scale is not adequate for the requirements of modern lithography;therefore,there is the need for new and alternative cross-scale solutions to further advance the possibilities of unconventional nanotechnologies.Similar challenges arise because of the technical progress in various other fields,realizing new and unique functionalities based on nanoscale effects,e.g.,in nanophotonics,quantum computing,energy harvesting,and life sciences.Experimental platforms for basic research in the field of scale-spanning nanomeasuring and nanofabrication are necessary for these tasks,which are available at the Technische Universitiit Ilmenau in the form of nanopositioning and nanomeasuring(NPM)machines.With this equipment,the limits of technical structurability are explored for high-performance tip-based and laser-based processes for enabling real 3D nanofabrication with the highest precision in an adequate working range of several thousand cubic millimeters.
