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颈源性失眠发病机制及中医治疗研究进展 被引量:18
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作者 王婷婷 汤兴华 《世界睡眠医学杂志》 2020年第5期916-919,共4页
随着社会发展日新月异,竞争压力、电子产品等诸多因素影响下,失眠发生率明显上升。失眠不仅对个人健康、生命质量的多方面产生不良影响,并且给国家医疗保健体系带来沉重的经济负担。随着对失眠的深入研究,颈源性失眠逐渐受到学者们的关... 随着社会发展日新月异,竞争压力、电子产品等诸多因素影响下,失眠发生率明显上升。失眠不仅对个人健康、生命质量的多方面产生不良影响,并且给国家医疗保健体系带来沉重的经济负担。随着对失眠的深入研究,颈源性失眠逐渐受到学者们的关注。因其具有双重性,且分科治疗的局面所在,当患者因为失眠求诊,易忽略颈椎病这一基础病因。本文总结近年来中医学对颈源性失眠研究进展,以期了解本病现状及提高临床疗效。 展开更多
关键词 颈源性失眠 病因病机 中医治疗
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Pollen-embryogenesis and chromosomal variability in anther culture of Brassica hirta Moench (Sinapis alba L)
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作者 BAJAJYPS DMOHAPTRA 《Cell Research》 SCIE CAS CSCD 1990年第2期191-196,共6页
The anther cultures of Brassica hirta underwent pollenembryogenesis and callusing,which showed a wide range of chromosome numbers varying from 9 (n=12) to a highly polyploid.For embryogenesis,pretreatment of floral bu... The anther cultures of Brassica hirta underwent pollenembryogenesis and callusing,which showed a wide range of chromosome numbers varying from 9 (n=12) to a highly polyploid.For embryogenesis,pretreatment of floral buds in 0.4 M sucrose solution for 72 hrs at 4℃ was superior to freshly cultured anthers.Culture temperature of 30℃ for 14 days before maintenance of cultures at 25℃ was significantly beneficial for embryo yield in comparison to cultures continuously incubated at 25℃.Dark treatment during culture was more effective for pollen-embryo yield. 展开更多
关键词 Pollen-embryogenesis anther culture Brassia hirta chromosomal variabiliiy.
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Recent advances of 2D materials in semiconductor application: A review
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作者 Md.Aminul Islam Safiullah Khan +4 位作者 Juhi Jannat Mim S M Maksudur Rahman Md.Ahadul Islam Patwary Md.Safiul Islam Nayem Hossain 《Advanced Sensor and Energy Materials》 2025年第4期47-65,共19页
Semiconductors have performed remarkably since the advent of two-dimensional(2D)materials with excellent electrical,optical,and thermal characteristics.This review summarizes the recent progress made in the 2D materia... Semiconductors have performed remarkably since the advent of two-dimensional(2D)materials with excellent electrical,optical,and thermal characteristics.This review summarizes the recent progress made in the 2D materials field,i.e.,graphene,transition metal dichalcogenides(TMDCs),and black phosphorus,focusing on their distinct thickness-dependent band structures,charge carrier mobilities,and mechanical properties.This has become a short but powerful interface for mobile devices with fast variations in our speaking circuits,and the power reaches from transistors,photodetectors,and solar cells together with digital electronics,radio-frequency devices,optoelectronics,and sensing technologies.This paper seeks to provide a clear perspective on fabrication,stability,and scale-up challenges by discussing theoretical and experimental approaches and highlighting challenges and innovative methods,including ultrasound-assisted strategies and heterostructure engineering.The present article performed and analysed a systematic literature review on key publications on the fundamental mechanisms and emerging applications of 2D materials in semiconductor technology.The review highlights the role these materials play in improving device performance,energy efficiency,and environmental friendliness.The paper concludes with a perspective on future directions,highlighting new research opportunities through advanced doping techniques and defect engineering to address current limitations and propel the broader adoption of 2D materials.This work sets another milestone for next-generation semiconductors.Another unique aspect of the study is its ability to bridge the gap between the fundamental characteristics of 2D semiconductors and real device-level integration.It draws attention to scalability,stability,and complementary metal oxide semiconductors(CMOS)compatibility difficulties that were not adequately considered in previous studies.The study discusses sophisticated tactics,including interface optimization and heterostructure engineering.A comparative analysis of 2D materials and their possible real-world semiconductor applications is also included in this chapter. 展开更多
关键词 2D materials Semiconductor technology PHOTODETECTORS OPTOELECTRONICS
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