Semi-solid ingots of an A1SiTMg alloy were obtained using the method of near liquidus casting. Their microstructures exhibit the characteristics of free, equiaxed, and non-dendrite, which are required for semi-solid f...Semi-solid ingots of an A1SiTMg alloy were obtained using the method of near liquidus casting. Their microstructures exhibit the characteristics of free, equiaxed, and non-dendrite, which are required for semi-solid forming. The influences of casting temperature, heat preservation time, and cooling rate on the microstructure were also investigated. The results show that in the temperature region near liquidus the grain size becomes small with a decrease in casting temperature. Prolonging the heat preservation time makes grain crassitude at the same temperature. And increasing the cooling rate makes grain fine. The microstructure of the alloy cast with iron mould is freer than that with graphite mould.展开更多
Microstructures of GaN buffer layers grown on Si(111)substrates using rapid thermal process low-pressure metalorganic chemical vapor deposition are investigated by an atomic force microscope(AFM)and a high-resolution ...Microstructures of GaN buffer layers grown on Si(111)substrates using rapid thermal process low-pressure metalorganic chemical vapor deposition are investigated by an atomic force microscope(AFM)and a high-resolution transmission electron microscope(HBTEM).AFM images show that the islands appear in the GaN buffer layer after annealing at high temperature.Cross-sectional HBTEM micrographs of the buffer region of these samples indicate that there are bunched steps on the surface of the Si substrate and a lot of domains in GaN misorienting each other with small angles.The boundaries of those domains locate near the bunched steps,and the regions of the Him on a terrace between steps have the same crystal orientation.An amorphous-like layer,about 3nm thick,can also be observed between the GaN buffer layer and the Si substrate.展开更多
The compressive yielding phenomenon of titanium alloys is not as focused and sufficiently ascertain as the tensile yielding phenomenon.In the present work,the peculiar compressive yielding behavior and the different d...The compressive yielding phenomenon of titanium alloys is not as focused and sufficiently ascertain as the tensile yielding phenomenon.In the present work,the peculiar compressive yielding behavior and the different dynamic responses of three different initial microstructures(singleβ,clavateβand lamellarβ)were investigated in an attractive metastableβtitanium alloy Ti-5553 using electron microscopes/crystallographic calculation/crystal plastic finite element simulation.Results reveal that the distinct compressive yielding behavior,steep peaks of sudden drop in the initial stage(very small true strain 0.03)of stress loading have appeared in the compression stress-strain curves except for the lamellarβinitial microstructure.Dislocation slip is the essential mechanism of the initial yielding behavior.Interlaced multiple-slip bands formed in the singleβinitial microstructure during the warm deformation process.A small quantity of single slip bands was observed in the deformed clavateβinitial microstructure.The abundant varied nano/ultrafineβsprecipitates were nucleated dynamically and dispersedly in all the three deformed initial microstructures.The multiple-slip bands formation and substantial nanoscaleβsresult in the highest peak of flow stress for singleβinitial microstructure.The compressive slip bands are formed early in the elastic–plastic deformation stage.As the increasing strain,the sample showed a significant compressive bulge,or eventually forming a strong adiabatic shear band or crack.These results are expected to provide a reference for the study of deformation behavior and mechanical properties of metastableβtitanium alloys.展开更多
The discovery of ferroelectricity in HfO_(2) based materials reactivated the research on ferroelectric memory.However,the complete mechanism underlying its ferroelectricity remains to be fully elucidated.In this study...The discovery of ferroelectricity in HfO_(2) based materials reactivated the research on ferroelectric memory.However,the complete mechanism underlying its ferroelectricity remains to be fully elucidated.In this study,we conducted a systematic study on the microstructures and ferroelectric properties of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films with various annealing rates in the rapid thermal annealing.It was observed that the HZO thin films with higher annealing rates demonstrate smaller grain size,reduced surface roughness and a higher portion of orthorhombic phase.Moreover,these films exhibited enhanced polarization values and better fatigue cycles compared to those treated with lower annealing rates.The grazing incidence x-ray diffraction measurements revealed the existence of tension stress in the HZO thin films,which was weakened with decreasing annealing rate.Our findings revealed that this internal stress,along with the stress originating from the top/bottom electrode,plays a crucial role in modulating the microstructure and ferroelectric properties of the HZO thin films.By carefully controlling the annealing rate,we could effectively regulate the tension stress within HZO thin films,thus achieving precise control over their ferroelectric properties.This work established a valuable pathway for tailoring the performance of HZO thin films for various applications.展开更多
A new type of Si3N4 ceramics (ZAN) is developed in our laboratory. Densification of ZAN is promoted by non-toxic, non-oxide AZ-type additives. In this work high temperature (HT) properties and microstructures of ZAN a...A new type of Si3N4 ceramics (ZAN) is developed in our laboratory. Densification of ZAN is promoted by non-toxic, non-oxide AZ-type additives. In this work high temperature (HT) properties and microstructures of ZAN are investigated.展开更多
Micromachining based on femtosecond lasers usually requires accurate control of the sample movement,which may be very complex and costly.Therefore,the exploration of micromachining without sample movement is valuable....Micromachining based on femtosecond lasers usually requires accurate control of the sample movement,which may be very complex and costly.Therefore,the exploration of micromachining without sample movement is valuable.Herein,we have illustrated the manipulation of optical fields by controlling the polarization or phase to vary periodically and then realized certain focal traces by real-time loading of the computer-generated holograms(CGHs) on the spatial light modulator.The focal trace is composed of many discrete focal spots,which are generated experimentally by using the real-time dynamically controlled CGHs.With the designed focal traces,various microstructures such as an ellipse,a Chinese character "Nan",and an irregular quadrilateral grid structure are fabricated in the z-cut LiNbO_(3) wafers,showing good qualities in terms of continuity and homogeneity.Our method proposes a movement free solution for micromachining samples and completely abandons the high precision stage and complex movement control,making microstructure fabrication more flexible,stable,and cheaper.展开更多
High-dimensional(HD)entanglement of photonic orbital angular momentum(OAM)is pivotal for advancing quantum communication and information processing,but its characterization remains significant challenges due to the co...High-dimensional(HD)entanglement of photonic orbital angular momentum(OAM)is pivotal for advancing quantum communication and information processing,but its characterization remains significant challenges due to the complexity of quantum state tomography and experimental limitations such as low photon counts caused by losses.Here,we propose a pre-trained physics-informed neural network(PTPINN)framework that enables efficient and rapid reconstruction of HD-OAM entangled states under low photon counts.Experimental results show that the fidelity of five-dimensional OAM entanglement reaches F=0.958±0.010 even with an exposure time as short as 50 ms.This highlights the capability of PTPINN to achieve high-precision quantum state reconstruction with limited photons,owing to its innovative designs,thus overcoming the reliance on high photon counts typical of traditional methods.Our method provides a practical and scalable solution for high-fidelity characterization of HD-OAM entanglement in environments with low photon numbers and high noise,paving the way for robust long-distance quantum information transmission.展开更多
Interfacial ferroelectricity is a recently established mechanism for generating spontaneous reversible electric polarization,arising from the charge transfer between stacked van der Waals layered atomic crystals.It ha...Interfacial ferroelectricity is a recently established mechanism for generating spontaneous reversible electric polarization,arising from the charge transfer between stacked van der Waals layered atomic crystals.It has been realized in both naturally formed multilayer crystals and moirésuperlattices.Owing to the large number of material choices and combinations,this approach is highly versatile,greatly expanding the scope of ultrathin ferroelectrics.A key advantage of interfacial ferroelectricity is its potential to couple with preexisting properties of the constituent layers,enabling their electrical manipulation through ferroelectric switching and paving the way for advanced device functionalities.This review article summarizes recent experimental progress in interfacial ferroelectricity,with an emphasis on its coupling with a variety of electronic properties.After introducing the underlying mechanism of interfacial ferroelectricity and the range of material systems discovered to date,we highlight selected examples showcasing ferroelectric control of excitonic optical properties,Berry curvature effects,and superconductivity.We also discuss the challenges and opportunities that await further studies in this field.展开更多
Memristors have a synapse-like two-terminal structure and electrical properties,which are widely used in the construc-tion of artificial synapses.However,compared to inorganic materials,organic materials are rarely us...Memristors have a synapse-like two-terminal structure and electrical properties,which are widely used in the construc-tion of artificial synapses.However,compared to inorganic materials,organic materials are rarely used for artificial spiking synapses due to their relatively poor memrisitve performance.Here,for the first time,we present an organic memristor based on an electropolymerized dopamine-based memristive layer.This polydopamine-based memristor demonstrates the improve-ments in key performance,including a low threshold voltage of 0.3 V,a thin thickness of 16 nm,and a high parasitic capaci-tance of about 1μF·mm^(-2).By leveraging these properties in combination with its stable threshold switching behavior,we con-struct a capacitor-free and low-power artificial spiking neuron capable of outputting the oscillation voltage,whose spiking fre-quency increases with the increase of current stimulation analogous to a biological neuron.The experimental results indicate that our artificial spiking neuron holds potential for applications in neuromorphic computing and systems.展开更多
Lowering the synthesis temperature of boron nitride nanotubes(BNNTs)is crucial for their development.The primary reason for adopting a high temperature is to enable the effective activation of highmelting-point solid ...Lowering the synthesis temperature of boron nitride nanotubes(BNNTs)is crucial for their development.The primary reason for adopting a high temperature is to enable the effective activation of highmelting-point solid boron.In this study,we developed a novel approach for efficiently activating boron by introducing alkali metal compounds into the conventional MgO–B system.This approach can be adopted to form various low-melting-point AM–Mg–B–O growth systems.These growth systems have improved catalytic capability and reactivity even under low-temperature conditions,facilitating the synthesis of BNNTs at temperatures as low as 850℃.In addition,molecular dynamics simulations based on density functional theory theoretically demonstrate that the systems maintain a liquid state at low temperatures and interact with N atoms to form BN chains.These findings offer novel insights into the design of boron activation and are expected to facilitate research on the low-temperature synthesis of BNNTs.展开更多
This paper delves into the theoretical mechanisms of the electronic structure and optical properties of aluminum-based semiconductors(AlX,X=N,P,As,Sb)and indium-based semiconductors(InX,X=N,P,As,Sb)as potential materi...This paper delves into the theoretical mechanisms of the electronic structure and optical properties of aluminum-based semiconductors(AlX,X=N,P,As,Sb)and indium-based semiconductors(InX,X=N,P,As,Sb)as potential materials for optical devices.Band structure calculations reveal that,except for InSb,all other compounds are direct bandgap semiconductors,with AlN exhibiting a bandgap of 3.245 eV.The valence band maximum of these eight compounds primarily stems from the p-orbitals of Al/In and X.In contrast,the conduction band minimum is influenced by all orbitals,with a predominant contribution from the p-orbitals.The static dielectric constant increased with the expansion of the unit cell volume.Compared to AlX and InX with larger X atoms,AlN and InN showed broader absorption spectra in the near-ultraviolet region and higher photoelectric conductance.Regarding mechanical properties,AlN and InN displayed greater shear and bulk modulus than the other compounds.Moreover,among these eight crystal types,a higher modulus was associated with a lower light loss function value,indicating that AlN and InN have superior transmission efficiency and a wider spectral range in optoelectronic material applications.展开更多
Three-dimensional(3D)graphene monoliths are a new carbon material,that has tremendous potential in the fields of energy conversion and storage.They can solve the limitations of two-dimensional(2D)graphene sheets,inclu...Three-dimensional(3D)graphene monoliths are a new carbon material,that has tremendous potential in the fields of energy conversion and storage.They can solve the limitations of two-dimensional(2D)graphene sheets,including interlayer restacking,high contact resistance,and insufficient pore accessibility.By constructing interconnected porous networks,3D graphenes not only retain the intrinsic advantages of 2D graphene sheets,such as high specific surface area,excellent electrical and thermal conductivities,good mechanical properties,and outstanding chemical stability,but also enable efficient mass transport of external fluid species.We summarize the fabrication methods for 3D graphenes,with a particular focus on their applications in energy-related systems.Techniques including chemical reduction assembly,chemical vapor deposition,3D printing,chemical blowing,and zinc-tiered pyrolysis have been developed to change their pore structure and elemental composition,and ways in which they can be integrated with functional components.In terms of energy conversion and storage,they have found broad use in buffering mechanical impacts,suppressing noise,photothermal conversion,electromagnetic shielding and absorption.They have also been used in electrochemical energy systems such as supercapacitors,secondary batteries,and electrocatalysis.By reviewing recent progress in structural design and new applications,we also discuss the problems these materials face,including scalable fabrication and precise pore structure control,and possible new applications.展开更多
Introduction Frequency-dependent dielectric response is one of the important properties of ferroelectrics,reflecting the polarization response to high-frequency electric fields.Polarizations are closely related to fer...Introduction Frequency-dependent dielectric response is one of the important properties of ferroelectrics,reflecting the polarization response to high-frequency electric fields.Polarizations are closely related to ferroelectric domain structures,such as single domain,which represents the region with homogeneous polarizations direction.Ferroelectrics usually possess complex domain structures with domain walls(DWs)separating adjacent homogeneously polarized domains.DWs have attracted much attention during the past two decades due to their properties and potential for device designing.The related issues include DW motion,nonvolatile memory,topological defects,enhanced susceptibility,enhanced quality factor,low dielectric loss,and others.(Ba0.8,Sr0.2)TiO3(BST0.8)is a ferroelectric usually with multi-domain structures.Previous work identified two typical types of domain walls(DWs),i.e.,90°DWs and 180°DWs.The enhancement of dielectric response in systems with 90°DWs is now well understood,and the behavior of dielectric response in multi-domain systems with 180°DWs remains unclear.Therefore,gaining insights into how 180°DWs affect the dielectric response can clarify the effects in multidomain systems.Methods We performed molecular dynamics simulations using the ALFE-H code with the first-principles-based effective Hamiltonian method to study the BST0.8 system.All the calculations were performed in the NPT ensemble using the Evans-Hoover thermostat,and periodic boundary condition(PBC)along all three directions.To simulate the substrate,a uniform biaxial strain was fixed to the 1.55%in-plane strain.To analyze the multi-domain with different DWs,the simulations started with a self-constructed initial multi-domain polarization configuration.Subsequent 50 ps MD simulation was performed under chosen strains for structural relaxation.In the initial configuration,the magnitude of non-zero components of soft mode on each site was set to 0.1Å,atomic occupations(alloying)were randomized,and unless otherwise specified,all other mode variables were set to zero.The trajectory of local mode averaged over the supercell during MD simulations was extracted to calculate the dielectric response.The 8 ns MD simulations were performed to obtain an autocorrelation function for any time t ranging from 0 to 1 ns by one step of 10 fs.The fast Fourier transformation(FFT)was performed to calculate the dielectric response.Then two uncoupled damped harmonic oscillators(DHOs)were used to fit the data of dielectric response.Results and discussion The dielectric response of single domain at 300 K with the different electric fields along[110]from 0 to 2 MV/cm was computed.The computational results can be well fitted with the model of two uncoupled DHOs.The real and imaginary parts of the predicted dielectric response at each chosen electric field both exhibit two peaks.As the electric field increases,the low-frequency mode with 300 GHz at zero field in the system gradually disappears,and a high-frequency mode of larger than 8 THz appears when electric field is larger than 1 MV/cm.The high frequencies modes of 3 THz at zero filed and 8 THz under 1 MV/cm shift towards higher frequencies as the electric field increases.In other words,the present simulations reveal that it is possible to manipulate the frequency of peaks in dielectric response via changing the magnitude of the external electric field.The dielectric responses of multi-domain with 90°DWs and 180°DWs are further analyzed.According to the experimental PFM results,the multi-domain structures are simulated and the dielectric response through MD simulations is calculated.The analysis of the dielectric response of single domain structure and multi-domain structures shows that the single domain structures exhibit high-frequency peaks at>300 GHz,whereas the multi-domain structures exhibit low-frequency peaks at 8 GHz and 120 GHz for 180°DWs system and at 10 GHz for 90°DWs system,revealing that there exists a low-frequency mode related to collective oscillation of DWs in multi-domain structures.In addition,the frequencies of peaks in multi-domain with DWs are in a gigahertz range,whereas the single domain structure exhibits peaks in a terahertz range.The contribution of DWs to the dielectric response primarily arises from the timescale of DWs motion,such as sliding or breathing,which differs significantly from the high-frequency vibrations of optical phonon modes.The vibrational frequency of DWs is much lower,with relaxation times in the order of nanoseconds,resulting in a response frequency in GHz range,which is far below the terahertz range of optical phonon modes.Therefore,DWs oscillations dominate the dielectric response at a low frequency.Moreover,multi-domain structure with 180°DWs exhibits a unique low frequency mode at 120 GHz,which is significantly different from single domain and 90°DWs system.In other words,multi-domain structures with 180°DWs and 90°DWs exhibit different dielectric responses.There exists a common low-frequency mode related to the oscillations of DWs in BST0.8.Conclusions It was possible to manipulate the frequency of peaks in dielectric response of single domain through changing the magnitude of the external electric field.Domain walls oscillations dominated the dielectric response in a low frequency gigahertz range,whereas the single domain structures exhibited resonant peaks in a terahertz range.Moreover,multi-domain structures with different domain walls in BST0.8 had different dielectric responses,but the both have a same low-frequency mode at 10 GHz related to the domain walls oscillations.The results of this study indicated the dielectric response behaviors of ferroelectrics induced in an external electric field and internal multi-domain configurations and provided the potential mechanisms and guidance for optimizing application performance.展开更多
The generation of optical vortices from nonlinear photonic crystals(NPCs)with spatially modulated second-order nonlinearity offers a promising approach to extend the working wavelength and topological charge of vortex...The generation of optical vortices from nonlinear photonic crystals(NPCs)with spatially modulated second-order nonlinearity offers a promising approach to extend the working wavelength and topological charge of vortex beams for various applications.In this work,the second harmonic(SH)optical vortex beams generated from nonlinear fork gratings under Gaussian beam illumination are numerically investigated.The far-field intensity and phase distributions,as well as the orbital angular momentum(OAM)spectra of the SH beams,are analyzed for different structural topological charges and diffraction orders.Results reveal that higher-order diffraction and larger structural topological charges lead to angular interference patterns and non-uniform intensity distributions,deviating from the standard vortex profile.To optimize the SH vortex quality,the effects of the fundamental wave beam waist,crystal thickness,and grating duty cycle are explored.It is shown that increasing the beam waist can effectively suppress diffraction order interference and improve the beam’s quality.This study provides theoretical guidance for enhancing the performance of nonlinear optical devices based on NPCs.展开更多
In this work,a heterogeneous structure(HS)with an alternating distribution of coarse and fineαlamella is fabricated in bimodal Ti6242 alloy via insufficient diffusion of alloying elements induced by fast heat-ing tre...In this work,a heterogeneous structure(HS)with an alternating distribution of coarse and fineαlamella is fabricated in bimodal Ti6242 alloy via insufficient diffusion of alloying elements induced by fast heat-ing treatment.Instead of a distinct interface between the primaryα_(p)hase(α_(p))andβ_(t)ransformation microstructure(β_(t))in the equiaxed microstructure(EM),allα_(p)/β_(t)interfaces are eliminated in the HS,and the largeα_(p)phases are replaced by coarseαlamella.Compared to the EM alloy,the heterostruc-tured alloy exhibits a superior strength-ductility combination.The enhanced strength is predominantly attributed to the increased interfaces ofα/βplates and hetero-deformation induced(HDI)strengthening caused by back stress.Meanwhile,good ductility is ascribed to its uniform distribution of coarse and fineαlamella,which effectively inhibits strain localization and generates an extra HDI hardening.This can be evidenced by the accumulated geometrically necessary dislocations(GNDs)induced by strain partitioning of the heterostructure.Significantly,the HDI causes extra<c+a>dislocations piling up in the coarseαlamella,which generates an extra strain hardening to further improve the ductility.Such hetero-interface coordinated deformation mechanism sheds light on a new perspective for tailoring bimodal titanium al-loys with excellent mechanical properties.展开更多
Vanadium pentoxide(V_(2)O_(5))displays the characteristics of high theoretical specific capacity,high operating voltage,and adjustable layered structure,possessing the considerable potential as cathode in magnesium me...Vanadium pentoxide(V_(2)O_(5))displays the characteristics of high theoretical specific capacity,high operating voltage,and adjustable layered structure,possessing the considerable potential as cathode in magnesium metal batteries(MMBs).Nevertheless,the large charge-radius ratio of Mg^(2+)induces the strong interactions of Mg^(2+)with solvent molecules of electrolyte and anionic framework of cathode,resulting in a notable voltage polarization and structural deterioration during cycling process.Herein,an in-situ multi-scale structural engineering is proposed to activate the interlayer-expanded V_(2)O_(5)cathode(pillared by tetrabutylammonium cation)via adding hexadecyltrimethylammonium bromide(CTAB)additive into electrolyte.During cycling,the in-situ incorporation of CTA^(+)not only enhances the electrostatic shielding effect and Mg species migration,but also stabilizes the interlayer spacing.Besides,CTA^(+)is prone to be adsorbed on cathode surface and induces the loss-free pulverization and amorphization of electroactive grains,leading to the pronounced effect of intercalation pseudocapacitance.CTAB additive also enables to scissor the Mg^(2+)solvation sheath and tailor the insertion mode of Mg species,further endowing V_(2)O_(5)cathode with fast reaction kinetics.Based on these merits,the corresponding V2O5‖Mg full cells exhibit the remarkable rate performance with capacities as high as 317.6,274.4,201.1,and 132.7 mAh g^(-1)at the high current densities of 0.1,0.2,0.5,and 1 A g^(-1),respectively.Moreover,after 1000 cycles,the capacity is still preserved to be 90,4 mAh g^(-1)at 1 A g^(-1)with an average coulombic efficiency of~100%.Our strategy of synergetic modulations of cathode host and electrolyte solvation structures provides new guidance for the development of high-rate,large-capacity,and long-life MMBs.展开更多
Memristive crossbar arrays(MCAs)offer parallel data storage and processing for energy-efficient neuromorphic computing.However,most wafer-scale MCAs that are compatible with complementary metal-oxide-semiconductor(CMO...Memristive crossbar arrays(MCAs)offer parallel data storage and processing for energy-efficient neuromorphic computing.However,most wafer-scale MCAs that are compatible with complementary metal-oxide-semiconductor(CMOS)technology still suffer from substantially larger energy consumption than biological synapses,due to the slow kinetics of forming conductive paths inside the memristive units.Here we report wafer-scale Ag_(2)S-based MCAs realized using CMOS-compatible processes at temperatures below 160℃.Ag_(2)S electrolytes supply highly mobile Ag+ions,and provide the Ag/Ag_(2)S interface with low silver nucleation barrier to form silver filaments at low energy costs.By further enhancing Ag+migration in Ag_(2)S electrolytes via microstructure modulation,the integrated memristors exhibit a record low threshold of approximately−0.1 V,and demonstrate ultra-low switching-energies reaching femtojoule values as observed in biological synapses.The low-temperature process also enables MCA integration on polyimide substrates for applications in flexible electronics.Moreover,the intrinsic nonidealities of the memristive units for deep learning can be compensated by employing an advanced training algorithm.An impressive accuracy of 92.6%in image recognition simulations is demonstrated with the MCAs after the compensation.The demonstrated MCAs provide a promising device option for neuromorphic computing with ultra-high energy-efficiency.展开更多
Silicon-carbide-fiber-reinforced silicon-carbide-ceramic-based matrix(SiC/SiC)composites possess excellent properties such as low density,high strength and high temperature resistance,showing a potential application f...Silicon-carbide-fiber-reinforced silicon-carbide-ceramic-based matrix(SiC/SiC)composites possess excellent properties such as low density,high strength and high temperature resistance,showing a potential application for structural components in the aerospace field,but their oxidation behavior remains largely unknown.In this study,Yb_(2)Si_(2)O_(7)modified SiC/SiC(SiC/SiC-Yb_(2)Si_(2)O_(7))mini-composites were prepared by introducing Yb_(2)Si_(2)O_(7)as anti-oxidation phase into SiC fiber bundles via Sol-Gel and depositing SiC matrix by chemical vapor deposition(CVD).Influence of Yb_(2)Si_(2)O_(7)on microstructure,mechanical property and oxidation behavior of SiC/SiC mini-composites was investigated.The results showed that after oxidation in air at 1200 and 1400℃for 50 h,the tensile strength retentions of SiC/SiC mini-composites were 77%and 69%,respectively,and the fracture morphology exhibited flat.The Yb_(2)Si_(2)O_(7)introduced by Sol-Gel partially distributed in layers,contributing to the toughening of the material.On the fracture surface,there was interlayer debonding,which extended energy dissipation mechanism of SiC/SiC mini-composites.Tensile strength of SiC/SiC-Yb_(2)Si_(2)O_(7)mini-composites at room temperature was 484 MPa.After oxidation in air at 1200 and 1400℃for 50 h,the tensile strengths decreased to 425 and 374 MPa,resulting in retention rates of 88%and 77%,respectively.It displayed typical non-brittle fracture characteristics.The interface oxygen content of SiC/SiC mini-composites at the fracture surface was higher than that of SiC/SiC-Yb_(2)Si_(2)O_(7)mini-composites,indicating that introduction of Yb_(2)Si_(2)O_(7)could alleviate oxygen diffusion towards the interface,and therefore improve the oxidation resistance of SiC/SiC-Yb_(2)Si_(2)O_(7)mini-composites.展开更多
Higher-order topological insulators,which host topologically protected states at boundaries that are at least two dimensions lower than the bulk,are an emerging class of topological materials.They provide great opport...Higher-order topological insulators,which host topologically protected states at boundaries that are at least two dimensions lower than the bulk,are an emerging class of topological materials.They provide great opportunities for exploring novel topological phenomena and fascinating applications.Utilizing a low-temperature scanning tunneling microscope,we construct breathing-kagome lattices with Fe adatoms on Ag(111)and investigate their electronic properties.We observe the higher-order topological boundary states in the topological phase but not in the trivial one,which is consistent with the theory.These states are found to be robust against the removal of bulk or edge adatoms.Further,we show the arbitrary positioning of these states either at corner,edge,or bulk sites by slightly modifying their neighbors.Our study not only demonstrates the formation and robustness of the electronic higher-order topological boundary states in real atomic systems but also provides a route for controlling their positions.展开更多
基金the National Natural Science Foundation of China (No. 50374031)the Aviation Science Foundation of Liaoning Province (No. 20054003)+1 种基金the Education Committee of Liaoning Province (No. 05L415)the Research Foundation of the Experimental Center of SYNU.]
文摘Semi-solid ingots of an A1SiTMg alloy were obtained using the method of near liquidus casting. Their microstructures exhibit the characteristics of free, equiaxed, and non-dendrite, which are required for semi-solid forming. The influences of casting temperature, heat preservation time, and cooling rate on the microstructure were also investigated. The results show that in the temperature region near liquidus the grain size becomes small with a decrease in casting temperature. Prolonging the heat preservation time makes grain crassitude at the same temperature. And increasing the cooling rate makes grain fine. The microstructure of the alloy cast with iron mould is freer than that with graphite mould.
基金Supported by Project of High Technology Research&Development of China(863-715-011-0030),Project of Fundamental Research of China,the National Natural Science Foundation of China under Grant Nos.69636010 and 69636040,and MOTOROLA(China Inc.)Semiconductor Scholarship.
文摘Microstructures of GaN buffer layers grown on Si(111)substrates using rapid thermal process low-pressure metalorganic chemical vapor deposition are investigated by an atomic force microscope(AFM)and a high-resolution transmission electron microscope(HBTEM).AFM images show that the islands appear in the GaN buffer layer after annealing at high temperature.Cross-sectional HBTEM micrographs of the buffer region of these samples indicate that there are bunched steps on the surface of the Si substrate and a lot of domains in GaN misorienting each other with small angles.The boundaries of those domains locate near the bunched steps,and the regions of the Him on a terrace between steps have the same crystal orientation.An amorphous-like layer,about 3nm thick,can also be observed between the GaN buffer layer and the Si substrate.
基金supported by National Natural Science Foundation of China(51801156)Major State Research Development Program of China(2016YFB0701305)+1 种基金Natural Science Basic Research Plan in Shaanxi Province of China(2018JQ5035)the Fundamental Research Funds for the Central Universities(G2017KY0310).
文摘The compressive yielding phenomenon of titanium alloys is not as focused and sufficiently ascertain as the tensile yielding phenomenon.In the present work,the peculiar compressive yielding behavior and the different dynamic responses of three different initial microstructures(singleβ,clavateβand lamellarβ)were investigated in an attractive metastableβtitanium alloy Ti-5553 using electron microscopes/crystallographic calculation/crystal plastic finite element simulation.Results reveal that the distinct compressive yielding behavior,steep peaks of sudden drop in the initial stage(very small true strain 0.03)of stress loading have appeared in the compression stress-strain curves except for the lamellarβinitial microstructure.Dislocation slip is the essential mechanism of the initial yielding behavior.Interlaced multiple-slip bands formed in the singleβinitial microstructure during the warm deformation process.A small quantity of single slip bands was observed in the deformed clavateβinitial microstructure.The abundant varied nano/ultrafineβsprecipitates were nucleated dynamically and dispersedly in all the three deformed initial microstructures.The multiple-slip bands formation and substantial nanoscaleβsresult in the highest peak of flow stress for singleβinitial microstructure.The compressive slip bands are formed early in the elastic–plastic deformation stage.As the increasing strain,the sample showed a significant compressive bulge,or eventually forming a strong adiabatic shear band or crack.These results are expected to provide a reference for the study of deformation behavior and mechanical properties of metastableβtitanium alloys.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.62174059 and 52250281)the Science and Technology Projects of Guangzhou Province of China (Grant No.202201000008)+1 种基金the Guangdong Science and Technology Project-International Cooperation (Grant No.2021A0505030064)the Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials (Grant No.2020B1212060066)。
文摘The discovery of ferroelectricity in HfO_(2) based materials reactivated the research on ferroelectric memory.However,the complete mechanism underlying its ferroelectricity remains to be fully elucidated.In this study,we conducted a systematic study on the microstructures and ferroelectric properties of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films with various annealing rates in the rapid thermal annealing.It was observed that the HZO thin films with higher annealing rates demonstrate smaller grain size,reduced surface roughness and a higher portion of orthorhombic phase.Moreover,these films exhibited enhanced polarization values and better fatigue cycles compared to those treated with lower annealing rates.The grazing incidence x-ray diffraction measurements revealed the existence of tension stress in the HZO thin films,which was weakened with decreasing annealing rate.Our findings revealed that this internal stress,along with the stress originating from the top/bottom electrode,plays a crucial role in modulating the microstructure and ferroelectric properties of the HZO thin films.By carefully controlling the annealing rate,we could effectively regulate the tension stress within HZO thin films,thus achieving precise control over their ferroelectric properties.This work established a valuable pathway for tailoring the performance of HZO thin films for various applications.
文摘A new type of Si3N4 ceramics (ZAN) is developed in our laboratory. Densification of ZAN is promoted by non-toxic, non-oxide AZ-type additives. In this work high temperature (HT) properties and microstructures of ZAN are investigated.
基金supported by the National Key R&D Program of China (Nos. 2017YFA0303800 and 2017YFA0303700)National Natural Science Foundation of China (Nos. 11534006, 11774183, 12074196, and 11904152)
文摘Micromachining based on femtosecond lasers usually requires accurate control of the sample movement,which may be very complex and costly.Therefore,the exploration of micromachining without sample movement is valuable.Herein,we have illustrated the manipulation of optical fields by controlling the polarization or phase to vary periodically and then realized certain focal traces by real-time loading of the computer-generated holograms(CGHs) on the spatial light modulator.The focal trace is composed of many discrete focal spots,which are generated experimentally by using the real-time dynamically controlled CGHs.With the designed focal traces,various microstructures such as an ellipse,a Chinese character "Nan",and an irregular quadrilateral grid structure are fabricated in the z-cut LiNbO_(3) wafers,showing good qualities in terms of continuity and homogeneity.Our method proposes a movement free solution for micromachining samples and completely abandons the high precision stage and complex movement control,making microstructure fabrication more flexible,stable,and cheaper.
基金supported by the National Natural Science Foundation of China(12234009,12474328,12074196,11922406,and 12074197)。
文摘High-dimensional(HD)entanglement of photonic orbital angular momentum(OAM)is pivotal for advancing quantum communication and information processing,but its characterization remains significant challenges due to the complexity of quantum state tomography and experimental limitations such as low photon counts caused by losses.Here,we propose a pre-trained physics-informed neural network(PTPINN)framework that enables efficient and rapid reconstruction of HD-OAM entangled states under low photon counts.Experimental results show that the fidelity of five-dimensional OAM entanglement reaches F=0.958±0.010 even with an exposure time as short as 50 ms.This highlights the capability of PTPINN to achieve high-precision quantum state reconstruction with limited photons,owing to its innovative designs,thus overcoming the reliance on high photon counts typical of traditional methods.Our method provides a practical and scalable solution for high-fidelity characterization of HD-OAM entanglement in environments with low photon numbers and high noise,paving the way for robust long-distance quantum information transmission.
基金Project supported by the Natural Science Foundation of Jiangsu Province(Grant Nos.BK20231529 and BK20233001)the National Key Research and Development Program of China(Grant No.2024YFA1409100)+2 种基金the Fundamental Research Funds for the Central Universities(Grant No.0204-14380233)the National Natural Science Foundation of China(Grant Nos.12474170 and 123B2059)the National Postdoctoral Program for Innovative Talents(Grant No.BX20240160)。
文摘Interfacial ferroelectricity is a recently established mechanism for generating spontaneous reversible electric polarization,arising from the charge transfer between stacked van der Waals layered atomic crystals.It has been realized in both naturally formed multilayer crystals and moirésuperlattices.Owing to the large number of material choices and combinations,this approach is highly versatile,greatly expanding the scope of ultrathin ferroelectrics.A key advantage of interfacial ferroelectricity is its potential to couple with preexisting properties of the constituent layers,enabling their electrical manipulation through ferroelectric switching and paving the way for advanced device functionalities.This review article summarizes recent experimental progress in interfacial ferroelectricity,with an emphasis on its coupling with a variety of electronic properties.After introducing the underlying mechanism of interfacial ferroelectricity and the range of material systems discovered to date,we highlight selected examples showcasing ferroelectric control of excitonic optical properties,Berry curvature effects,and superconductivity.We also discuss the challenges and opportunities that await further studies in this field.
基金support from the Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund(No.L233009)National Natural Science Foundation of China(NSFC Nos.62422409,62174152,and 62374159)from the Youth Innovation Promotion Association of Chinese Academy of Sciences(No.2020115).
文摘Memristors have a synapse-like two-terminal structure and electrical properties,which are widely used in the construc-tion of artificial synapses.However,compared to inorganic materials,organic materials are rarely used for artificial spiking synapses due to their relatively poor memrisitve performance.Here,for the first time,we present an organic memristor based on an electropolymerized dopamine-based memristive layer.This polydopamine-based memristor demonstrates the improve-ments in key performance,including a low threshold voltage of 0.3 V,a thin thickness of 16 nm,and a high parasitic capaci-tance of about 1μF·mm^(-2).By leveraging these properties in combination with its stable threshold switching behavior,we con-struct a capacitor-free and low-power artificial spiking neuron capable of outputting the oscillation voltage,whose spiking fre-quency increases with the increase of current stimulation analogous to a biological neuron.The experimental results indicate that our artificial spiking neuron holds potential for applications in neuromorphic computing and systems.
基金supported by the National Natural Science Foundation of China(No.51972162)the Fundamental Research Funds for the Central Universities(No.2024300440).
文摘Lowering the synthesis temperature of boron nitride nanotubes(BNNTs)is crucial for their development.The primary reason for adopting a high temperature is to enable the effective activation of highmelting-point solid boron.In this study,we developed a novel approach for efficiently activating boron by introducing alkali metal compounds into the conventional MgO–B system.This approach can be adopted to form various low-melting-point AM–Mg–B–O growth systems.These growth systems have improved catalytic capability and reactivity even under low-temperature conditions,facilitating the synthesis of BNNTs at temperatures as low as 850℃.In addition,molecular dynamics simulations based on density functional theory theoretically demonstrate that the systems maintain a liquid state at low temperatures and interact with N atoms to form BN chains.These findings offer novel insights into the design of boron activation and are expected to facilitate research on the low-temperature synthesis of BNNTs.
文摘This paper delves into the theoretical mechanisms of the electronic structure and optical properties of aluminum-based semiconductors(AlX,X=N,P,As,Sb)and indium-based semiconductors(InX,X=N,P,As,Sb)as potential materials for optical devices.Band structure calculations reveal that,except for InSb,all other compounds are direct bandgap semiconductors,with AlN exhibiting a bandgap of 3.245 eV.The valence band maximum of these eight compounds primarily stems from the p-orbitals of Al/In and X.In contrast,the conduction band minimum is influenced by all orbitals,with a predominant contribution from the p-orbitals.The static dielectric constant increased with the expansion of the unit cell volume.Compared to AlX and InX with larger X atoms,AlN and InN showed broader absorption spectra in the near-ultraviolet region and higher photoelectric conductance.Regarding mechanical properties,AlN and InN displayed greater shear and bulk modulus than the other compounds.Moreover,among these eight crystal types,a higher modulus was associated with a lower light loss function value,indicating that AlN and InN have superior transmission efficiency and a wider spectral range in optoelectronic material applications.
基金supported by National Natural Science Foundation of China(52272039,U23B2075,51972168)Key Research and Development Program in Jiangsu Province(BE2023085)Natural Science Foundation of Jiangsu Province of China(BK20231406)。
文摘Three-dimensional(3D)graphene monoliths are a new carbon material,that has tremendous potential in the fields of energy conversion and storage.They can solve the limitations of two-dimensional(2D)graphene sheets,including interlayer restacking,high contact resistance,and insufficient pore accessibility.By constructing interconnected porous networks,3D graphenes not only retain the intrinsic advantages of 2D graphene sheets,such as high specific surface area,excellent electrical and thermal conductivities,good mechanical properties,and outstanding chemical stability,but also enable efficient mass transport of external fluid species.We summarize the fabrication methods for 3D graphenes,with a particular focus on their applications in energy-related systems.Techniques including chemical reduction assembly,chemical vapor deposition,3D printing,chemical blowing,and zinc-tiered pyrolysis have been developed to change their pore structure and elemental composition,and ways in which they can be integrated with functional components.In terms of energy conversion and storage,they have found broad use in buffering mechanical impacts,suppressing noise,photothermal conversion,electromagnetic shielding and absorption.They have also been used in electrochemical energy systems such as supercapacitors,secondary batteries,and electrocatalysis.By reviewing recent progress in structural design and new applications,we also discuss the problems these materials face,including scalable fabrication and precise pore structure control,and possible new applications.
文摘Introduction Frequency-dependent dielectric response is one of the important properties of ferroelectrics,reflecting the polarization response to high-frequency electric fields.Polarizations are closely related to ferroelectric domain structures,such as single domain,which represents the region with homogeneous polarizations direction.Ferroelectrics usually possess complex domain structures with domain walls(DWs)separating adjacent homogeneously polarized domains.DWs have attracted much attention during the past two decades due to their properties and potential for device designing.The related issues include DW motion,nonvolatile memory,topological defects,enhanced susceptibility,enhanced quality factor,low dielectric loss,and others.(Ba0.8,Sr0.2)TiO3(BST0.8)is a ferroelectric usually with multi-domain structures.Previous work identified two typical types of domain walls(DWs),i.e.,90°DWs and 180°DWs.The enhancement of dielectric response in systems with 90°DWs is now well understood,and the behavior of dielectric response in multi-domain systems with 180°DWs remains unclear.Therefore,gaining insights into how 180°DWs affect the dielectric response can clarify the effects in multidomain systems.Methods We performed molecular dynamics simulations using the ALFE-H code with the first-principles-based effective Hamiltonian method to study the BST0.8 system.All the calculations were performed in the NPT ensemble using the Evans-Hoover thermostat,and periodic boundary condition(PBC)along all three directions.To simulate the substrate,a uniform biaxial strain was fixed to the 1.55%in-plane strain.To analyze the multi-domain with different DWs,the simulations started with a self-constructed initial multi-domain polarization configuration.Subsequent 50 ps MD simulation was performed under chosen strains for structural relaxation.In the initial configuration,the magnitude of non-zero components of soft mode on each site was set to 0.1Å,atomic occupations(alloying)were randomized,and unless otherwise specified,all other mode variables were set to zero.The trajectory of local mode averaged over the supercell during MD simulations was extracted to calculate the dielectric response.The 8 ns MD simulations were performed to obtain an autocorrelation function for any time t ranging from 0 to 1 ns by one step of 10 fs.The fast Fourier transformation(FFT)was performed to calculate the dielectric response.Then two uncoupled damped harmonic oscillators(DHOs)were used to fit the data of dielectric response.Results and discussion The dielectric response of single domain at 300 K with the different electric fields along[110]from 0 to 2 MV/cm was computed.The computational results can be well fitted with the model of two uncoupled DHOs.The real and imaginary parts of the predicted dielectric response at each chosen electric field both exhibit two peaks.As the electric field increases,the low-frequency mode with 300 GHz at zero field in the system gradually disappears,and a high-frequency mode of larger than 8 THz appears when electric field is larger than 1 MV/cm.The high frequencies modes of 3 THz at zero filed and 8 THz under 1 MV/cm shift towards higher frequencies as the electric field increases.In other words,the present simulations reveal that it is possible to manipulate the frequency of peaks in dielectric response via changing the magnitude of the external electric field.The dielectric responses of multi-domain with 90°DWs and 180°DWs are further analyzed.According to the experimental PFM results,the multi-domain structures are simulated and the dielectric response through MD simulations is calculated.The analysis of the dielectric response of single domain structure and multi-domain structures shows that the single domain structures exhibit high-frequency peaks at>300 GHz,whereas the multi-domain structures exhibit low-frequency peaks at 8 GHz and 120 GHz for 180°DWs system and at 10 GHz for 90°DWs system,revealing that there exists a low-frequency mode related to collective oscillation of DWs in multi-domain structures.In addition,the frequencies of peaks in multi-domain with DWs are in a gigahertz range,whereas the single domain structure exhibits peaks in a terahertz range.The contribution of DWs to the dielectric response primarily arises from the timescale of DWs motion,such as sliding or breathing,which differs significantly from the high-frequency vibrations of optical phonon modes.The vibrational frequency of DWs is much lower,with relaxation times in the order of nanoseconds,resulting in a response frequency in GHz range,which is far below the terahertz range of optical phonon modes.Therefore,DWs oscillations dominate the dielectric response at a low frequency.Moreover,multi-domain structure with 180°DWs exhibits a unique low frequency mode at 120 GHz,which is significantly different from single domain and 90°DWs system.In other words,multi-domain structures with 180°DWs and 90°DWs exhibit different dielectric responses.There exists a common low-frequency mode related to the oscillations of DWs in BST0.8.Conclusions It was possible to manipulate the frequency of peaks in dielectric response of single domain through changing the magnitude of the external electric field.Domain walls oscillations dominated the dielectric response in a low frequency gigahertz range,whereas the single domain structures exhibited resonant peaks in a terahertz range.Moreover,multi-domain structures with different domain walls in BST0.8 had different dielectric responses,but the both have a same low-frequency mode at 10 GHz related to the domain walls oscillations.The results of this study indicated the dielectric response behaviors of ferroelectrics induced in an external electric field and internal multi-domain configurations and provided the potential mechanisms and guidance for optimizing application performance.
基金supported by the National Nat-ural Science Foundation of China(Nos.12192251,12174185,92163216,and 62288101).
文摘The generation of optical vortices from nonlinear photonic crystals(NPCs)with spatially modulated second-order nonlinearity offers a promising approach to extend the working wavelength and topological charge of vortex beams for various applications.In this work,the second harmonic(SH)optical vortex beams generated from nonlinear fork gratings under Gaussian beam illumination are numerically investigated.The far-field intensity and phase distributions,as well as the orbital angular momentum(OAM)spectra of the SH beams,are analyzed for different structural topological charges and diffraction orders.Results reveal that higher-order diffraction and larger structural topological charges lead to angular interference patterns and non-uniform intensity distributions,deviating from the standard vortex profile.To optimize the SH vortex quality,the effects of the fundamental wave beam waist,crystal thickness,and grating duty cycle are explored.It is shown that increasing the beam waist can effectively suppress diffraction order interference and improve the beam’s quality.This study provides theoretical guidance for enhancing the performance of nonlinear optical devices based on NPCs.
基金financially supported by the National Natural Science Foundation of China(Nos.52161019 and 52271054)the Science and Technology Project of Guizhou Province,China(No.[2023]047)+1 种基金the GuiZhou DIIT Innovation Project(No.[2023]153)the One Hundred Person Project of Guizhou Province,China(No.[2020]6006).
文摘In this work,a heterogeneous structure(HS)with an alternating distribution of coarse and fineαlamella is fabricated in bimodal Ti6242 alloy via insufficient diffusion of alloying elements induced by fast heat-ing treatment.Instead of a distinct interface between the primaryα_(p)hase(α_(p))andβ_(t)ransformation microstructure(β_(t))in the equiaxed microstructure(EM),allα_(p)/β_(t)interfaces are eliminated in the HS,and the largeα_(p)phases are replaced by coarseαlamella.Compared to the EM alloy,the heterostruc-tured alloy exhibits a superior strength-ductility combination.The enhanced strength is predominantly attributed to the increased interfaces ofα/βplates and hetero-deformation induced(HDI)strengthening caused by back stress.Meanwhile,good ductility is ascribed to its uniform distribution of coarse and fineαlamella,which effectively inhibits strain localization and generates an extra HDI hardening.This can be evidenced by the accumulated geometrically necessary dislocations(GNDs)induced by strain partitioning of the heterostructure.Significantly,the HDI causes extra<c+a>dislocations piling up in the coarseαlamella,which generates an extra strain hardening to further improve the ductility.Such hetero-interface coordinated deformation mechanism sheds light on a new perspective for tailoring bimodal titanium al-loys with excellent mechanical properties.
基金supported by the National Natural Science Foundation of China(52372249)support by the Program of Shanghai Academic Research Leader(21XD1424400)。
文摘Vanadium pentoxide(V_(2)O_(5))displays the characteristics of high theoretical specific capacity,high operating voltage,and adjustable layered structure,possessing the considerable potential as cathode in magnesium metal batteries(MMBs).Nevertheless,the large charge-radius ratio of Mg^(2+)induces the strong interactions of Mg^(2+)with solvent molecules of electrolyte and anionic framework of cathode,resulting in a notable voltage polarization and structural deterioration during cycling process.Herein,an in-situ multi-scale structural engineering is proposed to activate the interlayer-expanded V_(2)O_(5)cathode(pillared by tetrabutylammonium cation)via adding hexadecyltrimethylammonium bromide(CTAB)additive into electrolyte.During cycling,the in-situ incorporation of CTA^(+)not only enhances the electrostatic shielding effect and Mg species migration,but also stabilizes the interlayer spacing.Besides,CTA^(+)is prone to be adsorbed on cathode surface and induces the loss-free pulverization and amorphization of electroactive grains,leading to the pronounced effect of intercalation pseudocapacitance.CTAB additive also enables to scissor the Mg^(2+)solvation sheath and tailor the insertion mode of Mg species,further endowing V_(2)O_(5)cathode with fast reaction kinetics.Based on these merits,the corresponding V2O5‖Mg full cells exhibit the remarkable rate performance with capacities as high as 317.6,274.4,201.1,and 132.7 mAh g^(-1)at the high current densities of 0.1,0.2,0.5,and 1 A g^(-1),respectively.Moreover,after 1000 cycles,the capacity is still preserved to be 90,4 mAh g^(-1)at 1 A g^(-1)with an average coulombic efficiency of~100%.Our strategy of synergetic modulations of cathode host and electrolyte solvation structures provides new guidance for the development of high-rate,large-capacity,and long-life MMBs.
基金supported by the Swedish Strategic Research Foundation(SSF FFL15-0174 to Zhen Zhang)the Swedish Research Council(VR 2018-06030 and 2019-04690 to Zhen Zhang)+1 种基金the Wallenberg Academy Fellow Extension Program(KAW 2020-0190 to Zhen Zhang)the Olle Engkvist Foundation(Postdoc grant 214-0322 to Zhen Zhang).
文摘Memristive crossbar arrays(MCAs)offer parallel data storage and processing for energy-efficient neuromorphic computing.However,most wafer-scale MCAs that are compatible with complementary metal-oxide-semiconductor(CMOS)technology still suffer from substantially larger energy consumption than biological synapses,due to the slow kinetics of forming conductive paths inside the memristive units.Here we report wafer-scale Ag_(2)S-based MCAs realized using CMOS-compatible processes at temperatures below 160℃.Ag_(2)S electrolytes supply highly mobile Ag+ions,and provide the Ag/Ag_(2)S interface with low silver nucleation barrier to form silver filaments at low energy costs.By further enhancing Ag+migration in Ag_(2)S electrolytes via microstructure modulation,the integrated memristors exhibit a record low threshold of approximately−0.1 V,and demonstrate ultra-low switching-energies reaching femtojoule values as observed in biological synapses.The low-temperature process also enables MCA integration on polyimide substrates for applications in flexible electronics.Moreover,the intrinsic nonidealities of the memristive units for deep learning can be compensated by employing an advanced training algorithm.An impressive accuracy of 92.6%in image recognition simulations is demonstrated with the MCAs after the compensation.The demonstrated MCAs provide a promising device option for neuromorphic computing with ultra-high energy-efficiency.
基金National Natural Science Foundation of China(52222202)National Key R&D Program of China(2022YFB3707700)+2 种基金Project of Shanghai Science and Technology Innovation Action Plan(21511104800)Shanghai Pilot Program for Basic Research-Chinese Academy of Science,Shanghai Branch(JCYJ-SHFY-2021-001)Science Center for Gas Turbine Project(P2022-B-Ⅳ-001-001)。
文摘Silicon-carbide-fiber-reinforced silicon-carbide-ceramic-based matrix(SiC/SiC)composites possess excellent properties such as low density,high strength and high temperature resistance,showing a potential application for structural components in the aerospace field,but their oxidation behavior remains largely unknown.In this study,Yb_(2)Si_(2)O_(7)modified SiC/SiC(SiC/SiC-Yb_(2)Si_(2)O_(7))mini-composites were prepared by introducing Yb_(2)Si_(2)O_(7)as anti-oxidation phase into SiC fiber bundles via Sol-Gel and depositing SiC matrix by chemical vapor deposition(CVD).Influence of Yb_(2)Si_(2)O_(7)on microstructure,mechanical property and oxidation behavior of SiC/SiC mini-composites was investigated.The results showed that after oxidation in air at 1200 and 1400℃for 50 h,the tensile strength retentions of SiC/SiC mini-composites were 77%and 69%,respectively,and the fracture morphology exhibited flat.The Yb_(2)Si_(2)O_(7)introduced by Sol-Gel partially distributed in layers,contributing to the toughening of the material.On the fracture surface,there was interlayer debonding,which extended energy dissipation mechanism of SiC/SiC mini-composites.Tensile strength of SiC/SiC-Yb_(2)Si_(2)O_(7)mini-composites at room temperature was 484 MPa.After oxidation in air at 1200 and 1400℃for 50 h,the tensile strengths decreased to 425 and 374 MPa,resulting in retention rates of 88%and 77%,respectively.It displayed typical non-brittle fracture characteristics.The interface oxygen content of SiC/SiC mini-composites at the fracture surface was higher than that of SiC/SiC-Yb_(2)Si_(2)O_(7)mini-composites,indicating that introduction of Yb_(2)Si_(2)O_(7)could alleviate oxygen diffusion towards the interface,and therefore improve the oxidation resistance of SiC/SiC-Yb_(2)Si_(2)O_(7)mini-composites.
基金supported by the National Key R&D Program of China(Grant Nos.2024YFA140850,2022YFA1403601,and 2023YFC2410501)the National Natural Science Foundation of China(Grants Nos.12241402,12474059,12274203,12374113,and 12274204)。
文摘Higher-order topological insulators,which host topologically protected states at boundaries that are at least two dimensions lower than the bulk,are an emerging class of topological materials.They provide great opportunities for exploring novel topological phenomena and fascinating applications.Utilizing a low-temperature scanning tunneling microscope,we construct breathing-kagome lattices with Fe adatoms on Ag(111)and investigate their electronic properties.We observe the higher-order topological boundary states in the topological phase but not in the trivial one,which is consistent with the theory.These states are found to be robust against the removal of bulk or edge adatoms.Further,we show the arbitrary positioning of these states either at corner,edge,or bulk sites by slightly modifying their neighbors.Our study not only demonstrates the formation and robustness of the electronic higher-order topological boundary states in real atomic systems but also provides a route for controlling their positions.
