In this study,Kagome superconductors,i.e.,CsV_(3)Sb_(5)single crystals and its Ta-doped variant,Cs(V_(0.86)Ta_(0.14))_(3)Sb_(5),were studied in detail via specific heat measurements.Results revealed that the charge de...In this study,Kagome superconductors,i.e.,CsV_(3)Sb_(5)single crystals and its Ta-doped variant,Cs(V_(0.86)Ta_(0.14))_(3)Sb_(5),were studied in detail via specific heat measurements.Results revealed that the charge density wave(CDW)was suppressed and the superconducting transition temperature(Tc)considerably increased from 2.8 to 4.6K upon Ta doping.The electronic specific heat of CsV_(3)Sb_(5)was fitted with a model comprising an s-wave gap and a highly anisotropic extended s-wave gap,where 2Δ/kBTc was smaller than the weak coupling limit of 3.5.Cs(V_(0.86)Ta_(0.14))_(3)Sb_(5) exhibited two isotropic s-wave gaps and yielded a larger gap of 2Δ/kBTc=5.04,indicating a significant enhancement in superconducting coupling.This evolution was attributed to the increased density of states near the Fermi level released by CDW gap suppression.These findings demonstrated that Ta doping enhanced superconducting coupling and variation of gap structure in CsV_(3)Sb_(5).展开更多
The screw dislocations are intriguing defects that are often observed in natural and artificial materials. The dislocation spirals break the reflection and inversion symmetries of the lattices and modify the interlaye...The screw dislocations are intriguing defects that are often observed in natural and artificial materials. The dislocation spirals break the reflection and inversion symmetries of the lattices and modify the interlayer coupling in layer-structured materials, inducing additional complexity in layer stacking and thus novel properties in materials. Here, we report on the interlayer coupling of two-dimensional (2D) MoSe2 flakes with screw dislocations by atomic force microscopy (AFM), Raman spectra and photoluminescence (PL) spectra. By controlling the supersaturation conditions, 2D MoSe2 flakes with screw dislocations are grown on amorphous SiO2 substrates by chemical vapor deposition (CVD). AFM measurements reveal that the interlayer spacing in such 2D MoSe2 flakes with screw dislocation is slightly widened with respect to the normal AA- or AB-stacked ones due to the presence of the screw dislocations. Raman and PL spectra show that the interlayer coupling is weaker and thus the band gap is wider than that in the normal AA- or AB-stacked ones. Our work demonstrates that the interlayer coupling of 2D transition metal dichalcogenides (TMDCs) flakes can be tuned by the induction of screw dislocations, which is very helpful for developing novel catalysts and electronic devices.展开更多
基金National Key R&D Program of China(Grant Nos.2022YFA1403201,2022YFA1403400,and 2020YFA0308800)National Natural Science Foundation of China(Grant Nos.11927809,12061131001,11974171,92065109,and 12204231)Fundamental Research Funds for the Central Universities(Grant No.020414380208).
文摘In this study,Kagome superconductors,i.e.,CsV_(3)Sb_(5)single crystals and its Ta-doped variant,Cs(V_(0.86)Ta_(0.14))_(3)Sb_(5),were studied in detail via specific heat measurements.Results revealed that the charge density wave(CDW)was suppressed and the superconducting transition temperature(Tc)considerably increased from 2.8 to 4.6K upon Ta doping.The electronic specific heat of CsV_(3)Sb_(5)was fitted with a model comprising an s-wave gap and a highly anisotropic extended s-wave gap,where 2Δ/kBTc was smaller than the weak coupling limit of 3.5.Cs(V_(0.86)Ta_(0.14))_(3)Sb_(5) exhibited two isotropic s-wave gaps and yielded a larger gap of 2Δ/kBTc=5.04,indicating a significant enhancement in superconducting coupling.This evolution was attributed to the increased density of states near the Fermi level released by CDW gap suppression.These findings demonstrated that Ta doping enhanced superconducting coupling and variation of gap structure in CsV_(3)Sb_(5).
基金supported by the National Natural Science Foundation of China (Nos.11574029, 51661135026, 2177300&11704027, 11574361, and 11834017)the National Key R&D Program of China (Nos.2016YFA0300600 and 2016YFA0300904)+2 种基金the Strategic Priority Research Program of Chinese Academy of Sciences (Nos.XDB30000000)the Key Research Program of Frontier Sciences (No.QYZDB-SSW-SLH004)the Youth Innovation Promotion Association CAS (No.2018013).
文摘The screw dislocations are intriguing defects that are often observed in natural and artificial materials. The dislocation spirals break the reflection and inversion symmetries of the lattices and modify the interlayer coupling in layer-structured materials, inducing additional complexity in layer stacking and thus novel properties in materials. Here, we report on the interlayer coupling of two-dimensional (2D) MoSe2 flakes with screw dislocations by atomic force microscopy (AFM), Raman spectra and photoluminescence (PL) spectra. By controlling the supersaturation conditions, 2D MoSe2 flakes with screw dislocations are grown on amorphous SiO2 substrates by chemical vapor deposition (CVD). AFM measurements reveal that the interlayer spacing in such 2D MoSe2 flakes with screw dislocation is slightly widened with respect to the normal AA- or AB-stacked ones due to the presence of the screw dislocations. Raman and PL spectra show that the interlayer coupling is weaker and thus the band gap is wider than that in the normal AA- or AB-stacked ones. Our work demonstrates that the interlayer coupling of 2D transition metal dichalcogenides (TMDCs) flakes can be tuned by the induction of screw dislocations, which is very helpful for developing novel catalysts and electronic devices.
